TWI294995B - Lithographic projection apparatus comprising a secondary electron removal unit - Google Patents

Lithographic projection apparatus comprising a secondary electron removal unit Download PDF

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Publication number
TWI294995B
TWI294995B TW092128890A TW92128890A TWI294995B TW I294995 B TWI294995 B TW I294995B TW 092128890 A TW092128890 A TW 092128890A TW 92128890 A TW92128890 A TW 92128890A TW I294995 B TWI294995 B TW I294995B
Authority
TW
Taiwan
Prior art keywords
radiation
projection
voltage
source
electrode
Prior art date
Application number
TW092128890A
Other languages
English (en)
Chinese (zh)
Other versions
TW200424784A (en
Inventor
Ralph Kurt
Levinus Pieter Bakker
Frank Jeroen Pieter Schuurmans
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200424784A publication Critical patent/TW200424784A/zh
Application granted granted Critical
Publication of TWI294995B publication Critical patent/TWI294995B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW092128890A 2002-10-18 2003-10-17 Lithographic projection apparatus comprising a secondary electron removal unit TWI294995B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02079329 2002-10-18

Publications (2)

Publication Number Publication Date
TW200424784A TW200424784A (en) 2004-11-16
TWI294995B true TWI294995B (en) 2008-03-21

Family

ID=32668752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092128890A TWI294995B (en) 2002-10-18 2003-10-17 Lithographic projection apparatus comprising a secondary electron removal unit

Country Status (7)

Country Link
US (1) US6791665B2 (enExample)
JP (1) JP4058404B2 (enExample)
KR (1) KR100544357B1 (enExample)
CN (1) CN1327296C (enExample)
DE (1) DE60323584D1 (enExample)
SG (1) SG115575A1 (enExample)
TW (1) TWI294995B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US7135692B2 (en) * 2003-12-04 2006-11-14 Asml Netherlands B.V. Lithographic apparatus, illumination system and method for providing a projection beam of EUV radiation
US7800079B2 (en) * 2003-12-22 2010-09-21 Asml Netherlands B.V. Assembly for detection of radiation flux and contamination of an optical component, lithographic apparatus including such an assembly and device manufacturing method
US7279690B2 (en) * 2005-03-31 2007-10-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
US7629594B2 (en) * 2006-10-10 2009-12-08 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
US7825390B2 (en) * 2007-02-14 2010-11-02 Asml Netherlands B.V. Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus
JP2010257998A (ja) * 2007-11-26 2010-11-11 Nikon Corp 反射投影光学系、露光装置、及びデバイスの製造方法
NL1036769A1 (nl) * 2008-04-23 2009-10-26 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, cleaning system and method for cleaning a patterning device.
DE102013218748A1 (de) * 2013-09-18 2014-10-02 Carl Zeiss Smt Gmbh Optisches Bauelement
EP3953766A1 (en) * 2019-04-09 2022-02-16 Kulicke & Soffa Liteq B.V. Lithographic systems and methods of operating the same
KR102829107B1 (ko) * 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
CN115210970B (zh) * 2020-03-03 2025-09-12 西默有限公司 用于光源的控制系统
JP6844798B1 (ja) * 2020-05-26 2021-03-17 レーザーテック株式会社 光学装置、及び光学装置の汚染防止方法
CN118265951A (zh) * 2021-11-25 2024-06-28 Asml荷兰有限公司 一种光学装置、照射系统、投影系统、euv辐射源、光刻设备、污染沉积防止方法以及光学部件翻新方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
JP2000100685A (ja) 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
CA2349912A1 (en) * 2000-07-07 2002-01-07 Heidelberger Druckmaschinen Aktiengesellschaft Setting an image on a printing plate using ultrashort laser pulses
EP1182510B1 (en) 2000-08-25 2006-04-12 ASML Netherlands B.V. Lithographic projection apparatus
US6781673B2 (en) * 2000-08-25 2004-08-24 Asml Netherlands B.V. Mask handling apparatus, lithographic projection apparatus, device manufacturing method and device manufactured thereby
GB0031194D0 (en) 2000-12-21 2001-01-31 Eastman Kodak Co Processing photographic material
EP1223468B1 (en) * 2001-01-10 2008-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
DE10138284A1 (de) 2001-08-10 2003-02-27 Zeiss Carl Beleuchtungssystem mit genesteten Kollektoren

Also Published As

Publication number Publication date
US20040130694A1 (en) 2004-07-08
KR20040034524A (ko) 2004-04-28
CN1497358A (zh) 2004-05-19
JP2004289120A (ja) 2004-10-14
CN1327296C (zh) 2007-07-18
TW200424784A (en) 2004-11-16
SG115575A1 (en) 2005-10-28
KR100544357B1 (ko) 2006-01-23
JP4058404B2 (ja) 2008-03-12
DE60323584D1 (de) 2008-10-30
US6791665B2 (en) 2004-09-14

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees