CN1333926A - 高分子半导体场效应晶体管 - Google Patents
高分子半导体场效应晶体管 Download PDFInfo
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- 229920000642 polymer Polymers 0.000 title claims abstract description 29
- 230000005669 field effect Effects 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000012212 insulator Substances 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000000615 nonconductor Substances 0.000 claims abstract description 4
- 150000002220 fluorenes Chemical group 0.000 claims description 18
- -1 9-substituted fluorene unit Chemical group 0.000 abstract description 5
- 239000004332 silver Substances 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000000178 monomer Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthene Chemical compound C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 3
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000037361 pathway Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 229920005547 polycyclic aromatic hydrocarbon Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- FNQJDLTXOVEEFB-UHFFFAOYSA-N 1,2,3-benzothiadiazole Chemical compound C1=CC=C2SN=NC2=C1 FNQJDLTXOVEEFB-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- 239000005964 Acibenzolar-S-methyl Substances 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- CWRYPZZKDGJXCA-UHFFFAOYSA-N acenaphthene Chemical compound C1=CC(CC2)=C3C2=CC=CC3=C1 CWRYPZZKDGJXCA-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005129 aryl carbonyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000000259 cinnolinyl group Chemical class N1=NC(=CC2=CC=CC=C12)* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000004826 dibenzofurans Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002240 furans Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910001506 inorganic fluoride Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000005053 phenanthridines Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical class C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 150000003513 tertiary aromatic amines Chemical class 0.000 description 1
- 150000004655 tetrazenes Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000001608 tolans Chemical class 0.000 description 1
- 125000005389 trialkylsiloxy group Chemical group 0.000 description 1
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Abstract
场效应晶体管由五个元件组成。第一元件是绝缘体层,它是一种电绝缘体,例如二氧化硅,并具有第一侧面和第二侧面。第二元件是栅,它是一种导电体,例如银,该栅定位在绝缘体层的第一侧面上。第三元件是半导体层,它包括一种聚合物,这种聚合物中至少10重量%的单体单元选自9位取代的芴单元和/或9,9位取代的芴单元,该半导体层具有第一侧面、第二侧面、第一端和第二端,半导体层的第二侧面位于绝缘体层的第二侧面上。第四元件是一个源,它是一种导电体,例如银,该源与半导体层的第一端电接触。第五元件是一个漏,它是一种导电体,例如银,该漏可与半导体层的第二端电接触。施加于栅的负偏压会在连接源与漏的半导体层中形成传导通道。另一方面,施加于栅的正偏压会在半导体层中形成导电通道。
Description
本申请要求1999年1月15日递交的美国临时申请系列号60/116,112优先权。
本发明涉及晶体管场。更具体地说，本发明涉及基于高分子半导体的晶体管场。
晶体管是重要的电子器件。金属氧化物半导体场效应晶体管(MOSFET)是人们所熟知的。
场效应晶体管包括五个元件。第一元件是绝缘体层，它是一种电绝缘体，并具有第一侧面和第二侧面。第二元件是栅，它是一种导电体，该栅与绝缘体层的第一侧面相邻。第三元件是半导体层，它包括一种聚合物，这种聚合物中至少10重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元，该半导体层具有第一侧面、第二侧面、第一端和第二端，半导体层的第二侧面与绝缘体层的第二侧面相邻。第四元件是一个源，它是一种导电体，该源与半导体层的第一端形成电接触。第五元件是一个漏，它是一种导电体，该漏可与半导体层的第二端电接触。施加于栅的负偏压会在连接源与漏的半导体层中形成空穴传导通道。施加于栅的正偏压会在半导体层中形成导电通道。
图1是本发明装置的截面侧视图。
在这里本发明被称为“金属-绝缘体-半导体场效应晶体管”(MISFET)。MISFET包括与绝缘体层相邻的半导体层。两个电极(源和漏)固定在半导体层上，而第三个电极(栅)与绝缘体层的另一侧面相邻。半导体层包括一种聚合物。该聚合物中至少10重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元。在P型场效应晶体管中，向栅电极施加负DC电压会在半导体层的绝缘体侧面附近引起“空穴”的累积，从而产生传导通道，通过在源与漏间空穴的传输可使电流流过该传导通道，以致于使MISFET处于“导通”的状态。将栅的电压调零以使得在累积区中的空穴耗尽并中止电流，这时MISFET处于“断开”的状态。MISFET打开和关闭的速度取决于“空穴”由源移动到漏的速度，并由此取决于“空穴”的迁移率。另一方面，在n型场效应晶体管中，施加于栅的正偏压会在半导体层中形成导电通道。
现在参照图1，其示出的是本发明装置10的截面侧视图。装置10包括绝缘体层11，该绝缘体层11是一种电绝缘体，其具有第一侧面12和第二侧面13。装置10还包括栅14，该栅14是一种导电体，其与绝缘体层11的第一侧面12相邻(并优选与其接触)。装置10还包括半导体层15，该半导体层15含有一种聚合物，该聚合物中至少10重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元，该半导体层15具有第一侧面16、第二侧面17、第一端18和第二端19，半导体层的第二侧面17与绝缘体层的第二侧面13相邻(并优选相接触)。装置10还包括源20，该源20是一种导电体，它可与半导体层15的第一端18电接触。装置10还包括漏21，该漏21是一种导电体，它可与半导体层15的第二端19电接触。与装置1O的电连接是通过将电导线22、23和24分别与栅14、源20和漏21相连接实现的。所示的装置10还任选的包括基材25，该基材可作为装置10的结构基底。
再参照图1，装置10可通过下述步骤形成。首先，在基材25上形成栅14。基材25可选自各种材料，包括硅片、玻璃或塑料。栅14可由任何导电材料(通常为金属例如银、金或铝，但也可使用导电的非金属，例如铟锡氧化物或重掺杂的硅)形成。栅14优选通过适当的屏蔽，由任何标准技术来形成，它包括对掺杂硅的离子注入法，对金属的真空热蒸发或溅射。另外，在由足够厚的导电材料，例如铝片形成栅14的情况下，可省去基材25。
然后，将绝缘体层11形成在栅14上。用于绝缘体层11的材料优选要有至少为3的介电常数，它可以是一种聚合物(例如，聚酰亚胺，聚甲基丙烯酸甲酯，聚砜等)，无机氧化物(例如GeO，GaO，SiO，MgO，SiO2，SnO，SnO2)，无机氟化物(例如，CsF，CaF2，MgF2，LiF)和无机氮化物(例如，Si3N4)。当在装置10额定电压内保持栅14与半导体层15间的电绝缘时，绝缘体层11的厚度最优选为尽可能的薄。
然后通过例如标准溶液法将半导体层15形成在绝缘层上。半导体层15包括一种聚合物。该聚合物中至少10重量％(优选至少20重量％，更优选至少30重量％)的单体单元选自9位取代的芴单元和9，9位取代的芴单元。
这些聚合物的例子公开在美国专利US5708130；US5777070，美国专利申请号为08/861469，申请日为1997.5.21；US5962631和WO99/54385中。
具体地说，该聚合物优选具有下式的基团
其中R1独立地是C1-20烃基或含一或多个S，N，O，P或Si原子的C1- 20烃基，C4-16烃基羰基氧，C4-16芳基(三烷基甲硅烷氧基)或两个R1都与芴环的第9个碳形成C5-20环结构或含有一或多个S，N或O杂原子的C4-20环结构；
R2独立地是C1-20烃基，C1-20烃氧基，C1-20硫醚，C1-20烃基羰基氧或氰基以及
A独立地是0或1；和/或下式的基团：
其中R2和a均与上面所限定的一样，R3独立地是C1-20烃基或被二(C1-20烷基)氨基取代的C1-20烃基、C1-20烃基氧或C1-20烃基或三(C1 -10烷基)甲硅烷氧基。
可使用的共聚单体基团包括：和
R3独立地是羧基，C1-C20烷基，C1-C20烷氧基或式-CO2R4所表示的基团，其中R4为C1-C20烷基；以及
b独立地是O～3的整数。这种共聚物的例子包括：
其它的共聚单体基团包括：茋，二苯乙炔，C6-20单核/多核芳烃，和C2-10单核/多核杂环。单核/多核芳烃的例子包括：苯，萘，二氢苊，菲，蒽，荧蒽，芘，红荧烯，和。单核/多核杂环的例子包括：五原子杂环，例如呋喃，噻吩，吡咯，噁唑，异噁唑，噻唑，异噻唑，咪唑，噁二唑，噻重氮，吡唑；六原子杂环，例如吡啶，哒嗪，咪啶，吡嗪，三嗪，和四氮烯；苯并稠环体系，例如苯并噁唑，苯并噻唑，苯并咪唑，喹啉，异喹啉，噌啉，喹唑啉，喹喔啉，酞嗪，苯并噻重氮，和苯并三嗪；以及多核稠环体系，例如吩嗪，菲啶，吖啶，咔唑，和二苯并呋喃。通常含有最多30个碳原子的共轭化合物也可用于此目的。任选的，它们可被一个或多个不会对聚合物组合物的荧光性质造成损害的取代基取代。取代基的例子包括：C1-20烃基，C1-20(硫代)烷氧基，C1-20(硫代)芳氧基，氰基，氟，氯，C1-20烷氧基羰基，C1- 20芳氧基羰基，C1-20羧基和烷基(芳基)磺酰基。已知的荧光猝灭剂的取代基例如芳基羰基和硝基是不希望存在的。也可使用由结构(1)-(8)所例举的多个配合物结构的共轭单体单元。 
Y＝S或O
优选的含芴的聚合物是具有高载流子迁移率的那些聚合物，该载流子的迁移率是通过标准技术测量的，例如在Van der Auweraer等人的高级材料(Advanced Materials)第6卷第199页(1994年)中描述的飞行时间实验。更优选的为具有非耗散的载流子输送性能的含芴聚合物，例如在Redecker等人的Applied Physics Letters第73卷第1565页(1998年)中描述的聚(9，9-二辛基芴-2，7-二基)。还优选的是，上述US’469和’187中描述的与叔芳胺交替的芴共聚物。这些聚合物的载流子迁移率至少为1×10-4厘米2/伏特-秒。
半导体层15可包括聚合物混合物。半导体层15的聚合物为均匀的或是相分离的；它的形态也可是无定形的，半结晶的，或液晶的。如Grell等人在高级材料第9卷第798页(1997年)中描述的，为了增强载流子的迁移率，该聚合物也可呈液晶态。半导体层15的厚度不是关键的，它可在例如1nm～1000nm，优选10nm～500nm，最优选20nm～100nm之间变化。
然后，用溅射或在真空中的热蒸发，通过诸如屏蔽来沉积源20和漏21。用于源20和漏21的优选材料为金，银或铝。施加于栅的负偏压会在半导体层15和绝缘体11的界面处或其附近形成传导通道。当漏21相对于源20呈负压时，电流会从源20流到漏21。本发明的MISFET的特征在于具有高的开闭比以及场效应迁移率。
Claims (5)
1、一种场效应晶体管，包括：
(a)绝缘体层，它是一种电绝缘体，并具有第一侧面和第二侧面；
(b)栅，它是一种导电体，该栅与绝缘体层的第一侧面相邻；
(c)半导体层，它包括一种聚合物，这种聚合物中至少10重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元，该半导体层具有第一侧面、第二侧面、第一端和第二端，半导体层的第二侧面与绝缘体层的第二侧面相邻；
(d)源，它是一种导电体，该源与半导体层的第一端电接触；
(e)漏，它是一种导电体，该漏可与半导体层的第二端电接触。
2、根据权利要求1的晶体管，其中半导体层基本上由一种聚合物组成，该聚合物中至少10重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元。
3、根据权利要求1或2的晶体管，其中该聚合物中至少20重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元。
4、根据权利要求1或2的晶体管，其中该聚合物中至少30重量％的单体单元选自9位取代的芴单元和9，9位取代的芴单元。
5、根据权利要求1、2、3或4的晶体管，其中半导体层与绝缘体层直接接触，且其中栅与绝缘体层直接接触。
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| Application Number | Priority Date | Filing Date | Title |
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| US11611299P | 1999-01-15 | 1999-01-15 | |
| US60/116,112 | 1999-01-15 |
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| CN1333926A true CN1333926A (zh) | 2002-01-30 |
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| Country | Link |
|---|---|
| US (1) | US6204515B1 (zh) |
| EP (1) | EP1151484A1 (zh) |
| JP (1) | JP4743968B2 (zh) |
| KR (1) | KR100766288B1 (zh) |
| CN (1) | CN1167146C (zh) |
| CA (1) | CA2355869C (zh) |
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| AU777444B2 (en) * | 1999-06-21 | 2004-10-14 | Flexenable Limited | Aligned polymers for an organic TFT |
| US6621098B1 (en) * | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
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| US6452207B1 (en) * | 2001-03-30 | 2002-09-17 | Lucent Technologies Inc. | Organic semiconductor devices |
| US7074885B2 (en) * | 2001-05-03 | 2006-07-11 | E.I. Du Pont De Nemours And Company | Electroactive fluorene copolymers and devices made with such polymers |
| US7074886B2 (en) * | 2001-05-07 | 2006-07-11 | E. I. Du Pont De Memours And Company | Electroactive fluorene polymers having perfluoroalkyl groups, process for preparing such polymers and devices made with such polymers |
| EP1393389B1 (en) * | 2001-05-23 | 2018-12-05 | Flexenable Limited | Laser patterning of devices |
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| US7115899B2 (en) * | 2003-10-29 | 2006-10-03 | E. I. Du Pont De Nemours And Company | Light-emitting copolymers and electronic devices using such copolymers |
| US7119360B2 (en) * | 2003-10-29 | 2006-10-10 | Max-Plank-Society | Light-emitting polymers and electronic devices using such polymers |
| US20050110767A1 (en) * | 2003-11-24 | 2005-05-26 | Elo Touchsystems, Inc. | Method of manufacturing touch sensor with switch tape strips |
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| US5708130A (en) | 1995-07-28 | 1998-01-13 | The Dow Chemical Company | 2,7-aryl-9-substituted fluorenes and 9-substituted fluorene oligomers and polymers |
| DE19543637A1 (de) | 1995-11-23 | 1997-05-28 | Basf Ag | Verwendung von in der plastisch-kolumnar diskotischen flüssigkristallinen Phase vorliegenden organischen Verbindungen zum Transport elektrischer Ladungen |
| US6309763B1 (en) | 1997-05-21 | 2001-10-30 | The Dow Chemical Company | Fluorene-containing polymers and electroluminescent devices therefrom |
| US5777070A (en) | 1997-10-23 | 1998-07-07 | The Dow Chemical Company | Process for preparing conjugated polymers |
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-
1999
- 1999-12-22 WO PCT/US1999/030612 patent/WO2000042668A1/en not_active Application Discontinuation
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Also Published As
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| KR100766288B1 (ko) | 2007-10-11 |
| TW463398B (en) | 2001-11-11 |
| EP1151484A1 (en) | 2001-11-07 |
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| WO2000042668A1 (en) | 2000-07-20 |
| CA2355869A1 (en) | 2000-07-20 |
| CN1167146C (zh) | 2004-09-15 |
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