CN1327296C - 包括二次电子清除单元的平版印刷投影装置 - Google Patents

包括二次电子清除单元的平版印刷投影装置 Download PDF

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Publication number
CN1327296C
CN1327296C CNB2003101196105A CN200310119610A CN1327296C CN 1327296 C CN1327296 C CN 1327296C CN B2003101196105 A CNB2003101196105 A CN B2003101196105A CN 200310119610 A CN200310119610 A CN 200310119610A CN 1327296 C CN1327296 C CN 1327296C
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CN
China
Prior art keywords
radiation
target
lithographic projection
electrode
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2003101196105A
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English (en)
Chinese (zh)
Other versions
CN1497358A (zh
Inventor
R·库尔特
L·P·巴克
F·J·P·舒尔曼斯
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ASML Netherlands BV
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ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of CN1497358A publication Critical patent/CN1497358A/zh
Application granted granted Critical
Publication of CN1327296C publication Critical patent/CN1327296C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB2003101196105A 2002-10-18 2003-10-17 包括二次电子清除单元的平版印刷投影装置 Expired - Fee Related CN1327296C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02079329.5 2002-10-18
EP02079329 2002-10-18

Publications (2)

Publication Number Publication Date
CN1497358A CN1497358A (zh) 2004-05-19
CN1327296C true CN1327296C (zh) 2007-07-18

Family

ID=32668752

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101196105A Expired - Fee Related CN1327296C (zh) 2002-10-18 2003-10-17 包括二次电子清除单元的平版印刷投影装置

Country Status (7)

Country Link
US (1) US6791665B2 (enExample)
JP (1) JP4058404B2 (enExample)
KR (1) KR100544357B1 (enExample)
CN (1) CN1327296C (enExample)
DE (1) DE60323584D1 (enExample)
SG (1) SG115575A1 (enExample)
TW (1) TWI294995B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
US7800079B2 (en) * 2003-12-22 2010-09-21 Asml Netherlands B.V. Assembly for detection of radiation flux and contamination of an optical component, lithographic apparatus including such an assembly and device manufacturing method
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US7629594B2 (en) * 2006-10-10 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
US7825390B2 (en) * 2007-02-14 2010-11-02 Asml Netherlands B.V. Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus
JP2010257998A (ja) * 2007-11-26 2010-11-11 Nikon Corp 反射投影光学系、露光装置、及びデバイスの製造方法
NL1036769A1 (nl) * 2008-04-23 2009-10-26 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device.
DE102013218748A1 (de) * 2013-09-18 2014-10-02 Carl Zeiss Smt Gmbh Optisches Bauelement
EP3953766A1 (en) * 2019-04-09 2022-02-16 Kulicke & Soffa Liteq B.V. Lithographic systems and methods of operating the same
KR102829107B1 (ko) * 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
CN115210970B (zh) * 2020-03-03 2025-09-12 西默有限公司 用于光源的控制系统
JP6844798B1 (ja) * 2020-05-26 2021-03-17 レーザーテック株式会社 光学装置、及び光学装置の汚染防止方法
CN118265951A (zh) * 2021-11-25 2024-06-28 Asml荷兰有限公司 一种光学装置、照射系统、投影系统、euv辐射源、光刻设备、污染沉积防止方法以及光学部件翻新方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
CN1332055A (zh) * 2000-07-07 2002-01-23 海德堡印刷机械股份公司 用超短激光脉冲在印版上制作图象
EP1182510A1 (en) * 2000-08-25 2002-02-27 Asm Lithography B.V. Lithographic projection apparatus and mask handling device
EP1223468A1 (en) * 2001-01-10 2002-07-17 ASML Netherlands BV Lithographic projection Apparatus and device manufacturing method
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
GB0031194D0 (en) 2000-12-21 2001-01-31 Eastman Kodak Co Processing photographic material
DE10138284A1 (de) 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
CN1332055A (zh) * 2000-07-07 2002-01-23 海德堡印刷机械股份公司 用超短激光脉冲在印版上制作图象
EP1182510A1 (en) * 2000-08-25 2002-02-27 Asm Lithography B.V. Lithographic projection apparatus and mask handling device
US20020109828A1 (en) * 2000-08-25 2002-08-15 Moors Johannes Hubertus Josephina Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
EP1223468A1 (en) * 2001-01-10 2002-07-17 ASML Netherlands BV Lithographic projection Apparatus and device manufacturing method

Also Published As

Publication number Publication date
US20040130694A1 (en) 2004-07-08
KR20040034524A (ko) 2004-04-28
CN1497358A (zh) 2004-05-19
TWI294995B (en) 2008-03-21
JP2004289120A (ja) 2004-10-14
TW200424784A (en) 2004-11-16
SG115575A1 (en) 2005-10-28
KR100544357B1 (ko) 2006-01-23
JP4058404B2 (ja) 2008-03-12
DE60323584D1 (de) 2008-10-30
US6791665B2 (en) 2004-09-14

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070718

Termination date: 20211017

CF01 Termination of patent right due to non-payment of annual fee