CN113219317B - Performance parameter testing structure and method for thermosensitive detector - Google Patents
Performance parameter testing structure and method for thermosensitive detector Download PDFInfo
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- CN113219317B CN113219317B CN202110285398.8A CN202110285398A CN113219317B CN 113219317 B CN113219317 B CN 113219317B CN 202110285398 A CN202110285398 A CN 202110285398A CN 113219317 B CN113219317 B CN 113219317B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Abstract
The invention relates to the technical field of performance parameter testing of MEMS devices, and particularly discloses a performance parameter testing structure of a thermosensitive detector, which comprises a sensitive area, cantilever beams and frames, wherein the sensitive area is respectively connected with two groups of frames through the cantilever beams and is suspended in the air; the frame is arranged in a bilateral symmetry mode about the sensitive area, the resistors and the thermosensitive units are arranged in the sensitive area, the cantilever beam is internally provided with a plurality of wires, the frame is provided with a first electric connection port and a second electric connection port, the resistors are respectively connected with the two groups of first electric connection ports through the two groups of wires, and the thermosensitive units are respectively connected with the two groups of second electric connection ports through the two groups of wires. The invention also discloses a method for testing the performance parameters of the thermosensitive detector. The performance parameter testing structure of the thermosensitive detector provided by the invention has the characteristics of simple structure, convenience in operation, accuracy in measurement and the like.
Description
Technical Field
The invention relates to the technical field of performance parameter testing of MEMS (micro-electromechanical systems) devices, in particular to a performance parameter testing structure and a testing method of a thermosensitive detector.
Background
The thermosensitive detector is a sensor with a suspended structure, which receives a signal to be detected, causes the temperature in a sensitive area to change and leads the electrical characteristics of a thermosensitive unit to change. Common thermosensitive detectors include uncooled infrared detectors, pirani vacuum gauges, flow meters, and the like. The temperature coefficient is one of important performance parameters of the thermosensitive material, and the accurate acquisition of the temperature coefficient becomes a very important component for exploring the thermosensitive detector.
The traditional measuring method of the temperature coefficient is that before the sensor is not suspended in the air, the sensor is placed on a temperature-changing probe station and is tested by a semiconductor parameter instrument. The method needs to utilize expensive equipment to test the electrical characteristics of the thermosensitive unit under different temperature nodes under specific test conditions and platforms, and obtains the temperature coefficient through data analysis. The equipment is complicated, the operation is complicated, and the sensor structure can not be obtained after being suspended.
Disclosure of Invention
The invention provides a performance parameter testing structure and a performance parameter testing method for a thermosensitive detector.
As a first aspect of the present invention, a performance parameter testing structure of a thermal detector is provided, where the performance parameter testing structure of a thermal detector includes a sensitive area, cantilever beams, and frames, where the sensitive area is connected to and suspended in the air by the cantilever beams respectively; the frame is arranged in a bilateral symmetry mode about the sensitive area, a resistor and a thermosensitive unit are arranged in the sensitive area, a plurality of wires are arranged in the cantilever beam, a first electric connection port and a second electric connection port are arranged on the frame, the resistor is connected with the two groups of first electric connection ports through the two groups of wires respectively, and the thermosensitive unit is connected with the two groups of second electric connection ports through the two groups of wires respectively.
Further, the material of the frame is selected from any one of silicon, germanium and silicon germanium.
Further, the material of the resistor is selected from any one of polysilicon, platinum and gold.
Further, the type of the heat sensing unit includes any one of a heat resistance type, a diode type, and a thermopile type.
Further, when the type of the thermosensitive unit is a thermal resistance type, the material of the thermosensitive unit is selected from any one of vanadium oxide, N-type doped polysilicon, P-type doped polysilicon, N-type doped amorphous silicon and P-type doped amorphous silicon;
when the type of the thermosensitive unit is a diode type, the thermosensitive unit is an N-well diode or a P-well diode;
when the type of the thermosensitive unit is a thermopile type, the thermosensitive unit is a thermopile composed of any two materials of N-type polycrystalline silicon, P-type polycrystalline silicon, titanium, aluminum and copper.
Further, the material of the conductive wire is selected from any one of doped polysilicon, titanium, aluminum and copper.
As another aspect of the present invention, a method for testing performance parameters of a thermal detector is provided, which uses the above-mentioned structure for testing performance parameters of a thermal detector, and includes:
step one, at the ambient temperature T0Then, a first constant current I is applied to the resistor in the sensitive region through two sets of first electrical connection ports0Or a first constant voltage V0Measuring a first constant voltage V of said resistor0Or a first constant current I0Calculating the ambient temperature T0Resistance R of lower resistor0＝V0/I0(ii) a The heat-sensitive unit is in a heat resistance type or diode type structure and is electrified with a second constant current I through two groups of second electric connection ports1Or a second constant voltage V1Measuring a second constant voltage V of said heat-sensitive cell1Or a second constant current I1Calculating the ambient temperature T0Resistance R of lower thermosensitive unit1＝V1/I1；
Step two, at the ambient temperature T0Next, a third constant current I is applied to the resistor in the sensitive area through the two sets of first electrical connection ports2Or a third constant voltage V2Measuring a third constant voltage V of said resistor2Or a third constant current I2Calculating the temperature T in the sensitive area through the temperature coefficient of resistance TCR of the resistor1＝T0+(V2/I2-R0)/(ROTCR)；
Step three, the resistance in the sensitive area is switched on to be constantCurrent I2Or a third constant voltage V2In the case of (1), a fourth constant current I outputted by the thermal cell in the operating condition is tested through the two sets of second electrical connection ports3Or a fourth constant voltage V3Thereby obtaining a temperature coefficient alpha of the thermosensitive unit, wherein the calculation formula of the temperature coefficient alpha is as follows:
wherein, T0Representing the ambient temperature.
Further, the first constant current I0Or a first constant voltage V0Is a current or voltage such that the temperature change in the sensitive area is less than 2K.
Further, the third constant current I2Or a third constant voltage V2Is a current or voltage such that the temperature change in the sensitive region is 5K or more.
Further, the operation of the heat-sensitive unit includes:
the heat-resistance type or diode type heat-sensitive unit is at the fourth constant voltage V3The lower test outputs a fourth constant current I3Or in the case of said fourth constant current I3The lower test outputs a fourth constant voltage V3The case (1);
the thermopile type thermosensitive unit directly outputs a fourth constant voltage V3The case (1).
The performance parameter testing structure of the thermosensitive detector provided by the invention has the following advantages: through the design of the test structure, the relation between the resistance and the temperature is obtained by changing the current or the voltage of the resistance with the temperature coefficient in the sensitive area, the temperature change value of the sensitive area is further obtained, and the current or the voltage of the thermosensitive unit is measured to obtain the temperature coefficient of the thermosensitive unit structure.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a schematic diagram of a performance parameter testing structure of a thermal detector according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a performance parameter testing structure of a thermal detector according to an embodiment of the present invention.
FIG. 3 is a flow chart of a method for testing performance parameters of a thermal detector according to an embodiment of the invention.
Description of reference numerals: 1-a sensitive area; 2-cantilever beam; 3-a frame; 4-resistance; 5-a thermosensitive unit; 6-a wire; 7-a first electrical connection port; 8-second electrical connection port.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description will be given to the embodiments, structures, features and effects of the performance parameter testing structure of the thermal detector according to the present invention with reference to the accompanying drawings and preferred embodiments. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without any inventive step, are within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present embodiment, a performance parameter testing structure of a thermal detector is provided, fig. 1 is a schematic diagram of the performance parameter testing structure of the thermal detector according to the embodiment of the present invention, fig. 2 is a cross-sectional view of the performance parameter testing structure of the thermal detector according to the embodiment of the present invention, as shown in fig. 1-2, the performance parameter testing structure of the thermal detector includes a sensitive area 1, cantilever beams 2 and frames 3, wherein the sensitive area 1 is respectively connected with two sets of the frames 3 through the cantilever beams 2 and is suspended in the air; the frame 3 is arranged in bilateral symmetry with respect to the sensitive area 1, a resistor 4 and a thermosensitive unit 5 are arranged in the sensitive area 1, a plurality of wires 6 are arranged in the cantilever beam 2, a first electric connection port 7 and a second electric connection port 8 are arranged on the frame 3, the resistor 4 is respectively connected with the first electric connection ports 7 through the two groups of wires 6, and the thermosensitive unit 5 is respectively connected with the second electric connection ports 8 through the two groups of wires 6.
Preferably, the material of the frame 3 is selected from any one of silicon, germanium and silicon germanium.
Preferably, the material of the resistor 4 is selected from any one of polysilicon, platinum and gold.
Specifically, the resistor 4 has a certain temperature coefficient of resistance, and may be doped polysilicon, platinum, gold, or the like.
Preferably, the heat sensitive unit 5 has a certain temperature coefficient, and the type of the heat sensitive unit 5 includes any one of a heat resistance type, a diode type, and a thermopile type.
Preferably, when the type of the thermal sensitive unit 5 is a thermal resistance type, the material of the thermal sensitive unit 5 is selected from any one of vanadium oxide, N-type doped polysilicon, P-type doped polysilicon, N-type doped amorphous silicon and P-type doped amorphous silicon;
when the type of the thermosensitive unit 5 is a diode type, the thermosensitive unit 5 is an N-well diode or a P-well diode;
when the type of the thermosensitive unit 5 is a thermopile type, the thermosensitive unit 5 is a thermopile composed of any two materials of N-type polycrystalline silicon, P-type polycrystalline silicon, titanium, aluminum, and copper.
Preferably, the material of the conductive wire 6 is selected from any one of doped polysilicon, titanium, aluminum and copper.
Specifically, the wire 6 may be doped polysilicon, titanium, aluminum, copper, etc., and the plurality of wires may be of different materials.
Specifically, the sensitive area 1 is a dielectric film embedded with a resistor 4 and a thermosensitive unit 5, the cantilever beam 2 is a dielectric beam embedded with a plurality of wires 6, and the frame 3 is a heat conductive material having two sets of electrical connection ports.
Specifically, the thermally conductive material may be silicon, germanium, silicon germanium, or the like.
As another embodiment of the present invention, as shown in fig. 3, there is provided a method for testing performance parameters of a thermal detector, which uses the above-mentioned structure for testing performance parameters of a thermal detector, and includes:
step one, at the ambient temperature T0Next, a first constant current I is applied to the resistor 4 in the sensitive zone 1 through two sets of first electrical connection ports 70Or a first constant voltage V0Measuring a first constant voltage V of said resistance 40Or a first constant current I0Calculating the ambient temperature T0Resistance R of lower resistor 40＝V0/I0(ii) a The heat-sensitive unit 5 is of a heat resistance type or a diode type structure, and a second constant current I is conducted to the heat-sensitive unit 5 through two groups of second electric connection ports 81Or a second constant voltage V1Measuring a second constant voltage V of said thermal cell 51Or a second constant current I1Calculating the ambient temperature T0Resistance R of lower thermo-sensitive unit 51＝V1/I1；
Step two, at the ambient temperature T0Next, a third constant current I is applied to the resistor 4 in the sensitive zone 1 through two sets of first electrical connection ports 72Or a third constant voltage V2Measuring a third constant voltage V of said resistance 42Or a third constant current I2Calculating the temperature T in the sensitive area 1 through the temperature coefficient of resistance TCR of the resistor 41＝T0+(V2/I2-R0)/(ROTCR)；
Step three, a third constant current I is conducted to the resistor 4 in the sensitive area 12Or a third constant voltage V2In the case of (1), the fourth constant current I output by the thermal-sensitive unit 5 in the operating condition is tested through the two sets of second electrical connection ports 83Or a fourth constant voltage V3Thereby, the temperature coefficient α of the temperature-sensitive unit 5 is obtained, wherein the calculation formula of the temperature coefficient α is as follows:
wherein, T0Representing the ambient temperature.
Preferably, the first constant current I0Or a first constant voltage V0Is a current or voltage such that the temperature change in the sensitive zone 1 is less than 2K.
Preferably, the third constant current I2Or a third constant voltage V2Is a current or voltage such that the temperature change in the sensitive region 1 is 5K or more.
Preferably, the operation of the temperature-sensitive unit 5 includes:
the heat-resistance type or diode type heat-sensitive unit is at the fourth constant voltage V3The lower test outputs a fourth constant current I3Or in the case of said fourth constant current I3The lower test outputs a fourth constant voltage V3The case (1);
the thermopile type thermosensitive unit directly outputs a fourth constant voltage V3The case (1).
The method comprises the steps of firstly measuring the resistance value of a resistor in a sensitive area and the impedance of a thermosensitive unit at the ambient temperature, then introducing current or voltage to the resistor, calculating the temperature change of the sensitive area through the TCR of the resistor, simultaneously measuring the current or voltage of the thermosensitive unit, and finally calculating the temperature coefficient of the thermosensitive unit structure; the invention is a structure for measuring performance parameters in a self-test way, and has the characteristics of simple structure, convenient operation, accurate measurement and the like.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A method for testing performance parameters of a heat-sensitive detector is characterized in that the structure for testing the performance parameters of the heat-sensitive detector comprises a sensitive area (1), cantilever beams (2) and frames (3), wherein the sensitive area (1) is respectively connected with the two groups of frames (3) through the cantilever beams (2) and is suspended in the air; the frame (3) is arranged in bilateral symmetry with respect to the sensitive area (1), a resistor (4) and a thermosensitive unit (5) are arranged in the sensitive area (1), a plurality of wires (6) are arranged in the cantilever beam (2), a first electric connection port (7) and a second electric connection port (8) are arranged on the frame (3), the resistor (4) is respectively connected with the two groups of first electric connection ports (7) through the two groups of wires (6), and the thermosensitive unit (5) is respectively connected with the two groups of second electric connection ports (8) through the two groups of wires (6);
the method for testing the performance parameters of the thermosensitive detector comprises the following steps:
step one, at the ambient temperature T0Then, a first constant current I is applied to the resistors (4) in the sensitive zone (1) through two sets of first electrical connection ports (7)0Or a first constant voltage V0Measuring a first constant voltage V of said resistance (4)0Or a first constant current I0Calculating the ambient temperature T0Resistance R of the lower resistor (4)0＝V0/I0(ii) a The heat-sensitive unit (5) is of a heat resistance type or diode type structure, and a second constant current is communicated with the heat-sensitive unit (5) through two groups of second electric connection ports (8)Constant current I1Or a second constant voltage V1Measuring a second constant voltage V of said thermal cell (5)1Or a second constant current I1Calculating the ambient temperature T0Resistance R of lower thermosensitive unit (5)1＝V1/I1；
Step two, at the ambient temperature T0Then, a third constant current I is applied to the resistor (4) in the sensitive area (1) through two groups of first electric connection ports (7)2Or a third constant voltage V2Measuring a third constant voltage V of said resistance (4)2Or a third constant current I2Calculating the temperature T in the sensitive area (1) through the temperature coefficient of resistance TCR of the resistor (4)1＝T0+(V2/I2-R0)/(R0 TCR)；
Thirdly, a third constant current I is conducted to the resistor (4) in the sensitive area (1)2Or a third constant voltage V2In the case of (2), a fourth constant current I output by the thermal cell (5) in the operating condition is tested through two sets of second electrical connection ports (8)3Or a fourth constant voltage V3Thereby obtaining a temperature coefficient alpha of the thermosensitive unit (5), wherein the calculation formula of the temperature coefficient alpha is as follows:
wherein, T0Representing the ambient temperature.
2. A method for testing performance parameters of a thermal detector according to claim 1, characterized in that the material of the frame (3) is selected from any one of silicon, germanium and silicon germanium.
3. A method for testing performance parameters of a thermal detector according to claim 1, characterized in that the material of the resistor (4) is selected from any one of polysilicon, platinum and gold.
4. A method for testing performance parameters of a thermal detector according to claim 1, characterized in that the type of the thermal unit (5) comprises any one of a thermal resistance type, a diode type and a thermopile type.
5. The method for testing the performance parameters of the thermal detector according to claim 4,
when the type of the thermosensitive unit (5) is a thermal resistance type, the material of the thermosensitive unit (5) is selected from any one of vanadium oxide, N-type doped polysilicon, P-type doped polysilicon, N-type doped amorphous silicon and P-type doped amorphous silicon;
when the type of the thermosensitive unit (5) is a diode type, the thermosensitive unit (5) is an N-well diode or a P-well diode;
when the type of the thermosensitive unit (5) is a thermopile type, the thermosensitive unit (5) is a thermopile composed of any two materials of N-type polycrystalline silicon, P-type polycrystalline silicon, titanium, aluminum and copper.
6. A method for testing performance parameters of a thermal detector according to claim 1, characterized in that the material of the conducting wire (6) is selected from any one of doped polysilicon, titanium, aluminum and copper.
7. A method as claimed in claim 1, wherein the first constant current I is greater than the second constant current I0Or a first constant voltage V0Is a current or voltage such that the temperature change in the sensitive zone (1) is less than 2K.
8. A method as claimed in claim 1, wherein the third constant current I is measured by a temperature sensor2Or a third constant voltage V2Is a current or voltage such that the temperature change in the sensitive region (1) is 5K or more.
9. A method for testing the performance parameters of a thermal detector according to claim 1, characterized in that the working conditions of the thermal unit (5) comprise:
the heat-resistance type or diode type heat-sensitive unit is at the fourth constant voltage V3The lower test outputs a fourth constant current I3Or in the case of said fourth constant current I3The lower test outputs a fourth constant voltage V3The case (1);
the thermopile type thermosensitive unit directly outputs a fourth constant voltage V3The case (1).
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