CN1465107A - Method for producing high-temperature superconductors - Google Patents
Method for producing high-temperature superconductors Download PDFInfo
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- CN1465107A CN1465107A CN02802657A CN02802657A CN1465107A CN 1465107 A CN1465107 A CN 1465107A CN 02802657 A CN02802657 A CN 02802657A CN 02802657 A CN02802657 A CN 02802657A CN 1465107 A CN1465107 A CN 1465107A
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- 239000002887 superconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 3
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 3
- 239000002243 precursor Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 12
- 230000004927 fusion Effects 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- RGUOAJCERXRZDG-UHFFFAOYSA-N ytterbium Chemical compound [Yb].[Yb] RGUOAJCERXRZDG-UHFFFAOYSA-N 0.000 claims 2
- JLCXRPSKXNFCOX-UHFFFAOYSA-N neodymium Chemical compound [Nd].[Nd] JLCXRPSKXNFCOX-UHFFFAOYSA-N 0.000 claims 1
- 238000004886 process control Methods 0.000 claims 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 11
- 229910052779 Neodymium Inorganic materials 0.000 description 8
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to a method for producing high temperature superconductors having at least one transformed metal oxide superconducting layer made of an initial material, comprising the following steps: the initial material for the superconducting layer is disposed on a strip-like base, especially a metal strip, and the initial material is transformed into a superconducting layer by controlled heat treatment steps comprising melting and cooling. The invention more specifically relates to the production of coated high-temperature conductors. Foreign elements are introduced in various concentrations, enabling an uneven melt point to be maintained over the cross-section of the strip, enabling specific crystal growth to be triggered, assisted, promoted, maintained and/or controlled during the heat treatment steps, especially during cooling. As opposed to methods known per se, specific crystal growth is initiated, maintained, promoted and controlled for the formation of a mono-crystalline or polycrystalline arrangement in the superconducting layer by means of inward transfer, diffusion or mixing with foreign elements of various concentrations and, consequently, a solid-liquid interface is formed along the cross-section of said strip.
Description
Technical field
The present invention relates to a kind of method of making high-temperature superconductor, this high-temperature superconductor has at least one superconducting metal oxide layer that is transformed into by a kind of precursor material, the step of this method comprises to tape substrates (concrete is metal tape) and applies a kind of precursor material that is used for superconducting layer, and changes this precursor material into superconducting layer by controlled heat treatment step (comprising fusion and cooling).The present invention be more particularly directed to the manufacturing of coated with high temperature superconductor (coated conductor).
Background technology
At present, can transport high electric current and have and be higher than 77 ° of K transition temperature T of (preferably being higher than 90 ° of K)
cThe manufacturing of high-temperature superconductor in underlying issue be that (preferably infinite) that obtain to extend under the cost of economy has greater than the big bed thickness of 1 μ m and be close to and be the superconductor of mono-crystalline structures.The current transfer ability of this superconductor considerably depends on the crystal arrangement in the layer, particularly, depends on crystal boundary angle (grain boundary angle).Before this, the crystal growth of arranging with the monocrystalline that obtains as much as possible in semiconductor layer is in the manufacture method of prior art of purpose, for example, in the RABiTS method, precursor material be applied in one by the distortion and again crystallization (for example make its metal substrate with cross-compound arrangement, one has the nickel strap of cross-compound arrangement), make its cross-compound arrangement be converted to the crystal arrangement of superconducting layer, and the structure of this substrate of epitaxial crystal growth adaptation in the superconducting layer ° does not have the superconductor of the end in order to make wire, and superconducting phase must carry out on the length of whole conductor in heat treatment step continuously to substituting of aufwuchsplate (growth front).This substrate that just requires to have desired structure has tangible cross-compound arrangement on its whole length.Therefore, this technology is very high to the requirement of structurized substrate.Utilize high-quality structurized substrate or use in addition metal tape complicated significantly the manufacturing of high-temperature superconductor, and it is expensive more.
Summary of the invention
The objective of the invention is to obtain the manufacturing process of high-temperature superconductor, this technology realizes technically easily, thereby and makes that making high-temperature superconductor that extend or that do not have the end, that have high layer thickness and have a high critical current density becomes possibility.
This target realizes by the method that provides in claim 1.According to the invention provides, rely under the different concentration and introduce heterogeneous element, precursor material is obtained fusion point heterogeneous on the cross section of this band, thereby, the directional crystal growth of superconductor layer is caused, supports, promotes, keeps and/or be controlled in heat treatment step, particularly cooling period.Compare with the known method of prior art, needn't no matter be the structuring of substrate or the aligning method of other technical very difficult realization forms monocrystalline or polycrystalline is arranged for precursor material adopts, the directional crystal growth is initiated, keeps, promotes and control in transfer, diffusion or mixing by the interior of the heterogeneous element under concentration different on the cross section of band, thereby and produces crystallization (solidification) face on the cross section of band.In this technology, can control heat treatment step and this type of the directional crystal growth that on the cross section of band, has more low-melting edge respectively by edge orientation effectively with higher melt.Because substrate itself need not any pre-treatment step, and to compare by the distortion of costliness and the nickel strap of recrystallization textureization, its thickness can be made into thinner basically, thus cost can further be simplified and save to manufacturing process.Yet, structure or metal tape or washing band etc. also can be used as substrate and use.
In the preferred embodiment of this method, the heterogeneous element of employing has different fusing points, and wherein the fusing point of two kinds of heterogeneous elements can all be higher than the fusing point of pure precursor material, perhaps wherein a kind of being higher than and the another kind of fusing point that is lower than pure precursor material.Herein, correctly using two kinds of heterogeneous elements is very advantageously, and wherein this first kind of precursor material is introduced in the belt-like zone on the side of this band, and another kind of heterogeneous element is introduced in the belt-like zone on the relative side of this band.In order to obtain the fusing point gradient that is constant on the cross section of band, concentration can descend in the middle of this band in the zone of the heterogeneous element of introducing respectively.(exclusively) zone with precursor material can be retained between the zone of handling with heterogeneous element exclusively.Heterogeneous element is chosen as and makes it influence fusing point under the condition that does not hinder the superconducting phase crystal growth.To make crystallization (solidification) face, the conversion stage of manufacturing process can carry out according to various methods by the fusing point fusion that changes on the cross section that relies on concentration gradient and band and/or cooling.Thereby this heterogeneous element can be applied in, spreads, prints or disperse on the precursor material that is applied in advance on the substrate, or heterogeneous element can at first be applied at the bottom of the belt material.Particularly, at first be precursor material, be heterogeneous element then, in preparation process successively, be applied to substrate, or to having applied the precursor material layer.Wish that especially precursor material and/or heterogeneous element apply by typography, particularly utilize silk screen printing, utilize to rotate to print and roll, utilize nozzle printing or dropwise heat or magnetic field impulse printing etc., because the use of typography can be transformed in superconductor under very little equipment cost in production line.
The another kind of technique for applying that is used for precursor material is, adopt a kind of solvent, this precursor material is formed liquid state or pulpous state, be applied to substrate again, perhaps this substrate is pulled through the spray of liquid or pulpous state precursor material, and the solvent that is included in the precursor material is volatilized, such as isopropyl acetone, or can in pining for a treatment step, evaporate water for example.In extra processing step, carrying out heat treatment step at the superconduction band to corresponding preparation is at critical transition temperature T precursor material is changed or calcine
cBecome down before the layer of superconductor, heterogeneous element can be applied to required concentration gradient in the narrow zone of precursor material layer.
Substrate preferably includes the metal tape of the alloy of silver, gold, nickel, iron or these elements, and its go forward material and heterogeneous element are used as layer and apply.Can be used for all monocrystalline and polycrystalline superconducting phase or superconducting layer extensively according to technology of the present invention.The preferable range of using relates to superconducting layer and comprises YBa
2Cu
3O
xSuperconductor.For this type I superconductors I, preferably in the YBCO precursor material, form the melt temperature gradient as heterogeneous element with neodymium and ytterbium or silver and ytterbium.Yet, can use other heterogeneous element, because in others, rare earth metal and noble metal do not influence YBa
2Cu
3O
xThe superconducting characteristic of high-temperature superconductor, preferably, heterogeneous element is selected from lanthanide series, rare earth metal, metal, noble metal or their mixing or compound.
With forerunner's coated materials substrate with apply heterogeneous element and preferably on substrate, carry out with band shape.Yet the superconductor by this production technology makes when manufacturing process finishes, can have various geometries, and can be the circle line particularly, and wherein the superconduction band is by mechanically or be deformed into behind heat treatment step and have circular cross section.In addition, the step of this technology, particularly, duration in the heat treatment step and temperature gradient are selected as making that the directional crystal growth in the superconducting layer of high-temperature superconductor is controlled.
Description of drawings
The present invention describes in detail with reference to the preferred embodiment that schematically illustrates in the accompanying drawings.Wherein:
Fig. 1 schematically illustrates and is applied to the plane graph nickel metal tape and YBCO precursor material that apply at the edge with heterogeneous element ytterbium and neodymium; And
Fig. 2 is schematically illustrated in the fusion gradient and the concentration gradient of the heterogeneous element that shows on the cross section of band in several figure.
Embodiment
In Fig. 1, schematically show metal tape, for example not structurized nickel strap coated with the YBCO precursor material.As heterogeneous element, ytterbium is applied to the right hand edge of strip region, and neodymium is applied to its offside, the left hand edge in the strip region that promptly separates.This metal tape that is used to make can comprise noble metal except that nickel, as gold or silver-colored, or the metal level of gas deposition on textile or plastic tape is to be supported in the crystal growth in the YBCO precursor material during the converting process.In a preferred embodiment, YBaCuO precursor material (YBCO) in the viscous state deposit to metal tape, for example, by sol-gel (sol-gel) technology.After evaporating solvent from the precursor material of this viscous, utilize stream of pulses technology, at first, for example on right hand belt edge, printing has lower by about 1 as heterogeneous element, the ytterbium of 097 ℃ fusing point, the left hand edge at the bottom of belt material prints the neodymium band that has higher melt as heterogeneous element then.Herein, pure YBCO precursor material has about 1050 ℃ fusing point.
Correspondingly the characteristic properties before the heat treatment on Zhi Bei the superconductor band is shown among Fig. 2, the two following width of cloth illustrate neodymium and the concentration gradient of ytterbium in each bandwidth that is applied to precursor material, the concentration of this heterogeneous element is reduced in the middle of band by the edge respectively, makes that the influence of this heterogeneous element is the most obvious in the effect at the edge of superconduction band preparation and that do not change as yet.Correspondingly, at the central area of this superconduction band that does not change as yet, these the two kinds heterogeneous element effects that apply, or effect is very light.Uppermost illustrating is idealized as straight line, the melt temperature gradient T that shows on the cross section Q of band
s, it descends from left to right, and ytterbium has lower fusing point because neodymium has high melt point.On the whole, obtained to be the melt temperature gradient T that constant descends
s, in the practical application, its process is with the Utopian straight line in the slip chart 2.Rely on and form melt temperature gradient T in the precursor material
s, when this precursor material changes by heating and cooling, can cause and be controlled at the YBa in the superconducting layer
2Cu
2O
xThe directional crystal growth of crystal, and have more low-melting edge from edge orientation respectively with higher fusion point.This YBCO precursor material has big relatively temperature window, wherein can carry out crystal growth, so the directional crystal growth can obtain under the situation that is higher or lower than 100 ℃ of melt temperatures.The process that is used for the technology of superconducting phase transformation is chosen as the of short duration fusion of carrying out precursor material under the temperature of the fusing point that just is higher than pure precursor material, continue with direct cooling, with cause crystal plane from band side with higher melt to having the transmission of more low-melting band side.Thereby on the conductor belt direction, per hour carry out the crystal growth of 1mm.
With reference to description of drawings have the preferred embodiment of heterogeneous element ytterbium and neodymium, wherein the melt temperature of ytterbium and neodymium all is higher than the fusing point of YBCO precursor material.Yet, also can be lower than according to manufacturing process of the present invention under the situation of precursor material and carry out in one of them melt temperature of heterogeneous element.In another preferred embodiment, has the side that the about 961 ℃ silver of melt temperature is applied in this conductor belt.Then, correspondingly Zhi Bei superconduction band is heated to 1060 ℃, promptly a little less than the fusing point of ytterbium, and then is cooled to and is lower than 1000 ℃.Crystal plane in the process of this technology forms by a side of the ytterbium side towards silver.
Generally, by technology according to the present invention, utilize directional crystal growth can form greater than 10 μ m and particularly greater than the bed thickness of 35 μ m.This layer can be made into monocrystalline or polycrystalline, and this polycrystal layer comprises preferably big, directed crystal, particularly monocrystalline.The metal tape substrate that is fit to need not pre-structuring.Yet, utilizing pre-structurized metal tape, the superconducting characteristic of the superconductor that makes can further improve.
Claims (14)
1. method of making high-temperature superconductor, this high-temperature superconductor has at least one by the superconducting metal oxide layer that a kind of precursor material is transformed into, and the step of this method comprises:
To tape substrates, particularly metal tape applies the precursor material that is used for superconducting layer; And
Comprise by control and the heat treatment step of fusion and cooling to change this precursor material into superconducting layer,
It is characterized in that, by introducing the heterogeneous element of variable concentrations, the fusing point that this precursor material obtains is not to be uniformly on the cross section of band, thereby makes in heat treatment step, particularly during cooling, in this superconducting layer, introduce, support and/or control a kind of directional crystal growth.
2. according to the method for claim 1, it is characterized in that, this heterogeneous element that uses has different fusing points, wherein the fusing point of two kinds of heterogeneous elements can preferably all be higher than the fusing point of pure precursor material, or compare with this precursor material, a kind of fusing point wherein can be higher, and alternative fusing point can be lower.
3. according to each method in claim 1 or 2, it is characterized in that only two kinds of heterogeneous elements are used, this first heterogeneous element is introduced in the strip region of a band side edge, and another kind of heterogeneous element is introduced in the strip region of relative band side edge.
4. according to the method for claim 3, it is characterized in that the concentration in the zone of the heterogeneous element of introducing reduces in the middle of band, on the cross section of band, to obtain to be the fusing point gradient of constant.
5. according to one method in the claim 1 to 4, it is characterized in that this heterogeneous element applies, spreads, prints or disperse on this precursor material that is applied in advance on this substrate, or at first be applied to this substrate.
6. according to one method in the claim 1 to 5, it is characterized in that this precursor material and this heterogeneous element are applied to substrate in preparation process successively, or are applied to the layer that had applied.
7. according to one method in the claim 1 to 6, it is characterized in that, this precursor material and/or this heterogeneous element apply by typography, in particular by silk screen printing, rotate that printing is rolled, nozzle printing, heat dropwise or magnetic field impulse printing or similar mode.
8. according to one method in the claim 1 to 7, it is characterized in that, this precursor material of utilizing a kind of solvent to form liquid or pulpous state is applied to this substrate, or this substrate was dragged the bath of the precursor material of liquid or pulpous state, the solvent that is included in this precursor material is volatile, isopropyl acetone for example, or in the intermediate heat-treatment step, evaporate, for example water.
9. according to one method in the claim 1 to 8, it is characterized in that this substrate comprises the metal tape of the alloy of silver, gold, nickel, iron or these elements.
10. according to one method in the claim 1 to 9, it is characterized in that this superconducting layer comprises YBa
2Cu
3O
xCrystal.
11. the method according to claim 10 is characterized in that, the melt temperature gradient in this YBCO precursor material is made as heterogeneous element with neodymium (neodymium) and ytterbium (ytterbium) or silver and ytterbium.
12. one method according in the claim 1 to 11 is characterized in that, this heterogeneous element is chosen from the group that is made of lanthanide series, rare earth metal, metal, noble metal or their mixing or compound.
13. one method according in the claim 1 to 12 is characterized in that, this superconduction band is mechanically formed and is circular cross-section.
14. one method according in the claim 1 to 13 is characterized in that, the directional crystal growth in the superconducting layer of this high-temperature superconductor is by the process control of this technology, particularly by duration in the heat treatment step and temperature gradient control.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10128320A DE10128320C1 (en) | 2001-06-12 | 2001-06-12 | High temperature superconductor manufacturing method has material converted into superconductive layer applied to metal band and doped to provide non-uniform melting points |
| DE10128320.2 | 2001-06-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1465107A true CN1465107A (en) | 2003-12-31 |
| CN100376044C CN100376044C (en) | 2008-03-19 |
Family
ID=7687933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028026578A Expired - Fee Related CN100376044C (en) | 2001-06-12 | 2002-06-03 | Method for producing high-temperature superconductors |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100863334B1 (en) |
| CN (1) | CN100376044C (en) |
| DE (1) | DE10128320C1 (en) |
| WO (1) | WO2002101844A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107978394A (en) * | 2016-10-25 | 2018-05-01 | 上海新昇半导体科技有限公司 | Superconductive tape and its manufacture method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100741726B1 (en) * | 2006-02-16 | 2007-08-10 | 한국기계연구원 | Apparatus and method of manufacturing super conducting tapes using wet chemical process |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1340569C (en) * | 1987-05-05 | 1999-06-01 | Sungho Jin | Superconductive body having improved properties, and apparatus and systems comprising such a body |
| US4994435A (en) * | 1987-10-16 | 1991-02-19 | The Furukawa Electric Co., Ltd. | Laminated layers of a substrate, noble metal, and interlayer underneath an oxide superconductor |
| JP2707499B2 (en) * | 1987-11-26 | 1998-01-28 | 住友電気工業株式会社 | Manufacturing method of oxide superconductor |
| US5308799A (en) * | 1990-06-07 | 1994-05-03 | Nippon Steel Corporation | Oxide superconductor and process for preparation thereof |
| CA2092594A1 (en) * | 1992-03-31 | 1993-10-01 | Makoto Tani | Rare earth superconducting composition and process for production thereof |
| US5872081A (en) * | 1995-04-07 | 1999-02-16 | General Atomics | Compositions for melt processing high temperature superconductor |
| TW504849B (en) * | 1997-02-25 | 2002-10-01 | Matsushita Electric Ind Co Ltd | Optical receiver |
| DE69815422T2 (en) * | 1997-03-21 | 2003-12-24 | Haldor Topsoe A/S, Lyngby | A method of manufacturing a rare earth-barium cuprate type superconductor |
-
2001
- 2001-06-12 DE DE10128320A patent/DE10128320C1/en not_active Expired - Fee Related
-
2002
- 2002-06-03 WO PCT/EP2002/006053 patent/WO2002101844A2/en not_active Application Discontinuation
- 2002-06-03 KR KR1020037002027A patent/KR100863334B1/en not_active IP Right Cessation
- 2002-06-03 CN CNB028026578A patent/CN100376044C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107978394A (en) * | 2016-10-25 | 2018-05-01 | 上海新昇半导体科技有限公司 | Superconductive tape and its manufacture method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002101844A2 (en) | 2002-12-19 |
| CN100376044C (en) | 2008-03-19 |
| KR100863334B1 (en) | 2008-10-15 |
| DE10128320C1 (en) | 2002-07-25 |
| KR20030034137A (en) | 2003-05-01 |
| WO2002101844A3 (en) | 2003-07-17 |
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