CN1465038A - Tie ring type display device, and method of manufacturing the display device - Google Patents
Tie ring type display device, and method of manufacturing the display device Download PDFInfo
- Publication number
- CN1465038A CN1465038A CN 02802380 CN02802380A CN1465038A CN 1465038 A CN1465038 A CN 1465038A CN 02802380 CN02802380 CN 02802380 CN 02802380 A CN02802380 A CN 02802380A CN 1465038 A CN1465038 A CN 1465038A
- Authority
- CN
- China
- Prior art keywords
- display board
- organic
- layer
- display
- rib
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
A tiled display device with high quality, and method of manufacturing the display device, the device has inconspicuous boundary, using organic EL display board, having contrast improved by black matrix, the method includes: coating UV cured resin (62) on main surface of the tiled display board (60); sticking sealing substrate (66) carefully on the resin coating surface to unable blend gas bubble in gap between the UV cured resin (62) and sealing substrate (66); adjusting position of the tiled display board (60) relative to sticking sealing substrate (66), the black matrix is on auxiliary conductor (23) of the rib projection (22), and on boundary (68) between the display board (50) and (56); curing the resin radiating UV cured resin (62) by UV beam; and fixing position of the tiled display board (60) relative to sticking sealing substrate (66), thereby the tiled display device (70) is produced.
Description
Technical field
The present invention relates to a kind of tiling type display system, and relate to the method for making this tiling type display system with a plurality of display boards or display unit.The invention particularly relates to a kind of tiling type display system, and relate to the method for making this tiling type display system with the organic EL of top emission type (electroluminescence) display board.
Background technology
People's expection comprises that the display system of organic El device will be used as flat-panel monitor of future generation and commercialization.In organic EL display system,, can carry out task driven by passive matrix addressing because the speed of response of organic El device is 1 μ m/s or littler.But, in dutycycle during at the opening and closing display under the higher situation, because, must in short time cycle, apply very big electric current, so passive matrix addressing produces severe impairment to organic El device to organic El device in order to obtain enough brightness.On the other hand, in active array addressing, TFT (thin film transistor (TFT)) circuit is typically connected to capacitor to keep the voltage that organic El device is applied.Therefore, active array addressing can not produce bigger infringement to organic El device, because can apply constant voltage to organic El device in a display frame, that is, in the short time cycle organic El device is not applied very high electric current.
But in the display board that is driven by the active array addressing that uses TFT, TFT occupies certain area, and can not obtain the useful area of pixel parts fully, thereby has reduced the aperture ratio.Top emission type device is effective aspect addressing this problem.
In Figure 10 A-10D, Figure 10 A represents traditional organic El device plate, and Figure 10 B represents top emission type organic El device plate.In Figure 10 A, electrode wires 904 is arranged on the substrate 902, and interlayer insulating film 906 is therebetween, and the TFT900 that is matrix distribution is arranged on the substrate 902, and electrode wires 904 is connected to TFT900.The anode electrode 910 that on electrode wires 904, sets gradually planarization insulating layer 908 and form by semi-transparent conductive material.Anode electrode 910 is connected to corresponding electrode line 904.
In Figure 10 B of expression top emission type organic El device plate, organic EL layer 914 and be successively set on the anode electrode of forming by metal 920 by the cathode electrode 926 that semi-transparent conductive material is formed.Opposite among Figure 10 B among the layout of above-mentioned parts and Figure 10 A.Protective seam 930 and translucent 932 are successively set on rib 912 and the cathode electrode 926.Because anode electrode 920 is reflexive and cathode electrode 926 is translucent, so launch in the direction shown in the arrow Ff from the light of organic EL layer 914 outputs.In the traditional type shown in Figure 10 A, TFT900 is positioned at the light emitting side.But in the top emission type shown in Figure 10 B, TFT900 is not positioned at the light emitting side, has increased the aperture ratio thus.
In having the top emission type OLED panel of large aperture ratio, cathode electrode 926 is translucent, and promptly cathode electrode 926 is translucent conducting films because the emission only from cathode electrode 926, be that top electrode sends.Generally, because semitransparent electrode has big sheet resistance, so when on the first type surface at display board semitransparent electrode being set, can produce voltage gradient on the display surface.Therefore, because the decline of display surface center voltage, brightness reduces.This phenomenon becomes even more serious when display surface becomes big, has seriously reduced display performance thus.In order to address this is that, the following array structure shown in Figure 10 C has been proposed: the auxiliary traverse 950 be made up of metal is set and it is attached to cathode electrode 926 on rib 912.In having the display board of this structure, can not produce because the non-homogeneous demonstration due to the voltage gradient.
But in having the display board of this lead, because exterior light is reflected very strongly by auxiliary traverse 950, the contrast of displayed image seriously decays.In order to address this problem, the following array structure shown in Figure 10 D has been proposed: a black matrix 960 is set, on auxiliary traverse 950 in case contrast reduces.The sealing substrate 962 that utilizes UV cured resin 964 will have black matrix 960 is arranged on the structural top shown in Figure 10 C, forms the structure shown in Figure 10 D, and the UV cured resin is between substrate 962 and this structural top.Because black matrix 960 covers auxiliary traverses 950, so outside reflection of light is suppressed, and contrast becomes big.
Known tiling technology is a kind of method that increases display size.In this technology, a plurality of flat display panels unit is arranged in one way, so that their tilings form a large screen display.In the large screen display that forms by the tiling technology, need make the border between adjacent display panels unshowy.
The present invention is based on the above-mentioned fact.One object of the present invention is to provide a kind of tiling type display system and manufacture method thereof that comprises OLED panel, this display system has the contrast of raising by utilizing black matrix, and wherein tiling type display system provides high-quality demonstration and inconspicuous border is arranged.
Summary of the invention
To achieve these goals, the invention provides a kind of tiling type display system, this system has the large screen display that connects together and form by with a plurality of display boards.Tiling type display system comprises that one is arranged on sealing substrate on a plurality of display boards and one and is arranged on the suprabasil black matrix that is used to improve contrast of sealing, and wherein black matrix is on the border between a plurality of display boards.
In a main embodiment, each display board all has substrate, bottom electrode, organic EL layer and the top semitransparent electrode that sets gradually; And send from the top semitransparent electrode from the light that organic EL layer sends.In another embodiment, display board has one to be used to prevent bottom electrode, organic EL layer and the impaired sealant of top semitransparent electrode.In another embodiment, display board has the rib that surrounds each organic EL layer, and each rib has an auxiliary traverse that is electrically connected to the top semitransparent electrode, and black matrix is positioned on the auxiliary traverse.In another embodiment, being positioned at that the auxiliary traverse of boundary between display board has approximately is half width of other auxiliary traverse width.
The present invention also provides a kind of method of making tiling type display system, wherein this method comprises that cutting has the step of each display board of rib, and carry out in the outside of this cutting rib that is used for end face that display board is bonded together of display board in close all end faces of display board.In a main embodiment, utilize laser to cut each display board along the outside of rib.In another embodiment, display board has organic EL layer, and uses each display board of cut before forming organic EL layer.By below with reference to the described embodiment of accompanying drawing, above and other objects of the present invention, that feature and advantage will become will be more clear.
Description of drawings
Figure 1A to 1C is the main diagrammatic sketch of expression according to the manufacture method of first embodiment of the invention;
Fig. 2 A to 2C is the main diagrammatic sketch of expression according to the manufacture method of first embodiment of the invention;
Fig. 3 is the amplification perspective schematic view of the part of Fig. 2 A to 2C;
Fig. 4 A to 4C is the main diagrammatic sketch of expression according to the manufacture method of first embodiment of the invention;
Fig. 5 A to 5B is the main diagrammatic sketch of expression according to the manufacture method of first embodiment of the invention;
Fig. 6 A to 6C is the main diagrammatic sketch of expression according to the manufacture method of first embodiment of the invention;
Fig. 7 is the perspective schematic view that the expression tiling will be deceived the situation of arranged in matrix on display board afterwards;
Fig. 8 A to 8B is the main diagrammatic sketch of expression according to the manufacture method of second embodiment of the invention;
Fig. 9 A to 9D is the main diagrammatic sketch of expression according to the manufacture method of second embodiment of the invention;
Figure 10 A to 10D is the main sectional view of the display board of expression background technology of the present invention.
Embodiment
[first embodiment]
To describe the first embodiment of the present invention in detail below.Main manufacturing step is at first described.The tiling type display system of present embodiment is a kind of active array addressing type.At first prepare the TFT substrate 10 shown in Fig. 1 (A).TFT substrate 10 has the TFT12 that is arranged to the matrix corresponding with pixel.Existing polytype TFT substrate and manufacture method thereof, and can adopt any.The gate electrode of each TFT12 is attached to the sweep circuit (not shown).
On the upper surface of TFT substrate 10, form one first interlayer insulating film 14 to cover TFT12.First interlayer insulating film 14 comprises for example silica based materials, as monox or comprise monox and the PSG of phosphorus (phosphorosilicate glass).On first interlayer insulating film 14, form lead 16A and the 16B that forms by aluminium or Al-zn-mg-cu alloy by composition.Lead 16A and 16B are as drive signal line and pass through source electrode or the drain electrode that the contact hole (not shown) that is arranged in first interlayer insulating film 14 is attached to TFT12.
Next, shown in Fig. 1 (B), form second interlayer insulating film 18 to cover lead 16A and 16B.Second interlayer insulating film 18 preferably includes lead 16A and the 16B of a kind of material that can be easy to be flattened with overlay patternization.This material preferably has little water absorptivity, because the organic layer that forms by deposition in the subsequent step can be bad by damage by water, and therefore can not obtain high brightness.In this embodiment, second interlayer insulating film 18 comprises polyimide.Second interlayer insulating film 18 is formed on the upper surface of TFT substrate 10, and is formed for being attached to the contact hole 18A of lead 16A again in second interlayer insulating film 18.
Shown in Fig. 1 (C), on second interlayer insulating film 18, form the anode electrode (bottom electrode) 20 of organic EL layer.In the emission type display board of the top of present embodiment, anode electrode 20 preferably includes the conductive material with big work function and high reflectance, as chromium, iron, cobalt, nickel, copper, tantalum, tungsten, platinum or gold.In the present embodiment, anode electrode 20 comprises chromium.Each anode electrode 20 is carried out composition, thus corresponding with each pixel, and the corresponding contact hole 18A in being arranged on second interlayer insulating film 18 is attached to every lead 16A.
Shown in Fig. 2 (A), form rib 22 to center on pixel (organic EL layer).Rib 22 has a height, and this is highly fully greater than the thickness that deposits the organic EL layer that forms by subsequent step.Therefore, when forming organic EL layer by patterning on anode electrode 20, rib 22 plays a part the mask dividing wall.In this embodiment, each rib 22 comprises monox sublayer 22A and 22B, and an aluminium lamination as auxiliary traverse 23 is arranged on the 22B of monox sublayer.Monox sublayer 22A forms and makes contact hole 18A be filled by monox sublayer 22A, and monox sublayer 22A cover contact hole 18A around.On the 22A of the monox sublayer of correspondence, form each monox sublayer 22B then.In this structure, rib 22 has enough height.Monox sublayer 22A is as interlayer insulating film, and monox sublayer 22B is as rib.
Fig. 2 (B) is the explanatory view that expression has the display board 50 of the rib 22 that as above forms.Shown in Fig. 2 (C), when display board 50-56 joins to together and forms tiling type display system, must be along the TFT substrate 10 of cutting display board 50 near the part of end face 50A in all end faces of display board 50 and 50B, end face 50A and 50B join on the corresponding end face of other display board.In this embodiment, shown in Fig. 2 (B), utilize laser to cut outside (or end of auxiliary traverse 23) the cutting TFT substrate 10 of device, shown in the arrow among Fig. 2 (B) along rib 22.Laser cuts device can carry out high-precision cutting, and does not need water as cooling medium.Therefore, this laser cut that device is suitable for can be by the bad organic El device of damage by water.
This laser cuts device and preferably adopts the high power infrared laser, as carbon dioxide laser.The predetermined portions that is applied to the display board substrate from the laser beam of laser instrument output is with this part of spot heating promptly, and again by applying the incomplete quench of air to heating, makes the stress cutting that substrate is produced by aforesaid operations thus.Fig. 3 represents the angle be made up of end face 50A and 50B in the mode of amplifying.Must before forming organic EL layer, finish cut, the temperature of display board 50 because cut temporarily raises, and following organic EL layer is responsive to heat, promptly is subject to fire damage.
In the display board 50 that comprises electrode and organic EL layer,, do not need to cut TFT substrate 10 when the end face of end face 50A and 50B and TFT substrate 10 at grade the time.In addition, can prepare other substrate that is used to tile, be connected to together to arrange display board 50-56 thereon.
As shown in Figure 4, form the organic EL layer that shows red (R), green (G) and blue (B) by vapour deposition.In this embodiment, formation shows green organic El layer, shows another blue organic EL layer and another red organic EL layer of demonstration successively.Shown in Fig. 4 (A), preparation is used to form the metal mask with opening 24A 24 of R, G and B pixel.Aim at, make opening 24A be positioned on the anode electrode of green pixel.Utilize resistance heated, on green anode electrode 20, form green organic EL layer 26G by vapour deposition.
(1) " three (3-tolyl phenylamino) triphenylamine (m-MTDATA) is to form hole injection layer 26Ga to deposit 4,4 of 25nm ', 4.
(2) 4,4 of deposition 30nm '-(α-NPD) is to form hole transport layer 26Gb for two (N-1-naphthyl-N-phenylamino) biphenyl.
(3) three (oxine (quinolinolato)) aluminium (III) of deposition 50nm is (Alq3) to form luminescent layer 26Gc.In a precipitation equipment, carry out the above-mentioned deposition of each layer continuously.
Shown in Fig. 4 (B), aim at, make opening 24A be positioned on the anode electrode of blue picture element.Utilize resistance heated, on blue anode electrode 20, form blue organic EL layer 26B by vapour deposition.
(1) " three (3-tolyl phenylamino) triphenylamine (m-MTDATA) is to form hole injection layer 26Ba to deposit 4,4 of 18nm ', 4.
(2) 4,4 of deposition 30nm '-(α-NPD) is to form hole transport layer 26Bb for two (N-1-naphthyl-N-phenylamino) biphenyl.
(3) 2 of deposition 14nm, 9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine) is to form the luminescent layer 26Bc as hole blocking layer.
(4) three (oxine) aluminium (III) of deposition 30nm is (Alq3) to form luminescent layer 26Bd.In a precipitation equipment, carry out the above-mentioned deposition of each layer continuously.
Shown in Fig. 4 (C), aim at, make opening 24A be positioned on the anode electrode of red pixel.Utilize resistance heated, on red anode electrode 20R, form red organic EL layer 26R by vapour deposition.
(1) " three (3-tolyl phenylamino) triphenylamine (m-MTDATA) is to form hole injection layer 26Ra to deposit 4,4 of 55nm ', 4.
(2) 4,4 of deposition 30nm '-(α-NPD) is to form hole transport layer 26Rb for two (N-1-naphthyl-N-phenylamino) biphenyl.
(3) 2 of deposition 14nm, two [4-(N-anisyl-N-phenylamino) styryl] benzene-1 of 5-, 4-dintrile (BSB-BCN) is to form luminescent layer 26Rc.
(4) three (oxine) aluminium (III) of deposition 30nm is (Alq3) to form electron transport layer 26Rd.In a precipitation equipment, carry out the above-mentioned deposition of each layer continuously.
Shown in Fig. 5 (A), form above-mentioned organic EL layer 26 and form cathode electrode (top electrode) 28 afterwards.Cathode electrode 28 is as the public electrode of each pixel.In above-mentioned precipitation equipment, utilize another mask to form cathode electrode 28, be damaged to prevent above-mentioned organic El layer 26.Cathode electrode 28 preferably includes a kind of material with less work function, so that electronics is injected in organic El layer 26 effectively.This material for example comprises magnesium and silver.In the present embodiment, the magnesium of deposition 14nm and silver are to form cathode electrode 28.Cathode electrode 28 is electrically connected with aluminium auxiliary traverse 23 on being arranged on rib 22.
Shown in Fig. 5 (B), on the first type surface of display board 50, form a passivation layer 30 as protective seam.In above-mentioned precipitation equipment, form passivation layer 30, thereby cathode electrode 28 is not exposed in the atmospheric environment.For example, by the CVD method at room temperature deposited silicon nitride to form passivation layer 30.Therefore organic EL layer 26 will be reduced emission brightness by badly damaged under 100 ℃ or higher temperature.In order to prevent that pull-up from falling, preferably the stress in layer is kept to and forms organic EL layer 26 under the minimum condition.Therefore, adopt above-mentioned sedimentation.
To connect together by a plurality of display boards of above-mentioned operation preparation with cementing agent, make to form tiled display.For example, shown in Fig. 2 (C), display board 50-56 connects together and forms a tiling type display board 60.As mentioned above, display board 50-56 is attached to together in its corresponding end, and these end faces form by cut.Red, green and blue pixel arrangement among the display board 50-56 becomes to make that Two dimensional Distribution red, green, blue pixel is even on the display board 50-56.
Shown in Fig. 6 (A), UV cured resin 62 is coated on the first type surface of tiling type display board 60.Utilize the divider of discharging resin to carry out this coating, wherein divider is injector type or gap nozzle type.Can adopt other known method, as print roll coating method and silk screen print method.Shown in Fig. 6 (B), preparation has the sealing substrate 66 of black matrix 64.Sealing substrate 66 is not used in each display board 50-56, and is used for tiling type display board 60.Sealing substrate 66 is connected thereto on the first type surface of the tiling type display board 60 that is coated with UV cured resin 62.In this step, must avoid the bubble between UV cured resin 62 and the sealing substrate 66.Fig. 7 represents to seal the step that substrate 66 is connected to tiling type display board 60, not shown UV cured resin 62.
Shown in Fig. 6 (C), the black matrix 64 of sealing substrate 66 aligns with the pixel of tiling type display board 60.When UV cured resin 62 is not set, can be with the position change hundreds of nm of the sealing substrate 66 on the tiling type display board 60.Tiling type display board 60 has border 68 between display board 50-56.Shown in Fig. 6 (C), carry out the adjusting of position, make black matrix 64 correctly be positioned on the corresponding auxiliary traverse 23 of rib 22, and correctly be positioned on the border 68.The UV light beam radiation UV cured resin of representing with arrow among Fig. 6 (C) 62 is fixed to tiling type display board 60 with UV curing cured resin 62 thereby will seal substrate 66, finishes a tiling type display system 70 thus.
In tiling type display system 70, prevented the external light reflection that causes by auxiliary traverse 23 by black matrix 64.Border 68 between the display board 50-56 is covered by black matrix 64.Therefore, can obtain to have the high-contrast and the high-quality large screen display on showy border not.
[second embodiment]
The second embodiment of the present invention is described below.In the above-described embodiments, to shown in 6 (C), two rib 22 each 68 places, border between display board 50-56 are adjacent one another are as Fig. 6 (A).When deceiving the auxiliary traverse 23 of matrix 64 whole covering ribs 22, to shown in 6 (C), organic EL layer 26 is covered by black matrix 64 parts, thereby has reduced brightness as Fig. 6 (A).On the contrary, when black matrix 64 not exclusively covers organic EL layers 26 so that when obtaining high brightness, expose below black matrix 64 on border 68, makes border 68 be apparent on the screen thus.
In order to address the above problem, following method has been proposed: should cut half to each rib 22 at 68 places, border.But cutting is impossible.That is, when carrying out cut, the object that is cut must absorb laser beam with its temperature of rapid raising.But, each auxiliary traverse 23 that comprises metal is arranged on the corresponding rib 22, and metal has the big reflectivity of pair infrared laser beam.Therefore, the temperature of rib 22 can not raise by laser emission.
In this embodiment, shown in Fig. 8 (A), rib 122 and auxiliary traverse 123 are arranged on the end face 50A and the 50B place of display board 50, and this end face is connected on the end face of other display board, and wherein each auxiliary traverse 123 is arranged on the corresponding rib 122.The width W A of auxiliary traverse 123 is less than the width W B of auxiliary traverse 23, for example WA＜(WB/2).Each all is arranged on auxiliary traverse 23 on the corresponding rib 22, and it distributes regularly with constant spacing.Because auxiliary traverse 123 has width smaller, so laser beam is suppressed by the reflection of auxiliary traverse 123.Can cut in a mode, make auxiliary traverse 123 have less width.Display board end face in Fig. 8 of corresponding diagram 3 (B) expression present embodiment.Cut substrate with laser beam along dotted line, dotted line extends along the edge of rib 122.Cutting forms organic EL layer 26, cathode electrode 28 and passivation layer 30 successively according to the mode identical with first embodiment after finishing on first type surface.
Shown in Fig. 2 (C), display board 50-56 is joined together to form tiling type display board 60.In the present embodiment, shown in Fig. 9 (A), the rib 122 with the width that is roughly WB/2 is adhered to one another and forms border 68.The rib 122 that engages has width W B.That is, the rib 122 of joint has roughly the width identical with rib 22.Shown in Fig. 9 (B), UV cured resin 62 is coated on the passivation layer 30.Black matrix 164 is arranged in the sealing substrate 66, and the sealing substrate 66 of gained is put on the UV cured resin 62 of tiling type display board 60, shown in Fig. 9 (C).Slightly fine adjustment seals the position of substrate 66, thereby black matrix 164 is alignd with the pixel of tiling type display board 60.At last, shown in Fig. 9 (D), the UV light beam radiation UV cured resin of representing with arrow 62 is with UV curing cured resin 62, and will seal substrate 66 again and be fixed on the tiling type display board 60 to finish a tiling type display system 170.Fig. 9 (B) to the operation shown in 9 (D) roughly with first embodiment in identical.
In the tiling type display system of being made by above-mentioned operation 170, rib 122 is engaged with each other in the junction of display board.The auxiliary traverse that is positioned at the binding of boundary has the width roughly the same with other auxiliary traverse.Therefore, do not show the border on the screen, and can obtain high brightness.In fact, in cut, object to be cut preferably has a cut mark that depends on the kind of material and laser.
[other embodiment]
In the present invention, according to the foregoing description, different embodiment can be arranged, and different remodeling can also be arranged.For example, can be the following examples.
(1) position of cathode electrode and anode electrode can with the foregoing description in opposite.Cathode electrode can comprise metal, alloy or the intermetallic compound with less work function, thereby electronics is injected in the electron transport layer effectively.Anode electrode can comprise metal, alloy or the intermetallic compound with big work function, thereby the hole is injected in the hole transport layer effectively.
(2) though display board 50 is the top emission type, its structure is not limited to the foregoing description.For example, can be the structure shown in Figure 10 C to 10D.Usually, the organic material that is used for organic EL layer can be damaged by water and oxygen, therefore can weaken the characteristics of luminescence.In addition, cathode electrode and oxidized damage of anode electrode meeting, thereby seriously weaken the hole injectability.Therefore, preferably on organic EL layer and electrode, provide sealant, thereby avoid these assemblies to contact with atmosphere.Structure below also having proposed: between the protective seam shown in Figure 10 C 930 and translucent 932, an organic resin layer is set.The present invention can also be used for this structure.
(3) in the above-described embodiments, the present invention is used for OLED panel.But the present invention can also be used for any tiling type display system, as plasma display panel.In addition, can adopt various driving methods.
As mentioned above, according to the present invention, can obtain following advantage.
(1) because deceives matrix on the border between a plurality of display boards, so can obtain the inconspicuous large-sized monitor in screen coboundary.
(2),, can obtain not have on the screen high-quality large-sized monitor on border so the border of display board is covered by black matrix because the rib that is positioned at the display board end has little width and connects together.
(3) because the substrate of each display board that before forming organic EL layer, utilized cut, thus can accurately cut, and do not cause the deterioration of organic EL layer.
Claims (8)
1. tiling type display system, it has by a plurality of display boards are connected together the large screen display that forms, and this system comprises:
Be arranged on the sealing substrate on a plurality of display boards; And
Be arranged on the black matrix on the sealing substrate, with the raising contrast,
Wherein, black matrix is on the border between a plurality of display boards.
2. tiling type display system as claimed in claim 1, wherein, each display board all has substrate, bottom electrode, organic EL layer and the top semitransparent electrode that sets gradually; And send from the top semitransparent electrode from the light that organic EL layer sends.
3. tiling type display system as claimed in claim 2, wherein, display board has one to be used to prevent bottom electrode, organic EL layer and the impaired sealant of top semitransparent electrode.
4. tiling type display system as claimed in claim 2, wherein, display board has the rib that surrounds each organic EL layer, and each rib has an auxiliary traverse that is electrically connected to the top semitransparent electrode, and black matrix is positioned on the auxiliary traverse.
5. tiling type display system as claimed in claim 4, wherein, the auxiliary traverse of the boundary between display board has a width, and this width is about half of other auxiliary traverse width.
6. method of making tiling type display system, this tiling type display system has by a plurality of display boards being connected together the large screen display that forms, the method comprising the steps of: have each display boards of a plurality of ribs along the cutting of the outside of following rib, be used for the end face that display board is connected together in all display board end faces of the contiguous display board of this rib.
7. the method for manufacturing tiling type display system as claimed in claim 6 wherein, utilizes laser to cut each display board along the outside of this rib.
8. the method for manufacturing tiling type display system as claimed in claim 7, wherein, these a plurality of display boards have organic EL layer, and use each display board of cut before forming organic EL layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP179748/2001 | 2001-06-13 | ||
| JP2001179748 | 2001-06-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1465038A true CN1465038A (en) | 2003-12-31 |
| CN1193257C CN1193257C (en) | 2005-03-16 |
Family
ID=34179427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02802380 Expired - Fee Related CN1193257C (en) | 2001-06-13 | 2002-06-07 | Tie ring type display device, and method of manufacturing the display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1193257C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426903A (en) * | 2013-08-02 | 2013-12-04 | 京东方科技集团股份有限公司 | Electroluminescence display screen, manufacturing method of electroluminescence display and display device |
| WO2014036736A1 (en) * | 2012-09-10 | 2014-03-13 | 深圳市柔宇科技有限公司 | Large-size display screen and manufacturing method therefor |
| WO2014059601A1 (en) * | 2012-10-16 | 2014-04-24 | 深圳市柔宇科技有限公司 | Oled mosaic display screen and manufacturing method thereof |
| WO2014071587A1 (en) * | 2012-11-06 | 2014-05-15 | 深圳市华星光电技术有限公司 | Organic light-emitting diode display and method for coating polarizing sheet thereof |
-
2002
- 2002-06-07 CN CN 02802380 patent/CN1193257C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014036736A1 (en) * | 2012-09-10 | 2014-03-13 | 深圳市柔宇科技有限公司 | Large-size display screen and manufacturing method therefor |
| CN103797531A (en) * | 2012-09-10 | 2014-05-14 | 深圳市柔宇科技有限公司 | Large-size display screen and manufacturing method therefor |
| WO2014059601A1 (en) * | 2012-10-16 | 2014-04-24 | 深圳市柔宇科技有限公司 | Oled mosaic display screen and manufacturing method thereof |
| US9590025B2 (en) | 2012-10-16 | 2017-03-07 | Shenzhen Royole Technologies Co., Ltd. | Tiled OLED display and manufacturing method thereof |
| WO2014071587A1 (en) * | 2012-11-06 | 2014-05-15 | 深圳市华星光电技术有限公司 | Organic light-emitting diode display and method for coating polarizing sheet thereof |
| CN103426903A (en) * | 2013-08-02 | 2013-12-04 | 京东方科技集团股份有限公司 | Electroluminescence display screen, manufacturing method of electroluminescence display and display device |
| US9439248B2 (en) | 2013-08-02 | 2016-09-06 | Boe Technology Group Co., Ltd. | Electroluminescent display screen and method for preparing the same, and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1193257C (en) | 2005-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1919007B1 (en) | Organic light emitting display | |
| TW540021B (en) | Tiling type display device and manufacturing method therefor | |
| CN100409401C (en) | Stripping method and method for producing semiconductor device | |
| CN100350624C (en) | Display device | |
| EP1003354B1 (en) | Method of manufacturing organic el display | |
| CN100448062C (en) | Organic electro luminescent display and method for fabricating the same | |
| US7227518B2 (en) | Active-driving type organic el display device, and a method of producing the same | |
| CN100470825C (en) | Method for manufacturing electro-optic device, electro-optic device and electronic apparatus | |
| TWI289870B (en) | Light emitting device and method of manufacturing the same | |
| US20100253215A1 (en) | Organic electroluminescence device | |
| CN1607876A (en) | Organic light emitting device, manufacturing method thereof, and display unit | |
| CN1622727A (en) | Electroluminescent display device and thermal transfer donor film for the electroluminescent display device | |
| CN1838426A (en) | Organic electroluminescent display device and curing method of the device | |
| CN111886699A (en) | Organic EL display device and method for manufacturing the same | |
| US20110108812A1 (en) | Organic el device | |
| JP6837410B2 (en) | Display device including light emitting area | |
| CN111886700A (en) | Organic EL display device and method for manufacturing the same | |
| CN1193257C (en) | Tie ring type display device, and method of manufacturing the display device | |
| US7633094B2 (en) | Electroluminescence display panel, image display, and method for manufacturing them | |
| JP2002033190A (en) | Method for manufacturing light emitting device | |
| JP6926169B2 (en) | Organic EL display device and its manufacturing method | |
| KR101578703B1 (en) | Dual panel type organic electro luminescent device and method of fabricating the same | |
| JP2011113936A (en) | Photothermal conversion sheet, and method of manufacturing organic electroluminescent device | |
| JP2004326130A (en) | Tiling display device | |
| JP2010049986A (en) | Organic electroluminescent display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050316 |