CN105022116A - All-optical diode structure employing two cavities of side edges of photonic crystal waveguide - Google Patents
All-optical diode structure employing two cavities of side edges of photonic crystal waveguide Download PDFInfo
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- CN105022116A CN105022116A CN201510437879.0A CN201510437879A CN105022116A CN 105022116 A CN105022116 A CN 105022116A CN 201510437879 A CN201510437879 A CN 201510437879A CN 105022116 A CN105022116 A CN 105022116A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
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- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses an all-optical diode structure employing two cavities of side edges of a photonic crystal waveguide. Medium posts constituting a photonic crystal structure are round medium posts arranged in square lattices periodically. The distance between the medium posts constituting the photonic crystal structure is the lattice constant. A cavity is formed by removing three medium posts constituting the photonic crystal structure from a second row of the medium posts constituting the photonic crystal structure above the waveguide. The all-optical diode structure is high in positive and negative projection ratio and one-direction transmissivity. The positive conductance reaches as high as 80% while the negative cut-off conductance reaches as high as 100%. Required optical power is low and the threshold power is 0.34 mw. Besides, the photonic crystal has a characteristic of being capable of adjusting forbidden band range through adjusting the lattice constant and the working waveband can be adjusted through the adjustable lattice constant. No external pumping excitation is needed. The all-optical diode structure is an optical passive device and is convenient to be integrated into an all-optical network. Therefore, the all-optical diode structure has great application value.
Description
Technical field
The present invention relates to semiconductor devices, specifically relate to a kind of full light diode utilizing two-chamber asymmetric coupling in photon crystal wave-guide both sides to realize.
Background technology
In today that quantity of information expands day by day, conventional information network no longer meets the demand of people, but along with the increase of traffic demands, various new technology is updated and perfect, all-optical network is suggested thereupon, such a technique avoids intermediate node electronic bottleneck problem in conventional communication networks, be subject to the attention of countries in the world, the final trend of future network development will be become.
Full light diode is as one of the critical component of following all-optical signal processing, and constantly must study its implementation, Improvement and perfection can be more convenient in addition, realizes forward conduction more efficiently, oppositely by function.The full light diode of two-chamber designed by the present invention does not need outside energy to encourage pumping, be full photocontrol behavior completely, high except having one-way conduction efficiency, threshold power is little, service band is adjustable etc. an external structure simplicity of design, and it is very large convenient to bring to manufacture technics.
Summary of the invention
The object of the invention is to propose a kind of project organization realizing full light diode, excellent serviceability can not only be realized, and structural design is simple, be convenient to realize.
For achieving the above object, the present invention is achieved through the following technical solutions.The full light diode structure of photon crystal wave-guide side two-chamber, comprises background, formation photon crystal structure dielectric posts, oppositely transmission port/forward entrance port, oppositely entry port/forward transmission port, grating constant, waveguide, microcavity corresponding dielectric posts, microcavity and cavity;
Described formation photon crystal structure dielectric posts is circular dielectric posts, and its periodic arrangement is square lattice arrangement;
Distance between described formation photon crystal structure dielectric posts is grating constant, and grating constant can be with scope for regulating photonic crystal;
Described cavity is made up of second row above waveguide to cancel three in photonic crystal dielectric posts and form photonic crystal dielectric posts and formed;
The corresponding dielectric posts of described microcavity is the circular dielectric posts that first of being positioned at that the left side of cavity cancels forms waveguide position immediately below photonic crystal dielectric posts, and corresponding with microcavity 07, and its size is equal with forming photonic crystal dielectric posts;
Described microcavity is elliptical media post, and the size of microcavity is for regulating Q value and the transmissivity at the Fano peak of microcavity;
The material of the corresponding dielectric posts of described formation photon crystal structure dielectric posts, microcavity, microcavity is GaAs;
The material of described background is air;
The structure of the full light diode of described photon crystal wave-guide side two-chamber, waveguide left end is reverse transmission port/forward entrance port, and waveguide right-hand member is reverse entry port/forward transmission port.
A kind of photon crystal wave-guide side two-chamber all-optical diode is applied to the optical network full optical communication technology and apparatus thereof.
Photonic crystal side two-chamber all-optical diode structure of the present invention, positive and negative projection than and direct transmission factor very high, can reach about 80% in forward conduction rate, oppositely end on-state rate and almost can reach 100%; Needed for period, luminous power is very little, and threshold power is 0.34mw, and photonic crystal has and according to the feature regulating the grating constant of self to regulate forbidden band scope, can regulate service band by adjustable grating constant.Not needing extraneous pumping to encourage, is optical passive component, is convenient to be integrated in all-optical network, therefore has larger using value.
Accompanying drawing explanation
Fig. 1 is project organization schematic diagram of the present invention;
Fig. 2 is the transmission peaks spectrogram of cavity;
Fig. 3 obtains microcavity Fano peak spectrogram for having high q-factor;
Fig. 4 is that cavity interferes formation two to be separated transmission spectrum with microcavity mutually;
When Fig. 5 is 0.446 ω a/2 π c for inputting light frequency of operation, forward and reverse transmission port changes transmission plot with incident intensity;
In figure: 01. background, 02. forms photon crystal structure dielectric posts, 03. reverse transmission port/forward entrance port, 04. reverse entry port/forward transmission port, 05. waveguide, the corresponding dielectric posts of 06. microcavity, 07. microcavity, 08. cavity, a. grating constant.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.As shown in Figure 1, the full light diode structure of photon crystal wave-guide side two-chamber, comprises background 01, formation photon crystal structure dielectric posts 02, oppositely transmission port/forward entrance port 03, oppositely entry port/forward transmission port 04, grating constant a, waveguide 05, microcavity corresponding dielectric posts 06, microcavity 07 and cavity 08.
Described formation photon crystal structure dielectric posts 02 is circular dielectric posts, and its periodic arrangement is square lattice arrangement; Distance between described formation photon crystal structure dielectric posts 02 is that grating constant a, grating constant a can be with scope for regulating photonic crystal; Described cavity 08 is made up of second row above waveguide 05 to cancel three in photonic crystal dielectric posts 02 and form photonic crystal dielectric posts 02 and formed; The corresponding dielectric posts of described microcavity 07 06 is the circular dielectric posts that first of being positioned at that the left side of cavity 08 cancels forms waveguide 05 position immediately below photonic crystal dielectric posts 02, and corresponding with microcavity 07, and its size is equal with forming photonic crystal dielectric posts 02; Described microcavity 07 is elliptical media post, and the size of microcavity 07 is for regulating Q value and the transmissivity at the Fano peak of microcavity 07; The material of the corresponding dielectric posts 06 of described formation photon crystal structure dielectric posts 02, microcavity 07, microcavity is GaAs; The material of described background 01 is air; The structure of the full light diode of described photon crystal wave-guide side two-chamber, waveguide 05 left end is reverse transmission port/forward entrance port 03, and waveguide 05 right-hand member is reverse entry port/forward transmission port 04.
Photonic crystal side two-chamber all-optical diode structure, the cavity 08 of waveguide 05 both sides is utilized to be coupled with microcavity 07 is asymmetric, and by regulating the size of microcavity 07, regulating microcavity 07 transmission peaks position, two chambeies (that is: cavity 08 and microcavity 07) are interfered mutually.Within the scope of certain frequency, occur that but two are separated the transmission peaks of suffering very near, as shown in Figure 4.Select input light frequency of operation between two detached peakses and the position at the fano peak of close microcavity 07.Input light forward entrance, when increasing light intensity, because the light of local in microcavity 07 is shorter from the distance of forward entrance inbound port 03, can first be coupled with input light, due to the light Kerr effect of microcavity 07, the first red shift of the Fano summit of microcavity 07 to frequency of operation position, the final forward conduction realized inputting light, oppositely by function.The present invention selects the frequency of operation inputting light to there is no a certain value determined, between two detached peakses, low ebb place is also near the position at the Fano peak of microcavity 07.Select input light frequency of operation to be 0.446 ω a/2 π c in the present invention, under the light Kerr effect of microcavity 07, along with the light intensity of input light increases, during forward entrance, the first red shift in the Fano peak of microcavity 07 is to frequency of operation, and input light forward conduction, oppositely ends.
Performing step of the present invention is as follows:
First, regulate the size of photonic crystal lattice constant a, determine operating frequency band.
Secondly, calculate cavity 08 crest frequency position, result of calculation as shown in Figure 2.
Then, regulate microcavity 07 size, make its Fano crest frequency slightly larger than cavity crest frequency.As shown in Figure 3, its transmissivity can reach 95%, and quality factor is 3797.
Finally, mutually interfere formation two to be separated transmission spectrum according to Fig. 4 cavity 08 with microcavity 07, select incident light frequency of operation to be 0.446 ω a/2 π c, wherein ω is angular frequency, and a is grating constant, and c is the light velocity.Respectively that incident light is incident from forward entrance port 03 and reverse entry port 04 respectively.Because nonlinear material refractive index is: n (x, z)=n
0+ n
2e
2(x, z), wherein n
0the refractive index of material under unglazed massive exposure, n
2the nonlinear factor of material, E
2(x, z) is the electric field intensity of local, along with the light intensity of incident light strengthens gradually, the refractive index of microcavity 07 under light Kerr effect constantly increases, the Fano peak of microcavity 07 moves toward low frequency direction, and consistent with frequency of operation when moving to, device becomes transmissive state by reflection.Due to the asymmetry of structure, forward is with oppositely the intensity of incident time local in microcavity 07 is different, the light intensity of local in microcavity 07 when the light intensity of light local in microcavity 07 during forward entrance substantially exceeds oppositely incident, oppositely incident light needs stronger light intensity the Fano peak of microcavity 07 could be moved to frequency of operation place.As shown in Figure 5, show forward and reverse transmission port when incident light frequency of operation is 0.446 ω a/2 π c and change transmission plot with incident intensity.Between 0.34-0.51 mW/ μm, forward conduction oppositely ends, required Intensity threshold is 0.34mW/ μm, and its transmissivity can reach 80%, when the light intensity of reverse incident light is strengthened to 0.51 mW/ μm, the light of reverse incidence punctures full light diode, from the transmission of reverse transmission port 03.
Photon crystal wave-guide side two-chamber all-optical diode of the present invention is applied to the optical network full optical communication technology and apparatus thereof.
Claims (2)
1. the full light diode structure of photon crystal wave-guide side two-chamber, comprise background, formation photon crystal structure dielectric posts, oppositely transmission port/forward entrance port, oppositely entry port/forward transmission port, grating constant, waveguide, microcavity corresponding dielectric posts, microcavity and cavity, it is characterized in that
Described formation photon crystal structure dielectric posts is circular dielectric posts, and its periodic arrangement is square lattice arrangement;
Distance between described formation photon crystal structure dielectric posts is grating constant, and grating constant can be with scope for regulating photonic crystal;
Described cavity is made up of second row above waveguide to cancel three in photonic crystal dielectric posts and form photonic crystal dielectric posts and formed;
The corresponding dielectric posts of described microcavity is the circular dielectric posts that first of being positioned at that the left side of cavity cancels forms waveguide position immediately below photonic crystal dielectric posts, and corresponding with microcavity 07, and its size is equal with forming photonic crystal dielectric posts;
Described microcavity is elliptical media post, and the size of microcavity is for regulating Q value and the transmissivity at the Fano peak of microcavity;
The material of the corresponding dielectric posts of described formation photon crystal structure dielectric posts, microcavity, microcavity is GaAs;
The material of described background is air;
The structure of the full light diode of described photon crystal wave-guide side two-chamber, waveguide left end is reverse transmission port/forward entrance port, and waveguide right-hand member is reverse entry port/forward transmission port.
2. a photon crystal wave-guide side two-chamber all-optical diode application, is characterized in that, be applied to the optical network full optical communication technology and apparatus thereof.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720475A (en) * | 2016-03-23 | 2016-06-29 | 华南理工大学 | Unidirectional optical transmitting method and apparatus for photonic crystal based all-optical diode |
| CN105977632A (en) * | 2016-06-12 | 2016-09-28 | 南京航空航天大学 | Metamaterial-based non-reciprocal antenna housing and generation method of nonreciprocity thereof |
| CN106405977A (en) * | 2016-10-31 | 2017-02-15 | 南昌航空大学 | Method for realizing all-optical diode |
| CN109193174A (en) * | 2018-09-11 | 2019-01-11 | 南京邮电大学 | A kind of unidirectional nonreciprocal wave absorbing device and its production method based on Meta Materials |
| CN109491012A (en) * | 2018-12-05 | 2019-03-19 | 南京邮电大学 | Tunable light-operated THz wave beam splitter based on photonic crystal |
| CN109669239A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide |
| CN110749954A (en) * | 2019-11-29 | 2020-02-04 | 华侨大学 | Dirac-like point-based negative-refractive-index waveguide fast optical device and design method |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720475A (en) * | 2016-03-23 | 2016-06-29 | 华南理工大学 | Unidirectional optical transmitting method and apparatus for photonic crystal based all-optical diode |
| CN105720475B (en) * | 2016-03-23 | 2018-10-09 | 华南理工大学 | A kind of all-optical diode uni-directional light flow method and device based on photonic crystal |
| CN105977632A (en) * | 2016-06-12 | 2016-09-28 | 南京航空航天大学 | Metamaterial-based non-reciprocal antenna housing and generation method of nonreciprocity thereof |
| CN105977632B (en) * | 2016-06-12 | 2018-10-16 | 南京航空航天大学 | The production method of nonreciprocity antenna house and its nonreciprocity energy based on Meta Materials |
| CN106405977A (en) * | 2016-10-31 | 2017-02-15 | 南昌航空大学 | Method for realizing all-optical diode |
| CN106405977B (en) * | 2016-10-31 | 2018-12-04 | 南昌航空大学 | A kind of implementation method of all-optical diode |
| CN109193174A (en) * | 2018-09-11 | 2019-01-11 | 南京邮电大学 | A kind of unidirectional nonreciprocal wave absorbing device and its production method based on Meta Materials |
| CN109491012A (en) * | 2018-12-05 | 2019-03-19 | 南京邮电大学 | Tunable light-operated THz wave beam splitter based on photonic crystal |
| CN109491012B (en) * | 2018-12-05 | 2020-05-22 | 南京邮电大学 | Tunable light-controlled terahertz wave beam splitter based on photonic crystal |
| CN109669239A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide |
| CN110749954A (en) * | 2019-11-29 | 2020-02-04 | 华侨大学 | Dirac-like point-based negative-refractive-index waveguide fast optical device and design method |
| CN110749954B (en) * | 2019-11-29 | 2024-03-29 | 华侨大学 | Negative refractive index waveguide fast-light device based on Dirac-like point and design method |
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