CN102005688A - Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal - Google Patents
Method for preparing slab waveguide laser device in neodymium-doped lutecium vanadate crystal Download PDFInfo
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- CN102005688A CN102005688A CN 201010284508 CN201010284508A CN102005688A CN 102005688 A CN102005688 A CN 102005688A CN 201010284508 CN201010284508 CN 201010284508 CN 201010284508 A CN201010284508 A CN 201010284508A CN 102005688 A CN102005688 A CN 102005688A
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Abstract
The invention relates to a method for preparing a slab waveguide laser device in a neodymium-doped lutecium vanadate crystal, belonging to the technical field of optoelectronic device preparation. The method mainly comprises the following steps of: forming a slab waveguide in the neodymium-doped lutecium vanadate crystal and realizing the laser output on the slab waveguide. A femtosecond laser the pulse repetition rate of which is 200 KHz, the energy of which is 2-17 millijoule/pulse and the write-in speed of which is 0.2-15mm/second is adopted to form the slab waveguide in the neodymium-doped lutecium vanadate crystal. After laser resonant cavity film coating is carried out on the end surface of the waveguide, a pumping laser is utilized to carry out pumping on the neodymium-doped lutecium vanadate slab waveguide to output an infrared laser the wave length of which is 1063+/-1 or 1340+/-1nm.
Description
Technical field
The present invention relates to a kind of method that in neodymium doping nd-doped lutetium vanadate, prepares the slab waveguide Laser Devices, belong to the opto-electronic device preparing technical field.
Background technology
Neodymium doping vanadic acid lutetium (Nd doped lutecium vanadate, or be abbreviated as Nd:LuVO
4) crystal is a kind of widely used gain medium, and very strong polarization absorption is arranged, big stimulated emission cross section, high absorption coefficient, broad absorption band, little to the dependence of pumping wavelength, laser threshold is low.Can produce the laser that wavelength is 1064 or 1340 nanometers, in laser processing, integrated optics, optical communication, have important use.Waveguide is the primary element of integrated optics, is defined as one with respect to week dimension medium, the high-refractive-index regions that refractive index is high.In waveguide, light beam is limited in propagating in the high refractive index medium owing to total reflection principle.Follow according to light in waveguide, restricted mode difference is divided into slab guide (limiting the propagation of light in one direction) and slab waveguide (propagation of restriction light on both direction).Adopt certain condition that pumping is carried out in the waveguide of gain medium material preparation, can output waveguide laser.Waveguiding structure can under the situation of low projectile energy, can reach high energy density, so the relative body material of the pumping threshold of waveguide laser is much lower with the energy constraint of light in very little zone, cross section.And the overlapping area of pump light and waveguide laser is big in waveguide, can reach very big pumping efficiency.In addition, the length of waveguide and the ratio of end face diameter are big, are beneficial to heat and distribute, and greatly reduce the thermal effect of waveguide laser.The preparation method of waveguide has a variety of, and for example ion injection, pulsed laser deposition, femtosecond laser write, diffusion etc.2005 and 2007 the technical journal magazine " Journal of Crystal Growth " and " Applied SurfaceScience " reported respectively with pulsed laser deposition technique and ion implantation technique and prepared Nd:LuVO
4Slab guide (Journalof Crystal Growth 281,426 (2005), Applied Surface Science 253,9311 (2007)) etc.The report that does not also have the slab waveguide preparation.The report that does not also have the waveguide laser aspect.
Summary of the invention
The invention provides a kind of with the 350fs femtosecond laser directly write on neodymium doping vanadic acid lutetium (below be abbreviated as Nd:LuVO
4) make slab waveguide in the crystal and realize the method for output waveguide laser.
1) will be axial two faces of c perpendicular to the neodymium nd-doped lutetium vanadate crystallographic axis that mixes, and polish, and the sample after the polishing is cleaned;
2) use femtosecond laser, see through arbitrary burnishing surface,, produce two stripe pitch and be 20 or 30 microns trace, between two traces, form slab waveguide along a or the b direction of principal axis calcination sample of crystal; Using the pulse repetition frequency of femtosecond laser is 200 KHz, and energy is the every pulses of 2～17 little Jiao, and writing speed is the femtosecond laser of 0.2～15 millimeter per second, and wavelength is 1047 nanometers, and pulse duration is 350 femtoseconds;
3) with two the end face polishings of crystal perpendicular to the slab waveguide direction;
4) plating laserresonator film on the end face of polishing forms bar shaped neodymium doping nd-doped lutetium vanadate waveguide laser device;
5) utilize the slab waveguide of light source pumping neodymium doping nd-doped lutetium vanadate, producing wavelength is the waveguide laser of 1063 ± 1 nanometers or 1340 ± 1 nanometers.
The use femtosecond laser writes, and cost is low, and arbitrariness is strong, the controllability height; The refraction index changing in the wave guide zone and the adjustment of waveguide mode can realize by energy, pulse and the writing speed of regulating femtosecond laser.The output of waveguide laser can strengthen by the coupling of accuracy controlling coupled mode.
Description of drawings
Fig. 1 is a process chart of the present invention;
Fig. 2 femtosecond laser is directly write the manufacture craft schematic diagram of preparation neodymium doping nd-doped lutetium vanadate waveguide;
Fig. 3 is the generation schematic diagram that neodymium doping nd-doped lutetium vanadate slab waveguide laser produces;
Among the figure: 1. femtosecond laser, 2. neodymium doping nd-doped lutetium vanadate, 3. slab waveguide, 4. laser writes trace, 5. pump light, 6. polarizer, 7. laserresonator input plated film, 8. laserresonator output plated film, 9. convex lens, 10. waveguide laser.
Embodiment
Embodiment 1: the method for preparing the slab waveguide Laser Devices in neodymium doping nd-doped lutetium vanadate
1) with two faces of vertical and neodymium doping nd-doped lutetium vanadate (2) crystalline axis direction (c axle), polishes, and the sample after the polishing is cleaned;
2) with femtosecond laser (1), see through arbitrary burnishing surface, along a direction of principal axis calcination sample of crystal, produce two stripe pitch and be 30 microns trace.Between two traces, form slab waveguide (3).Using the pulse repetition frequency of femtosecond laser (1) is 200 KHz, and energy is 8 little Jiao/pulses, and writing speed is the femtosecond laser of 1 mm/second, and wavelength is 1047 nanometers, and pulse duration is 350 femtoseconds.
3) with two the end face polishings of crystal perpendicular to the slab waveguide direction.
4) plating laserresonator film (7,8) on the end face of polishing.The requirement of logical light approach axis resonant cavity film is the light that light 99% sees through, wavelength is the 1055-1090 nanometer 99% reflection (7) of 790-810 nanometer for wavelength, the requirement of outbound course resonant cavity film forms bar shaped neodymium doping nd-doped lutetium vanadate waveguide laser device for wavelength is light 99% reflection of 790-810 nanometer, light 95% reflection (8) that wavelength is the 1055-1090 nanometer;
Producing centre wavelength with ti sapphire laser is the slab waveguide (3) of the continuous pump light of 808 nanometers (5) pumping neodymium doping nd-doped lutetium vanadate, and producing wavelength is the waveguide laser of 1063 ± 1 nanometers.
Embodiment 2: the method for preparing the slab waveguide Laser Devices in neodymium doping nd-doped lutetium vanadate
1) with two faces of vertical and neodymium doping nd-doped lutetium vanadate (2) crystalline axis direction (c axle), polishes, and the sample after the polishing is cleaned;
2) with femtosecond laser (1), see through arbitrary burnishing surface, along a direction of principal axis calcination sample of crystal, produce two stripe pitch and be 30 microns trace.Between two traces, form slab waveguide (3).Using the pulse repetition frequency of femtosecond laser (1) is 200 KHz, and energy is 9 little Jiao/pulses, and writing speed is the femtosecond laser of 2 mm/second, and wavelength is 1047 nanometers, and pulse duration is 350 femtoseconds.
3) with two the end face polishings of crystal perpendicular to the slab waveguide direction.
4) plating laserresonator film (7,8) on the end face of polishing.The requirement of logical light approach axis resonant cavity film is the light that light 99% sees through, wavelength is the 1330-1350 nanometer 99% reflection (7) of 790-810 nanometer for wavelength, the requirement of outbound course resonant cavity film forms bar shaped neodymium doping nd-doped lutetium vanadate waveguide laser device for wavelength is light 99% reflection of 790-810 nanometer, light 95% reflection (8) that wavelength is the 1330-1350 nanometer;
5) producing centre wavelength with ti sapphire laser is the waveguide (3) of the continuous pump light of 808 nanometers (5) pumping neodymium doping nd-doped lutetium vanadate, and producing wavelength is the waveguide laser of 1340 ± 1 nanometers.
Claims (2)
1. method for preparing the slab waveguide Laser Devices in neodymium doping nd-doped lutetium vanadate is characterized in that the preparation method is as follows:
1) will be axial two faces of c perpendicular to the neodymium nd-doped lutetium vanadate crystallographic axis that mixes, and polish, and the sample after the polishing is cleaned;
2) use femtosecond laser, see through arbitrary burnishing surface,, produce two stripe pitch and be 20 or 30 microns trace, between two traces, form slab waveguide along a or the b direction of principal axis calcination sample of crystal;
3) with two the end face polishings of crystal perpendicular to the slab waveguide direction;
4) plating laserresonator film on the end face of polishing forms bar shaped neodymium doping nd-doped lutetium vanadate waveguide laser device;
5) utilize the slab waveguide of light source pumping neodymium doping nd-doped lutetium vanadate, producing wavelength is the waveguide laser of 1063 ± 1 nanometers or 1340 ± 1 nanometers.
2. according to the described method that in neodymium doping nd-doped lutetium vanadate, prepares the slab waveguide Laser Devices of claim 1, it is characterized in that: the pulse duration of described femtosecond laser is 350 femtoseconds, pulse repetition frequency is 200 KHz, energy is the every pulses of 2～17 little Jiao, writing speed is 0.2～15 millimeter per second, and wavelength is 1047 nanometers.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104767106A (en) * | 2015-04-17 | 2015-07-08 | 山东大学 | Erbium doped yttrium aluminum garnet crystal inlaid optical waveguide amplifier and manufacturing method thereof |
| CN104792730A (en) * | 2015-04-17 | 2015-07-22 | 山东大学 | Blood sugar concentration detector based on optical waveguide laser structure as well as manufacturing method and application of blood sugar concentration detector |
| CN106526747A (en) * | 2016-12-15 | 2017-03-22 | 山东师范大学 | Method for manufacturing titanium sapphire waveguide type beam splitter |
| CN107046223A (en) * | 2016-12-30 | 2017-08-15 | 中国科学院西安光学精密机械研究所 | A kind of turning locked mode waveguide laser |
| CN109755849A (en) * | 2019-02-14 | 2019-05-14 | 聊城大学 | A kind of preparation method of " surface launching " waveguide laser resonant cavity |
Citations (5)
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| CN1365500A (en) * | 1999-07-29 | 2002-08-21 | 康宁股份有限公司 | Direct writing of optical device in silica-based glass using femtosecond pulse lasers |
| CN1434551A (en) * | 2003-03-04 | 2003-08-06 | 山东大学 | Method for preparing neodymium doped yttrium vanadate crystal waveguide laser by ion implantation |
| CN1487636A (en) * | 2003-08-22 | 2004-04-07 | 南京大学 | Nd2 YVO4 light waveguide film device on Sio2 Substrate and its prepn |
| JP2005292718A (en) * | 2004-04-05 | 2005-10-20 | Furukawa Electric Co Ltd:The | Optical waveguide, optical waveguide module, and method of fabricating optical waveguide |
| CN101101356A (en) * | 2007-07-25 | 2008-01-09 | 中国科学院上海光学精密机械研究所 | Method for preparing microfluid optical waveguide on glass substrate using femtosecond laser |
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2010
- 2010-09-17 CN CN 201010284508 patent/CN102005688A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1365500A (en) * | 1999-07-29 | 2002-08-21 | 康宁股份有限公司 | Direct writing of optical device in silica-based glass using femtosecond pulse lasers |
| CN1434551A (en) * | 2003-03-04 | 2003-08-06 | 山东大学 | Method for preparing neodymium doped yttrium vanadate crystal waveguide laser by ion implantation |
| CN1487636A (en) * | 2003-08-22 | 2004-04-07 | 南京大学 | Nd2 YVO4 light waveguide film device on Sio2 Substrate and its prepn |
| JP2005292718A (en) * | 2004-04-05 | 2005-10-20 | Furukawa Electric Co Ltd:The | Optical waveguide, optical waveguide module, and method of fabricating optical waveguide |
| CN101101356A (en) * | 2007-07-25 | 2008-01-09 | 中国科学院上海光学精密机械研究所 | Method for preparing microfluid optical waveguide on glass substrate using femtosecond laser |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104767106A (en) * | 2015-04-17 | 2015-07-08 | 山东大学 | Erbium doped yttrium aluminum garnet crystal inlaid optical waveguide amplifier and manufacturing method thereof |
| CN104792730A (en) * | 2015-04-17 | 2015-07-22 | 山东大学 | Blood sugar concentration detector based on optical waveguide laser structure as well as manufacturing method and application of blood sugar concentration detector |
| CN106526747A (en) * | 2016-12-15 | 2017-03-22 | 山东师范大学 | Method for manufacturing titanium sapphire waveguide type beam splitter |
| CN107046223A (en) * | 2016-12-30 | 2017-08-15 | 中国科学院西安光学精密机械研究所 | A kind of turning locked mode waveguide laser |
| CN109755849A (en) * | 2019-02-14 | 2019-05-14 | 聊城大学 | A kind of preparation method of " surface launching " waveguide laser resonant cavity |
| CN109755849B (en) * | 2019-02-14 | 2020-09-01 | 聊城大学 | Method for preparing resonant cavity of surface-emitting waveguide laser |
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Open date: 20110406 |