CN1381871A - 高反差比膜片掩膜 - Google Patents
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Abstract
一种膜片掩膜,用于电子束平版印刷或X射线平版印刷,它具有形成于硅晶片上的膜片薄膜,以及形成于膜片薄膜上的掩膜主体图样。膜片薄膜具有在部分掩膜主体下面、不同于掩膜主体图样开孔的重金属注入区。注入区域在由膜片掩膜所得图样中实现更高的反差比。
Description
本发明涉及高反差比膜片掩膜,具体地说,涉及一种膜片掩膜,用于电子束平版印刷或X射线平版印刷。本发明还涉及一种制成这种膜片掩膜的方法。
一种膜片掩膜,在制作半导体器件的生产过程中用于电子束平版印刷和X射线平版印刷。这种膜片掩膜一般包含掩膜主体图样,用作散射电子束的散射膜和吸收X射线的吸收膜,还包含用于支撑掩膜主体图样的膜片掩膜,以及用于支撑膜片掩膜的硅基板。
下面先参照图1A至1C叙述制成膜片掩膜的常规技术。利用CVD技术在硅晶片41上沉积3μm厚的氮化硼膜42,随之利用高频溅射技术再在其上沉积一层钨膜43,如图1A所示。钨膜43的厚度为1.5μm左右,具有包含α相和β相的混合相结晶结构。
随后再如图1B所示,通过旋转涂敷,在其上加一层阻挡膜层44,用于电子束曝光,随之通过电子束45曝光,将所需的图样写在阻挡膜层44上。
此后如图1C所示,使阻挡膜层44显影,制成具有所需图样的电子束掩膜。然后再如图1D所示,用阻挡膜层44作为掩膜,使钨膜43经活性离子的蚀刻(RIE)过程,得到具有所需图样的膜片掩膜。
在上述常规过程中,众所周知,包含α相和β相的钨膜43混合相结晶结构提供比较小的钨膜43内应力。即使为了实现较高的反差比而使膜片掩膜的厚度较大,这种较小的内应力使膜片掩膜的掩膜图样变形较小。
近来,考虑到半导体器件精细设计标准的快速发展,要求膜片掩膜具有较高的制图精度,以及较高的位置精度。众所周知的是,由于钨膜公知的重金属特有特性,钨膜具有较大的内应力。这种较大的内应力引起膜的变形,从而阻碍了制图的精度,并引致膜片掩膜的剥离。通过加大作为电子束散射膜或X射线吸收膜之钨膜的厚度,可达到制图的精度或避免所述剥离。
然而,掩膜主体图样的厚度较大,增大了掩膜主体图样的纵横尺寸比,这降低了掩膜主体膜层的制图精度。一般由膜厚与掩膜上图样宽度的比率确定所述的纵横尺寸比。
按照图1A至1D所示的常规技术,包含α相和β相的钨膜43混合相结晶结构可以减小膜的应力,从而可减小掩膜主体的厚度。不过,膜片掩膜所需的特定反差比阻碍了膜厚度的减小。因而,按所述的常规技术不能达到掩膜的制图精度。
基于上述,本发明的目的在于提供一种厚度较小的膜片掩膜,而不降低反差比,因而达到更高的制图精度。
本发明的另一目的在于提供一种制成这种膜片掩膜的方法。
本发明提供一种膜片掩膜,它包括晶片、包含第一种材料并受所述晶片支撑的膜片薄膜,以及覆盖所述膜片薄膜的掩膜主体;所述掩膜主体具有包含开孔的掩膜图样;所述膜片薄膜具有在所述掩膜主体下面、不同于所述开孔的第一区域,该第一区域是通过另加入原子数高于第一种材料之原子数的原子而形成。
本发明还提供一种制作膜片掩膜的方法,包括如下步骤:形成支撑于晶片上的膜片薄膜;在膜片薄膜上形成阻挡掩膜;利用所述阻挡掩膜选择原子注入所述膜片薄膜中,形成注入区域,所述原子的原子数高于所述膜片薄膜中所含材料的原子数;在包含所述注入区域之膜片薄膜上形成掩膜主体薄膜;以及对掩膜主体薄膜制图,以便具有包括不同于所述注入区域、暴露膜片薄膜之开孔的图样。
按照本发明的膜片掩膜和由本发明方法制成的膜片掩膜,包含较高原子数之原子的注入区域具有电子束散射或X射线吸收的功能,从而对掩膜主体有所帮助。因而,注入区域提高了由掩膜主体图样所得最终图样的反差比,而不会增加掩膜主体的厚度。
从以下参照附图的详细描述,将使上述及其它目的、特征和优点愈为清晰,其中:
图1A至1D是常规膜片掩膜的截面图,一般性地示出它的制作步骤;
图2是本发明一种具体实施例膜片掩膜的截面图;
图3A至3F是图2膜片掩膜的截面图,一般性地示出它的制作过程的步骤;
图4A至4F是图2膜片掩膜的截面图,一般性地示出它的另一制作过程的步骤。
参照图2,本发明一种膜片掩膜包括硅晶片11、由原子数较低之第一种材料注入并在晶片上形成的膜片薄膜12,以及由原子数较高之第二种材料注入并在膜片薄膜12上形成的掩膜主体图样13。
除掩膜主体图样13中的开孔外,膜片薄膜12在掩膜主体图样13的底部具有注入区域14。通过将原子数高于第一种材料之原子数的重原子注入或加入膜片薄膜12中,形成注入区域14。注入区域14中的重原子具有与掩膜主体图样13相关联的散射电子束或吸收X射线的功能。膜片薄膜12区域不同于注入区域14,由于其中没有重原子,所以它具有固有的适当透过电子束或X射线的功能。
膜片薄膜12中第一种材料的举例包括氮化硅(SiN)、碳化硅(SiC)、氮化硼(BN)、金刚石等。膜片薄膜12的注入区域14中的重原子最好选自重金属,选自元素周期表中第六周期和其后各周期所列各重金属尤好。重金属的举例包括钨(W)、钽(Ta)、金(Au)、铂(Pt)、铅(Pb)等。注入的重原子可包括多种重金属。
掩膜主体图样13的材料最好选自重金属或者重合金,如W、Ta、TaGe、TaReGe。掩膜主体图样13最好包括元素周期表中第六周期和其后各周期所列的一种或多种重金属。
参照图3A至3F,它们表示制作本发明一种实施例膜片掩膜的制作过程。这种膜片掩膜被用于比如电子束平版印刷。图3A中采用LPCVD(低压化学汽相沉积)技术将一层氮化硅(SiN)膜22沉积在直径200mm之硅晶片21的顶面上,其厚度达100nm(纳米)。应予说明的是,氮化硅膜22的厚度最好等于或小于150nm。
接下去,给氮化硅膜22旋转涂敷以树脂,在其上形成树脂薄膜,随之,采用电子束平版印刷技术在其上制图,形成树脂图样23,如图3B所示。树脂图样23内有多个开孔,孔中为用于散射电子束的注入区域。
这之后,以树脂图样23为掩膜,将诸如钨离子或铬离子注入氮化硅膜22中,从而形成重金属注入区24。然后除去树脂图样23,如图3C所示。
利用溅射或LPCVD技术,使钨膜25沉积在包含重金属注入区24的氮化硅膜22上,达到厚度约为10nm,如图3D所示。应予说明的是,钨膜25的厚度最好等于或小于20nm。
继而,以树脂旋转涂敷钨膜25,在其上形成树脂膜,随之通过对其进行电子束平版印刷,形成树脂图样。然后利用散射树脂图样,通过干法蚀刻技术,在钨膜25下面以选择的方式进行蚀刻,如图3E所示。
这之后,在硅晶片21的底面上形成掩膜图样,随之用氢氧化钾(KOH)为蚀刻剂并用氮化硅膜22作为蚀刻档板,通过湿法蚀刻技术,对硅晶片21实行各向异性的深蚀刻。于是,形成氮化硅膜22,作为具有注入区24的膜片薄膜,如图3F所示。可用干法蚀刻步骤代替所述湿法蚀刻步骤。
参照图4A至4F,示出另一实施例制作图2之膜片掩膜的另一种制作过程。这种膜片掩膜被用于比如电子束平版印刷。利用LPCVD技术,在直径为200mm之硅晶片31的顶面上沉积厚度达130nm的氮化硅膜32。然后,在硅晶片31的底面上形成具有指定开孔的掩膜,随之利用KOH为蚀刻剂,通过湿法蚀刻技术对硅晶片31实行深蚀刻,从而剩下在氮化硅膜32下面、厚度为0.1至1mm的硅晶片31薄膜,如图4A所示。
然后,再以树脂旋转涂敷氮化硅膜32,在其上形成树脂薄膜,随之对其制图,形成树脂图样33,如图4B所示。接下去,用树脂图样33为掩膜,将钨离子要选择的方式注入氮化硅膜32中,形成重金属注入区34。然后,除去树脂图样33,如图4C所示。可颠倒所述步骤的次序,使得在注入钨离子之后,引入所述硅晶片31深蚀刻的步骤。
这之后,将钨溅射于包含重金属注入区34的氮化硅膜32上,从而形成厚度为15nm的钨膜35,如图4D所示。使钨膜35经受电子束平版印刷制图,从而使部分钨膜35留在重金属注入区34上,如图4E所示。
接下去,通过深蚀刻除去硅晶片31的剩余薄膜31a,从而将氮化硅膜32处理成为膜片薄膜,如图4F所示。最后的深蚀刻步骤可以是各向同性的蚀刻步骤,其中并非必须使用蚀刻掩膜。
在第一种制作过程中,存在一种可能性,即由于在硅晶片的深蚀刻之后,由膜片薄膜加给的拉应力可使硅晶片受到变形。另一方面,在第二种制作过程中,在形成掩膜主体的薄膜之前,已将膜片薄膜的拉应力除去到某种程度。在这种过程中,可以减轻硅晶片的深蚀刻之后的硅晶片变形,从而膜片掩膜具有较少的变形。
由于只作为举例描述了上面的实施例,本发明并不限于上述各实施例,可由那些熟悉本领域的人员很容易地做出各种改型或替换,而不致脱离本发明的范围。
例如,可在掩膜主体薄膜沉积之前引入硅晶片的深蚀刻,比如在重金属离子注入之前或之后。另外,本发明的膜片掩膜可用于X射线平版印刷和离子束平版印刷,以及电子束平版印刷。
Claims (12)
1.一种膜片掩膜,它包括晶片、包含第一种材料并受所述晶片支撑的膜片薄膜,以及覆盖所述膜片薄膜的掩膜主体;所述掩膜主体具有包含开孔的掩膜图样;所述膜片薄膜具有在所述掩膜主体下面、不同于所述开孔的第一区域,所述第一区域是通过另加入原子数高于所述第一种材料之原子数的原子而形成。
2.如权利要求1所述膜片掩膜,其特征在于,所述第一种材料选自一组氮化硅、碳化硅、氮化硼和金刚石中。
3.如权利要求1所述膜片掩膜,其特征在于,所述原子包括重金属。
4.如权利要求3所述膜片掩膜,其特征在于,所述重金属是元素周期表中第六周期和其后各周期之一所列出的。
5.如权利要求1所述膜片掩膜,其特征在于,所述掩膜主体的厚度等于或小于20nm。
6.如权利要求1所述膜片掩膜,其特征在于,所述膜片掩膜的厚度等于或小于150nm。
7.一种制作膜片掩膜的方法,包括如下步骤:形成支撑于晶片上的膜片薄膜;在所述膜片薄膜上形成阻挡掩膜;利用所述阻挡掩膜选择原子注入所述膜片薄膜中,形成注入区域,所述原子的原子数高于所述膜片薄膜中所含材料的原子数;在包含所述注入区域之膜片薄膜上形成掩膜主体薄膜;对掩膜主体薄膜制图,以便具有包括不同于所述注入区域、暴露所述膜片薄膜之开孔的图样。
8.如权利要求7所述的方法,其特征在于,还包括在所述制图步骤之后,在所述晶片底面蚀刻所述晶片,露出所述膜片薄膜的步骤。
9.如权利要求7所述的方法,其特征在于,还包括在所述膜片薄膜形成步骤与所述树脂掩膜形成步骤之间,在所述晶片底面蚀刻所述晶片,露出所述膜片薄膜的步骤。
10.如权利要求7所述的方法,其特征在于,还包括在所述选择地注入步骤与所述掩膜主体形成步骤之间,在所述晶片底面蚀刻所述晶片,露出所述膜片薄膜的步骤。
11.如权利要求7所述的方法,其特征在于,还包括以下步骤:在所述膜片薄膜形成步骤与所述树脂掩膜形成步骤之间,蚀刻所述晶片底面,使所述膜片薄膜不被露出的步骤;以及在所述掩膜主体薄膜制图步骤之后,蚀刻所述晶片的剩余部分,露出所述膜片薄膜的步骤。
12.如权利要求7所述的方法,其特征在于,还包括以下步骤:在所述选择地注入步骤与所述掩膜主体薄膜形成步骤之间,蚀刻所述晶片底面,使所述膜片薄膜不被露出的步骤;以及在所述掩膜主体薄膜制图步骤之后,蚀刻所述晶片的剩余部分,露出所述膜片薄膜的步骤。
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DE3529966C1 (de) * | 1985-08-22 | 1987-01-15 | Kernforschungsz Karlsruhe | Verfahren zur Herstellung von Masken fuer die Roentgentiefenlithographie |
JPH02264420A (ja) * | 1989-04-04 | 1990-10-29 | Fujitsu Ltd | X線露光マスク |
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US5942760A (en) * | 1997-11-03 | 1999-08-24 | Motorola Inc. | Method of forming a semiconductor device utilizing scalpel mask, and mask therefor |
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