CN1434551A - Method for preparing neodymium doped yttrium vanadate crystal waveguide laser by ion implantation - Google Patents
Method for preparing neodymium doped yttrium vanadate crystal waveguide laser by ion implantation Download PDFInfo
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- CN1434551A CN1434551A CN 03111917 CN03111917A CN1434551A CN 1434551 A CN1434551 A CN 1434551A CN 03111917 CN03111917 CN 03111917 CN 03111917 A CN03111917 A CN 03111917A CN 1434551 A CN1434551 A CN 1434551A
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Abstract
This invention relates to a method for preparation of crystal waveguide laser with ion implantation, mainly forming a plane and strip waveguide in Nd:YVO4 crystal and strip waveguide laser output, applying P ion implantation with energy power of 2.0-6.0 Mev, dose of 1X10 to the power 12 - 5X10 to the power 15 ions/cm2 to form plane light waveguide on Nd3+: YVO4 crystal surface or form a strip mask first, then to proceed with P ion implantation to form the Nd3+: YVO4 strip light waveguide to pump the plane or strip waveguide with a certain wavelength and power laser, to output infrared laser with the wavelength of about 1064nm after laser cavity coating to its end face.
Description
(1) technical field
The present invention relates to a kind of preparation method who prepares crystal waveguide laser, especially be adapted to the plane of neodymium ion doped yttrium vanadate crystal and the preparation of slab waveguide laser.Belong to the wave guide process method in the field of optoelectronic devices.
(2) background technology
Neodymium ion doped vanadic acid yttrium (Nd
3+: YVO
4) crystal is a kind of widely used laser crystal, can produce the laser that wavelength is 1064 nanometers (nm), has important use in optical communication.
Fiber waveguide is the primary element of integrated optics, is defined as the high refractive index medium zone of the micron dimension that the medium of low-refraction is surrounded.Owing to the total internal reflection of light beam, thereby be limited in propagating in the high refractive index medium in dielectric boundaries place low refractive index dielectric one side.Fiber waveguide can be with the energy constraint of light in very little zone, cross section.On the cross section vertical with direction of beam propagation, if light beam only suffers restraints in one direction and is guided, waveguide is exactly a planar optical waveguide; If all suffering restraints on the cross-sectional direction, waveguide is exactly a slab waveguide.Carry out pumping with the waveguide that the laser of certain condition is prepared laser material, will output waveguide laser.Compare with the body device, waveguide laser utilize optical waveguide structure the energy constraint of light beam in the very little waveguide in cross section, can effectively improve optical power density, thereby reduce the threshold power of laser, improve slope efficiency; In addition, waveguide laser also has compact conformation, stable high advantage, is beneficial to integrated.Waveguide laser is corresponding with waveguiding structure, also is divided into slab guide laser and slab waveguide laser.Form waveguiding structure on the laser crystal surface and and then realize that the method for laser output has ion-exchange, diffusion etc.Technical journal magazine " Electronics Letters " and " the IEEE Journal of Quantum " of the U.S. reported with particle exchanging technology respectively and prepared Nd:MgO:LiNbO nineteen ninety and 1991
3Waveguide laser (Electronics Letters26, (1990) 927, IEEE Journal of QuantumElectronics27 (1991) 618) etc.Their major defect is that the waveguide of preparation has relatively large influence to original crystalline nature, and applicable scope is limited, can only be fit to the crystal of exchange or diffusion (as LiNbO at some at present
3) go up to realize waveguide laser, and for as Nd:YVO
4And so on many crystal, ion-exchange or diffusion etc. just can't realize.
(3) summary of the invention
The invention provides a kind of method that in the waveguide of neodymium ion doped vanadic acid yttrium, realizes output waveguide laser.This method not only can realize the waveguide laser output on plane, is the needs of better adaptation signal optical fiber coupling, can also realize the waveguide laser output of bar shaped.
The present invention injects preparation neodymium doped yttrium vanadate crystal waveguide laser with ion, and the technical scheme that is adopted is: adopt ion to inject and realize Nd
3+: YVO
4The waveguiding structure of crystal.Adopt the phosphonium ion of energy (1.0～6.0 million-electron-volts (MeV)) to inject, implantation dosage is 1 * 10
12～5 * 10
15In ion/square centimeter scope, at Nd
3+: YVO
4Plane of crystal forms planar optical waveguide, and phosphonium ion can be monovalence attitude or divalent state or three valence states; Or utilize and do the bar shaped mask earlier, the method for injecting with phosphonium ion forms Nd again
3+: YVO
4The crystal strip optical waveguide.After Waveguide end face being carried out the plated film of felicity condition, the laser that utilizes certain wavelength and power is to Nd
3+: YVO
4Crystrallographic plane waveguide or slab waveguide carry out pumping, the infrared laser of exportable wavelength about 1064 nanometers (nm).Infrared laser is carried out two frequencys multiplication with frequency-doubling crystal such as KTP, can the green glow of output wavelength about 532nm.It can be plane that phosphonium ion injects the neodymium ion doped vanadic acid yttrium waveguide that forms, and also can be the structure of bar shaped.Implantation dosage injects than traditional ion that low (it is 1～6 * 10 that traditional He ion injects the dosage that forms fiber waveguide
16Ion/square centimeter).The employing phosphonium ion injects, and can cause the ordinary refraction index of injection region to raise, thereby form waveguiding structure.
The present invention injects the method for preparing neodymium doped yttrium vanadate crystal waveguide laser with ion and comprises: steps such as the injection of MeV phosphonium ion, thermal anneal process and laserresonator plated film.
The concrete technology making flow process of injecting preparation neodymium doped yttrium vanadate crystal waveguide laser with phosphonium ion is: at first to Nd
3+: YVO
4Crystal carries out carrying out optical polish and clean at upper surface and two end faces at least; Then utilizing accelerator to carry out phosphonium ion injects; Form fiber waveguide at ion implanted region, carry out thermal anneal process again; On two end faces, carry out laserresonator input plated film and laserresonator output plated film respectively according to the pumping light wavelength then; Just can obtain the output of waveguide laser at last by object lens or optical fiber coupling pump light.
Use phosphonium ion to inject, dosage is low, thereby cost is lower; Refraction index changing in the wave guide zone and waveguide mode can be by injecting ion dosage and energy or the annealing that different condition is carried out in waveguide regulated and controls.The output of waveguide laser can strengthen by the coupling of accuracy controlling coupled mode.
(4) description of drawings
Fig. 1 injects the making flow chart of preparation neodymium doped yttrium vanadate crystal waveguide laser for phosphonium ion of the present invention;
Fig. 2 injects the slab guide process schematic representation of neodymium doped yttrium vanadate crystal for phosphonium ion;
Fig. 3 produces schematic diagram for planar optical waveguide laser;
Fig. 4 injects the strip optical waveguide process schematic representation of neodymium doped yttrium vanadate crystal for phosphonium ion;
Fig. 5 produces schematic diagram for strip optical waveguide laser.
Among the figure: 1.Nd
3+: YVO
4Crystal, the 2.MeV phosphonium ion injects, 3. the planar optical waveguide of refractive index increase type, 4. laserresonator input plated film, 5. laserresonator output plated film, 6. object lens, 7. pump light, 8. polarizer, 9. waveguide laser, 10. photoresist mask, 11. slab waveguides, 12. the pump light of optical fiber coupling, the waveguide laser of 13. optical fiber coupling.
(5) embodiment embodiment 1: phosphonium ion injects the preparation of the slab guide laser of neodymium doped yttrium vanadate crystal
Slab guide manufacturing process: the Nd that x is cut
3+: YVO
4Crystal prototype (1), size is 5mm * 5mm * 2mm.The surface (polishing of 5mm * 5mm), with two vertical faces (5mm * 2mm) also polishing of y direction.The MeV phosphonium ion injects (2): the injection energy is that 2.8MeV, dosage are 1 * 10
14The P of ion/square centimeter
+Ion, it is the fiber waveguide (3) of 2.2 microns refractive index increase type that the surface has just formed thickness.As for carrying out thermal annealing in the air, condition is 260 ℃, 60 minutes with sample.
The plated film of Waveguide end face: (5mm * 2mm) needs plated film to two end faces of waveguide: the scope that laserresonator input plated film (4) and laserresonator output plated film (5), needs can the capped end ground roll be led.Logical light input direction plating 808nm full impregnated, the sull that 1064nm is all-trans or height is anti-, outbound course plating 808nm is all-trans or height is anti-, the sull of 1064nm partial reflection, to realize laserresonator.
The output of waveguide laser: producing wavelength with semiconductor laser is 808nm pump light (7), and the laser of laser output becomes the TM polarised light through polarizer (8) modulation, becomes directional light through collimater, is coupled into Nd through micro objective (6) again
3+: YVO
4The ducting layer of crystal carries out pumping, Nd
3+: YVO
4The ducting layer of crystal just can produce the laser that wavelength is 1064nm, is coupled out through object lens (6), just can export the waveguide laser (9) of 1064nm.Embodiment 2 phosphonium ions inject the preparation of the slab waveguide laser of neodymium doped yttrium vanadate crystal
The manufacturing process of strip optical waveguide: a slice Nd that x is cut
3+: YVO
4Sample (1), size is 5mm * 5mm * 2mm.The surface (polishing of 5mm * 5mm), with two vertical faces (5mm * 2mm) also polishing of y direction.Forming width with photoetching technique on the surface is 30 microns, is spaced apart the rectangle photoresist mask (10) of 9 microns projection, 3 microns of mask thickness.The MeV phosphonium ion injects (2): the injection energy is that 2.8MeV, dosage are 1 * 10
14The P of ion/square centimeter
+Ion, and then remove mask, just at Nd
3+: YVO
4Formed slab waveguide (11) in the crystal.As for carrying out thermal annealing in the air, condition is 260 ℃, 60 minutes with sample.
The plated film of Waveguide end face: (5mm * 2mm) needs plated film to two end faces of waveguide: the scope that laserresonator input plated film (4) and laserresonator output plated film (5), needs can the capped end ground roll be led.Logical light input direction plating 808nm full impregnated, the sull that 1064nm is all-trans or height is anti-, outbound course plating 808nm is all-trans or height is anti-, the sull of 1064nm partial reflection, to realize laserresonator.
The output of waveguide laser: by being the pump light (12) of the laser of 808nm with wavelength, at Nd as the optical fiber coupling
3+: YVO
4The ducting layer of crystal just can produce the laser that wavelength is 1064nm, and the wavelength of output is the waveguide laser (13) of the optical fiber coupling of 1064nm.
Claims (4)
1. one kind is injected the method prepare neodymium doped yttrium vanadate crystal waveguide laser with ion, comprise that the phosphonium ion that utilizes certain energy and dosage injects, form fiber waveguide on neodymium ion doped yttrium vanadate crystal surface, carry out thermal anneal process then, on the end face of crystal, carry out the laserresonator plated film, by the light source pumping, producing wavelength is the waveguide laser of 1064 nanometers.
2. described according to claim 1, it is characterized in that: inject with phosphonium ion, phosphonium ion is monovalence phosphonium ion (P
+) or divalence phosphonium ion (P
2+) or three valent phosphors ion (P
3+).
3. described according to claim 1, wherein said injection energy of ions scope is 1.0～6.0 million-electron-volts.
4. described according to claim 1, wherein said implantation dosage scope is 1 * 10
12-5 * 10
15Ion/square centimeter.
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|---|---|---|---|
| CN 03111917 CN1280959C (en) | 2003-03-04 | 2003-03-04 | Method for preparing neodymium doped yttrium vanadate crystal waveguide laser by ion implantation |
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| CN 03111917 CN1280959C (en) | 2003-03-04 | 2003-03-04 | Method for preparing neodymium doped yttrium vanadate crystal waveguide laser by ion implantation |
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| CN1280959C CN1280959C (en) | 2006-10-18 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006048918A1 (en) * | 2004-11-08 | 2006-05-11 | Carlo Gavazzi Space Spa | Integrated micro-interferometer and method of making the same |
| CN1316700C (en) * | 2003-08-22 | 2007-05-16 | 南京大学 | Nd2 YVO4 light waveguide film device on Sio2 Substrate and its prepn |
| CN101969170A (en) * | 2010-09-17 | 2011-02-09 | 山东大学 | Method for preparing erbium-doped yttrium aluminum garnet ceramic ridge waveguide laser device |
| CN101969171A (en) * | 2010-09-17 | 2011-02-09 | 山东大学 | Method for preparing ytterbium-doped yttrium aluminum garnet ceramic plane and strip waveguide laser devices |
| CN102005688A (en) * | 2010-09-17 | 2011-04-06 | 山东大学 | Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal |
| CN101712455B (en) * | 2009-12-04 | 2012-08-29 | 西安理工大学 | Method for directly chemically synthesizing rare-earth vanadium-doped yttrium phosphate nanocrystalline material |
-
2003
- 2003-03-04 CN CN 03111917 patent/CN1280959C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316700C (en) * | 2003-08-22 | 2007-05-16 | 南京大学 | Nd2 YVO4 light waveguide film device on Sio2 Substrate and its prepn |
| WO2006048918A1 (en) * | 2004-11-08 | 2006-05-11 | Carlo Gavazzi Space Spa | Integrated micro-interferometer and method of making the same |
| CN101712455B (en) * | 2009-12-04 | 2012-08-29 | 西安理工大学 | Method for directly chemically synthesizing rare-earth vanadium-doped yttrium phosphate nanocrystalline material |
| CN101969170A (en) * | 2010-09-17 | 2011-02-09 | 山东大学 | Method for preparing erbium-doped yttrium aluminum garnet ceramic ridge waveguide laser device |
| CN101969171A (en) * | 2010-09-17 | 2011-02-09 | 山东大学 | Method for preparing ytterbium-doped yttrium aluminum garnet ceramic plane and strip waveguide laser devices |
| CN102005688A (en) * | 2010-09-17 | 2011-04-06 | 山东大学 | Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal |
| CN101969170B (en) * | 2010-09-17 | 2012-02-22 | 山东大学 | Method for preparing erbium-doped yttrium aluminum garnet ceramic ridge waveguide laser device |
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| Publication number | Publication date |
|---|---|
| CN1280959C (en) | 2006-10-18 |
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