CN1327283A - Photon crystal micro cavity structure - Google Patents
Photon crystal micro cavity structure Download PDFInfo
- Publication number
- CN1327283A CN1327283A CN 00107987 CN00107987A CN1327283A CN 1327283 A CN1327283 A CN 1327283A CN 00107987 CN00107987 CN 00107987 CN 00107987 A CN00107987 A CN 00107987A CN 1327283 A CN1327283 A CN 1327283A
- Authority
- CN
- China
- Prior art keywords
- photon crystal
- cavity structure
- wave
- point defect
- guide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The present invention relates to microwave and laser device, and especially micro cavity laser. The present invention constitutes photon crystal micro cavity by utilizing point faults and linear faults and the point faults and the stimulating medium inside the faults constitute active resonant cavity. By regulating the distance between the point fault and the linear fault second the number of the "atoms" in between, the radiation energy inside the resonant avity may be coupled to waveguide in almost 100 %. The present invention makes it possible to concentrate the radiation energy to any position inside the waveguide and may be applied in the design of cavity for semiconductor laser and the light source and waveguide for integrated light path.
Description
The present invention relates to microwave and light wave Amplifier Based On Stimulated Emission Of Radiation spare, particularly micro-cavity laser.
Micro-cavity laser can be controlled the spontaneous radiation of exciting media effectively because volume is little, has high energy conversion efficiency, and causes extensive concern both domestic and external.Micro-cavity structure based on photonic crystal not only has above-mentioned advantage, and can realize high Q value and high radiation enhancer, thereby can realize higher energy conversion efficiency, and people propose various photon crystal micro cavity structures recently.The simplyst a kind ofly in photonic crystal, remove one or more formation photonic crystals " atom " and fill to go up one or more exciting medias " document 1; E.Yablonovitch; T.J.Gmitter, R.D.Meade, A.M.Rappe; K.D.Brommer; and J.D.Joannopoulos are subjected to main mould and alms giver's mould, physical comment bulletin in the photon band structure; 67 (24), 3380 (1999) ".This atom is for the structure of photonic crystal.Such as the three-D photon crystal that is made of spherical dielectric, its atom is a dielectric spheres etc.Because the angle of the radiation mode of this micro-cavity structure distributes and directivity is all very poor, so people have done further improvement " document 2; G.Tayeb and D.Maystre; the strict theoretical research of the limited big photonic crystal of doping microcavity, the meeting will A of Optical Society of America, 14; 3323 (1997) " again to this, change the lattice constant of photonic crystal slightly in the microcavity district, radiant energy can radiate with very narrow angle, and its structure as shown in Figure 1.Another kind method is seen Fig. 2 " document 3, O.Painter, P.K.Lee; A.Schere, A.Yariv, J.D.O ' Brien; P.D.Dapkus, I.Kim, two-dimensional photon band gap defective mode laser; science, 284,1819 (1999) ", in the hexagon photonic crystal, when extracting a cylinder, make other two cylinders become big by defective, make the chamber mould division of degeneracy, thereby realize narrow radiation angle.But this method can not realize narrower directed radiation, and can not freely control the output of radiant light, still has very big leakage loss.The energy of the leakage of above-mentioned photon crystal micro cavity structure is still considerable, and can not be in photonic crystal freely direct electromagnetic radiation with certain direction output, and this basis of the application of photonic crystal in microwave integrated circuit and full light integrated optical circuit just.On the other hand, the photon crystal wave-guide that constitutes by photon crystal linear defect can guide electromagnetic waves before the waveguide of bending 90 and then have the efficient close " document 4; A.Mekis; J.C.Chen; I.Kurland; S.Fan; P.R.Villeneuve, andJ.D.Joannopoulos, a high permeability of the sharp-pointed bending part of photon crystal wave-guide with straight wave guide, physical comment bulletin, 77,3787 (1996) ", but since the diameter of photon crystal wave-guide less than wavelength; thereby energy being coupled in the photon crystal wave-guide, also is a challenging problem.
The objective of the invention is to overcome the deficiency of prior art, by being combined together to form a kind of new micro-cavity structure waveguide (line defect) with by the resonant cavity that point defect constitutes, thereby the radiant energy that makes the resonant cavity that is made of point defect outputs to any position of photonic crystal, simultaneously with extremely narrow radiation angle output, thereby can reduce the leakage energy, increase the efficient of microcavity.
Photon crystal micro cavity structure of the present invention is made up of the point defect and the line defect (photon crystal wave-guide) of photonic crystal.
A kind of basic structure of 2 D photon crystal microcavity is seen Fig. 3, and filled circles is represented medium post (" atom " of promptly forming photonic crystal), constitutes cyclic array, is called photonic crystal.Open circles represents that the medium post is taken out, thereby constitutes point defect; Simultaneously, near the point defect place, take out a row or number row medium post, and form photon crystal wave-guide.Exciting media is mixed at the place in point defect, thereby forms resonant cavity, and this moment, the radiant energy more than 90% will enter waveguide.Because photon crystal wave-guide can make light wave turn round before the waveguides of 90 degree and then still have the efficient similar with straight wave guide along one, thus this photon crystal micro cavity that constitutes by point defect and line defect (photon crystal wave-guide) can make radiated wave along any direction with very narrow radiation angle output be bordering on zero leakage loss.Adjust the number of " atom " of distance between waveguide and the point defect and existence, can obtain the photon crystal micro cavity of different Q value.Surround the photonic crystal point defect photonic crystal array the more, the energy of leakage is littler, the efficient of photonic crystal is higher.This photon crystal micro cavity can be used for the design of semiconductor micro-cavity lasers and the fields such as light source of full light integrated optical circuit.
Have certain distance between point defect and the photon crystal wave-guide, they are separated by scattering object.This scattering object can be the atom that constitutes photonic crystal, also can be various scattering objects.
The photon crystal wave-guide (line defect) that constitutes photon crystal micro cavity can be that straight wave guide also can be a waveguide bend.
Point defect can be that to take out " atom " that constitutes photonic crystal also can be a plurality of " atoms ".
A kind of expansion structure of this 2 D photon crystal microcavity that is made of point defect and line defect as shown in Figure 4.On Fig. 3 basis, add two multilayer films in axial (upper and lower surface) of photonic crystal, to stop light from axial effusion, make light all directions (except that wave guide direction) all by localization in the chamber.The normal direction of multilayer film is axial consistent with formation photonic crystal medium post.
The basic structure of this photon crystal micro cavity in three-D photon crystal as shown in Figure 5.
The photon crystal micro cavity that is made of waveguide and point defect that the present invention proposes has high Q value, and leakage loss can accomplish to be less than 1%.The present invention can make the radiant energy of resonant cavity focus in the waveguide and the guiding optional position, can be used on the light source and waveguide design of the cavity of semiconductor laser and integrated optical circuit.
The present invention will be further described below in conjunction with drawings and Examples:
Fig. 1: 2 D photon crystal defective sectional view, wherein filled circles is represented medium post (promptly constituting " atom " of photonic crystal), remainder is represented another kind of medium.
Fig. 2: a kind of photon crystal micro cavity structure that radiation laser beam is narrowed down.
Fig. 3: the 2 D photon crystal microcavity sectional view that constitutes by waveguide and point defect.
Fig. 4: the expansion structure schematic diagram of 2 D photon crystal microcavity.
Fig. 5: three-D photon crystal microcavity schematic diagram.
Fig. 6: be flowing and the relation of frequency of photon crystal micro cavity shown in Figure 3, wherein lattice constant is 11mm, and cylindrical radius is 2.044mm, and cylinder and background dielectric constant are respectively 8.9 and 1.04.
Fig. 7: the photon crystal micro cavity sectional view of forming by point defect and waveguide bend.
Fig. 8: be flowing and the relation of frequency of photon crystal micro cavity shown in Figure 7, wherein lattice constant is 11mm, and cylindrical radius is 2.044mm, and cylinder and background dielectric constant are respectively 8.9 and 1.04.
Wherein: 1 point defect district; 2 constitute the atom of photonic crystal; 3 photon crystal wave-guides; 4 multilayer films; 5 have the 2 D photon crystal (its structure such as Fig. 3) of point defect and line defect; 6 expression monoblock three-D photon crystals.
Embodiment 1:
As shown in Figure 3, exciting media is mixed at the place in point defect, and then point defect and exciting media have constituted a resonant cavity, and the electromagnetic wave of radiation is directly coupled in the line defect (photon crystal wave-guide).In numerical simulation, we replace exciting media with line source, calculate electromagnetic can stream at the waveguide port of export.With remaining electromagnetism energy flow of wave addition, claim that this part is to leak to flow simultaneously.Fig. 6 is the relation of electromagnetism energy flow of wave and frequency, and wherein solid line is represented can flow from the waveguide port of export is detected, and dotted line is represented to leak and can be flowed.Find out that thus in this photon crystal micro cavity, the energy more than 95% is all from waveguide mouth output, and the energy that leaks is close to and ignores.
Embodiment 2:
The photon crystal micro cavity of forming by point defect and waveguide bend as shown in Figure 7, wherein stain is represented dielectric cylinder, point defect is made of 4 dielectric cylinders taking out wherein, and waveguide is a waveguide bend, is separated by 4 cylinders between waveguide and the point defect.The result of calculation that its microcavity radiant flux distributes as shown in Figure 8, wherein solid line represent from the waveguide port of export is detected can stream, and dotted line is represented to leak and can be flowed.As seen the energy of Guo Louing also can be ignored, illustrate this microcavity that constitutes by waveguide and point defect can be with the electromagnetic energy of its radiation from any orientation of photonic crystal with extremely narrow radiation angle be bordering on zero leakage energy output.
Embodiment 3:
As shown in Figure 4, the upper and lower of 2 D photon crystal microcavity all plates multilayer film, and wherein the normal direction of multilayer film and formation photonic crystal medium post is axial consistent.Such purpose is to stop electromagnetic wave energy from axial effusion, thereby further improves the efficient of microcavity.
Embodiment 4:
As shown in Figure 5, in three-D photon crystal, take out corresponding " atom ", thereby constitute a defect cavity, in defective, charge into exciting media, further open a waveguide, so just the electromagnetism wave energy that excites can be drawn from waveguide fully on the next door of defective.This employing three-D photon crystal constitutes the described microcavity of patent and has the highest efficient.
Claims (6)
1, a kind of photon crystal micro cavity structure is characterized in that: point defect and line defect (or photon crystal wave-guide) by photonic crystal are formed: 2 D photon crystal microcavity as shown in Figure 3, one " atom " forming photonic crystal taken out the formation point defect; Taking out a row or number row medium post formation photon crystal wave-guide near the point defect place; Mix exciting media at the point defect place and form resonant cavity.
2, by the described photon crystal micro cavity structure of claim 1, it is characterized in that: as shown in Figure 4, can also add two multilayer films on the axial upper and lower surface of photonic crystal, make light all directions (except that wave guide direction) all by localization in the chamber, the normal direction of multilayer film with constitute the axial consistent of photonic crystal medium post.
3, by the described photon crystal micro cavity structure of claim 1, it is characterized in that: can also make the three-D photon crystal micro-cavity structure, as shown in Figure 5.
4, by the described photon crystal micro cavity structure of claim 1, it is characterized in that: have certain distance between point defect and the photon crystal wave-guide, they are separated by scattering object, and this scattering object can be the atom that constitutes photonic crystal.
5, by the described photon crystal micro cavity structure of claim 1, it is characterized in that: photon crystal wave-guide can be that straight wave guide also can be a waveguide bend.
6, by the described photon crystal micro cavity structure of claim 1, it is characterized in that: point defect can also be to take out a plurality of " atom " to constitute.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB001079875A CN1156063C (en) | 2000-06-06 | 2000-06-06 | Photon crystal micro cavity structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB001079875A CN1156063C (en) | 2000-06-06 | 2000-06-06 | Photon crystal micro cavity structure |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1327283A true CN1327283A (en) | 2001-12-19 |
CN1156063C CN1156063C (en) | 2004-06-30 |
Family
ID=4579076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001079875A Expired - Fee Related CN1156063C (en) | 2000-06-06 | 2000-06-06 | Photon crystal micro cavity structure |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1156063C (en) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100337132C (en) * | 2003-03-26 | 2007-09-12 | Tdk株式会社 | Two-dimensional photonic crystal, and waveguide and resonator using the same |
CN100355160C (en) * | 2005-11-23 | 2007-12-12 | 中国科学院上海技术物理研究所 | Gallium nitride base photor crystal laser diode |
CN100363766C (en) * | 2002-12-06 | 2008-01-23 | 独立行政法人科学技术振兴机构 | Two-dimensional photonic crystal slab having local three-dimensional structure |
CN100375352C (en) * | 2005-08-31 | 2008-03-12 | 中国科学院半导体研究所 | Silicon based photon crystal micro-cavity Raman laser structure |
CN100391061C (en) * | 2003-03-17 | 2008-05-28 | 京都大学长 | Two dimension photo crystal resonating chamber and channel divided inserting filter |
CN100394228C (en) * | 2003-08-29 | 2008-06-11 | 独立行政法人科学技术振兴机构 | Two-dimensional photonic crystal multiplexer/demultiplexer |
CN100394229C (en) * | 2003-08-29 | 2008-06-11 | 国立大学法人京都大学 | 2-dimensional photonic crystal having air bridge structure and its manufacturing method |
CN100399656C (en) * | 2005-05-31 | 2008-07-02 | 中国科学院半导体研究所 | Wave-guide distributed feed back laser of photon crystal, and fabricating method |
CN100401544C (en) * | 2006-06-30 | 2008-07-09 | 中国科学院上海技术物理研究所 | Disk type array in monochromatic source based on gallium nitride base |
CN100424236C (en) * | 2005-12-07 | 2008-10-08 | 中国科学院半导体研究所 | Two-dimensional photonic crystal with large absolute band gap |
CN100433473C (en) * | 2003-03-25 | 2008-11-12 | 独立行政法人科学技术振兴机构 | Two-dimensional photonic crystal surface-emitting laser |
CN100456583C (en) * | 2004-03-05 | 2009-01-28 | 国立大学法人京都大学 | Two-dimensional photonic crystal surface-emitting laser light source |
CN101203783B (en) * | 2005-06-21 | 2010-10-27 | 惠普开发有限公司 | Integrated circuit device having optically coupled layers |
CN1703805B (en) * | 2002-10-11 | 2011-11-23 | 汤姆森许可贸易公司 | Slot-type antennas adopting a photonic bandgap structure |
CN102353652A (en) * | 2011-07-12 | 2012-02-15 | 中山大学 | Chemical refractive index sensor and design method thereof |
CN105022116A (en) * | 2015-07-24 | 2015-11-04 | 南昌航空大学 | All-optical diode structure employing two cavities of side edges of photonic crystal waveguide |
CN105191029A (en) * | 2013-03-08 | 2015-12-23 | 国立研究开发法人科学技术振兴机构 | Two-dimensional photonic crystal surface-emitting laser |
CN108562973A (en) * | 2018-03-29 | 2018-09-21 | 华南理工大学 | Nonreciprocal light transmitting device based on photonic crystal and nonreciprocal optical transmission method |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100541147C (en) * | 2006-09-22 | 2009-09-16 | 中国科学院半导体研究所 | A kind of measuring method of slowing light velocity effect of photon crystal and measurement mechanism |
US7561761B2 (en) * | 2007-01-03 | 2009-07-14 | Hewlett-Packard Development Company, L.P. | Photonic systems and methods for encoding data in carrier electromagnetic waves |
CN102565935B (en) * | 2012-01-31 | 2014-04-16 | 中国科学院长春光学精密机械与物理研究所 | Resonant-coupling two-way transmission photon crystal waveguide and manufacturing method thereof |
-
2000
- 2000-06-06 CN CNB001079875A patent/CN1156063C/en not_active Expired - Fee Related
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1703805B (en) * | 2002-10-11 | 2011-11-23 | 汤姆森许可贸易公司 | Slot-type antennas adopting a photonic bandgap structure |
CN100363766C (en) * | 2002-12-06 | 2008-01-23 | 独立行政法人科学技术振兴机构 | Two-dimensional photonic crystal slab having local three-dimensional structure |
CN100391061C (en) * | 2003-03-17 | 2008-05-28 | 京都大学长 | Two dimension photo crystal resonating chamber and channel divided inserting filter |
CN100433473C (en) * | 2003-03-25 | 2008-11-12 | 独立行政法人科学技术振兴机构 | Two-dimensional photonic crystal surface-emitting laser |
CN100337132C (en) * | 2003-03-26 | 2007-09-12 | Tdk株式会社 | Two-dimensional photonic crystal, and waveguide and resonator using the same |
CN100394228C (en) * | 2003-08-29 | 2008-06-11 | 独立行政法人科学技术振兴机构 | Two-dimensional photonic crystal multiplexer/demultiplexer |
CN100394229C (en) * | 2003-08-29 | 2008-06-11 | 国立大学法人京都大学 | 2-dimensional photonic crystal having air bridge structure and its manufacturing method |
CN100456583C (en) * | 2004-03-05 | 2009-01-28 | 国立大学法人京都大学 | Two-dimensional photonic crystal surface-emitting laser light source |
CN100399656C (en) * | 2005-05-31 | 2008-07-02 | 中国科学院半导体研究所 | Wave-guide distributed feed back laser of photon crystal, and fabricating method |
CN101203783B (en) * | 2005-06-21 | 2010-10-27 | 惠普开发有限公司 | Integrated circuit device having optically coupled layers |
CN100375352C (en) * | 2005-08-31 | 2008-03-12 | 中国科学院半导体研究所 | Silicon based photon crystal micro-cavity Raman laser structure |
CN100355160C (en) * | 2005-11-23 | 2007-12-12 | 中国科学院上海技术物理研究所 | Gallium nitride base photor crystal laser diode |
CN100424236C (en) * | 2005-12-07 | 2008-10-08 | 中国科学院半导体研究所 | Two-dimensional photonic crystal with large absolute band gap |
CN100401544C (en) * | 2006-06-30 | 2008-07-09 | 中国科学院上海技术物理研究所 | Disk type array in monochromatic source based on gallium nitride base |
CN102353652A (en) * | 2011-07-12 | 2012-02-15 | 中山大学 | Chemical refractive index sensor and design method thereof |
CN102353652B (en) * | 2011-07-12 | 2013-09-18 | 中山大学 | Chemical refractive index sensor and design method thereof |
CN105191029A (en) * | 2013-03-08 | 2015-12-23 | 国立研究开发法人科学技术振兴机构 | Two-dimensional photonic crystal surface-emitting laser |
CN105191029B (en) * | 2013-03-08 | 2018-01-09 | 国立研究开发法人科学技术振兴机构 | Two-dimensional photonic crystal surface-emitting laser |
CN105022116A (en) * | 2015-07-24 | 2015-11-04 | 南昌航空大学 | All-optical diode structure employing two cavities of side edges of photonic crystal waveguide |
CN105022116B (en) * | 2015-07-24 | 2017-10-03 | 南昌航空大学 | Photonic crystal waveguide side two-chamber all-optical diode structure |
CN108562973A (en) * | 2018-03-29 | 2018-09-21 | 华南理工大学 | Nonreciprocal light transmitting device based on photonic crystal and nonreciprocal optical transmission method |
CN108562973B (en) * | 2018-03-29 | 2023-06-20 | 华南理工大学 | Photonic crystal-based nonreciprocal light transmission device and nonreciprocal light transmission method |
Also Published As
Publication number | Publication date |
---|---|
CN1156063C (en) | 2004-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1156063C (en) | Photon crystal micro cavity structure | |
US6574383B1 (en) | Input light coupler using a pattern of dielectric contrast distributed in at least two dimensions | |
Chutinan et al. | Surface-emitting channel drop filters using single defects in two-dimensional photonic crystal slabs | |
TWI274199B (en) | Optically coupling into highly uniform waveguides | |
US5418880A (en) | High-power optical fiber amplifier or laser device | |
CN207782132U (en) | A kind of Solid State Laser array beam merging apparatus | |
EP1668401A1 (en) | Beam combination using interleaved optical plates | |
WO2008117249A1 (en) | Integrated optical waveguide amplifier or laser with rare earth ions and sensitizer elements co-doped core and related optical pumping method | |
CN103915758A (en) | Terahertz quantum cascade laser of multiple-mode interface structure and manufacturing method thereof | |
CA2064726C (en) | Monolithic semiconductor harmonic laser sources | |
CN104570206A (en) | Beam splitting method based on photonic crystal standing wave resonance | |
CN110068889A (en) | A kind of super surface duct coupler of silicon substrate artificial micro-structure | |
US6470127B2 (en) | Photonic band-gap light-emitting fibers | |
CN102087383B (en) | Two-dimensional photonic crystal T-shaped waveguide based on surface state of photonic crystals | |
Asano et al. | Investigation of a channel-add/drop-filtering device using acceptor-type point defects in a two-dimensional photonic-crystal slab | |
CN101710669B (en) | Double-output end face pumping all-solid-state laser | |
KR101944434B1 (en) | Resonantly enhanced frequency converter | |
CN102419479B (en) | Two-stage beam shrinkage system based on photonic crystal resonant cavity | |
CN105470792B (en) | Two core of high power is total to cavity optical fibre laser | |
Wu et al. | A traveling-wave forward coupler design for a new accelerating mode in a silicon woodpile accelerator | |
JP2007047694A (en) | Optical transmission line and optical element possessing the same | |
CN106444213B (en) | A kind of integrated form surface phasmon logic circuit | |
JP3921987B2 (en) | Photonic crystal waveguide and manufacturing method thereof | |
CN103337787A (en) | Sunlight pumped semiconductor nanowire laser | |
CN102520522B (en) | Multi-stage two-dimensional photonic crystal beam compression device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040630 |