CN1356555A - Integrated anemometer using polysilicon temp diode and its preparing process - Google Patents
Integrated anemometer using polysilicon temp diode and its preparing process Download PDFInfo
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- CN1356555A CN1356555A CN 02112524 CN02112524A CN1356555A CN 1356555 A CN1356555 A CN 1356555A CN 02112524 CN02112524 CN 02112524 CN 02112524 A CN02112524 A CN 02112524A CN 1356555 A CN1356555 A CN 1356555A
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- polysilicon
- diode
- well heater
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- anemometer
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Abstract
An integrated anemometer is composed of silicon chip, central ring heater and temp-sensing polysilicon diodes around the central ring heater. Its preparing process includes depositing polysilicon film on oxidized silicon chiop, photoetching to generate heater and active region of polysilicon diode, depositing SiO2 to cover polysilicon, potoetching SiO2 on heater and high injection area of diode, depositing SiO2, opening linding wire contact windows, evaporating Al to form electrodes and depositing passivated film for protecting heat and temp sensors.
Description
One, technical field:
The present invention is a kind of integrated anemometer of measuring wind, especially a kind of wind gage that adopts polysilicon temp diode to measure thermal loss.
Two, background technology:
Wind gage is widely used in meteorology, traffic and outwork field.Traditional measuring wind speed adopts the method for machinery to realize that volume is big, cost height, signal sampling difficulty.Fa Zhan hot wire anemometer had overcome the shortcoming that volume is big, signals collecting is difficult afterwards, but the measurement of wind direction needs extra equipment to realize.The two-dimentional two-wire system flow sensor while measuring wind on the external recently existing employing silicon and the report of wind direction.But we find, need carry out complex mathematical to measured signal when this method is measured wind direction and handle.Must could realize with microprocessors such as single-chip microcomputers.Therefore, signal Processing is not very convenient.
Three, summary of the invention:
(1) goal of the invention
It is low to the purpose of this invention is to provide a kind of cost, is suitable for producing in enormous quantities, the integrated anemometer and the manufacture method thereof of good stability, the simple polysilicon temp diode of use.
(2) technical scheme
The present invention adopts the integrated anemometer and the manufacture method thereof of polysilicon temp diode, structurally formed by polysilicon temp diode and annular well heater, the annular well heater is positioned at central authorities, in the circumference external symmetry of annular well heater, be provided with polysilicon temp diode equably, annular well heater and polysilicon temp diode all are integrated on the silicon chip.Its manufacture method is: a) the certain thickness polysilicon membrane of first deposit one deck on the silicon chip of oxidation, low-doped boron (or phosphorus) is to form P
-(or N
-) district; B) form well heater by photoetching and the active area of equally distributed polysilicon diode around it; C) deposit silicon dioxide covers polysilicon segment; D) silicon dioxide on the high injection region of photoetching well heater and diode carries out high concentration phosphorus (or boron) diffusion to form N to form the diffusion window
+(or P
+) district; E) carry out the silicon dioxide deposit and open the lead-in wire contact window for the second time, evaporation of aluminum and photoetching form extraction electrode; F) surface coverage one deck passivating film is with protection well heater and temperature sensor section.
Its principle of work is:
Middle annulus is a well heater, it will produce a stable heat and equably to around spread.Symmetric position has been placed many polysilicon temp diodes as measuring sensor around this well heater, and when calm, the temperature that the temperature that the heating annulus produces produces on each diode is the same; When certain direction is blown over the wind of certain wind speed, the temperature that each diode records is different, the temperature difference maximum on the pair of diodes of this moment consistent with wind direction (or more consistent).This temperature difference with the wind speed of process relation is one to one arranged, this value symbol has reflected the wind direction of blowing over well heater.Improve the precision of measuring wind and wind direction if desired, can be distributed in the number realization of well heater diode on every side by increase.This measurement mechanism can be produced on the common silicon chip.
(3) technique effect
The present invention adopts polysilicon diode to make sensor for measuring temperature, have that processes is simple, good stability, advantage such as use is simple and IC standard process compatible and chip occupying area be little, make the more temperature test point that distributes around the well heater become possibility, thereby realize the function that wind direction is measured.In addition, its cost low, be suitable for producing in enormous quantities.
Four, description of drawings:
Fig. 1 is a structural representation of the present invention.Polysilicon temp diode 1, annular well heater 2 are wherein arranged.
Five, embodiment
Structurally wind gage is made up of polysilicon temp diode 1 and annular well heater 2, annular well heater 2 is positioned at central authorities, in the circumference external symmetry of annular well heater 2, be provided with polysilicon temp diode 1 equably, annular well heater 2 and polysilicon temp diode 1 all are integrated on the silicon chip.
(1) can detect the air velocity transducer chip of eight wind directions:
Elder generation's thick polysilicon membrane of deposit one deck 500nm on the silicon chip of oxidation, phosphorus or boron mix and are formed with the conductive layer of higher electric resistivity then.Form the well heater and the active area of equally distributed polysilicon diode on every side by photoetching; Deposit silicon dioxide covers on the polysilicon again; Silicon dioxide on the photoetching diode active area forms the injection or the diffusion window of dense boron or phosphorus.This district carries out dense doped with boron (or phosphorus) diffusion to form the PN junction diode, forms heating resistor simultaneously.For the second time carry out the silicon dioxide deposit and open the lead-in wire contact window, evaporation of aluminum and photoetching form extraction electrode.As required, can be in the front or the back side corrode to separate well heater and polysilicon diode, improve the sensitivity of wind gage.
(2) the wind gage chip by heating resistor and thermometric polysilicon diode to forming:
Elder generation's thick polysilicon membrane of first deposit one deck 300nm on the silicon chip of oxidation; Phosphorus or boron doping grain are formed with the conductive layer and the heating resistor part of higher electric resistivity then.Form the well heater and the active area of equally distributed polysilicon diode on every side by photoetching; Deposit silicon dioxide covers on the polysilicon again; Silicon dioxide on the photoetching diode active area forms the injection or the diffusion window of dense boron or phosphorus.This district carries out dense doped with boron (or phosphorus) and looses to form the PN junction diode.For the second time carry out the silicon dioxide deposit and open the lead-in wire contact window, evaporation of aluminum and photoetching form extraction electrode.As required, can be in the front or the back side corrode to separate well heater and polysilicon diode, improve the sensitivity of wind gage.
Claims (2)
1, a kind of integrated anemometer that adopts polysilicon temp diode, it is characterized in that this wind gage is made up of polysilicon temp diode (1) and annular well heater (2), annular well heater (2) is positioned at central authorities, in the circumference external symmetry of annular well heater (2), be provided with polysilicon temp diode (1) equably, annular well heater (2) and polysilicon temp diode (1) all are integrated on the silicon chip.
2, a kind of manufacture method that adopts the integrated anemometer of polysilicon temp diode is characterized in that manufacture method is:
A) the certain thickness polysilicon membrane of first deposit one deck on the silicon chip of oxidation, low-doped boron (or phosphorus)
To form P
-(or N
-) district;
B) form well heater by photoetching and the active area of equally distributed polysilicon diode around it;
C) deposit silicon dioxide covers polysilicon segment;
D) silicon dioxide on the high injection region of photoetching diode to be to form the diffusion window, carry out high concentration phosphorus (or
Boron) diffusion is to form N
+(or P
+) district;
E) carry out the silicon dioxide deposit and open the lead-in wire contact window for the second time, evaporation of aluminum and photoetching form extraction electrode;
F) surface coverage one deck passivating film is with protection well heater and temperature sensor section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021125244A CN1141585C (en) | 2002-01-11 | 2002-01-11 | Integrated anemometer using polysilicon temp diode and its preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021125244A CN1141585C (en) | 2002-01-11 | 2002-01-11 | Integrated anemometer using polysilicon temp diode and its preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1356555A true CN1356555A (en) | 2002-07-03 |
| CN1141585C CN1141585C (en) | 2004-03-10 |
Family
ID=4742076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021125244A Expired - Fee Related CN1141585C (en) | 2002-01-11 | 2002-01-11 | Integrated anemometer using polysilicon temp diode and its preparing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1141585C (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1303426C (en) * | 2004-10-14 | 2007-03-07 | 东南大学 | Wind speed sensor based on micro mechanic working and its producing method |
| CN102082105A (en) * | 2010-12-06 | 2011-06-01 | 东南大学 | Thermal wind sensor based on anodic bonding technology and preparation method thereof |
| CN102213726A (en) * | 2011-02-28 | 2011-10-12 | 中国北方车辆研究所 | Sensing head of omni-directional wind speed sensor |
| CN104390667A (en) * | 2014-12-17 | 2015-03-04 | 哈尔滨理工大学 | Environment parameter integrated sensor capable of adjusting heating temperature of B-infiltration semiconductor |
| CN104482964A (en) * | 2014-12-17 | 2015-04-01 | 哈尔滨理工大学 | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor |
| CN106771339A (en) * | 2017-01-18 | 2017-05-31 | 东南大学 | Heat loss type air velocity transducer and preparation method thereof and detection method |
| CN107907707A (en) * | 2017-12-28 | 2018-04-13 | 东南大学 | A kind of wind speed wind direction sensor and detection method based on double-deck thermopile structure |
| CN108169509A (en) * | 2017-12-20 | 2018-06-15 | 东南大学 | Wind speed wind direction sensor based on octagon thermopile structure and preparation method thereof |
| CN108226568A (en) * | 2017-12-20 | 2018-06-29 | 东南大学 | Wind speed wind direction sensor based on octagon thermistor structure and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325879C (en) * | 2005-04-13 | 2007-07-11 | 东南大学 | Temperature, wind speed, wind direction and air pressure integration sensor |
-
2002
- 2002-01-11 CN CNB021125244A patent/CN1141585C/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1303426C (en) * | 2004-10-14 | 2007-03-07 | 东南大学 | Wind speed sensor based on micro mechanic working and its producing method |
| CN102082105A (en) * | 2010-12-06 | 2011-06-01 | 东南大学 | Thermal wind sensor based on anodic bonding technology and preparation method thereof |
| CN102213726A (en) * | 2011-02-28 | 2011-10-12 | 中国北方车辆研究所 | Sensing head of omni-directional wind speed sensor |
| CN104390667A (en) * | 2014-12-17 | 2015-03-04 | 哈尔滨理工大学 | Environment parameter integrated sensor capable of adjusting heating temperature of B-infiltration semiconductor |
| CN104482964A (en) * | 2014-12-17 | 2015-04-01 | 哈尔滨理工大学 | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor |
| CN104482964B (en) * | 2014-12-17 | 2017-02-22 | 哈尔滨理工大学 | Integrated high-accuracy boronized semiconductor heating wind speed and direction sensor |
| CN104390667B (en) * | 2014-12-17 | 2017-03-22 | 哈尔滨理工大学 | Environment parameter integrated sensor capable of adjusting heating temperature of B-infiltration semiconductor |
| CN106771339A (en) * | 2017-01-18 | 2017-05-31 | 东南大学 | Heat loss type air velocity transducer and preparation method thereof and detection method |
| CN106771339B (en) * | 2017-01-18 | 2019-06-25 | 东南大学 | Heat loss type air velocity transducer and preparation method thereof and detection method |
| CN108169509A (en) * | 2017-12-20 | 2018-06-15 | 东南大学 | Wind speed wind direction sensor based on octagon thermopile structure and preparation method thereof |
| CN108226568A (en) * | 2017-12-20 | 2018-06-29 | 东南大学 | Wind speed wind direction sensor based on octagon thermistor structure and preparation method thereof |
| CN107907707A (en) * | 2017-12-28 | 2018-04-13 | 东南大学 | A kind of wind speed wind direction sensor and detection method based on double-deck thermopile structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1141585C (en) | 2004-03-10 |
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Granted publication date: 20040310 Termination date: 20180111 |