CN1331226C - High voltage assembly structure with high static discharge protective tolerance capacity - Google Patents
High voltage assembly structure with high static discharge protective tolerance capacity Download PDFInfo
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- CN1331226C CN1331226C CNB2004100003241A CN200410000324A CN1331226C CN 1331226 C CN1331226 C CN 1331226C CN B2004100003241 A CNB2004100003241 A CN B2004100003241A CN 200410000324 A CN200410000324 A CN 200410000324A CN 1331226 C CN1331226 C CN 1331226C
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- 230000001681 protective effect Effects 0.000 title claims description 41
- 230000003068 static effect Effects 0.000 title description 7
- 238000010276 construction Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 19
- 238000009413 insulation Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims 12
- 238000000034 method Methods 0.000 description 5
- 230000001737 promoting effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention relates to a high voltage assembly structure with high electrostatic discharge (ESD) protecting and withdrawing capacity, which is suitable for being used in an electrostatic discharge protecting circuit. The ESD protecting assembly comprises a channel region, a drain electrode region and a source electrode region. The present invention is mainly characterized in that the width of the drain region varies along a longitudinal axis direction to ensure that the distances from side edges of the drain electrode region to corresponding side edges of the channel region are different, and a plurality of discharge corners are formed on the periphery of the drain electrode region to enhance the conductive efficiency of electrostatic discharge and the conduction uniformity.
Description
Technical field
The invention relates to a kind of electrostatic discharge protective assembly, be particularly to a kind of electrostatic discharge protective modular construction that is applied to high potential assembly.
Background technology
In semiconductor device, static discharge (ESD:electrostatic discharge) is gone into pad (I/O pad) intrusion because of touching the static electrification body from the output of chip through being everlasting under the dry environment, causes the integrated circuit damage.
When the CMOS process technique narrows down to time micron stage, advanced process technique, for example thinner grid oxic horizon, shorter passage length, more shallow drain/source connects the face degree of depth, LDD (low doping concentration drain electrode) structure, and metal silicide (silicided) diffusion layer etc., these advanced processing procedures seriously reduce the electro-static discharge protective ability of CMOS IC on the contrary, according to present industrial standard, end (I/O pad) is gone in the output of integrated circuit in the IC assembly needs to bear above the manikin ESD stress of 2000V and the mechanical model ESD model that surpasses 200V, therefore, in order to prevent that esd discharge from causing the infringement of IC internal circuit, damage to prevent ESD to ESD protection circuit or ESD guard assembly can be set between internal circuit at the output pad usually.
At present increasing automation and consumer electronic product are applied in the high pressure field, for example the ink gun drive IC promptly must be used high pressure manufacturing process, and be applied in the traditional E SD guard assembly structure of high-tension circuit, with N type metal-oxide half field effect transistor (NMOS) is example, it is shown in Fig. 1 a and Fig. 1 b, and Fig. 1 a is the transistorized vertical view of a known high pressure NMOS; Fig. 1 b then is the profile of Fig. 1 a along A-A ' tangent line; NMOS assembly 1 its source electrode N+ doped region 11 is to be coupled to earth terminal with gate pole 13; 12 of drain electrode N+ doped regions are coupled to output and go on the pad (I/O pad); below drain electrode N+ doped region 12, form a n type well region 14 in order to the conduct buffering; when static discharge takes place, protect internal circuit by the guiding (bypass) of parasitic NPN two-carrier transistor (lateral BJT).Yet the ESD electric current of concentrations can cause the damage of assembly.Because the principle of point discharge, electric current focuses mostly on and locates at the corner 120 (corner) of drain electrode N+ doped region 12, therefore can puncture (breakdown) earlier by corner 120 places earlier, current path is focused mostly in the corner, cause the problem of current lead-through path profile inequality.
No. 6258672 patent of United States Patent (USP) provides another kind of esd protection circuit; it includes at least one source electrode of reference voltage source, at least one drain electrode and at least one grid of exporting/going between pad and internal circuit that be connected to of being connected to; the width that it is characterized by the gate electrode zone is to be enlarged toward the both sides by central authorities, easily punctures the problem that causes the conducting inequality earlier by the corner but still can't solve electric charge.
Summary of the invention
In view of this, purpose of the present invention just is to provide a high electrostatic discharge (electrostaticdischarge, ESD) guard assembly structure, be not equidistant by drain region side edge to corresponding channel region side, make a plurality of discharge corners of the peripheral formation in drain region, to promote the uniformity that static discharge conducting usefulness and enhancement electrically conduct.
For reaching above-mentioned purpose, the invention provides an electrostatic discharge protective modular construction, be to comprise: a substrate; One channel region is formed on both allocations of this substrate surface, and this channel region has one first side and one second side; The one source pole zone is adjacent to this first side; One drain region, be adjacent to this second side, it is a light dope well region that comprises a heavily doped region and be formed at this heavily doped region below, wherein, the width of this heavily doped region is to change along a y direction, and a side that makes this heavily doped region to this second side of this channel region is not equidistant.
By the present invention, can make the drain region side form a plurality of discharge corners by the change width of heavily doped region in the drain region, current path is disperseed, reach the effect of promoting static discharge conducting usefulness and promoting the uniformity of conducting.
Description of drawings
Fig. 1 a is the vertical view of a known ESD high voltage protection assembly;
Fig. 1 b then is the profile of Fig. 1 a along A-A ' tangent line;
Shown in Fig. 2 a high electrostatic discharge of the present invention (electrostatic discharge, ESD) vertical view of modular construction first preferred embodiment of protective capacities;
Fig. 2 b is the profile of Fig. 2 a along B-B ' tangent line;
Fig. 2 c is the profile of Fig. 2 a along C-C ' tangent line;
Shown in Figure 3 is the vertical view of the present invention's second preferred embodiment;
Shown in Figure 4 is the vertical view of the present invention's the 3rd preferred embodiment;
Shown in Figure 5 is the vertical view of the present invention's the 4th preferred embodiment;
Shown in Figure 6 is the vertical view of the present invention's the 5th preferred embodiment;
Shown in Figure 7 is the vertical view of the present invention's the 6th preferred embodiment;
Fig. 8 a is the vertical view of seventh embodiment of the invention;
Fig. 8 b is the profile of Fig. 8 a along B-B ' tangent line;
Fig. 9 is the profile of eighth embodiment of the invention.
Symbol description:
The 1-ESD guard assembly; 11-source electrode N+ doped region;
12-drain electrode N+ doped region; The 13-channel region;
14-n type well region; 20,21-NMOS transistor;
The 2-substrate; 22,51-drain region;
23,50-source region; The 24-channel region;
The 240-grid structure;
220,220 ', 220 ", 222,222 ', 222 "-heavily doped region;
221-light dope well region;
25,25 ', 25 ", 27,27 ', 27 "-discharge corner;
40,41,42-active region.
Embodiment
It shown in Fig. 2 a the vertical view of the present invention one first embodiment; Fig. 2 b is the profile of Fig. 2 a along B-B ' tangent line; Fig. 2 c is the profile of Fig. 2 a along C-C ' tangent line, electrostatic discharge protective assembly in the present embodiment is the nmos pass transistor 20 that a finger-like (finger-type) is arranged, and it is to comprise a substrate 2, a drain region 22, be located at the source region 23 of 22 left and right sides, drain region and be located at drain region 22 and the channel region 24 of 23 of source regions.
This drain region 22 is N type doped regions, be to be coupled to output to go on the pad 3, it is the light dope well region 221 that comprises a heavily doped region 220 and be formed at heavily doped region 220 belows, wherein, 220 width of this heavily doped region are to change along a longitudinal axis Y direction in the first width a and between the second width b, make heavily doped region 220 form several trapezoidal protrusions in first side 2200 and second side 2201 corresponding to two channel regions 24, and form a plurality of discharge corners 25, at the periphery of heavily doped region 220 around being provided with shallow channel insulation layer (STI) 26.Above-mentioned two source regions 23 are N type doped regions, and it is to be coupled to earth terminal (GND), and below, two source regions then is a P type doped region (P-tube).Be formed with grid structure 240 on two channel regions 24, it is to be formed at respectively on substrate 2 surfaces of 220 of source region 23 and drain regions, and two grid structures 240 are to be couple to a power line or to be subjected to predrive circuit control (not shown).
Fig. 3 is the vertical view of the present invention one second embodiment, and its most of structure comprises the light dope well region 221 of drain region 22, shallow channel insulation layer 26; Source region 23 and channel region 24 are identical with last embodiment, do not repeat them here.Its main difference is the heavily doped region 220 ' protrude in forming several triangular shapes corresponding to the first side 2200 of two channel regions 24 and second side 2201 in drain region 22, make its have a plurality of discharge corners 25 '.
Fig. 4 is the vertical view of the present invention 1 the 3rd embodiment, and its most of structure comprises the light dope well region 221 of drain region 22, shallow channel insulation layer 26; Source region 23 and channel region 24 are identical with last embodiment, do not repeat them here.Its main difference is the heavily doped region 220 in drain region 22 " form several circular-arc protrusions in first side 2200 and second side 2201 corresponding to two channel regions 24, make it form a plurality of discharge corners 25 ".
Fig. 5 is the vertical view of the present invention 1 the 4th embodiment, and its most of structure comprises the light dope well region 221 of drain region 22, shallow channel insulation layer 26; Source region 23 and channel region 24 are identical with last embodiment, do not repeat them here.Its main difference is to include two heavily doped regions 222 in the drain region 22, and each heavily doped region 222 forms several trapezoidal protrusions in the side of contiguous corresponding channel region 24, makes it form a plurality of discharge corners 27.
Fig. 6 is the vertical view of the present invention 1 the 5th embodiment, and its most of assembly for example comprises the light dope well region 221 of drain region 22, shallow channel insulation layer 26; Source region 23 and channel region 24 are all identical with last embodiment, do not repeat them here, its main difference place be in drain region 22 two heavily doped regions 222 ' forming several triangular shapes in the side of contiguous corresponding channel region 24 protrudes, make its form a plurality of discharge corners 27 '.
Fig. 7 is the vertical view of the present invention 1 the 6th embodiment, and its most of assembly for example comprises the light dope well region 221 of drain region 22, shallow channel insulation layer 26; Source region 23 and channel region 24 are all identical with last embodiment, do not repeat them here, its main difference place is two heavily doped regions 222 in drain region 22 " side in contiguous corresponding channel region 24 forms several circular-arc protrusions, makes it form a plurality of discharge corners 27 ".
Shown in Fig. 8 a and Fig. 8 b, it is the vertical view of the present invention 1 the 7th embodiment and along the profile of B-B ' tangent line, it is to define active region 40,41 and 42 by an active formula mask (not looking among the figure), and then formation source region 23 reaches the heavily doped region 222 that forms drain region 22 on active region 41 on active region 40,42, and in the present embodiment, the dual-side of its heavily doped region 222 is trapezoidal, can be the structure of triangle, arc as described above also.Its insulating regions 26 do not contact (shown in Fig. 8 b) with heavily doped region 22.
The various embodiments described above for example P type MOS (metal-oxide-semiconductor) transistor (PMOS) are reached, if use the PMOS transistor as shown in Figure 9, then its source region 50 is a P type doped region; The heavily doped region 510 of drain region 51 and light dope well region 511 are P type doped region, and this substrate 52 is a N type doped substrate, and wherein source region 50 is to couple paramount power end (VDD), and 51 of drain regions are coupled to output and go on the pad (I/O pad).
Pass through the foregoing description, the present invention really can be by the change width of heavily doped region in the drain region, make the drain region side form a plurality of discharge corners, current path is disperseed, reach the effect of promoting static discharge conducting usefulness and promoting the uniformity of conducting.
Claims (30)
1, an electrostatic discharge protective modular construction comprises:
One substrate;
One channel region is formed on both allocations of this substrate surface, and this channel region has one first side and one second side;
The one source pole zone is adjacent to this first side; And
One drain region, be adjacent to this second side, it is a light dope well region that comprises a heavily doped region and be formed at this heavily doped region below, wherein, the width of this heavily doped region is to change along a y direction, and a side that makes this heavily doped region to this second side of this channel region is not equidistant.
2, electrostatic discharge protective modular construction according to claim 1 is characterized in that: this electrostatic discharge protective assembly is a N type metal-oxide semiconductor assembly, and wherein this source region is a N type doped region; This heavily doped region of this drain region and this light dope well region are that this substrate of N type doped region is a P type doped substrate.
3, electrostatic discharge protective modular construction according to claim 2 is characterized in that: this source region is to be coupled to an earth terminal, and this heavily doped zone is to be coupled to an output to go into pad.
4, electrostatic discharge protective modular construction according to claim 1 is characterized in that: this electrostatic discharge protective assembly is a P type metal-oxide semiconductor assembly, and wherein this source region is a P type doped region; This heavily doped region of this drain region and this light dope well region are P type doped regions, and this substrate is a N type doped substrate.
5, electrostatic discharge protective modular construction according to claim 4 is characterized in that: this source region is to be coupled to a high power end, and this heavily doped region is to be coupled to output to go on the pad.
6, electrostatic discharge protective modular construction according to claim 1 is characterized in that: between this heavily doped region and this channel region, further be provided with an insulating barrier.
7, electrostatic discharge protective modular construction according to claim 6 is characterized in that: this heavily doped region by this insulating barrier institute around, and this heavily doped region contacts with this insulating barrier.
8, electrostatic discharge protective modular construction according to claim 6 is characterized in that: this heavily doped region by this insulating barrier institute around, and this heavily doped region does not contact with this insulating barrier.
9, electrostatic discharge protective modular construction according to claim 8 is characterized in that: this insulating barrier is shallow channel insulation layer.
10. electrostatic discharge protective modular construction according to claim 1 is characterized in that: this side of this heavily doped region forms several trapezoidal protrusions.
11. electrostatic discharge protective modular construction according to claim 1 is characterized in that: this side of this heavily doped region forms several triangular shapes and protrudes.
12. electrostatic discharge protective modular construction according to claim 1 is characterized in that: this side of this heavily doped region forms several circular-arc protrusions.
13. electrostatic discharge protective modular construction according to claim 1 is characterized in that: this electrostatic discharge protective assembly has a plurality of channel regions and plurality of source regions territory, and this drain region is a shared drain electrode, to form a finger-like metal-oxide semiconductor.
14. electrostatic discharge protective modular construction according to claim 1 is characterized in that: this channel region is provided with grid structure, and this grid structure is couple to a power line or controlled by a predrive circuit.
15. a finger-like electrostatic discharge protective modular construction comprises:
One substrate;
Two source regions are formed on both allocations of this substrate surface;
One drain region is located between this source region, and this drain region has at least one heavily doped region and is formed at a light dope well region of this heavily doped region below;
Two channel regions, respectively this channel region is to be formed between a corresponding source region and this drain region; And
Wherein, the width of this heavily doped region is to change along a y direction, makes a side to this correspondence channel region of this heavily doped region be not equidistant.
16. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this electrostatic defending assembly is a N type metal-oxide semiconductor assembly, and respectively this source region is a N type doped region; This heavily doped region of this drain region and this light dope well region are N type doped regions, and this substrate is a P type doped substrate.
17. electrostatic discharge protective modular construction according to claim 16 is characterized in that: this source region is to be coupled to an earth terminal, and this heavily doped zone is to be coupled to an output to go into pad.
18. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this electrostatic defending assembly is a P type metal-oxide semiconductor assembly, and respectively this source region is a P type doped region; This heavily doped region of this drain region and this light dope well region are P type doped regions, and this substrate is a N type doped substrate.
19. electrostatic discharge protective modular construction according to claim 18 is characterized in that: respectively this source region is to be coupled to a high power end, and this heavily doped region is to be coupled to an output to go on the pad.
20. electrostatic discharge protective modular construction according to claim 15 is characterized in that: between this heavily doped region and this correspondence channel region, further be provided with an insulating barrier.
21. electrostatic discharge protective modular construction according to claim 20, this heavily doped region by this insulating barrier institute around, and this heavily doped region contacts with this insulating barrier.
22. electrostatic discharge protective modular construction according to claim 20, this heavily doped region by this insulating barrier institute around, and this heavily doped region does not contact with this insulating barrier.
23. electrostatic discharge protective modular construction according to claim 22 is characterized in that: this insulating barrier is shallow channel insulation layer.
24. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this drain region has single heavily doped region, and forms several trapezoidal protrusions in the first side and the second side of this heavily doped region.
25. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this drain region has single heavily doped region, and forms several triangular shapes protrusions in the first side and the second side of this heavily doped region.
26. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this drain region has single heavily doped region, and is formed with several circular-arc protrusions in the first side and the second side of this heavily doped region.
27. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this drain region has two heavily doped regions, and forms several trapezoidal protrusions in this heavily doped region respectively in the side of contiguous channel region.
28. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this drain region has two heavily doped regions, and the side in this heavily doped region respectively in contiguous channel region forms several triangular shapes and protrudes.
29. electrostatic discharge protective modular construction according to claim 15 is characterized in that: this drain region has two heavily doped regions, and forms several circular-arc protrusions in this heavily doped region respectively in the side of contiguous channel region.
30. electrostatic discharge protective modular construction according to claim 15 is characterized in that: respectively this channel region is provided with grid structure, and this grid structure is couple to a power line or controlled by a predrive circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100003241A CN1331226C (en) | 2004-01-07 | 2004-01-07 | High voltage assembly structure with high static discharge protective tolerance capacity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100003241A CN1331226C (en) | 2004-01-07 | 2004-01-07 | High voltage assembly structure with high static discharge protective tolerance capacity |
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| CN1641872A CN1641872A (en) | 2005-07-20 |
| CN1331226C true CN1331226C (en) | 2007-08-08 |
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| CNB2004100003241A Expired - Lifetime CN1331226C (en) | 2004-01-07 | 2004-01-07 | High voltage assembly structure with high static discharge protective tolerance capacity |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244070B (en) * | 2010-05-11 | 2015-04-15 | 立锜科技股份有限公司 | Structure for providing electro-static discharge (ESD) protection for high-voltage path of ultra-high voltage assembly |
| CN103400839B (en) * | 2013-08-14 | 2016-03-02 | 上海华力微电子有限公司 | High pressure ESD device domain structure and comprise the chip of this domain structure |
| CN104916631B (en) * | 2014-03-11 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN107564961B (en) * | 2016-06-30 | 2020-05-12 | 无锡华润上华科技有限公司 | Metal oxide semiconductor field effect transistor with electrostatic protection structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06204241A (en) * | 1993-01-06 | 1994-07-22 | Mitsubishi Electric Corp | Field effect transistor and manufacture thereof |
| US5894150A (en) * | 1997-12-08 | 1999-04-13 | Magepower Semiconductor Corporation | Cell density improvement in planar DMOS with farther-spaced body regions and novel gates |
| CN1377087A (en) * | 2001-03-23 | 2002-10-30 | 矽统科技股份有限公司 | Arrangement method with uniformly distributed current for preventing electrostatic discharge |
| CN1414639A (en) * | 2001-10-22 | 2003-04-30 | 联华电子股份有限公司 | Silicon rectifier set in silicon covered insulator and its application circuit |
| CN1438705A (en) * | 2002-02-10 | 2003-08-27 | 台湾积体电路制造股份有限公司 | Diode structure and its electrostatic discharge protection circuit |
| JP2003273349A (en) * | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | Method for manufacturing semiconductor device |
-
2004
- 2004-01-07 CN CNB2004100003241A patent/CN1331226C/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06204241A (en) * | 1993-01-06 | 1994-07-22 | Mitsubishi Electric Corp | Field effect transistor and manufacture thereof |
| US5894150A (en) * | 1997-12-08 | 1999-04-13 | Magepower Semiconductor Corporation | Cell density improvement in planar DMOS with farther-spaced body regions and novel gates |
| CN1377087A (en) * | 2001-03-23 | 2002-10-30 | 矽统科技股份有限公司 | Arrangement method with uniformly distributed current for preventing electrostatic discharge |
| CN1414639A (en) * | 2001-10-22 | 2003-04-30 | 联华电子股份有限公司 | Silicon rectifier set in silicon covered insulator and its application circuit |
| CN1438705A (en) * | 2002-02-10 | 2003-08-27 | 台湾积体电路制造股份有限公司 | Diode structure and its electrostatic discharge protection circuit |
| JP2003273349A (en) * | 2002-03-15 | 2003-09-26 | Seiko Epson Corp | Method for manufacturing semiconductor device |
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