CN1341276A - 清洗半导体晶片的方法和装置 - Google Patents
清洗半导体晶片的方法和装置 Download PDFInfo
- Publication number
- CN1341276A CN1341276A CN00804321A CN00804321A CN1341276A CN 1341276 A CN1341276 A CN 1341276A CN 00804321 A CN00804321 A CN 00804321A CN 00804321 A CN00804321 A CN 00804321A CN 1341276 A CN1341276 A CN 1341276A
- Authority
- CN
- China
- Prior art keywords
- semiconductor wafer
- chemical
- cleaning fluid
- closed chamber
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 239000012530 fluid Substances 0.000 claims abstract description 52
- 239000000126 substance Substances 0.000 claims abstract description 44
- 238000005201 scrubbing Methods 0.000 claims abstract description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000356 contaminant Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims description 10
- 229960002050 hydrofluoric acid Drugs 0.000 claims description 9
- 239000006227 byproduct Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 34
- 230000008901 benefit Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 4
- 238000009833 condensation Methods 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 100
- 238000005498 polishing Methods 0.000 description 42
- 239000012535 impurity Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012636 effector Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
- B08B1/34—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members rotating about an axis parallel to the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US43035399A | 1999-10-28 | 1999-10-28 | |
US09/430,353 | 1999-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1341276A true CN1341276A (zh) | 2002-03-20 |
Family
ID=23707186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN00804321A Pending CN1341276A (zh) | 1999-10-28 | 2000-09-13 | 清洗半导体晶片的方法和装置 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1145287A1 (fr) |
JP (1) | JP2003513443A (fr) |
KR (1) | KR20010089722A (fr) |
CN (1) | CN1341276A (fr) |
WO (1) | WO2001031691A1 (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100373554C (zh) * | 2005-01-28 | 2008-03-05 | 联华电子股份有限公司 | 半导体芯片的清洁方法 |
CN101045233B (zh) * | 2006-03-31 | 2010-09-08 | 细美事有限公司 | 处理基材的设备和方法 |
CN1898776B (zh) * | 2003-12-23 | 2011-04-20 | 兰姆研究有限公司 | 用于清洁基板的设备和方法 |
CN101730929B (zh) * | 2007-05-08 | 2012-07-18 | 朗姆研究公司 | 清洁cmp后的晶片的热学方法 |
CN103878148A (zh) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | 一种对晶圆表面硅晶渣进行清洗的方法 |
CN105405930A (zh) * | 2015-12-21 | 2016-03-16 | 南昌大学 | 一种太阳电池用多晶硅片的微液滴刻蚀制绒方法 |
CN110398500A (zh) * | 2019-08-06 | 2019-11-01 | 武汉鼎泽新材料技术有限公司 | 评价晶片清洗效率的方法及实验装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100382549B1 (ko) * | 2000-12-21 | 2003-05-09 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US20040029494A1 (en) * | 2002-08-09 | 2004-02-12 | Souvik Banerjee | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
CN101935883B (zh) * | 2010-09-10 | 2012-05-02 | 北京工业大学 | 超高真空离子源晶片清洗系统 |
CN102779724A (zh) * | 2011-05-11 | 2012-11-14 | 均豪精密工业股份有限公司 | 单面蚀刻方法及单面蚀刻装置 |
CN102489468B (zh) * | 2011-12-23 | 2015-06-24 | 保定天威英利新能源有限公司 | 一种石墨材质基板表层氮化硅的清洗方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1989000895A1 (fr) * | 1987-07-29 | 1989-02-09 | Purusar Corporation | Traitement de surface pour eliminer des impuretes dans des microcavites |
US5129955A (en) * | 1989-01-11 | 1992-07-14 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method |
JPH07115078A (ja) * | 1993-10-19 | 1995-05-02 | Shimada Phys & Chem Ind Co Ltd | 基板の処理方法およびその装置 |
US5723019A (en) * | 1994-07-15 | 1998-03-03 | Ontrak Systems, Incorporated | Drip chemical delivery method and apparatus |
JP3119289B2 (ja) * | 1994-10-21 | 2000-12-18 | 信越半導体株式会社 | 半導体ウェーハの洗浄方法 |
JP3366239B2 (ja) * | 1997-11-07 | 2003-01-14 | 松下電器産業株式会社 | プローブカードの洗浄装置 |
-
2000
- 2000-09-13 WO PCT/US2000/025099 patent/WO2001031691A1/fr not_active Application Discontinuation
- 2000-09-13 EP EP00964988A patent/EP1145287A1/fr not_active Withdrawn
- 2000-09-13 CN CN00804321A patent/CN1341276A/zh active Pending
- 2000-09-13 JP JP2001534191A patent/JP2003513443A/ja active Pending
- 2000-09-13 KR KR1020017008231A patent/KR20010089722A/ko not_active Application Discontinuation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1898776B (zh) * | 2003-12-23 | 2011-04-20 | 兰姆研究有限公司 | 用于清洁基板的设备和方法 |
CN100373554C (zh) * | 2005-01-28 | 2008-03-05 | 联华电子股份有限公司 | 半导体芯片的清洁方法 |
CN101045233B (zh) * | 2006-03-31 | 2010-09-08 | 细美事有限公司 | 处理基材的设备和方法 |
CN101730929B (zh) * | 2007-05-08 | 2012-07-18 | 朗姆研究公司 | 清洁cmp后的晶片的热学方法 |
CN103878148A (zh) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | 一种对晶圆表面硅晶渣进行清洗的方法 |
CN105405930A (zh) * | 2015-12-21 | 2016-03-16 | 南昌大学 | 一种太阳电池用多晶硅片的微液滴刻蚀制绒方法 |
CN105405930B (zh) * | 2015-12-21 | 2017-04-05 | 南昌大学 | 一种太阳电池用多晶硅片的微液滴刻蚀制绒方法 |
CN110398500A (zh) * | 2019-08-06 | 2019-11-01 | 武汉鼎泽新材料技术有限公司 | 评价晶片清洗效率的方法及实验装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2003513443A (ja) | 2003-04-08 |
WO2001031691A1 (fr) | 2001-05-03 |
EP1145287A1 (fr) | 2001-10-17 |
KR20010089722A (ko) | 2001-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |