CN1391265A - Process for removing antireflecting inorganic layer - Google Patents
Process for removing antireflecting inorganic layer Download PDFInfo
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- CN1391265A CN1391265A CN 02136119 CN02136119A CN1391265A CN 1391265 A CN1391265 A CN 1391265A CN 02136119 CN02136119 CN 02136119 CN 02136119 A CN02136119 A CN 02136119A CN 1391265 A CN1391265 A CN 1391265A
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- sti
- hdp
- inorganic layer
- etching
- photoetching
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Abstract
A process for removing anti-reflecting inorganic layer by etching with inverse plate features that an additional STI inverse-plate etching is performed after HDP deposition to remove the HDP and silicate oxynitride in active region to stop etching on silicon nitride. Its advantages are smooth surface of silicon die, short CMP time, and high CMP uniformity.
Description
Technical field
The invention belongs to the semiconductor fabrication process technical field, be specifically related to a kind of removal method of photoetching antireflecting inorganic layer.
Technical background
Silicon oxynitride, improves the wide control of bar and is subjected to the extensive welcome of photoetching process because of effectively suppressing the substrate reflection as the antireflecting inorganic layer of photoetching.But when silicon oxynitride when being applied to STI (Shallow Trench Isolation, shallow-trench isolation) photoetching since under be silicon nitride, can not remove with the phosphoric acid wet method in the back of removing photoresist.Existing method is at STI (Shallow TrenchIsolation, shallow-trench isolation) HDP (High Density Plasma, high-density plasma, a kind of chemical vapor deposition method, also referring to the silicon dioxide of growing in this way) back is with CMP (Chemical Mechanical Polish, chemico-mechanical polishing) directly grinding, not only need to prolong significantly the time of STI CMP, also uniformity and the process window to STI CMP has negative effect, consequently the technology cost improves, the technology controlling and process variation, thus the application of silicon oxynitride in the STI photoetching restricted.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, propose a kind ofly to shorten the STI CMP time, overcome the method for silicon oxynitride the removal photoetching antireflecting inorganic layer of STI CMP influence.
To achieve these goals, the technical solution used in the present invention is to remove antireflecting inorganic layer, for example silicon oxynitride or carborundum by anti-carving etching off.Its method is: increase the photoetching of an anti-version of STI in HDP deposit (this step is positioned at the STI shallow slot and forms the back) back, remove the HDP and the silicon oxynitride in active area zone by the method for dry etching, etching is ended on the silicon nitride.
The method of the removal antireflecting inorganic layer that the present invention proposes, its concrete technological process is as follows: the first step: silicon chip; Second step: silicon nitride deposition; The 3rd step: silicon oxynitride deposit; The 4th step: STI photoetching; The 5th step: STI etching; The 6th step: remove photoresist; The 7th step: oxidation; The 8th step: HDP deposit; The photoetching of the anti-version of the 9th step: STI; The tenth anti-carving erosion of step: STI (remove HDP and silicon oxynitride, be parked on the silicon nitride); The 11 step: remove photoresist; The 12 step: STI CMP.
The present invention adopts anti-carving etching off to remove antireflecting inorganic layer, not only can successfully the silicon oxynitride in active area zone effectively be removed, more owing to removed the HDP in active area zone simultaneously, played the effect of silicon chip surface being carried out planarization, shortened the CMP time, improved uniformity, for STI CMP provides good condition.For CMP, in addition also more favourable than the common process of no silicon oxynitride; For photoetching, can give full play to the good antireflection effect of silicon oxynitride, strengthen the wide control of photoetching bar.
Description of drawings
Fig. 1 is the prior art profile, and its technological process is: (a) first step: silicon chip; Second step: silicon nitride deposition; The 3rd step: silicon oxynitride deposit; (b) the 4th step: STI photoetching; (c) the 5th step: STI etching; The 6th step: remove photoresist; (d) the 7th step: oxidation; The 8th step: HDP deposit; (e) the 9th step: STI CMP.
Fig. 2 is the technology of the present invention profile, and its technological process is: (a) first step: silicon chip; Second step: silicon nitride deposition; The 3rd step: silicon oxynitride deposit; (b) the 4th step: STI photoetching; (c) the 5th step: STI etching; The 6th step: remove photoresist; (d) the 7th step: oxidation; The 8th step: HDP deposit; (e) the anti-version of the 9th step: STI photoetching; (f) the tenth anti-carving erosion of step: STI (remove HDP and silicon oxynitride, be parked on the silicon nitride); The 11 step: remove photoresist; (g) the 12 step: STI CMP.
Drawing reference numeral: 1 is that silicon oxynitride, 2 is that silicon nitride, 3 is that silicon dioxide, 4 is that silicon substrate, 5 is that photoresist, 6 is HDP.
Embodiment
Referring to Fig. 2, on the basis of prior art processes flow process, increase once anti-carving erosion, the position is after the HDP deposit.Reticle is the anti-version of STI, i.e. exposure area during STI photoetching is masked this moment, and masked zone is exposed this moment during the STI photoetching.Etching adopts dry etching, is parked on the silicon nitride.For guaranteeing that silicon oxynitride all can add necessary excessive erosion to the greatest extent quarter, promptly eats up a part of silicon nitride.Because silicon nitride is higher than very with respect to the selection of HDP during CMP, needn't worry not have the grinding of enough nitride masking HDP.
Owing to before CMP, just silicon oxynitride is removed, avoided the negative effect of silicon oxynitride to CMP, solved the problem that photoetching and CMP can not make the best of both worlds in the prior art.Owing to before the denitrification silica, removed the HDP on the place, not only make also to make the HDP reduced thickness for the treatment of CMP silicon chip surface more smooth, thereby shortened the CMP time again, improved the CMP uniformity.
Claims (3)
1, a kind of photoetching antireflecting inorganic layer removal method is characterized in that removing antireflecting inorganic layer by anti-carving etching off.
2, method according to claim 1 is characterized in that increasing the photoetching of an anti-version of STI after the HDP deposit, remove the HDP and the silicon oxynitride in active area zone by the method for dry etching, and make etching stopping on silicon nitride.
3, method according to claim 1 is characterized in that above-mentioned antireflecting inorganic layer is silicon oxynitride or carborundum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02136119 CN1218371C (en) | 2002-07-19 | 2002-07-19 | Process for removing antireflecting inorganic layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02136119 CN1218371C (en) | 2002-07-19 | 2002-07-19 | Process for removing antireflecting inorganic layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1391265A true CN1391265A (en) | 2003-01-15 |
| CN1218371C CN1218371C (en) | 2005-09-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02136119 Expired - Fee Related CN1218371C (en) | 2002-07-19 | 2002-07-19 | Process for removing antireflecting inorganic layer |
Country Status (1)
| Country | Link |
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| CN (1) | CN1218371C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101238586B (en) * | 2005-08-10 | 2010-05-19 | 法国原子能委员会 | Antireflection coating, particularly for solar cells, and method for producing this coating |
| CN105097491A (en) * | 2014-04-30 | 2015-11-25 | 无锡华润上华科技有限公司 | Chemical mechanical polishing technology based on silicon oxynitride antireflection layer |
-
2002
- 2002-07-19 CN CN 02136119 patent/CN1218371C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101238586B (en) * | 2005-08-10 | 2010-05-19 | 法国原子能委员会 | Antireflection coating, particularly for solar cells, and method for producing this coating |
| CN105097491A (en) * | 2014-04-30 | 2015-11-25 | 无锡华润上华科技有限公司 | Chemical mechanical polishing technology based on silicon oxynitride antireflection layer |
| CN105097491B (en) * | 2014-04-30 | 2018-09-21 | 无锡华润上华科技有限公司 | A kind of CMP process based on silicon oxynitride anti-reflective layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1218371C (en) | 2005-09-07 |
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Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; SHANGHAI IC R Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
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Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Co-patentee after: Shanghai integrated circuit research and Development Center Co., Ltd. Patentee after: Shanghai Huahong (Group) Co., Ltd. Address before: 200020 No. 918 Huaihai Road, Shanghai, No. 18 Patentee before: Shanghai Huahong (Group) Co., Ltd. |
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