CN100375352C - Silicon based photon crystal micro-cavity Raman laser structure - Google Patents
Silicon based photon crystal micro-cavity Raman laser structure Download PDFInfo
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- CN100375352C CN100375352C CNB200510086312XA CN200510086312A CN100375352C CN 100375352 C CN100375352 C CN 100375352C CN B200510086312X A CNB200510086312X A CN B200510086312XA CN 200510086312 A CN200510086312 A CN 200510086312A CN 100375352 C CN100375352 C CN 100375352C
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Abstract
This invention relates to silicon photon crystal micro chamber Laman laser structure, which comprises the following parts: one insulation silicon materials; one two-dimension photon crystal photon to process on insulation silicon materials in the middle part of the insulation materials; one two-dimension photon crystal micro chamber to form center position; one P shape silicon to process on the insulation materials one side located by photon crystal; one N shape silicon process on the insulation silicon materials on other side.
Description
Technical field
The present invention relates to a kind of silicon-base Raman laser structure, the microcavity of using the 2 D photon crystal high-quality-factor has reduced raman laser and has swashed the threshold value of penetrating as resonant cavity, is easy to generate the good raman laser of monochromaticjty.
Background technology
Silica-based microelectric technique is one of high-tech that had most in 20th century great achievement, and its development has changed human life style with ripe, has greatly accelerated the process of social development.The rise of photon technology has been brought up to a new height with transmission of Information and processing procedure again.Current, the strong market demands of global IT application trend, when promoting microelectric technique continuation forward, just impelling photoelectron, the fast development of photon integrated technology, wherein silica-based smooth integrated technology makes it occupy important status in the informationization progress with its special advantages.Photoelectron mainly can be divided into several big classes: (1) planar optical waveguide photon integrated chip (PLC); (2) photoelectron integrated chip (OEIC); (3) light source and light-detecting device (LD, LED and PD, APD etc.).Because silicon single crystal body belongs to the semi-conducting material of indirect band gap, the stimulated radiation ability is very weak, and silica-based light source is excluded outside the main body of photon technology always.The fast development of quantum well superlattice technology provides new possibility for the silicon based photon device.Because key technology and microelectronics during silicon based photon is integrated are compatible, the ultra-large high development that is integrated in little process equipment and technology provides the mature technology platform for the silicon based photon device is integrated, various photonic devices, and optical integrated chip emerges in large numbers rapidly.
Si-based light-emitting device is the difficult point and the focus of silicon based opto-electronics research always.Recent research confirms, because in quantum-dot structure, the density of states of electronics has become the separation energy level, thereby makes transition process need not defer to conservation of momentum principle, radiation recombination no longer is subjected to the restriction of optical transition selection rule, thereby improves the luminous efficiency of silicon based optoelectronic devices widely.Therefore, utilize silica-based low-dimensional quantum trap to develop the main direction that efficient silicon based photon device becomes the Chinese scholars unanimity.Typical process is to utilize the method for MBE or CVD to grow one dimension restriction quantum well structure earlier, is forming two dimensional constraint by Micrometer-Nanometer Processing Technology, realizes Quantum Dots Growth.By caustic solution and the measure of improvement porous silicon luminescence mechanism stable that improves porous silicon, same luminous intensity and the stability of porous that effectively improves.Domestic and international research institution also utilizes the multi-layer porous silicon of different vesicularities and makes the method for micro-cavity structure, steps up to develop the silica-base material laser diode.Although obtained remarkable progress in the research of silicon based photon device, practicability still has a very long segment distance.
The graduate researcher of Intel has at first realized the silicon-base Raman laser of pulse pump.Raman effect in silicon than strong more than 10000 times in glass.They add that between the silica-based ridge waveguide of the transmission channel of Raman light reverse bias voltage is 25V, can eliminate two photon absorption (TPA) like this, and free carrier absorbs the very lossy that (FCA) produces.Wherein, the pump light wavelength of input is that the raman laser wavelength of 1536nm output is 1669.5nm (Rong, H.et al.An all-silicon Raman laser.Nature 433,292-294 (2005) .).
Then the researcher of Intel has realized continuous wave silicon-base Raman laser (Haisheng Rong again, Richard Jones, Ansheng Liu, et al.Acontinuous-wave Ramansilicon laser.Nature, Vol 433,17February 2005 (725-728)).Still adopt the PIN diode structure, this structure can be eliminated two photon absorption and realize the light amplification of continuous wave.The Raman that has manifested continuous wave when transmitting between the minute surface cover layer of light at the waveguide two ends amplifies.The pump light wavelength of input is 1550nm, and the raman laser wavelength of output is 1686nm.This is the important milestone of silicon based opto-electronics device and integrated research thereof.Graduate this achievement of Intel makes silicon based opto-electronics device and integrated research thereof step major step forward, the structure of the silicon-base Raman laser that they propose is that two end face coatings at ridge waveguide play the reflection of light effect, constitute the resonant cavity of laser with this, form an independent devices.This kind structure has its shortcoming, need plate laminated reflective film at end face, and it is very high that the opposite end surface evenness requires, because at two end face coatings, this kind structure is unfavorable for integrated with other devices.And the present invention can address this problem.
On the other hand, the application of the microcavity of high Q value is also very extensive.And people also consider other one side when utilizing the long enlarge-effect that increases raman laser in chamber, can utilize the threshold value (Opt Lett.V.292004P1224) of the microcavity reduction raman laser of high Q value.Utilize the discoid microcavity of ultrahigh Q-value, single mode micro-cavity Raman laser on single chip.The Raman threshold value of this Raman laser only is several Bos watt, and the pumping one Raman conversion efficiency about 45% is arranged, and wherein the high Q value of little dish is up to 100 * 10
6Especially after photonic crystal occurs, from theoretical and experimentally to study the high Q value of photonic crystal microcavity in the ascendant.The microcavity of photonic crystal is high Q value and little mode volume, and this characteristics can greatly reduce the threshold value of Raman laser.The photon crystal micro cavity laser is subjected to greatly paying close attention to for this reason.
Summary of the invention
The object of the present invention is to provide a kind of structure of 2 D photon crystal microcavity silicon-base Raman laser, this Raman laser structure compactness, mode volume is little, and threshold value is low, is convenient to integrated with other devices.
A kind of silicon based photon crystal micro-cavity Raman laser structure of the present invention is characterized in that, comprising:
One silicon-on-insulator material;
One 2 D photon crystal, this 2 D photon crystal be produced on silicon-on-insulator material above, be positioned at the pars intermedia office of silicon-on-insulator material;
One 2 D photon crystal microcavity, this 2 D photon crystal microcavity is formed on the center of 2 D photon crystal;
One P type silicon, this P type silicon is produced on the side above the silicon-on-insulator material, is positioned at one side of 2 D photon crystal;
One N type silicon, this N type silicon is produced on the opposite side above the silicon-on-insulator material, is positioned at the another side of 2 D photon crystal.
Wherein silicon-on-insulator material 1 comprises:
One silicon substrate;
One silicon dioxide insulating layer, this silicon dioxide insulating layer is produced on the silicon substrate;
One top layer silicon, this top layer silicon is produced on the silicon dioxide insulating layer.
Wherein the thickness of silicon dioxide insulating layer is the 0.4-2 micron.
Wherein this top layer silicon satisfies single mode condition near infrared band.
Wherein the 2 D photon crystal microcavity is a high-q cavity, and the Q value will reach 10
6More than, so that the gain of Raman laser is greater than loss.
Wherein the defective mould corresponding wavelength of 2 D photon crystal microcavity is near the wavelength of optical communication of 1550nm.
Wherein the band gap of 2 D photon crystal is being the scope at center with 1550nm, more than several 20 rows of the row of photonic crystal, with the leakage of restriction light.
Wherein the structure of 2 D photon crystal is triangular crystal lattice, square lattice, hexagonal lattice or quasicrystal structure.
Description of drawings
In order to further specify content of the present invention and characteristics, below in conjunction with drawings and Examples the present invention is done a detailed description, wherein:
Fig. 1 is the structure vertical view of silicon based photon crystal micro-cavity Raman laser;
Fig. 2 is as the photon crystal micro cavity vertical view of silicon-base Raman laser resonant cavity;
Fig. 3 is the end view of silicon based photon crystal micro-cavity Raman laser.
Embodiment
See also Fig. 1 and Fig. 2, the present invention is a kind of silicon-base Raman laser structure of 2 D photon crystal high-q cavity, comprising:
One insulator silicon SOI) material 1, the top layer silicon 7 (afterwards chatting) of this SOI material 1 satisfies single mode condition;
One 2 D photon crystal 2, this 2 D photon crystal 2 be produced on SOI material 1 above, be positioned at the pars intermedia office of SOI material 1, the band gap of this 2 D photon crystal 2 is being the scope at center with 1550nm, more than several 20 rows of the row of photonic crystal, with the leakage of restriction light, the structure of this 2 D photon crystal 2 is triangular crystal lattice, square lattice, hexagonal lattice or quasicrystal structure;
One 2 D photon crystal microcavity 5, this 2 D photon crystal microcavity 5 is formed on the center of 2 D photon crystal 2, and this 2 D photon crystal microcavity 5 is a high-q cavity, and the Q value will reach 10
6More than, so that the gain of Raman laser is greater than loss, the defective mould corresponding wavelength of this 2 D photon crystal microcavity 5 is near the wavelength optical communication of 1550nm;
One P type silicon 3, this P type silicon 3 are produced on the side above the SOI material 1, are positioned at one side of 2 D photon crystal 2;
One N type silicon 4, the opposite side that this N type silicon system 4 is done on SOI material 1 is positioned at the another side of 2 D photon crystal 2.
The SOI material 1 that sees also in Fig. 3 silicon based photon crystal micro-cavity Raman laser structure of the present invention comprises:
One silicon substrate 9;
One silicon dioxide insulating layer 8, this silicon dioxide insulating layer 8 is produced on the silicon substrate 9, and the thickness of this silicon dioxide insulating layer 8 is 0.4 ~ 2 micron;
One top layer silicon 7, this top layer silicon 7 is produced on the silicon dioxide insulating layer 8, and 7 pairs of near infrared bands of this top layer silicon satisfy single mode condition.
The design of this photonic crystal and photon crystal micro cavity 5 has special consideration, mainly to consider this microcavity defective will be in photon band gap the defectiveness mould, and the Q value of this defective mould is very high.Main row's number of photonic crystal is abundant, generally reaches 20 more than the periodicity by designing the Q value of suitable photon crystal structure and micro-cavity structure increase microcavity, guarantees the light small leaks of local at central defect.The lattice constant of photonic crystal and the design of duty ratio also will be considered experiment condition, as silicon-base Raman Wavelength of Laser corresponding after the suitable pump light pumping, this wavelength will be included in the designed photonic band gap, prior, the resonance wavelength of designed photon crystal micro cavity will be just in time corresponding to the raman laser wavelength of pump excitation.Threshold finite difference calculus that these designs are general when adopting is carried out the numerical computations simulation and is obtained suitable parameters.The high Q value of photon crystal micro cavity generally realizes by the special photon crystal micro cavity structure of design, the form of microcavity is not limited to the individual defect microcavity, also can design a plurality of defective microcavitys, and little microcavity that moves is produced in radius change or the edge hole position of designing some defective, as be designed to triangle microcavity, the strip microcavity of two Kong Weiyi etc.The photon crystal micro cavity of high Q value is the key that produces excited Raman laser, and the Q value is high more, and the threshold value that then produces excited Raman laser is just low more, is easy to generate more to swash and penetrates.
Adopt ion injection method to form P type silicon 3 and N type silicon 4 respectively at the photonic crystal dual-side, then at the upper surface in this two district grow respectively P shape electrode and N shape electrode.In the experiment, can be by between the two poles of the earth, adding suitable voltage, this voltage mainly is that minimizing two photon absorption and free carrier absorb the loss that causes, increases the conversion efficiency of excited Raman laser.The biggest obstacle that produces Raman gain for the silicon raman laser is because two photon absorption and free carrier absorb the loss that causes.Doing suitable P type silicon 3 and N type silicon 4 near the photonic crystal both sides, P type electrode and N type electrode in the laying when laser pumping, add suitable voltage on P type and N type electrode.Within the specific limits, the voltage that adds at two interpolars is big more, and then the gain of raman laser is high more.Thereby this voltage is mainly by reducing the loss that two photon absorption causes on the microcavity in the middle of being added in.It between electrode and microcavity the hole of some arrays, electric current mainly is the loop of hole wall circulation formation by silicon materials so, because reducing of circulation area, may cause resistance to increase, conducting to electric current causes certain influence, also promptly may certain influence be arranged to the reduction of two photon absorption and free carrier absorption.We can realize the conducting preferably of electric current by the duty ratio of adjusting photonic crystal holes.
The photon crystal micro-cavity Raman laser of this structure can be the form of vertical cavity surface emission, also can be the Raman laser of transmission in the plane.Pumping laser adopts perpendicular to photonic crystal plane or angled direction pumping micro-cavity structure, and raman laser is perpendicular to planar transmit, and the laser of Shi Xianing is mainly the Raman micro-cavity laser of vertical plane emission form like this.Because raman laser produce to swash penetrate after planar with perpendicular to plane both direction outgoing, and planar partly and the part of vertical direction account for certain ratio according to the thickness of photon crystal structure and planar waveguide.Planar Chuan Shu raman laser be because will be subjected to the restriction of multilayer photon crystal structure, transfer out photonic crystal region after signal can be very weak.We can manage to consider to adopt a straight wave guide near photon crystal micro cavity so, draw the Raman light signal.And this outgoing mode integrated good idea that provides on monolithic also for photon crystal micro cavity laser and other opto-electronic devices.
The manufacture method of photonic crystal is as follows: the SiO of growth 200nm left and right thickness on the top layer silicon 7 of SOI
2, at SiO
2Go up the photoresist that evenly applies about 200nm, utilize the electron beam plating method on photoresist in location definition photonic crystal pattern, then respectively with photoresist and SiO corresponding to the both ends of the surface of ridge waveguide
2Make mask dry etching method on top layer silicon 7 and form photon crystal structure, dry etching method can adopt reactive ion beam or inductively coupled plasma lithographic method, forms structure as shown in Figure 2, and dark circles is represented the airport of etching.As an example wherein, photonic crystal lattice constant is taken as 0.30 λ, aperture 0.10 λ, and the triangular crystal lattice that is arranged as of airport distributes, and the degree of depth of airport is the thickness of SOI top material layer silicon 7.The combination of 2 D photon crystal electrode etc. sees also shown in Figure 3: form p type island region and N type district respectively near the photonic crystal front side, the planar waveguide that the direction of the airport of photonic crystal constitutes perpendicular to top layer silicon 7.
The implementation process of the silicon-base Raman laser of above photon crystal micro cavity is as follows:
Implementation procedure of the present invention is: in conjunction with consulting Fig. 2, when starting working, Raman laser between the N type silicon 3 of P-N knot and P type silicon 4, adds about 20V left and right sides voltage, pumping laser adopts the semiconductor laser of the 1550nm of Er ionic light fiber amplifier amplification, the about 4W of power, pump light utilizes the position of high-power microscope vertical focusing to photon crystal micro cavity, and this microcobjective also is to collect the signal effect simultaneously.When pumping laser is enough strong, the silicon Raman medium at photonic crystal place produces Raman signal, because the Q value of microcavity is enough high, main local made Raman light produce vibration in microcavity at the microcavity place after pumping laser produced Raman light so, Raman signal amplifies enhancing gradually, and after the photonic crystal both sides add voltage, reduced the loss of flashlight, in case, just having realized the sharp of Raman light greater than loss, the gain of the Raman light of vibration penetrates, produce laser, and go out to shoot out from vertical direction.
Claims (8)
1. a silicon based photon crystal micro-cavity Raman laser structure is characterized in that, comprising:
One silicon-on-insulator material;
One 2 D photon crystal, this 2 D photon crystal be produced on silicon-on-insulator material above, be positioned at the pars intermedia office of silicon-on-insulator material;
One 2 D photon crystal microcavity, this 2 D photon crystal microcavity is formed on the center of 2 D photon crystal;
One P type silicon, this P type silicon is produced on the side above the silicon-on-insulator material, is positioned at one side of 2 D photon crystal;
One N type silicon, this N type silicon is produced on the opposite side above the silicon-on-insulator material, is positioned at the another side of 2 D photon crystal.
2. silicon based photon crystal micro-cavity Raman laser structure according to claim 1 is characterized in that wherein silicon-on-insulator material comprises:
One silicon substrate;
One silicon dioxide insulating layer, this silicon dioxide insulating layer is produced on the silicon substrate;
One top layer silicon, this top layer silicon is produced on the silicon dioxide insulating layer.
3. silicon based photon crystal micro-cavity Raman laser structure according to claim 2 is characterized in that, wherein the thickness of silicon dioxide insulating layer is the 0.4-2 micron.
4. silicon based photon crystal micro-cavity Raman laser structure according to claim 2 is characterized in that wherein this top layer silicon satisfies single mode condition near infrared band.
5. silicon based photon crystal micro-cavity Raman laser structure according to claim 1 is characterized in that, wherein the 2 D photon crystal microcavity is a high-q cavity, and the Q value will reach 10
6More than, so that the gain of Raman laser is greater than loss.
6. silicon based photon crystal micro-cavity Raman laser structure according to claim 1 is characterized in that, wherein the defective mould corresponding wavelength of 2 D photon crystal microcavity is near the optical communications wavelength the 1550nm.
7. silicon based photon crystal micro-cavity Raman laser structure according to claim 1 is characterized in that, wherein the band gap of 2 D photon crystal is being the scope at center with 1550nm, more than several 20 rows of the row of photonic crystal, with the leakage of restriction light.
8. silicon based photon crystal micro-cavity Raman laser structure according to claim 1 is characterized in that, wherein the structure of 2 D photon crystal is triangular crystal lattice, square lattice, hexagonal lattice or quasicrystal structure.
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| CN102856789A (en) * | 2012-09-19 | 2013-01-02 | 中国科学院半导体研究所 | Mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327283A (en) * | 2000-06-06 | 2001-12-19 | 中国科学院物理研究所 | Photon crystal micro cavity structure |
| EP1471612A1 (en) * | 2003-04-17 | 2004-10-27 | Alcatel | Raman amplifier system |
| US20050053111A1 (en) * | 2003-09-10 | 2005-03-10 | Remus Nicolaescu | Method and apparatus for Raman ring resonator based laser/wavelength converter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327283A (en) * | 2000-06-06 | 2001-12-19 | 中国科学院物理研究所 | Photon crystal micro cavity structure |
| EP1471612A1 (en) * | 2003-04-17 | 2004-10-27 | Alcatel | Raman amplifier system |
| US20050053111A1 (en) * | 2003-09-10 | 2005-03-10 | Remus Nicolaescu | Method and apparatus for Raman ring resonator based laser/wavelength converter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856789A (en) * | 2012-09-19 | 2013-01-02 | 中国科学院半导体研究所 | Mixed silicon single mode annular cavity laser based on microstructural silicon waveguide frequency selection |
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