JP4884452B2 - Method for manufacturing organic electroluminescent panel - Google Patents

Description

  The present invention relates to a method for manufacturing an organic electroluminescent panel, and more particularly to a method for forming an insulating layer and an organic layer thereof.

  An EL panel using an electroluminescence (EL) element, which is a self-luminous element, as a light-emitting element for each pixel is advantageous in that it is self-luminous and thin and consumes less power. (LCD) and CRT have attracted attention as a display device replacing a display device such as CRT, and research is being advanced.

  In particular, an active matrix EL panel in which a thin film transistor (TFT) or the like is provided in each pixel as a switching element for individually controlling the organic EL element and the EL element is controlled for each pixel is expected as a high-definition panel. .

  An organic EL element has a structure in which an organic layer containing organic light emitting molecules is sandwiched between an anode and a cathode, and holes injected from the anode and electrons injected from the cathode are recombined in the organic layer to form an organic layer. It utilizes the principle that light emission occurs when a light emitting molecule is excited and returns to the ground state.

  In the above active matrix EL panel, in order to control the EL element for each pixel, one of the anode and the cathode is usually connected to the TFT as an individual electrode for each pixel, and the other is used as a common electrode. In particular, the anode, which is frequently used as a transparent electrode, is connected to the TFT as a lower layer electrode, the cathode, which is frequently used as a metal electrode, is configured as a common electrode, and the anode (lower electrode), organic layer, and cathode (upper electrode) are stacked in this order And the structure which permeate | transmits a board | substrate from an anode side and inject | emits light outside is known.

  In such a configuration, since the anode is individually patterned for each pixel, an end portion of the anode necessarily exists for each pixel. At the end of the anode, electric field concentration is likely to occur, and since the organic layer is usually thin, the anode and the cathode may be short-circuited and display defects may occur. It has been proposed to cover the edges. For example, Patent Document 1 below discloses a configuration in which an end of an anode is covered with a bank layer made of an insulating material.

  Here, in the organic EL element, the region where the anode and the cathode are directly opposed to each other with the organic light emitting layer interposed between the light emitting region and the organic layer has a rectifying property and the electric resistance is relatively high. Become. Therefore, the organic layer is not formed in an individual pattern like an electrode in principle, and is often formed on the entire surface of the substrate.

  On the other hand, since it is necessary to use different organic light emitting materials in order to obtain each of R, G, and B emission colors, the organic light emitting layer for each color for R, G, and B for color display. It is necessary to form individually.

When the organic layer is formed by vacuum deposition, the patterning of the film is performed simultaneously with the film formation using the vapor deposition mask, and the element of the vapor deposition mask opening coincides exactly with the light emitting layer formation position during vapor deposition. Positioning of the formation substrate and the vapor deposition mask is performed.
Japanese Patent Laid-Open No. 11-24606

For alignment between the substrate and the vapor deposition mask, actually, the position of the vapor deposition mask is finely adjusted in a state where the vapor deposition mask is in contact with the light emitting layer forming surface of the substrate. At the time of forming the light emitting layer, at least a hole transport layer is already formed so as to cover the anode and the planarization insulating film, and this hole transport layer is used as an evaporation mask when aligning the vapor deposition mask used for forming the light emitting layer. Will rub.

  However, the organic layer including the hole transport layer has low mechanical strength, and the hole transport layer may be peeled off at the time of alignment of the vapor deposition mask, or shavings of the hole transport layer may adhere to the light emitting layer forming region as dust. is there. Moreover, the dust adhering to a vapor deposition mask may adhere to a light emitting layer formation area at the time of alignment. Due to such peeling of the hole transport layer and adhesion of dust to the light emitting layer formation region, the organic light emitting layer formed thereon may be altered due to dust mixing, or the light emitting layer film may be caused by dust. There is a problem that the step is not completely covered and is divided to cause a light emission failure.

  The present invention has been made in view of the above problems, and relates to a method for manufacturing an organic EL panel in which an organic layer is formed with higher reliability.

  The present invention relates to a method for manufacturing an organic electroluminescent panel in which a plurality of organic electroluminescent elements each having an organic layer containing at least an organic luminescent material between a lower individual electrode and an upper electrode are formed above the substrate. An end cover insulating layer that covers the peripheral end of the lower individual electrode by forming a lower individual electrode on each pixel, laminating an insulating material on the lower individual electrode, and patterning the insulating material, and an end An upper insulating layer provided on the outer peripheral side of the cover insulating layer and thicker than the end cover insulating layer, and the organic layer is positioned outside the boundary between the end cover insulating layer and the lower individual electrode, It forms for every pixel so that it may terminate inside the formation area of an insulating layer, and an upper electrode is formed so that an organic layer may be covered.

  In another aspect of the present invention, the organic layer includes at least a hole injection layer and an organic light emitting layer, the hole injection layer is formed to terminate inside the formation region of the upper insulating layer, and the organic light emitting layer is formed. The upper insulating layer is formed on the upper electrode side of the hole injection layer and inside the upper insulating layer formation region.

  In another aspect of the present invention, an organic electroluminescence device in which a plurality of organic electroluminescence devices each having at least a hole injection layer and an organic light emitting layer as an organic layer between a lower individual electrode and an upper electrode is formed above a substrate. A method for manufacturing a panel, wherein a lower individual electrode is formed on a substrate for each pixel, an insulating material is laminated on the lower individual electrode, and the insulating material is patterned to cover a peripheral end portion of the lower individual electrode. An end cover insulating layer and an upper insulating layer provided on the outer peripheral side than the end cover insulating layer and thicker than the end cover insulating layer are formed, and the hole injection layer is formed as a lower individual electrode and an end cover insulating layer. And the organic light emitting layer is terminated on the upper electrode side of the hole injection layer and outside the boundary with the lower individual electrode and inside the formation region of the upper insulating layer. So that each pixel is formed and the top electrode is a hole Formed so as to cover the sintering bed and an organic light emitting layer.

  In another aspect of the present invention, the charge transport layer is provided between the hole cover layer and the organic light emitting layer and / or between the organic light emitting layer and the upper electrode, and the end cover insulating layer and the lower individual layer. It is formed for each pixel so as to end outside the boundary with the electrode and inside the formation region of the upper insulating layer.

  In another aspect of the present invention, the end cover insulating layer and the upper insulating layer are formed by performing multistage exposure or gray tone exposure of the insulating material.

  In another aspect of the present invention, the organic layer includes a plurality of organic layers, and the size of each of the plurality of organic layers is formed so that the upper layer is smaller than the lower layer.

In another aspect of the present invention, a mask for forming the organic layer is supported on the upper surface of the upper insulating layer,
An organic layer is formed.

  According to the present invention, since the peripheral end portion of the lower individual electrode is covered with the end cover insulating layer, the upper electrode and the lower individual electrode formed with the organic layer interposed therebetween are reliably insulated. . Further, by providing an upper insulating layer thicker than the end cover insulating layer on the outer peripheral side of the end cover insulating layer, and terminating the organic layer inside the formation region of the upper insulating layer, for example, after forming the organic layer, It is this upper layer that the organic layer is damaged by contact with the outside or a member used in the process before the upper electrode is formed or when the substrate is transported or the upper layer is formed until the element is completed. This can be prevented by the insulating layer.

  In addition, since the organic layer is formed to the outside of the boundary between the end cover insulating layer and the lower individual electrode, the contact area between the lower individual electrode and the organic layer even if there is a slight shift in the formation position of the organic layer That is, it is possible to prevent the light emitting area from changing. In addition, since the end cover insulating layer is thinner (lower) than the upper insulating layer, the level difference between the lower individual electrode and the end cover insulating layer is small, and the organic layer is located at this boundary position. It is possible to reduce the possibility that cracks will occur.

  Furthermore, unlike other organic layers, the hole injection layer is usually very thin, and is formed using a material having a relatively high mechanical strength and excellent adhesion to the underlying insulating layer and lower individual electrode. be able to. For this reason, when the hole injection layer is formed in an individual pattern such as a hole transport layer or a light emitting layer using a vapor deposition mask on the hole injection layer, even if it comes into contact with the mask, it is peeled off or scraped off to form an upper layer. The possibility of generating dust that adversely affects the organic layer is low. Therefore, the hole injection layer is not terminated inside the mask support insulating part, but only the light emitting layer and the charge transport layer on the hole injection layer are terminated, so that the organic layer can be formed efficiently and with high reliability. It becomes.

  Further, by using multi-step exposure or gray-tone exposure, the upper insulating layer and the end cover insulating layer can be formed in a necessary region without increasing the number of processes.

In addition, the size of each layer of the organic layer is such that the upper layer is slightly smaller than the lower layer, so that the upper layer covers the corner of the lower end of the lower layer and a crack or the like occurs in the upper layer at this corner. It can prevent more reliably that a part becomes a starting point of a light emission failure area | region.
Further, when positioning the mask when forming the organic layer, the mask can be supported by the upper insulating layer formed outside the end cover insulating layer covering the end of the lower individual electrode, and the organic layer is in contact with the vapor deposition mask. Therefore, it is possible to reliably prevent the organic layer having a low mechanical strength from being peeled off or the generation of dust due to contact with the mask.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments (hereinafter, embodiments) of the invention will be described with reference to the drawings.

  FIG. 1 shows a typical circuit configuration per pixel of an active matrix type organic EL panel according to an embodiment of the present invention. In the active matrix organic EL panel, a plurality of gate lines GL extend in the row direction on the substrate, and a plurality of data lines DL and power supply lines VL extend in the column direction. Each pixel is configured in the vicinity of the intersection of the gate line GL and the data line DL, and includes an organic EL element 50, a switching TFT (first TFT) 10, an EL element driving TFT (second TFT) 20, and a storage capacitor Cs. Prepare.

The first TFT 10 is connected to the gate line GL and the data line DL, and is turned on when the gate electrode receives a gate signal (selection signal). At this time, the data signal supplied to the data line DL is held in the holding capacitor Cs connected between the first TFT 10 and the second TFT 20. A voltage corresponding to the data signal supplied via the first TFT 10 is supplied to the gate electrode of the second TFT 20, and the second TFT 20 supplies a current corresponding to the voltage value from the power supply line VL to the organic EL element 50. . By such an operation, the organic EL element 50 emits light at a luminance corresponding to the data signal for each pixel, and a desired image is displayed.

[Embodiment 1]
FIG. 2 is a cross-sectional view showing a main part of the active matrix organic EL panel as described above. Specifically, a second TFT 20 formed on the glass substrate 10 and an organic EL element 50 in which an anode 52 is connected to the TFT 20 are shown. FIG. 3 shows a schematic layout of a light emitting region in one pixel of an active matrix type organic EL panel.

  The organic EL element 50 has a structure in which an organic layer 60 containing an organic light emitting material is formed between an anode 52 and a cathode 54. In the example shown in FIG. 2, it is formed in an individual pattern for each pixel from the lower layer side. The anode (lower individual electrode) 52, the organic layer 60, and the cathode (upper electrode) 54 formed in common for each pixel are laminated in this order.

On the glass substrate 10, _two buffer layers 12 in which SiNx and SiO ₂ are laminated in this order are formed on the entire surface in order to prevent impurities from entering from the glass substrate 10. On the buffer layer 12, a large number of thin film transistors for controlling the organic EL elements in each pixel are formed. In FIG. 2, the second TFT 20 is shown as described above, and the first TFT and the storage capacitor Cs are omitted. ing. Note that a similar TFT is formed in the periphery of the display portion for a driver circuit that supplies a data signal and a gate signal to each pixel.

A semiconductor layer 14 made of polycrystalline silicon or the like is formed on the buffer layer 12, and a gate insulating film 16 made of a two-layer film in which SiO ₂ and SiNx are stacked in this order is formed covering the semiconductor layer 14. A gate electrode 18 made of Cr, Mo, or the like is formed on the gate insulating film 16, and a region immediately below the gate electrode 18 of the semiconductor layer 14 is a channel region, and both sides of the channel region are p-ch type. Is doped with B or the like, and in the case of the n-ch type, P or the like is doped to form a source / drain region. On the gate electrode 18 is formed an interlayer insulating film 20 in which SiNx and SiO ₂ are laminated in this order so as to cover the entire surface of the substrate including the electrode 18. A contact hole is formed through the interlayer insulating film 20 and the gate insulating film 16, and a source electrode 22s and a drain electrode 22d made of Al or the like are formed in the contact hole, and the semiconductor exposed under the contact hole. A source electrode 22s is connected to the source region of the layer 14, and a drain electrode 22d is connected to the drain region. Note that the source electrode 22s (which may be the drain electrode 22d depending on the conductivity of the second TFT 20) also serves as the power supply line VL.

  A first planarization insulating layer 28 made of an organic material such as acrylic resin is formed on the entire surface of the substrate so as to cover the interlayer insulating film 20, the source electrode 22s, and the drain electrode 22d. Further, a moisture blocking layer made of a SiNx or TEOS film may be formed between the first planarization insulating layer 28 and the interlayer insulating film 20, the source electrode 22s, and the drain electrode 22d.

  A lower individual electrode 52 of an organic EL element having an individual pattern for each pixel is formed on the first planarization insulating layer 28. The lower individual electrode (hereinafter referred to as a pixel electrode) is an anode as described above. A transparent conductive material such as ITO is used. Further, the pixel electrode 52 is connected to the drain electrode 22d exposed at the bottom of the contact hole in the contact hole opened in the first planarization insulating layer 28 (may be the source electrode 22s depending on the conductivity of the second TFT 20).

  The pixel electrode 52 is independent for each pixel and is formed in a pattern as shown in FIG. 3 as an example. A second planarization insulating layer 32 is formed on the entire surface of the substrate so as to cover only the end portions of the pixel electrodes 52. The second planarization insulating layer 32 is opened in the light emitting region of the pixel electrode 52, and covers an end cover portion 32a that covers the entire periphery of the pixel electrode 52, and a thick upper layer outside the end cover portion 32a. An insulating layer 32b is provided. Here, the upper insulating layer 32b is a thick mask support portion that supports an evaporation mask used when the organic layer 60 is formed by vacuum evaporation on its upper surface (hereinafter, this upper insulating layer is described as a mask support portion 32b). ). When the pixel electrode 52 is, for example, 60 μm square, the width of the end cover portion 32a of the second planarization insulating layer is about 10 μm to 20 μm, and the end cover portion 32a is emphasized in FIG. Although described, if it overlaps with the pixel electrode 52 by about several μm, it is sufficient for protecting the end portion. The shape of the mask support portion 32b may be any of a column shape (including a cone shape), a wall shape, or a frame shape surrounding the entire outer periphery of the end cover portion 32a. The width of the mask support portion 32b is a mask. There is no particular limitation as long as it can be supported without deformation as much as possible.

  Here, the second planarization insulating layer 32 is formed using a resin such as an acrylic resin. However, the second planarization insulating layer 32 is not limited to the planarization material and can cover the end of the pixel electrode 52 and is formed relatively thick. An insulating material such as TEOS (tetraethoxysilane) that can be used may be used.

  In order to form the end cover portion 32a and the mask support portion 32b almost simultaneously using the same insulating material as described above, it is preferable to employ multi-step exposure, gray tone exposure, or the like.

  In the case of multi-step exposure, first, a second planarization insulating material made of an acrylic resin agent containing a photosensitive agent is applied to the entire surface of the substrate so as to cover the pixel electrode 52 formed on the first planarization insulating layer 28. Coat. Next, for example, first exposure is performed using a first photomask having an opening other than the mask support portion formation region, and further, a second photo having an opening other than the mask support portion formation region and the end cover formation region is opened. Second exposure is performed using a mask. After the exposure, the second flat insulating material is removed from the region exposed to the etching solution. According to such a method, all of the second planarization insulating material is removed from the portion exposed twice, that is, the portion corresponding to the light emitting region, and the height of the end cover portion forming region subjected to the single exposure is increased. In the mask support portion forming region that has been reduced and has not been exposed even once, the desired second planarizing material remains thick. Therefore, an opening, an end cover portion 32a, and a mask support portion 32b are formed in the second planarization insulating layer 32.

  Further, in the case of gray tone exposure, as in the case of multi-step exposure, a second flattening insulating material made of an acrylic resin agent containing a photosensitizer is spin-coated on the entire surface, and a completely opened portion as a photomask And a gray-tone opening portion having a numerical aperture adjusted by a dot, a slit, or the like in accordance with a target thickness. The exposure is performed once using this gray tone mask, so that the completely opened portion has the maximum exposure amount, and the gray tone portion has the exposure amount corresponding to the numerical aperture. For example, the second flattening material in the maximum exposure region is completely The exposure area of the gray tone portion is reduced in thickness by an amount corresponding to the exposure amount, and the unexposed area remains without being removed. Even in this case, the opening, the end cover portion 32a, and the mask support portion 32b can be formed in the second planarization insulating layer 32.

  In addition, when forming the edge part cover part 32a and the mask support part 32b by another process or another material, it is not necessary to employ | adopt the above formation methods.

After the end cover portion 32a and the thicker (higher) mask support portion 32b are formed on the second planarization insulating layer 32 as described above, in this embodiment, as shown in FIG. The exposed surface of the pixel electrode 52 of the substrate is heated by using a vapor deposition mask 70 having an opening pattern larger than the opening of the second planarization insulating layer 32 whose surface is exposed and terminating inside the mask support 32b. The organic layer 60 is laminated so as to cover the surface. Here, in the organic layer 60, a hole injection layer 62, a hole transport layer 64, a light emitting layer 66, and an electron transport layer 68 are laminated in this order from the anode 52 side.

  In the present embodiment, as described above, for example, the hole injection layer 62, the hole transport layer 64 that is a charge transport layer, the electron transport layer 68, and the like can be used even if the luminescent colors are different. In addition to the light emitting layer 66, each of these layers is a pattern for each pixel and a pattern that terminates inside the mask support portion 32b for each pixel by the vapor deposition mask 70 having an opening pattern for each pixel. To form. In particular, in this embodiment, the hole injection layer 62 and the hole transport layer 64 that are formed before the light emitting layer 66 are masked so that these layers are not formed on the upper surface of the mask support portion 32b in the same manner as the light emitting layer 66. By using a pattern that terminates inside the formation region of the support portion 32b, the organic layer is prevented from being damaged or dust generated when the vapor deposition mask 70 is positioned. Furthermore, the thick mask support 32b can prevent the organic layer from directly hitting and being damaged somewhere during the transportation of the substrate even in the subsequent process, for example, when the cathode 54 is formed or thereafter.

  Further, the end position of the organic layer 60 is not only inside the formation region of the mask support portion 32b but also outside the opening (corresponding to the light emitting region) of the second planarization insulating layer 32, that is, the end cover portion 32a. And outside of the boundary between the pixel electrodes 52. By forming the organic layer 60 so as to cover the outside of the opening, that is, to the region where the end cover portion 32a is formed, the second planarization insulating layer 32 of the second planarization insulating layer 32 is formed even if a slight shift occurs in the formation position of the organic layer 60. The opening region is reliably covered, and variation in the light emission area for each pixel is suppressed. Further, when the end portion of the organic layer 60 is located at the boundary between the opening region and the end cover portion 32a, the step becomes very large, and the cathode 54 formed on the organic layer 60 in common for each pixel is formed on the step. There is a possibility of disconnection at the portion or short circuit between the exposed anode 52 and cathode 54, but this is surely prevented.

  The relationship of the size (area) of each layer of the organic layer 60 is not particularly limited, but the upper layer covers the corner of the lower end of the lower layer so that the upper layer is slightly smaller than the lower layer. It is possible to more reliably prevent a crack or the like from occurring in the upper layer at the portion and the crack portion to be the starting point of the defective light emission region.

  When each layer of the organic layer 60 is formed using the same vapor deposition mask 70, after forming the second planarization insulating layer 32 (32a, 32b), the vapor deposition mask 70 is placed on the upper surface (lower side in FIG. 4). The position of the vapor deposition mask 70 is moved and finely adjusted as necessary so that each opening of the mask overlaps the exposed surface (light emitting region) of each corresponding pixel electrode 52. After positioning, the vapor deposition source containing the hole injection material is heated to stack the hole injection layer 62 on the surface of the pixel electrode 52, and the vapor deposition material is sequentially changed to a hole transport material, a light emitting layer, and an electron transport material, Alternatively, the hole transport layer 64, the light emitting layer 66, and the electron transport layer 68 are stacked by changing the deposition chamber. In addition, when using the vapor deposition mask 70 from which the magnitude | size of an opening part etc. differs in each layer of the organic layer 60, or in any layer, it is supporting the mask support part 32b each time the mask is changed. Each layer can be formed in substantially the same procedure as in the case of using the same mask except that the position is finely adjusted.

  The cathode 54 has a structure in which LiF / Al is laminated in order from the metal layer such as Al or the electron transport layer 68 side, and the electron transport layer 68 at the uppermost layer of the organic layer formed as described above. It is formed so as to cover almost the entire surface of the substrate including the part cover part 32 a and the mask support part 32. The cathode 54 can be formed by using a vacuum evaporation method in the same manner as the organic layer after removing the evaporation mask 70 used for forming the organic layer.

Here, when an example of the material and thickness of each layer of the organic EL element 50 is shown, in order from the lower layer,
(i) Anode 52 made of ITO or the like: about 60 nm to 200 nm,
(ii) hole injection layer 62 made of copper phthalocyanine (CuPc), CFx, or the like: about 0.5 nm;
(iii) hole transport layer 64 made of NPB (N, N′-di (naphthalene-1-yl) -N, N′-diphenyl-benzidine) or the like: 150 nm to 200 nm,
(iv) Organic light emitting layers 66 made of different materials or combinations thereof for each of RGB: 15 nm to 35 nm, respectively
(v) Electron transport layer 68 made of Alq (aluminum quinolinol complex), etc .: 35 nm
degree,
(vi) Cathode 54 having a laminated structure of LiF (electron injection layer) and Al: LiF layer is about 0.5 nm to 1.0 nm, and Al layer is about 300 nm to 400 nm.

  Here, the height difference between the mask support portion 32 b and the end cover portion 32 a of the second planarization insulating layer 32 is preferably larger than the total thickness of the organic layer 60. With such a height difference, when forming any layer of the organic layer 60, the deposition mask can be reliably supported on the upper surface of the mask support portion 32b during alignment and deposition. The mask is prevented from coming into contact with the surface of the lower layer formed inside, and the organic layer peeling or dust contamination due to contact with the vapor deposition mask is reliably reduced.

  As an example, the thickness of the organic layer 60 is often thinner than 300 nm when a low molecular organic material is used (in the above example, the organic layer is about 200 nm to 271 nm). In this case, the end cover portion 32a and the mask support are used. The height difference from the upper surface (mask support surface) of the portion 32b may be about 300 nm.

  When an organic resin is used as the second planarizing material, the thickness (height) of the end cover portion 32a is, for example, about 200 nm, and the thickness (height) of the mask support portion 32b is, for example, about 1 μm. is there. Even when an insulating material such as TEOS is used, the height of the end cover portion 32a is, for example, about 200 nm, and the height of the mask support portion 32b is about 500 nm to 700 nm, so that the mask support portion 32b and the end cover are covered. The height difference from the portion 32a can be made larger than the total thickness of the organic layer 60, and the mask can be reliably supported while protecting the organic layer.

  Further, since the height of the end cover portion 32a is set to about 200 nm, which is a relatively low level as the planarizing insulating layer, the step difference between the end cover portion 32a and the opening of the planarizing insulating layer 32 is reduced. Since it becomes small and gentle, it is possible to reliably prevent cracking of the organic layer at this boundary.

[Embodiment 2]
FIG. 5 is a schematic diagram illustrating a cross-section of the main part of the pixel portion of the organic EL panel according to the second embodiment. The difference from the first embodiment is that when the lower individual electrode is an anode, only the hole injection layer 62 formed in the lowermost layer of the organic layer 60 is the entire surface of the substrate, that is, the mask support portion 32b. It is also formed on the mask support surface. Of course, all the other layers of the organic layer 60 are terminated on the inner side of the support surface of the mask support portion 32b in the same individual pattern for each pixel as in the first embodiment.

  As described above, the hole injection layer 62 is made of a material having a relatively high mechanical strength such as CuPc or CFx (x is a natural number) and having high adhesion to the lower layer regardless of the emission color. The thickness is about 5 nm, which is very thin compared to other organic layers. For this reason, the hole injection layer 62 can withstand contact by the mask even when the position of the vapor deposition mask 70 is moved and finely adjusted while keeping the vapor deposition mask 70 in contact with the support surface of the mask support portion 32b.

Therefore, in the second embodiment, the hole injection layer 62 is formed on the entire surface of the substrate without using an evaporation mask of individual patterns for each pixel, and has a low mechanical strength and is thicker than 1 nm. Each of the layer 66 / electron transport layer 68 has an individual pattern for each pixel so as not to be formed on the mask support surface of the mask support portion 32b.

  By making the hole injection layer 62 common to each pixel without making an individual pattern for each pixel, it is possible to save the trouble of aligning a dedicated mask, and between the lower anode 52 and the upper cathode 54. Since the hole injection layer 62 is always present in an extra layer, the coverage of the cathode 54 and the breakdown voltage of both electrodes can be improved accordingly.

It is a figure which shows the schematic circuit structure per pixel of the active matrix type organic electroluminescent panel of this invention. It is a figure which shows the schematic cross section of the principal part of the pixel part of the active matrix organic electroluminescent panel which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the schematic layout of the light emission area | region of the active matrix type organic electroluminescent panel which concerns on Embodiment 1 of this invention. It is a figure explaining the formation process of the organic layer using the vapor deposition mask which concerns on Embodiment 1 of this invention. It is a figure which shows the schematic cross section of the principal part of the pixel part of the active matrix organic electroluminescent panel which concerns on Embodiment 2 of this invention.

Explanation of symbols

10 glass substrate, 12 insulating layer, 14 semiconductor layer, 16 gate insulating film, 18 gate electrode, 20 interlayer insulating film, 22d drain electrode, 22s source electrode, 28 first planarizing insulating layer, 32 second planarizing insulating layer, 32a end cover part, 32b mask support part, 50 organic EL element, 52 pixel electrode (anode, lower individual electrode), 54 common electrode (cathode, upper electrode), 60 organic layer, 62 hole injection layer, 64 hole Transport layer, 66 Light emitting layer, 68 Electron transport layer, 70 Deposition mask.

Claims (6)

An organic electroluminescence device comprising a plurality of organic electroluminescent elements including an organic layer containing at least an organic luminescent material between a lower individual electrode and an upper electrode is a method of manufacturing an organic electroluminescent panel formed above a substrate,
Forming the lower individual electrode on the substrate for each pixel;
Laminating an insulating material on the lower individual electrode,
By patterning the insulating material, an end cover insulating layer that covers the peripheral end of the lower individual electrode, and an upper layer that is provided on the outer peripheral side of the end cover insulating layer and is thicker than the end cover insulating layer Forming an insulating layer,
The organic layer includes a plurality of organic layers, and the organic layer is terminated outside the boundary between the end cover insulating layer and the lower individual electrode and inside the formation region of the upper insulating layer. In addition, for each pixel, the size of each of the plurality of organic layers is formed so that the upper layer is smaller than the lower layer ,
The method of manufacturing an organic electroluminescent panel, wherein the upper electrode is formed so as to cover the organic layer. In the manufacturing method of the organic electroluminescent panel of Claim 1,
The organic layer includes at least a hole injection layer and an organic light emitting layer,
Forming the hole injection layer to terminate inside the formation region of the upper insulating layer;
A method of manufacturing an organic electroluminescent panel, wherein the organic light emitting layer is formed so as to terminate on the upper electrode side of the hole injection layer and inside the formation region of the upper insulating layer. An organic electroluminescent device comprising at least a hole injection layer and an organic light emitting layer as an organic layer between a lower individual electrode and an upper electrode, wherein a plurality of organic electroluminescent elements are formed above a substrate,
Forming the lower individual electrode on the substrate for each pixel;
Laminating an insulating material on the lower individual electrode,
By patterning the insulating material, an end cover insulating layer that covers the peripheral end of the lower individual electrode, and an upper layer that is provided on the outer peripheral side of the end cover insulating layer and is thicker than the end cover insulating layer Forming an insulating layer,
Forming the hole injection layer covering the lower individual electrode, the end cover insulating layer and the upper insulating layer;
The organic layer is composed of a plurality of organic layers, and the organic light emitting layer is located on the upper electrode side of the hole injection layer and outside the boundary with the lower individual electrode, and the formation region of the upper insulating layer For each pixel and the size of each of the plurality of organic layers is formed so that the upper layer is smaller than the lower layer ,
A method of manufacturing an organic electroluminescent panel, wherein the upper electrode is formed so as to cover the hole injection layer and the organic light emitting layer. In the manufacturing method of the organic electroluminescent panel of Claim 2 or Claim 3,
A charge transport layer is provided between one or both of the hole injection layer and the organic light emitting layer and / or the organic light emitting layer and the upper electrode, and the end cover insulating layer and the lower individual electrode. A method for manufacturing an organic electroluminescent panel, wherein the organic electroluminescent panel is formed for each pixel so as to terminate outside the boundary of the upper insulating layer and inside the formation region of the upper insulating layer. In the manufacturing method of the organic electroluminescent panel as described in any one of Claims 1-4,
The method of manufacturing an organic electroluminescent panel, wherein the end cover insulating layer and the upper insulating layer are formed by performing multistage exposure or gray tone exposure on the insulating material. In the manufacturing method of the organic electroluminescent panel as described in any one of Claims 1-5 ,
A method for manufacturing an organic electroluminescent panel, wherein a mask for forming the organic layer is supported on an upper surface of the upper insulating layer to form the organic layer.

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