JP2004326130A - Tiling display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tiling display device which utilizes organic EL display panels improved in contrast by a black matrix, is high in grade and has inconspicuous boundaries. <P>SOLUTION: The black matrix 64 is formed on a substrate 66 for sealing commonly disposed for a plurality of the display panels 60 so as to exist on the boundaries 68 of the plurality of the display panels 60. The display panels 60 are constituted by successively laminating anode electrodes 20, organic EL layers 26R, 26G and 26B and cathode electrodes on the substrate 10. Thin-film transistors are formed on the substrate 10 and the light outputted from the organic EL layers 26R, 26G and 26B is taken out of the cathode electrodes, by which the tiling display device 70 driven by an active matrix system is constituted. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a tiling type display device in which a plurality of display panels or display units are arranged, and more particularly, to a tiling type display device using a top emission type organic EL (electroluminescent) display panel. .

  Display devices using organic EL elements are expected to be put to practical use as next-generation flat panel displays. In the driving of this organic EL display device, since the response speed of the organic EL element is 1 μsec or less, duty driving by a simple matrix method is also possible. However, when ON / OFF becomes a high duty ratio, it is not sufficient. It is necessary to supply a large current to the organic EL element instantaneously in order to secure the luminance, and the element is greatly damaged. On the other hand, in the active matrix drive system, a TFT (thin film transistor) circuit is usually connected to a capacitor, and the voltage applied to the element is maintained by the capacitor. For this reason, the same voltage can always be applied to the organic EL element during one frame of the screen, and it is not necessary to flow a large current instantaneously, and damage to the element is small.

  However, when the display panel is designed by the active matrix driving method using the TFT as described above, the TFT occupies a certain area, so that the area of the effective pixel portion is reduced and the aperture ratio is reduced. In order to avoid such inconvenience, a top emission type element structure is effective.

  FIGS. 10A and 10B show a conventional type and a top emission type organic EL display panel structure, wherein FIG. 10A shows a conventional type and FIG. 10B shows a top emission type. First, starting from the conventional type shown in FIG. 2A, on a substrate 902 on which TFTs 900 are arranged in a matrix (hereinafter simply referred to as a “TFT substrate”), an electrode wiring 904 for connecting to the TFT 900 is provided with an interlayer insulating film. An anode electrode 910 is formed of a transparent conductive material via a flattening insulating film 908. The anode electrode 910 is connected to a corresponding one of the electrode wirings 904.

  An organic EL layer 914 is formed in a region on the anode electrode 910 and surrounded by the rib 912. For example, R (red), G (green), and B (blue) light emitting materials are sequentially provided. The organic EL layer 914 has a structure in which, for example, an electron transport layer, a light emitting layer, and a hole transport layer are stacked (not shown). A metal cathode electrode 916 is formed on the entire main surface on which the ribs 912 and the organic EL layer 914 are formed. Light output from the organic EL layer 914 is output in the direction of arrow Fb because the anode electrode 910 is transparent and the cathode electrode 916 reflects light with metal.

  On the other hand, in the top emission type shown in FIG. 10B, the anode electrode 920 is formed of metal, and the cathode electrode 926 of a transparent conductive material is formed on the organic EL layer 914. This is exactly the opposite relationship from the conventional type shown in FIG. A protective layer 930 and a transparent seal 932 are sequentially laminated on the entire main surface on which the rib 912 and the cathode electrode 926 are formed. Light output from the organic EL layer 914 is output in the upper surface direction indicated by the arrow Ff because the anode electrode 920 reflects light with metal and the cathode electrode 926 is transparent. Comparing the two, the pattern of the TFT 900 exists on the light output side in the case of the conventional type shown in FIG. 10A, but does not exist in the case of the top emission type shown in FIG.

  By the way, in the case of a top emission type organic EL display panel having an excellent aperture ratio, light is extracted from the upper electrode side, so that the cathode electrode 926 is a so-called transparent electrode (light-transmitting conductive film). I have. However, a transparent electrode generally has a high sheet resistance value, and when this is formed over the entire main surface of the display panel, a voltage gradient occurs in the display surface, the voltage at the center of the screen decreases, and the luminance also decreases. Become like This tendency becomes remarkable as the screen size increases, and the display quality is significantly reduced. As a method for avoiding this, as shown in FIG. 10C, by forming an auxiliary electrode 950 made of metal on the rib 912 and combining this with the cathode electrode 926, display unevenness due to a voltage gradient is avoided. A method has been proposed.

  However, in such a structure in which the auxiliary wiring is formed, as shown by the arrow Fr, the reflection of external light by the auxiliary electrode 950 increases, and the contrast of the displayed image is significantly reduced. Therefore, as shown in FIG. 10D, a method of preventing a decrease in contrast by overlaying a black matrix 960 on the auxiliary wiring 950 has been proposed. The black matrix 960 is formed on the sealing substrate 962 in advance, and is bonded to the upper surface of the substrate in FIG. Since the auxiliary wiring 950 is covered with the black matrix 960, reflection of external light is reduced and contrast is improved.

  By the way, a tiling technique is known as one technique for increasing the size of a display. This is a method of preparing a plurality of unitized flat display panels and arranging a plurality of these flat display panels in a tile shape to increase the size of the display as a whole. In such a large-screen display by tiling, it is important that the boundary between adjacent display panel units is not noticeable.

  The present invention focuses on the above points, and an object of the present invention is to provide a high-quality tiling-type display device using an organic EL display panel in which the contrast is improved by a black matrix, and in which the boundary is inconspicuous. .

In order to achieve the above object, the present invention is a tiling type display device that obtains a large-screen display by joining a plurality of display panels, and a sealing substrate provided in common to the plurality of display panels, And a black matrix for improving contrast formed on the sealing substrate, wherein the black matrix is located on a boundary between the plurality of display panels.
Further, in the display panel, an anode electrode, an organic EL layer, and a cathode electrode are sequentially laminated on a substrate, a thin film transistor is formed on the substrate, and light output from the organic EL layer is extracted from the cathode electrode. It is characterized by being driven by an active matrix system.

  One of main modes is that a wiring is connected from a source or a drain of the thin film transistor through a connection hole formed in an interlayer insulating film covering the thin film transistor, and is formed in an interlayer insulating film covering the wiring. The anode electrode is connected to the wiring via the connection hole provided. Still another embodiment is characterized in that a rib is arranged so as to surround the organic EL layer, and at least a part of the rib is provided on the connection hole where the anode electrode is connected to the wiring. I do. The above and other objects, features, and advantages of the present invention will be apparent from the following detailed description and the accompanying drawings.

  According to the present invention, since the black matrix is located on the boundary between the plurality of display panels, it is possible to obtain a large display in which the boundary is inconspicuous.

  Embodiment 1 Hereinafter, Embodiment 1 of the present invention will be described in detail. First, main manufacturing steps will be described in order. This example is an example of an active matrix drive type. First, a TFT substrate 10 as shown in FIG. 1A is prepared. The TFT substrate 10 is a substrate in which the TFTs 12 are arranged in a matrix for each pixel, and various types are known. Various manufacturing methods are known, and any of them may be applied. The gate electrode of each TFT 12 is connected to a scanning circuit (not shown).

  A first interlayer insulating film 14 is formed on the upper surface of the TFT substrate 10 so as to cover the TFT 12. The first interlayer insulating film 14 is made of, for example, silicon oxide or a silicon oxide-based material such as PSG (Phospho-Silicate Glass) containing silicon oxide containing phosphorus. On the first interlayer insulating film 14, wirings 16A and 16B are formed by patterning using aluminum, aluminum-copper alloy, or the like. These wirings 16A and 16B are used as signal lines for driving, and are connected to the source or drain of the TFT 12 via connection holes (not shown) formed in the first interlayer insulating film 14. .

  Next, as shown in FIG. 1B, a second interlayer insulating film 18 for covering the wirings 16A and 16B is formed. As the second interlayer insulating film 18, it is desirable to use a material having high flatness because it is necessary to cover the patterned wirings 16A and 16B. In addition, since an organic material to be deposited and formed in a later step may be deteriorated by moisture and may not have sufficient luminance, it is preferable to use a material having a low water absorption. In the present embodiment, the second interlayer insulating film 18 is formed on the entire main surface of the substrate by, for example, polyimide, and then a connection hole 18A for connecting to the wiring 16A is formed.

  Next, as shown in FIG. 1C, an anode electrode (lower electrode) 20 of an organic EL layer is formed on the second interlayer insulating film 18. In the case of the top emission type display panel as in this example, a conductive material having a large work function and a high light reflectance such as chromium, iron, cobalt, nickel, copper, tantalum, tungsten, platinum, and gold. Is used. In this example, it is formed of chromium. The anode electrode 20 is patterned for each pixel, and is connected to a wiring 16A via a connection hole 18A formed in the second interlayer insulating film 18.

  Next, as shown in FIG. 2A, a rib 22 is formed so as to surround each pixel (organic EL layer). The ribs 22 are formed so that the surface height thereof is sufficiently higher than the surface height of the organic EL layer formed by vapor deposition in the subsequent steps. By doing so, the ribs 22 can be used as spacers of a mask used when patterning the organic EL layer on the anode electrode 20. In the present embodiment, the ribs 22 are formed by the silicon oxide films 22A and 22B, and the aluminum layer 23 serving as the auxiliary wiring is laminated thereon. That is, first, the silicon oxide film 22A is formed so as to fill the vicinity of the connection hole 18A, and then the silicon oxide film 22B is formed by lamination. With such a laminated structure, the ribs 22 having a sufficient height can be formed. Note that the silicon oxide film 22A is an interlayer insulating film, and the silicon oxide film 22B can be considered as a rib.

  Further, the rib 22 has a side wall formed in a forward tapered shape as shown in the figure, thereby ensuring coverage of the upper common electrode (cathode electrode) covering the rib 22 having a considerable height.

  FIG. 2B schematically shows the appearance of the display panel 50 after the formation of the ribs 22 as described above. Here, as shown in FIG. 2C, when the display panels 50 to 56 are joined to obtain a tiling-type display device, the end surfaces 50A, 50A, which are joined to other display panels around the display panel 50. It is necessary to cut the TFT substrate 10 at 50B. Therefore, in the present embodiment, the outside of the rib 22 (or the outside of the auxiliary wiring 23) is cut using a laser cutter as shown by a dotted line in FIG. By using a laser cutter, high-precision cutting is possible, and a liquid such as water is not used for cooling. Therefore, it is convenient for an organic EL device that dislikes moisture.

  As the laser cutter, a high-output infrared laser such as a carbon dioxide laser is suitable. By irradiating the laser beam output from the laser transmitting device to a predetermined portion of the end portion of the display panel, the temperature is locally increased sharply, and immediately thereafter, compressed air is blown to rapidly cool. The substrate is cleaved by the stress generated at this time. FIG. 3 shows the intersection of the end surfaces 50A and 50B in an enlarged manner. When the cutting by the laser is performed, the temperature of the display panel 50 temporarily rises. An organic EL layer described later is weak to heat, and its characteristics are deteriorated. Therefore, a laser cutting operation is performed before forming the organic EL layer.

  If the electrode layers and the organic EL layers are formed in advance so that the end faces 50A and 50B of the display panel 50 coincide with the end faces of the TFT substrate 10, the laser cutting of the TFT substrate 10 does not need to be performed. Alternatively, a tiling substrate may be separately prepared, and the display panels 50 to 56 may be joined and disposed thereon.

Next, as shown in FIG. 4, an organic EL layer emitting light of R (red), G (green), and B (blue) is formed by vapor deposition. In this example, vapor deposition is performed in the order of G → B → R. As shown in FIG. 4A, a metal mask 24 having an opening corresponding to any one of R, G, and B is prepared, and the opening 24A is first positioned on the anode electrode of the G pixel. Alignment. Then, a G organic EL layer 26G is deposited on the G anode electrode 20 by resistance heating.
(1) First, as a hole (hole) injection layer 26Ga,
4,4 ', 4''-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA)
Is deposited to a thickness of 25 nm.
(2) Next, as the hole transport layer 26Gb,
4,4'-bis [N-1-naphthyl-N-phenylamino] biphenyl (α-NPD)
Is deposited to a thickness of 30 nm.
(3) Next, as the light emitting layer 26Gc,
tris (8-quinolinolato) aluminium (III) (Alq3)
Is deposited to a thickness of 50 nm. The above-described deposition of each layer is performed continuously in the same apparatus.

Next, as shown in FIG. 4B, the opening 24A of the metal mask 24 is aligned on the anode electrode of the B pixel. Then, a B organic EL layer 26B is formed on the B anode electrode 20 by vapor deposition by resistance heating.
(1) First, as the hole injection layer 26Ba,
4,4 ', 4''-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA)
Is deposited to a thickness of 18 nm.
(2) Next, as the hole transport layer 26Bb,
4,4′-bis [N-1-naphthyl-N-phenylamino] biphenyl (α-NPD) is deposited to a thickness of 30 nm.
(3) Next, as a light emitting layer 26Bc having a function as a hole blocking layer,
2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine)
Is formed to a thickness of 14 nm.
(4) Further, as the light emitting layer 26Bd,
tris (8-quinolinolato) aluminium (III) (Alq3)
Is deposited to a thickness of 30 nm. The above-described deposition of each layer is performed continuously in the same apparatus.

Next, as shown in FIG. 4C, the opening 24A of the metal mask 24 is aligned on the anode electrode of the R pixel. Then, an R organic EL layer 26R is formed on the R anode electrode 20 by vapor deposition by resistance heating.
(1) First, as the hole injection layer 26Ra,
4,4 ', 4'-tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA)
Is deposited to a thickness of 55 nm.
(2) Next, as the hole transport layer 26Rb,
4,4'-bis [N-1-naphthyl-N-phenylamino] biphenyl (α-NPD)
Is deposited to a thickness of 30 nm.
(3) Next, as the light emitting layer 26Rc,
2,5-bis [4- (N-methoxyphenyl-N-phenylamino) styryl] benzene-1,4-dicarbonitrile (BSB-BCN)
Is deposited to a thickness of 30 nm.
(4) Next, as the electron transport layer 26Rd,
tris (8-quinolinolato) aluminium (III) (Alq3)
Is deposited to a thickness of 30 nm. The above-described deposition of each layer is performed continuously in the same apparatus.

  Next, after the evaporation of the organic EL layer 26, a cathode electrode (upper electrode) 28 is formed as a common electrode of each pixel as shown in FIG. The cathode electrode 28 is formed by exchanging a mask in the same apparatus in order to prevent the organic EL layer 26 from deteriorating. As a material of the cathode electrode 28, a material having a small work function, for example, magnesium and silver is used so that electrons can be efficiently injected into the organic EL layer 26. Then, it is formed to a thickness of, for example, 14 nm by co-evaporation. The cathode electrode 28 is electrically connected to the auxiliary wiring 23 made of aluminum formed on the rib 22.

  Next, as shown in FIG. 5B, a passivation film (protective film) 30 is formed on the entire main surface. After the formation of the cathode electrode 28, the passivation film 30 is formed in the same apparatus without being exposed to the air. For example, a silicon nitride film is formed at a room temperature by a CVD method. This is because the organic EL layer 26 rapidly deteriorates at a temperature of 100 ° C. or more, and the luminance decreases. Further, in order to prevent the film from peeling off, the film is formed under the condition that the stress of the film is minimized. Is desirable.

  A plurality of the display panels obtained as described above are prepared, arranged in a tile shape, and joined at an adhesive. For example, as shown in FIG. 2C, four display panels 50 to 56 are joined to obtain a tiling type display panel 60. Of course, as described above, the display panels 50 to 56 are joined at the surface where the laser cutting has been performed. Note that the R, G, and B pixel arrays in each of the display panels 50 to 56 are considered so that the two-dimensional array of R, G, and B pixels is continuous between the display panels.

  Next, as shown in FIG. 6A, a UV curable resin 62 is applied onto the main surface of the tiling type display panel 60 as described above. The resin is applied by discharging the resin from a syringe type or slit nozzle type dispenser. In addition, various known methods such as a roll coating method and a screen printing method may be used. Next, as shown in FIG. 6B, a sealing substrate 66 on which a black matrix 64 is formed is prepared. The sealing substrate 66 is not separately prepared for the display panels 50 to 56, but is prepared for the entire tiling display panel 60. Paste to. At this time, care is taken so that air bubbles and the like do not enter between the UV curing resin 62 and the sealing substrate 66. FIG. 7 shows a state in which the tiling type display panel 60 and the sealing substrate 66 are bonded together (the UV curing resin 62 is not shown).

  Next, as shown in FIG. 6C, alignment is performed so that the relative positional relationship between the pixels of the tiling type display panel 60 and the black matrix 64 of the bonded sealing substrate 66 is matched. If the UV curing resin 62 is in an uncured state, it is sufficiently possible to adjust the relative position between the tiling type display panel 60 and the sealing substrate 66 by about several hundred μm. This position adjustment is performed so that the black matrix 64 is directly above the auxiliary wiring 23 of the rib 22 and directly above the boundary 68 between the display panels 50 to 56, as shown in FIG. Finally, as shown by arrows in FIG. 6C, UV light is irradiated to cure the UV curable resin 62, fix the relative positions of the tiling type display panel 60 and the sealing substrate 66, and perform tiling. A type display device 70 is obtained.

  In the tiling display device 70 obtained as described above, reflection of external light by the auxiliary wiring 23 is favorably prevented by the black matrix 64. The boundary 68 between the display panels 50 to 56 is well hidden by the black matrix 64. For this reason, a high-definition large-screen display with good contrast without noticeable boundaries can be obtained.

  <Second Embodiment> Next, a second embodiment of the present invention will be described. In the above-described embodiment, as shown in FIG. 6, two ribs 22 are arranged at the boundary 68 between the display panels 50 to 56. When the black matrix 64 is formed so as to completely cover the auxiliary wirings 23 of the ribs 22, the organic EL layer 26 is covered more than necessary with the black matrix 64 as shown in FIG. . Conversely, when trying to obtain a good luminance, the auxiliary wiring 23 is exposed from the black matrix 64 at the boundary 68, and the boundary appears on the display screen.

  Therefore, as one method, a method of cutting the rib 22 at the boundary 68 can be considered, but the auxiliary wiring 23 made of metal is provided on the surface of the rib 22. Although a sharp temperature rise due to the absorption of laser light is necessary for the cleavage, the light reflectance of the metal in the infrared region is high. Therefore, the temperature of the rib 22 cannot be increased by laser irradiation.

  Therefore, in the present embodiment, as shown in FIG. 8A, the width WA of the auxiliary wiring 123 at the end surfaces 50A and 50B joined to another display panel around the display panel 50 is set at another predetermined pitch. The auxiliary wiring 23 on the regularly formed rib 22 is formed narrower than the width WB. For example, WA <(WB / 2). As described above, by reducing the width of the auxiliary wiring 123, the reflection of the laser beam at the portion is reduced, and the rib 122 can be cut with the width reduced. FIG. 8B corresponds to FIG. 3 described above, and shows the state of the end portion of the display panel in the present embodiment, and the laser cutting is performed along the auxiliary wiring edge indicated by the dotted line. After the cleavage, the organic EL layer 26, the cathode electrode 28, and the passivation film 30 are sequentially formed on the main surface in the same manner as in the above embodiment.

  Next, as shown in FIG. 2C, the four display panels 50 to 56 are joined to obtain a tiling type display panel 60. As shown in FIG. 9A, in the present embodiment, a rib 122 having a width of approximately WB / 2 is joined at the boundary 68. Therefore, the ribs as a whole are WB ribs, and have a width substantially equal to that of the other ribs 22. Next, a UV curing resin 62 is applied on the main surface of the tiling type display panel 60 as shown in FIG. 9B. Then, as shown in FIG. 9C, a sealing substrate 66 on which the black matrix 164 is formed is prepared and bonded to the resin-coated surface of the tiling type display panel 60. Next, as shown in FIG. 9D, alignment is performed so that the relative positional relationship between the pixels of the tiling type display panel 60 and the black matrix 164 of the bonded sealing substrate 66 is matched. Finally, as shown by arrows in FIG. 9D, UV light is irradiated to cure the UV curable resin 62, fix the relative positions of the tiling type display panel 60 and the sealing substrate 66, and perform tiling. The pattern display device 170 is obtained. The operations in FIGS. 9B to 9D are basically the same as those in the first embodiment.

  In the tiling type display device 170 obtained as described above, the rib 122 comes into contact with the center at the panel joining portion, and the auxiliary wiring at the boundary portion has a width substantially equal to the auxiliary wiring in other portions. For this reason, the boundary can be completely hidden, and good luminance can be obtained. In actual laser processing, it is preferable to provide a margin in consideration of a material to be used, a laser, and the like.

<Other Embodiments> The present invention has many embodiments, and various modifications can be made based on the above disclosure. For example, the following is also included.
(1) The relationship between the cathode and the anode may be reversed from the above description. As the cathode electrode, a metal, an alloy, or a metal compound having a low work function is used so that electrons can be efficiently injected into the electron transport layer. As the anode electrode, a metal, an alloy, or a metal compound having a large work function is used so that holes can be efficiently injected into the hole transport layer.
(2) The laminated structure of the display panel 50 may be any structure as long as it is a top emission type, in addition to the structure described in the above embodiment. For example, the present invention can be applied to the structure shown in FIG. Further, it is generally known that the organic material used in an organic EL device rapidly deteriorates in light emission characteristics when exposed to moisture or oxygen. Furthermore, the cathode and anode electrodes also rapidly deteriorate their ability to inject electrons and holes due to oxidation in air. For this reason, it is more convenient to have a sealing layer that blocks the contact of the organic EL layer and the electrode with the outside air. In view of the above, a proposal has been made in which an organic resin layer is formed as a sealing layer between the protective layer 930 and the transparent seal 932 in FIG. The present invention is similarly applicable to such a device.
(3) Further, in each of the above embodiments, the present invention is applied to an organic EL display panel, but does not prevent application to general tiling type display devices such as a plasma type display panel. Also, various known driving methods may be used.

FIG. 3 is a main end view showing the manufacturing process of the first embodiment of the present invention. FIG. 3 is a main end view showing the manufacturing process of the first embodiment of the present invention. FIG. 3 is a schematic perspective view showing a part of FIG. 2 in an enlarged manner. FIG. 3 is a main end view showing the manufacturing process of the first embodiment of the present invention. FIG. 3 is a main end view showing the manufacturing process of the first embodiment of the present invention. FIG. 3 is a main end view showing the manufacturing process of the first embodiment of the present invention. FIG. 3 is a schematic perspective view showing a state of a display panel after tiling and a state of overlap with a black matrix. It is a principal end view showing the manufacturing process of Embodiment 2 of the present invention. It is a principal end view showing the manufacturing process of Embodiment 2 of the present invention. It is a principal end view showing a display panel in the background art of the present invention.

Explanation of reference numerals

10 TFT substrate 12 TFT
14, 18 interlayer insulating films 16A, 16B wiring 18A connecting hole 20 anode electrode 22 ribs 22A, 22B silicon oxide film 23 aluminum layer (auxiliary wiring)
24 Metal mask 24A Openings 26, 26R, 26G, 26B Organic EL layer 26Ba Hole injection layer 26Bb Hole transport layer 26Bc Light emitting layer 26Bd Light emitting layer 26Ga Hole injection layer 26Gb Hole transport layer 26Gc Light emission Layer 26Ra Hole injection layer 26Rb Hole transport layer 26Rc Light emitting layer 26Rd Electron transport layer 28 Cathode electrode 30 Passivation films 50 to 56 Display panels 50A and 50B End face 60 Tiling display panel 62 UV curing Resin 64 Black matrix 66 Sealing substrate 68 Boundary 70 Tiling display device 122 Rib 123 Auxiliary wiring 164 Black matrix 170 Tiling display device

Claims (3)

A tiling display device in which a plurality of display panels are joined to obtain a large-screen display,
A sealing substrate provided in common for the plurality of display panels,
A black matrix for improving contrast formed on the sealing substrate,
, Respectively,
In the display panel, an anode electrode, an organic EL layer, and a cathode electrode are sequentially stacked on a substrate,
A thin film transistor is formed on the substrate,
Light output from the organic EL layer is extracted from the cathode electrode,
The black matrix is located on a boundary between the plurality of display panels,
A tiling display device driven by an active matrix method.   A wiring is connected from a source or a drain of the thin film transistor via a connection hole formed in an interlayer insulating film covering the thin film transistor, and the wiring is connected through a connection hole formed in the interlayer insulating film covering the wiring. The tiling display device according to claim 1, wherein the anode electrode is connected to a wiring. The rib is disposed so as to surround the organic EL layer, and at least a part of the rib is placed on the connection hole where the anode electrode is connected to the wiring. Tiling type display device.

Images