CN1466770A - 批量离子注入系统中的晶片背面气体冷却装置 - Google Patents

批量离子注入系统中的晶片背面气体冷却装置 Download PDF

Info

Publication number
CN1466770A
CN1466770A CNA018163548A CN01816354A CN1466770A CN 1466770 A CN1466770 A CN 1466770A CN A018163548 A CNA018163548 A CN A018163548A CN 01816354 A CN01816354 A CN 01816354A CN 1466770 A CN1466770 A CN 1466770A
Authority
CN
China
Prior art keywords
workpiece
seal
support
holder
annular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA018163548A
Other languages
English (en)
Chinese (zh)
Inventor
Dj
D·J·齐普曼
B·C·拉戈斯
ж�
R·J·米切尔
�������ɭ
G·J·罗森
D·K·斯通
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of CN1466770A publication Critical patent/CN1466770A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNA018163548A 2000-09-26 2001-08-23 批量离子注入系统中的晶片背面气体冷却装置 Pending CN1466770A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/670,241 2000-09-26
US09/670,241 US6583428B1 (en) 2000-09-26 2000-09-26 Apparatus for the backside gas cooling of a wafer in a batch ion implantation system

Publications (1)

Publication Number Publication Date
CN1466770A true CN1466770A (zh) 2004-01-07

Family

ID=24689580

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA018163548A Pending CN1466770A (zh) 2000-09-26 2001-08-23 批量离子注入系统中的晶片背面气体冷却装置

Country Status (8)

Country Link
US (1) US6583428B1 (https=)
EP (1) EP1320866A2 (https=)
JP (1) JP2004510306A (https=)
KR (1) KR20040005822A (https=)
CN (1) CN1466770A (https=)
AU (1) AU2001282326A1 (https=)
TW (1) TW504740B (https=)
WO (1) WO2002027754A2 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101461031B (zh) * 2006-06-05 2011-03-30 奥立孔美国公司 用于光刻衬底的温度控制方法
CN101743620B (zh) * 2007-08-22 2011-07-06 瓦里安半导体设备公司 真空腔室间的密封
CN102714124A (zh) * 2009-09-29 2012-10-03 瓦里安半导体设备公司 用于低温离子植入器表面再生的光学加热器
CN103594553A (zh) * 2013-10-23 2014-02-19 中国电子科技集团公司第四十八研究所 一种阵列式硅片装载靶盘
CN107154346A (zh) * 2017-05-19 2017-09-12 京东方科技集团股份有限公司 一种膜层的掺杂方法、薄膜晶体管及其制作方法
CN109243954A (zh) * 2018-10-12 2019-01-18 苏州晋宇达实业股份有限公司 一种离子注入机
CN114830284A (zh) * 2019-12-06 2022-07-29 应用材料股份有限公司 低温热传递系统

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040012671A (ko) 2000-10-17 2004-02-11 네오포토닉스 코포레이션 반응성 증착에 의한 코팅 형성
US7064491B2 (en) * 2000-11-30 2006-06-20 Semequip, Inc. Ion implantation system and control method
US6734439B2 (en) * 2001-10-25 2004-05-11 Allan Weed Wafer pedestal tilt mechanism and cooling system
US6695270B1 (en) * 2002-08-15 2004-02-24 Ole Falk Smed Flat panel display system
JP2006179613A (ja) * 2004-12-21 2006-07-06 Rigaku Corp 半導体ウエハ縦型熱処理装置用磁性流体シールユニット
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US20080121821A1 (en) * 2006-11-27 2008-05-29 Varian Semiconductor Equipment Associates Inc. Techniques for low-temperature ion implantation
US7528392B2 (en) 2006-11-27 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for low-temperature ion implantation
US7528391B2 (en) * 2006-12-22 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing contamination during ion implantation
US8149256B2 (en) * 2008-06-04 2012-04-03 Varian Semiconductor Equipment Associates, Inc. Techniques for changing temperature of a platen
US20100084117A1 (en) * 2008-10-02 2010-04-08 Fish Roger B Platen cooling mechanism for cryogenic ion implanting
US20100155026A1 (en) * 2008-12-19 2010-06-24 Walther Steven R Condensible gas cooling system
WO2020124158A1 (en) * 2018-12-21 2020-06-25 Ozone 1 Pty Ltd Improvements in plasma reactors
US12002649B2 (en) 2021-12-10 2024-06-04 Applied Materials, Inc. Spinning disk with electrostatic clamped platens for ion implantation
CN116951003A (zh) * 2022-04-20 2023-10-27 江苏鲁汶仪器股份有限公司 一种磁流体轴

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4419584A (en) 1981-07-14 1983-12-06 Eaton Semi-Conductor Implantation Corporation Treating workpiece with beams
JPS5950275A (ja) 1982-09-16 1984-03-23 Rigaku Keisoku Kk 磁性流体軸封装置
US5389793A (en) 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4567938A (en) * 1984-05-02 1986-02-04 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
US4733091A (en) * 1984-09-19 1988-03-22 Applied Materials, Inc. Systems and methods for ion implantation of semiconductor wafers
JPS61264649A (ja) * 1985-05-20 1986-11-22 Ulvac Corp 基板冷却装置
US4899059A (en) 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US4965862A (en) 1988-05-18 1990-10-23 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5641969A (en) * 1996-03-28 1997-06-24 Applied Materials, Inc. Ion implantation apparatus
US5954342A (en) 1997-04-25 1999-09-21 Mfs Technology Ltd Magnetic fluid seal apparatus for a rotary shaft
US6222196B1 (en) * 1998-11-19 2001-04-24 Axcelis Technologies, Inc. Rotatable workpiece support including cyclindrical workpiece support surfaces for an ion beam implanter
US6412289B1 (en) 2001-05-15 2002-07-02 General Electric Company Synchronous machine having cryogenic gas transfer coupling to rotor with super-conducting coils

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101461031B (zh) * 2006-06-05 2011-03-30 奥立孔美国公司 用于光刻衬底的温度控制方法
CN101743620B (zh) * 2007-08-22 2011-07-06 瓦里安半导体设备公司 真空腔室间的密封
CN102714124A (zh) * 2009-09-29 2012-10-03 瓦里安半导体设备公司 用于低温离子植入器表面再生的光学加热器
CN103594553A (zh) * 2013-10-23 2014-02-19 中国电子科技集团公司第四十八研究所 一种阵列式硅片装载靶盘
CN103594553B (zh) * 2013-10-23 2015-10-28 中国电子科技集团公司第四十八研究所 一种阵列式硅片装载靶盘
CN107154346A (zh) * 2017-05-19 2017-09-12 京东方科技集团股份有限公司 一种膜层的掺杂方法、薄膜晶体管及其制作方法
CN109243954A (zh) * 2018-10-12 2019-01-18 苏州晋宇达实业股份有限公司 一种离子注入机
CN109243954B (zh) * 2018-10-12 2023-11-03 江苏晋誉达半导体股份有限公司 一种离子注入机
CN114830284A (zh) * 2019-12-06 2022-07-29 应用材料股份有限公司 低温热传递系统
CN114830284B (zh) * 2019-12-06 2024-12-24 应用材料股份有限公司 低温热传递系统及离子植入系统

Also Published As

Publication number Publication date
TW504740B (en) 2002-10-01
AU2001282326A1 (en) 2002-04-08
KR20040005822A (ko) 2004-01-16
US6583428B1 (en) 2003-06-24
JP2004510306A (ja) 2004-04-02
EP1320866A2 (en) 2003-06-25
WO2002027754A2 (en) 2002-04-04
WO2002027754A3 (en) 2002-06-13

Similar Documents

Publication Publication Date Title
CN1466770A (zh) 批量离子注入系统中的晶片背面气体冷却装置
US6593699B2 (en) Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient
CN100343942C (zh) 可移动元件的多向扫描和其离子束监测设备
CN1121057C (zh) 真空处理室的通用壳体
US6580082B1 (en) System and method for delivering cooling gas from atmospheric pressure to a high vacuum through a rotating seal in a batch ion implanter
KR20000052363A (ko) 이온빔 주입기용의 원통형 작업재 지지면을 가지는회전가능한 작업재 지지대
JPS6255854A (ja) 半導体ウエハ−用イオン注入装置
EP0020873B1 (en) Target disc for ion implantation into semiconductors and method for cooling such a disc
US6734439B2 (en) Wafer pedestal tilt mechanism and cooling system
US6867422B1 (en) Apparatus for ion implantation
KR20230121554A (ko) Pvd 프로세스를 위해 아킹를 제거하고 균일한 가스 분포를 향상시키기 위한 가스 주입 프로세스 키트
CN108977779B (zh) 溅射装置
TWI904110B (zh) 透鏡、離子植入系統及方法
JP2012532416A (ja) イオン注入装置および方法
US20030070316A1 (en) Wafer pedestal tilt mechanism and cooling system
US7276712B2 (en) Method and apparatus for scanning a workpiece in a vacuum chamber of an ion beam implanter
CN118919392A (zh) 多重磁场刻蚀装置
TW202338888A (zh) 用於處理多個工件的旋轉碟及包括其的離子植入系統
Tamai et al. Mechanically scanned ion implanters with two-axis disk tilt capability

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication