CN101963736B - Slow light waveguide structure based on photonic crystal air bridge structure - Google Patents
Slow light waveguide structure based on photonic crystal air bridge structure Download PDFInfo
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- CN101963736B CN101963736B CN2010102515112A CN201010251511A CN101963736B CN 101963736 B CN101963736 B CN 101963736B CN 2010102515112 A CN2010102515112 A CN 2010102515112A CN 201010251511 A CN201010251511 A CN 201010251511A CN 101963736 B CN101963736 B CN 101963736B
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Abstract
The invention discloses a slow light waveguide structure based on a photonic crystal air bridge structure, which adopts a line defect photonic crystal structure, and comprises a longitudinal structure and a horizontal structure, wherein, the longitudinal structure is an air bridge multi-layer structure which comprises an air layer, a semiconductor material layer, an air layer and a substrate material layer from the top layer to the bottom layer; the horizontal structure adopts a triangular lattice structure, the period is P, and the radius is R; and the waveguide is formed through removing a row of holes. Through changing the size of the line defect nearby hole, the slow light waveguide structure of the invention realizes a slow light working area reaching up to 50 nanometers; the central wavelength can be adjusted through the width of the waveguide, which can be realized only in need of the small holes with two types of apertures within the requirement range of hundreds of nanometers of operating wavelengths, thus lowering the requirement of device parameter adjustment in a certain technological condition. By utilizing the slow light photonic crystal waveguide of the slow optical waveguide structure based on the photonic crystal air bridge structure, the bandwidth can cover the C wave band of the fiber-optical communication, and can achieve 50nm.
Description
Technical field
The present invention relates to design of photonic crystal slow optical wave guide and photon optoelectronic device design field, relate in particular to a kind of slow optical wave guide structure based on the photonic crystal air bridge structure.
Background technology
The slow light effect device is one of Primary Component of optical communication of new generation, optical storage and photonic device.Photonic crystal in recent years, is the focus of research because himself always, and various effects also constantly come to light and utilize.Nearly all active and passive photonic device can manufacture and design with the theory and the material of photonic crystal.Its many unique distinctions are noticeable, as based on the small size wide-angle of photonic band gap bending lossless waveguide, based on the ultra prism of band edge super large effect of dispersion, based on the imaging len of the breakthrough diffraction limit of photonic crystal negative refraction.Wherein photonic crystal band edge slow light effect is very noticeable; It can greatly strengthen the interaction of light and material in miniature scale; Effectively control rate of irradiation; Realized based on this various micro-nano cavity lasers that ultralow threshold value swashs and penetrated that the photon crystal laser of special cavity configuration has the modulation rate up to 100Gbps.
Modulator, photoswitch, light delay device size based on slow light effect can be dwindled 1 or several magnitude.All there is important application aspects such as the semiconductor optical amplifier based on slow light effect is calculated at signal amplification, wavelength conversion, optical logic gate, photometry, the code conversion of optical network node, chromatic dispersion monitoring, optical code division multiple access multiplex transmitting and receiving module; It is long that the employing of slower rays structure can be shortened the chamber significantly; Thereby reduce size significantly; Reduce power consumption, improve speed.
The waveguide of photonic crystal slow light effect is the basis of photonic crystal slower rays designs; Before this a lot of bibliographical informations are arranged photon crystal linear defect can be used as the slower rays device; Group index can reach more than 100; But the design of big bandwidth does not appear in the newspapers as yet, here we to define the slower rays bandwidth of operation be group index greater than 10 single mode continuous working zone.Common slower rays photon crystal wave-guide bandwidth is several nanometers, is difficult to satisfy the requirement of big bandwidth in the optical communication like this.General in addition the adjustment photonic crystal lattice cycle changes its operation wavelength position through keeping dutycycle constant, and the device that like this different operating zone is required needs different technological conditions, makes design go up difficulty and strengthens.
Summary of the invention
The technical matters that (one) will solve
In view of this, fundamental purpose of the present invention is to provide a kind of slow optical wave guide structure based on the photonic crystal air bridge structure.
(2) technical scheme
For achieving the above object, the invention provides a kind of slow optical wave guide structure based on the photonic crystal air bridge structure, this slow optical wave guide structure adopts the line defect photon crystal structure; Comprise vertical structure and transversary, vertical structure is the air bridges sandwich construction, is followed successively by air layer/semiconductor material layer/air layer/substrate material layer from top to bottom; Transversary adopts the triangular crystal lattice structure; Cycle is P, and radius is R, forms waveguide through removing the delegation hole.
In the such scheme, this slow optical wave guide structure closes on the radius in hole through the adjustment line defect and the width of waveguide changes slower rays zone bandwidth and centre wavelength position.
In the such scheme, said adjustment line defect is closed on the radius in hole and the width of waveguide changes slower rays zone bandwidth and centre wavelength position, comprising: when closing on the pore radius variation, slower rays operation wavelength position and scope all will change; When waveguide closed on the first round radius and diminishes, the slower rays working range can move to the long wave direction, and bandwidth also will increase gradually, but bandwidth is increased to a certain degree, had been not single mode just; When duct width dwindled, the slower rays perform region can be moved to the shortwave direction, and bandwidth of operation also will change.
In the such scheme, the semiconductor material layer in the said vertical structure adopts silicon or indium phosphide.
In the such scheme, the semiconductor material layer in the said vertical structure has photon crystal wave-guide, and this semiconductor material layer thickness is 250 to 300 nanometers.
In the such scheme, the triangular crystal lattice structure that said transversary adopts, its cycle P is 380 to 420 nanometers, pore radius R is 0.31P, thereby makes it work near the communication band of 1550 nanometers.
(3) beneficial effect
Can find out that from technique scheme the present invention has following beneficial effect:
1, the slow optical wave guide structure based on the photonic crystal air bridge structure provided by the invention; Adopt triangular crystal lattice air bridge structure photonic crystal; Through changing the size that line defect is closed on the hole, realize slower rays workspace up to 50 nanometers, centre wavelength can be regulated through duct width.
2, the slow optical wave guide structure based on the photonic crystal air bridge structure provided by the invention only needs the aperture in two kinds of apertures just can realize in the operation wavelength claimed range of nanometers up to a hundred, can reduce the device parameters adjustment requirement of satisfying a certain process conditions like this.
3, utilize the slower rays photon crystal wave-guide of the slow optical wave guide structure based on the photonic crystal air bridge structure provided by the invention, its bandwidth can cover the optical fiber communication C-band, up to 50nm.Utilize the aperture of two kinds of sizes just can realize that the big bandwidth of multiple work centre wavelength has the photon crystal wave-guide of slow light effect.
Description of drawings
Fig. 1 is the vertical structure synoptic diagram of the slow optical wave guide structure based on the photonic crystal air bridge structure provided by the invention;
Fig. 2 is the transversary synoptic diagram of the slow optical wave guide structure based on the photonic crystal air bridge structure provided by the invention;
Fig. 3 (a) is the ultra primitive cell structure of waveguide;
Fig. 3 (b) is the 7th subband TE mode profile;
Fig. 3 (c) is dispersion relation (the 7th subband is applied defect state);
Fig. 4 is light field transmission in the photonic crystal slow optical wave guide;
Fig. 5 is waveguide when closing on two round change in radius, and group index is with the variation of frequency;
Fig. 6 is waveguide when closing on two round change in radius, the variation of slower rays zone bandwidth;
When Fig. 7 is the duct width variation, the 7th subband group index variation tendency, d1 to d7 is respectively 0.75W, 0.775W, 0.85W, 0.925W, 1.0W, 1.1W and 1.2W.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
Existing photonic crystal slow optical wave guide; Slower rays perform region (defining group index here greater than 10 zone) is smaller, is generally several nanometers, and adjustment central task wavelength need be through keeping dutycycle; The adjustment lattice period realizes; This is all very high to design and technological requirement, and the different working wavelength needs different technological conditions to realize, perhaps carries out complicated design parameter adjustment and matees certain process conditions.
The present invention proposes a kind of slow optical wave guide structure based on the photonic crystal air bridge structure, this structure is a kind of novel big bandwidth slower rays photonic crystal waveguide structure, comprises vertical structure and transversary.Be a kind of air bridges sandwich construction vertically, be followed successively by air/semiconductor material (like silicon or indium phosphide)/air layer/backing material from top to bottom.Provide vertical TE pattern effective refractive index and be about 2.9 near communication band (1550 nanometers), as shown in Figure 1.The design of transversary adopts the triangular crystal lattice structure as shown in Figure 2 based on this, and the cycle is P, and radius is R.Form waveguide through removing the delegation hole, this waveguide is that dispersion relation analysis finds that its defect state has slow light effect through band structure.
In the present invention, close on the pore radius R1 of delegation through the adjustment waveguide and adjust bandwidth, meanwhile the work centre wavelength also can change, and will carry out the adjustment of work centre wavelength through the adjustment duct width.
This slow optical wave guide structure that the present invention proposes based on the photonic crystal air bridge structure; Be to be the basis with optoelectronic device multi-layer film structure commonly used; In manufacturing process, no matter be silica-based or three or five family's semiconductor InGaAsP systems, can both form this so-called air bridge structure that air blanketing is arranged as shown in Figure 1 through dry method and wet-mixed.Here we to be referred to as vertical structure be exactly air bridge structure as shown in Figure 1 in fact.Photon crystal wave-guide just designs within the second layer from the top down as shown in Figure 1; For guaranteeing vertical single mode condition; This layer thickness is got 250 to 300 nanometers, and triangular crystal lattice (like Fig. 2) cycle P gets 380 to 420 nanometers, and pore radius R gets 0.31P; Thereby make it work in communication band, promptly near 1550 nanometers.
Different with the line defect slow optical wave guide of delivering on the existing document is, the present invention is that R1 is to adjust bandwidth among Fig. 2 through the size that adjustment closes on the hole, and bandwidth refers to the slower rays perform region here, requires to have only a lateral electric field mode to exist in this zone.
The present invention will be that W adjusts the centre wavelength position among Fig. 2 through the adjustment duct width in addition.Photonic crystal realizes that on technology difficulty is very big, generally will be through mask repeatedly, and exposure; Etching could form, and the formation of the aperture of different size, to photoresist; The difference that exposure energy, factors such as etching air-flow require, thus under same process conditions etching different size aperture; Satisfied a kind of size often, can not satisfy another kind, so just need be made as standard with a kind of aperture; Then other different apertures aperture is done correction, if the aperture kind is a lot of like this, the experiment number that needs also can be a lot.
One of Important Thought of the present invention be exactly to the device of different operating centre wavelength in design; Comprise few aperture kind as far as possible; For this need with two kinds fixedly aperture just can design the device of a variety of different centre wavelengths, the present invention here proposes to change duct width and adjusts the centre wavelength position.
Fig. 3 is through being with the band structure of the photonic crystal slow optical wave guide that the instrument of finding the solution obtains, wherein (a) ultra primitive cell structure of waveguide for adopting in calculating; (b) be TE pattern the 7th subband optical field distribution; (c) be dispersion relation figure, the zone is the photon band gap district shown in its bend, and the 7th subband is applied defect state from bottom to top, and the slower rays area definition is that group index is regional greater than 10 single mode operation.Fig. 4 be to slow optical wave guide at work cardiac wave length be the slower rays laser propagation effect figure that the Finite Difference-Time Domain branch obtains.Fig. 5 is that the 7th subband model group speed is with the wavelength change situation when variation closes on pore radius R1, and the perform region reduces to move to the long wave direction with radius R 1, and meanwhile slower rays perform region scope is that bandwidth also changes, and is as shown in Figure 6.When closing on pore radius R1 and reach 0.7R, bandwidth has reached 50 nanometers, continues to reduce, though bandwidth increases high wave vector place's chromatic dispersion this moment.
Curve is upturned, and forms two points on the corresponding dispersion curve of a frequency, is non-single mode operation.When adjustment duct width W, centre wavelength can move to short wavelength's direction along with the reduction of width, and this moment, orifice size did not change, and is as shown in Figure 7, can utilize this result, through changing duct width the centre wavelength position regulated.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the slow optical wave guide structure based on the photonic crystal air bridge structure is characterized in that, this slow optical wave guide structure adopts the line defect photon crystal structure; Comprise vertical structure and transversary, vertical structure is the air bridges sandwich construction, is followed successively by air layer/semiconductor material layer/air layer/substrate material layer from top to bottom; Transversary adopts the triangular crystal lattice structure; Cycle is P, and radius is R, forms waveguide through removing the delegation hole; Wherein, this slow optical wave guide structure is closed on the radius in hole and the width of waveguide changes slower rays zone bandwidth and centre wavelength position through the adjustment line defect, and line defect to close on the diameter in hole littler than the diameter in other holes of array;
Wherein, said adjustment line defect is closed on the radius in hole and the width of waveguide changes slower rays zone bandwidth and centre wavelength position, comprising: when closing on the pore radius variation, slower rays operation wavelength position and scope all will change; When waveguide closed on the first round radius and diminishes, the slower rays working range can move to the long wave direction, and bandwidth also will increase gradually, but bandwidth is increased to a certain degree, had been not single mode just; When duct width dwindled, the slower rays perform region can be moved to the shortwave direction, and bandwidth of operation also will change.
2. the slow optical wave guide structure based on the photonic crystal air bridge structure according to claim 1 is characterized in that, the semiconductor material layer in the said vertical structure adopts silicon or indium phosphide.
3. the slow optical wave guide structure based on the photonic crystal air bridge structure according to claim 1 is characterized in that the semiconductor material layer in the said vertical structure has photon crystal wave-guide, and this semiconductor material layer thickness is 250 to 300 nanometers.
4. the slow optical wave guide structure based on the photonic crystal air bridge structure according to claim 1; It is characterized in that, the triangular crystal lattice structure that said transversary adopts, its cycle P is 380 to 420 nanometers; Pore radius R is 0.31P, thereby makes it work near the communication band of 1550 nanometers.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101976801B (en) * | 2010-09-08 | 2012-05-02 | 中国科学院半导体研究所 | Semiconductor amplifier of transverse magnetic polarization photonic crystal slow-light effect |
| CN102419480B (en) * | 2011-12-30 | 2013-01-23 | 中国科学院长春光学精密机械与物理研究所 | Two-stage beam shrinkage system based on photonic crystal resonant cavity and manufacturing method for two-stage beam shrinkage system |
| CN102419479B (en) * | 2011-12-30 | 2013-01-23 | 中国科学院长春光学精密机械与物理研究所 | Two-stage beam shrinkage system based on photonic crystal resonant cavity |
| CN102759775B (en) * | 2012-07-10 | 2015-06-10 | 东北大学 | Photonic crystal groove waveguide structure capable of generating slow light of broadband |
| CN103048845B (en) * | 2013-01-11 | 2014-11-26 | 青岛大学 | Slow light waveguide device of photonic crystal based on two-dimensional silicon |
| CN103176328B (en) * | 2013-04-11 | 2015-04-08 | 青岛大学 | Two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device |
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| US7042014B2 (en) * | 2003-07-25 | 2006-05-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| CN1846157A (en) * | 2003-08-29 | 2006-10-11 | 国立大学法人京都大学 | 2-dimensional photonic crystal having air bridge structure and its manufacturing method |
| CN101149289A (en) * | 2006-09-22 | 2008-03-26 | 中国科学院半导体研究所 | Measuring method and device for slowing light velocity effect of photon crystal |
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| JP4398275B2 (en) * | 2003-11-25 | 2010-01-13 | 株式会社リコー | Light control element |
| CN101887144B (en) * | 2009-05-13 | 2012-07-04 | 中国科学院半导体研究所 | Slow light effect photonic crystal waveguide structure for eliminating group velocity dispersion |
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Patent Citations (3)
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|---|---|---|---|---|
| US7042014B2 (en) * | 2003-07-25 | 2006-05-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| CN1846157A (en) * | 2003-08-29 | 2006-10-11 | 国立大学法人京都大学 | 2-dimensional photonic crystal having air bridge structure and its manufacturing method |
| CN101149289A (en) * | 2006-09-22 | 2008-03-26 | 中国科学院半导体研究所 | Measuring method and device for slowing light velocity effect of photon crystal |
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