CN1373522A - 一种镀有金属反射镜膜基板的发光二极管及其制造方法 - Google Patents
一种镀有金属反射镜膜基板的发光二极管及其制造方法 Download PDFInfo
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- CN1373522A CN1373522A CN01109370A CN01109370A CN1373522A CN 1373522 A CN1373522 A CN 1373522A CN 01109370 A CN01109370 A CN 01109370A CN 01109370 A CN01109370 A CN 01109370A CN 1373522 A CN1373522 A CN 1373522A
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CNB011093706A CN1185720C (zh) | 2001-03-05 | 2001-03-05 | 一种镀有金属反射镜膜基板的发光二极管及其制造方法 |
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CNB011093706A CN1185720C (zh) | 2001-03-05 | 2001-03-05 | 一种镀有金属反射镜膜基板的发光二极管及其制造方法 |
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CN1373522A true CN1373522A (zh) | 2002-10-09 |
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100379042C (zh) * | 2005-02-18 | 2008-04-02 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯的基底结构体及制造基底结构体的方法 |
CN100380695C (zh) * | 2005-03-03 | 2008-04-09 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯及其制造方法 |
US7763477B2 (en) | 2004-03-15 | 2010-07-27 | Tinggi Technologies Pte Limited | Fabrication of semiconductor devices |
US8004001B2 (en) | 2005-09-29 | 2011-08-23 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices for light emission |
US8034643B2 (en) | 2003-09-19 | 2011-10-11 | Tinggi Technologies Private Limited | Method for fabrication of a semiconductor device |
US8067269B2 (en) | 2005-10-19 | 2011-11-29 | Tinggi Technologies Private Limted | Method for fabricating at least one transistor |
US8124994B2 (en) | 2006-09-04 | 2012-02-28 | Tinggi Technologies Private Limited | Electrical current distribution in light emitting devices |
CN102544333A (zh) * | 2004-03-29 | 2012-07-04 | 克里公司 | 包括在其中具有光学元件的柔性膜的半导体发光器件及其装配方法 |
US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
US8329556B2 (en) | 2005-12-20 | 2012-12-11 | Tinggi Technologies Private Limited | Localized annealing during semiconductor device fabrication |
US8395167B2 (en) | 2006-08-16 | 2013-03-12 | Tinggi Technologies Private Limited | External light efficiency of light emitting diodes |
US8399906B2 (en) | 2010-05-04 | 2013-03-19 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereof |
CN102082216B (zh) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
CN101465397B (zh) * | 2007-12-20 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
CN107046089A (zh) * | 2016-02-05 | 2017-08-15 | 深圳市斯迈得半导体有限公司 | 一种防硫化和卤化且具有抗氧化功能的倒装封led光源 |
CN107369705A (zh) * | 2017-07-06 | 2017-11-21 | 西安交通大学 | 一种GaAs半导体表面欧姆接触电极及其制作方法 |
CN107845718A (zh) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | 一种基材选取灵活的新型结构的led光源的制作方法 |
CN107845705A (zh) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | 基材通过真空溅射技术制造的新型led光源的制造方法 |
CN110767781A (zh) * | 2019-11-18 | 2020-02-07 | 国网安徽省电力有限公司南陵县供电公司 | 一种高亮度发光二极管及其制造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100372137C (zh) * | 2005-05-27 | 2008-02-27 | 晶能光电(江西)有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
-
2001
- 2001-03-05 CN CNB011093706A patent/CN1185720C/zh not_active Expired - Lifetime
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8034643B2 (en) | 2003-09-19 | 2011-10-11 | Tinggi Technologies Private Limited | Method for fabrication of a semiconductor device |
US7763477B2 (en) | 2004-03-15 | 2010-07-27 | Tinggi Technologies Pte Limited | Fabrication of semiconductor devices |
CN102544333A (zh) * | 2004-03-29 | 2012-07-04 | 克里公司 | 包括在其中具有光学元件的柔性膜的半导体发光器件及其装配方法 |
US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
CN1998094B (zh) * | 2004-04-07 | 2012-12-26 | 霆激技术有限公司 | 半导体发光二极管上的反射层的制造 |
CN100379042C (zh) * | 2005-02-18 | 2008-04-02 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯的基底结构体及制造基底结构体的方法 |
CN100380695C (zh) * | 2005-03-03 | 2008-04-09 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯及其制造方法 |
US8004001B2 (en) | 2005-09-29 | 2011-08-23 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices for light emission |
US8067269B2 (en) | 2005-10-19 | 2011-11-29 | Tinggi Technologies Private Limted | Method for fabricating at least one transistor |
US8329556B2 (en) | 2005-12-20 | 2012-12-11 | Tinggi Technologies Private Limited | Localized annealing during semiconductor device fabrication |
US8395167B2 (en) | 2006-08-16 | 2013-03-12 | Tinggi Technologies Private Limited | External light efficiency of light emitting diodes |
US8124994B2 (en) | 2006-09-04 | 2012-02-28 | Tinggi Technologies Private Limited | Electrical current distribution in light emitting devices |
CN101465397B (zh) * | 2007-12-20 | 2013-07-03 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
CN102082216B (zh) * | 2009-11-26 | 2013-04-24 | 上海蓝光科技有限公司 | 一种发光二极管芯片及其制造方法 |
US8399906B2 (en) | 2010-05-04 | 2013-03-19 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereof |
CN107046089A (zh) * | 2016-02-05 | 2017-08-15 | 深圳市斯迈得半导体有限公司 | 一种防硫化和卤化且具有抗氧化功能的倒装封led光源 |
CN107845718A (zh) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | 一种基材选取灵活的新型结构的led光源的制作方法 |
CN107845705A (zh) * | 2016-09-18 | 2018-03-27 | 深圳市斯迈得半导体有限公司 | 基材通过真空溅射技术制造的新型led光源的制造方法 |
CN107369705A (zh) * | 2017-07-06 | 2017-11-21 | 西安交通大学 | 一种GaAs半导体表面欧姆接触电极及其制作方法 |
CN107369705B (zh) * | 2017-07-06 | 2020-03-17 | 西安交通大学 | 一种GaAs半导体表面欧姆接触电极及其制作方法 |
CN110767781A (zh) * | 2019-11-18 | 2020-02-07 | 国网安徽省电力有限公司南陵县供电公司 | 一种高亮度发光二极管及其制造方法 |
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