CN103176328B - Two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device - Google Patents
Two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device Download PDFInfo
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- CN103176328B CN103176328B CN201310124391.3A CN201310124391A CN103176328B CN 103176328 B CN103176328 B CN 103176328B CN 201310124391 A CN201310124391 A CN 201310124391A CN 103176328 B CN103176328 B CN 103176328B
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Abstract
The invention belongs to the technical field of optical equipment manufacturing, and relates to a two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device. Monosymmetrical circular-segment-shaped scattering elements are sequentially arranged and etched on the surface of a two-dimensional silicon wafer along the direction of the long edge of the two-dimensional silicon wafer, and a row of positions at which no monosymmetrical circular-segment-shaped scattering element is etched is left at a symmetric axis of the two-dimensional silicon wafer so as to form a line defect; the centers of adjacent monosymmetrical circular-segment-shaped scattering elements are arranged in the shape of an equilateral hexagon on the surface of the two-dimensional silicon wafer, and each monosymmetrical circular-segment-shaped scattering element is formed by docking two semicircular segments; the digged monosymmetrical circular-segment-shaped scattering elements respectively and sequentially arranged on the two-dimensional silicon wafer are of a transparent structure; and the direction of the line defect is parallel to the direction of a long axis of the monosymmetrical circular-segment-shaped scattering element. The two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device is simple in structure, small in size, low in cost, high in stability, high in efficiency, simple and feasible, high in group refractive index, large in slow optical bandwidth and good in signal fidelity, and can be widely applied to the technical field of solar photovoltaic conversion and photonic crystal luminescence.
Description
Technical field:
The invention belongs to optical device manufacturing technology field, relate to the two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide structure, particularly a kind of two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device of a kind of high group index, mono-symmetry, circular segment scattering unit formation.
Background technology:
Slow light effect is that electromagnetic wave has the group velocity more much lower than the light velocity, and photonic crystal slower rays structure, because its structure miniature compact, loss are few and the feature such as room temperature-operating, has unrivaled advantage in actual applications.Existing photonic crystal slow optical wave guide mainly contains linear defect wave-guide and point defect coupled waveguide two kinds of forms, and the light wave group velocity in linear defect wave-guide is general comparatively large, but dispersion is relatively little; Point defect coupled waveguide can realize less group velocity, but its dispersion is larger.At present, most research concentrates on and obtains the less structure of lower group velocity, dispersion: one is by increasing or reduce the width of line defect to linear defect wave-guide, parallel slit is added in the middle of line defect, the radius of adjustment airport, introduce chirp waveguide or heterojunction structure, by the two emptying pores near line defect along modes such as wave guide direction translations; Two is to point defect coupled waveguide by adjustment microcavity radius, adjusts the radius in its surrounding air hole simultaneously, change the distance of adjacent microcavity or two defect microcavity, change the methods such as the position of defect column radius and surrounding medium post thereof simultaneously at adjustment microcavity radius; Also two kinds of defect modes combine by some research, as introduced multiple microcavity or single quantum dot microcavity etc. of high quality factor Q in linear defect wave-guide.But, above-mentioned research method concentrates on the periodic arrangement aspect of structure, the scattering unit adopted is cylindrical scattering unit mainly, a small amount of research is only had to change the shape of scattering unit, more seldom use the scattering meta structure of mono-symmetry, and obtaining ten parts or 1/tens that effective group index mostly also is the light velocity, these structures are applicable to the technical field of information processing such as optical time delay line and impact damper.For being applied to fluorescence excitation and promoting that the slower rays structure in the fields such as opto-electronic conversion is different with the requirement of the slow optical wave guide being applied to information transmission, the slower rays structural requirement envelope eapsulotomy transmission of transmission light information, must reduce dispersion effectively; Be applied to fluorescence excitation luminous and promote the slower rays structure in solar energy photoelectric conversion field, mainly Energy Transfer and conversion, pursuit be low group velocity (high group index), and the problem of less consideration dispersion aspect.
Mono-symmetry scattering unit is a kind of new development of photon crystal structure, in order to optimize the relation in forbidden band and slower rays, mono-symmetry scattering unit adds the structural parameters of scattering unit, and broken the pattern of its original symmetric figure scattering unit, change structure into mono-symmetry by twin shaft symmetry, between the research not yet of current this respect, have report.Existing research proves, the slower rays structure of high group index can be used for various efficient illumination by fluorescence excitation, and have the sandwich construction of slow light effect, greatly can increase the light travel-time in the structure, thus improve the utilization of electricity conversion and promotion sun power.So, if the linear defect wave-guide that mono-symmetry scattering unit builds can realize high group index, just can be applied to fluorescence excitation and promote the fields such as solar energy photoelectric conversion.The linear defect wave-guide that mono-symmetry scattering unit builds has that parameter is many, volume is very little, be easy to make and the advantage such as integrated, slower rays effect can be controlled by project organization, working environment does not have particular/special requirement, can work at normal temperatures, is convenient to and fibre system coupling matching etc.Therefore, seek the two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device designing a kind of high group index, mono-symmetry, circular segment scattering unit formation, drive the breakthrough of the aspect such as fluorescence radiation and solar energy photoelectric conversion application, for slower rays provides new structure and direction in the field such as Conversion of Energy and absorption, there is important application value realistic.
Summary of the invention:
The object of the invention is to the shortcoming overcoming prior art existence, seek to design a kind of two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device with high group index, mono-symmetry, circular segment scattering unit formation, drive the breakthrough of the aspect such as fluorescence radiation and solar energy photoelectric conversion application, for slower rays provides new structure and direction in the field such as Conversion of Energy and absorption, realize the slow light effect of high group index, the group velocity of light is reduced, can be applicable to improve multiple field such as solar energy photoelectric conversion or photonic crystal light-emitting efficiency.
To achieve these goals, agent structure of the present invention comprises two-dimentional silicon chip, mono-symmetry circular segment scattering unit, line defect, the long limit of silicon chip and silicon chip minor face; On the surface of the tabular two dimension silicon chip of rectangle structure, along the direction order arrangement etching on the long limit of silicon chip of two-dimentional silicon chip, to be shaped with two-dimentional silicon chip center line be axis of symmetry that 6-10 arranges mono-symmetry circular segment scattering unit, and the axis of symmetry place of two-dimentional silicon chip leaves a row does not have etching be shaped with mono-symmetry circular segment scattering unit and form line defect; Often arrange 90-100 the mono-symmetry circular segment scattering unit of mono-symmetry circular segment scattering unit equidistantly digging and being shaped with fixed sturcture arrangement; Center arrangement in equilateral hexagon on the surface of two-dimentional silicon chip of adjacent mono-symmetry circular segment scattering unit, hexagonal length of side equals grating constant, and grating constant is determined by the operation wavelength of light, and operation wavelength is 1550nm, and grating constant is 300 ~ 350nm; Mono-symmetry circular segment scattering unit is that two semicircles lack involutory formation, and its major axis radius is all b, and minor axis radius is respectively c
1and c
2, two minor axis radius c
1and c
2can change; Mono-symmetry circular segment scattering unit two dimension silicon chip being arranged in order respectively the system of digging is permeable structures; The direction of line defect is parallel with the long axis direction of mono-symmetry circular segment scattering unit; The circular segment irrelevance e in two faces of mono-symmetry circular segment scattering unit
1and e
2represent, wherein e
1=1-c
1/ b, e
2=1-c
2/ b, grading structure is according to parameter e
1, e
2different values, e
1and e
2span be all 0 ~ 1.
The group index n of apparatus of the present invention
grepresented by formula (1) with the relation of dispersion:
Wherein n
effbe group effective refractive index, c is the light velocity, v
ggroup velocity, k is wave number, and ω is the center angular frequency of incident wave or incident pulse, k=2 π n
eff/ λ, λ are the wavelength of frequency of operation; To the n of slower rays
g> > n
effunder condition, obtain formula (2) by formula (1),
Wherein normalized frequency f is expressed as f=ω a/2 π c, less demanding due to dispersion, n
gvalue keep relative stability.
When the present invention realizes slow light effect, adopt conventional computer system control, infrared light sends rear generation pulse signal by light source, pulse signal enters polarization beam apparatus by becoming linearly polarized light after polarizer, again optical fiber ingoing power amplifier is directly used on a wherein road of pulse signal, optical fiber lens collimation focusing of separately leading up to is incorporated into two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device, pulse signal is after two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device, optical fiber lens is used to be coupled in optical fiber by emergent light, and then ingoing power amplifier, pulse signal is converted to electric signal by photodiode after amplifying the two paths of signals received by power amplifier, then the electric signal after transforming is inputted network analyzer, then the phase place of two paths of signals is compared on the computer systems, draws the phase differential of its envelope, get rid of other disturbing factors, obtain light in photonic crystal slow optical wave guide device by time the phase place change that produces, thus calculate slow light effect.
Compared with prior art, its structure is simple, and volume is little, and cost is low in the present invention, stability is high, and efficiency is high, simple, and group index is high, slower rays band is roomy, and envelope eapsulotomy is good, can be widely used in multiple technical field such as solar energy photoelectric conversion and photonic crystal light-emitting.
Accompanying drawing illustrates:
Fig. 1 is agent structure principle schematic of the present invention.
Fig. 2 is the structural principle schematic diagram of the mono-symmetry circular segment scattering unit that the present invention relates to, and wherein b is scattering unit major axis; c
1and c
2be respectively scattering unit minor axis.
Fig. 3 is the light channel structure principle schematic that apparatus of the present invention realize slow light effect, comprises computer system a, light source b, polarizer c, polarization beam apparatus d, two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device e, power amplifier f, photodiode g and network analyzer h.
Fig. 4 is the graph of relation of normalized frequency f and wave number k in embodiments of the invention, wherein, and e
1=0.3 is constant, e
2from 0.1 to 1.0 changes.
Embodiment:
Also be described further by reference to the accompanying drawings below by embodiment.
Embodiment:
The agent structure of this enforcement comprises two-dimentional silicon chip 1, mono-symmetry circular segment scattering unit 2, line defect 3, the long limit 4 of silicon chip and silicon chip minor face 5; The 6-10 row mono-symmetry circular segment scattering unit 2 that on the surface of the tabular two dimension silicon chip 1 of rectangle structure, sequentially it is axis of symmetry that arrangement is shaped with two-dimentional silicon chip center line along the direction on the long limit of silicon chip 4 of two-dimentional silicon chip 1, the axis of symmetry place of two-dimentional silicon chip 1 leaves a row and does not etch the first line defect 3 formed of circular segment scattering; Often arrange in mono-symmetry circular segment scattering unit 2 and equidistantly dig 90-100 the mono-symmetry circular segment scattering unit 2 being shaped with fixed sturcture arrangement; Center arrangement in equilateral hexagon on the surface of two-dimentional silicon chip 1 of mono-symmetry circular segment scattering unit 2, hexagonal length of side equals grating constant, and grating constant is determined by the operation wavelength of light, and operation wavelength is 1550nm, and grating constant is 300 ~ 350nm; Mono-symmetry circular segment scattering unit 2 is that two semicircles lack involutory formation, and its major axis radius is all b, and minor axis radius is respectively c
1and c
2, two minor axis radius c
1and c
2can change; The mono-symmetry circular segment scattering unit 2 two dimension silicon chip 1 being arranged in order respectively the system of digging is permeable structures; The direction of line defect 3 is parallel with the long axis direction of mono-symmetry circular segment scattering unit 2; The circular segment irrelevance e in two faces of mono-symmetry circular segment scattering unit 2
1and e
2represent, wherein e
1=1-c
1/ b, e
2=1-c
2/ b, grading structure is according to parameter e
1, e
2different values, e
1and e
2span be all 0 ~ 1.
When the present embodiment realizes slow light effect, conventional computer system a is adopted to control, infrared light sends rear generation pulse signal by light source b, pulse signal enters polarization beam apparatus d by becoming linearly polarized light after polarizer c, again optical fiber ingoing power amplifier f is directly used on a wherein road of pulse signal, optical fiber lens collimation focusing of separately leading up to is incorporated into two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device e, pulse signal is after two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device e, optical fiber lens is used to be coupled in optical fiber by emergent light, and then ingoing power amplifier f, pulse signal is converted to electric signal by photodiode g after amplifying the two paths of signals received by power amplifier f, then the electric signal after transforming is inputted network analyzer h, then the phase place of two paths of signals is compared on computer system a, draws the phase differential of its envelope, get rid of other disturbing factors, obtain light in photonic crystal slow optical wave guide device by time the phase place change that produces, thus calculate slow light effect.
Claims (2)
1. a two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device, agent structure comprises two-dimentional silicon chip, line defect, the long limit of silicon chip and silicon chip minor face, and the axis of symmetry place of two-dimentional silicon chip leaves a row does not have etching be shaped with mono-symmetry circular segment scattering unit and form line defect; It is characterized in that agent structure also comprises mono-symmetry circular segment scattering unit, on the surface of the tabular two dimension silicon chip of rectangle structure, along the direction order arrangement etching on the long limit of silicon chip of two-dimentional silicon chip, to be shaped with two-dimentional silicon chip center line be axis of symmetry that 6-10 arranges mono-symmetry circular segment scattering unit, often arranges that mono-symmetry circular segment scattering unit equidistantly to dig 90-100 the mono-symmetry circular segment scattering being shaped with fixed sturcture arrangement first; Center arrangement in equilateral hexagon on the surface of two-dimentional silicon chip of adjacent mono-symmetry circular segment scattering unit, hexagonal length of side equals grating constant, and grating constant is determined by the operation wavelength of light, and operation wavelength is 1550nm, and grating constant is 300 ~ 350nm; Mono-symmetry circular segment scattering unit is that two semicircles lack involutory formation, and its major axis radius is all b, and minor axis radius is respectively c
1and c
2, two minor axis radius c
1and c
2can change; Mono-symmetry circular segment scattering unit two dimension silicon chip being arranged in order respectively the system of digging is permeable structures; The direction of line defect is parallel with the long axis direction of mono-symmetry circular segment scattering unit; The circular segment irrelevance e in two faces of mono-symmetry circular segment scattering unit
1and e
2represent, wherein e
1=1-c
1/ b, e
2=1-c
2/ b, grading structure is according to parameter e
1, e
2different values, e
1and e
2span be all [0,1), and e
1≠ e
2.
2. two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device according to claim 1, when it is characterized in that realizing slow light effect, adopt conventional computer system control, infrared light sends rear generation pulse signal by light source, pulse signal enters polarization beam apparatus by becoming linearly polarized light after polarizer, again optical fiber ingoing power amplifier is directly used on a wherein road of pulse signal, optical fiber lens collimation focusing of separately leading up to is incorporated into two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device, pulse signal is after two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device, optical fiber lens is used to be coupled in optical fiber by emergent light, and then ingoing power amplifier, pulse signal is converted to electric signal by photodiode after amplifying the two paths of signals received by power amplifier, then the electric signal after transforming is inputted network analyzer, then the phase place of two paths of signals is compared on the computer systems, draws the phase differential of its envelope, get rid of other disturbing factors, obtain light in photonic crystal slow optical wave guide device by time the phase place change that produces, thus calculate slow light effect.
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| CN104241428B (en) * | 2014-09-28 | 2016-08-24 | 青岛大学 | A kind of two-dimentional silica-based micro-nano photonic crystal solaode |
| CN107918170B (en) * | 2016-10-08 | 2020-07-31 | 青岛大学 | Photonic crystal slow light waveguide device and slow light effect obtaining method |
| CN110488413B (en) * | 2019-08-19 | 2020-09-11 | 南京邮电大学 | Polarization-independent slow optical waveguide device based on two-dimensional photonic crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1219984A2 (en) * | 2000-12-27 | 2002-07-03 | Nippon Telegraph and Telephone Corporation | Photonic crystal waveguide |
| EP1136853B1 (en) * | 2000-03-24 | 2006-09-13 | TDK Corporation | Two-dimensional photonic crystal waveguides and wavelength demultiplexers |
| CN101963736A (en) * | 2010-08-11 | 2011-02-02 | 中国科学院半导体研究所 | Slow light waveguide structure based on photonic crystal air bridge structure |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1136853B1 (en) * | 2000-03-24 | 2006-09-13 | TDK Corporation | Two-dimensional photonic crystal waveguides and wavelength demultiplexers |
| EP1219984A2 (en) * | 2000-12-27 | 2002-07-03 | Nippon Telegraph and Telephone Corporation | Photonic crystal waveguide |
| CN101963736A (en) * | 2010-08-11 | 2011-02-02 | 中国科学院半导体研究所 | Slow light waveguide structure based on photonic crystal air bridge structure |
Non-Patent Citations (2)
| Title |
|---|
| Improving slow light effect in photonic crystal line defect waveguide by using eye-shaped scatterers;Yong Wan,et al.;《Optics Communications》;20121224;第2部分、图1 * |
| 调整圆弓形散射元参数实现低群速和低色散的慢光效应;万勇等;《中国激光》;20130131;全文 * |
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Inventor after: Wan Xiuxia Inventor after: Wan Yong Inventor after: Ge Shengbo Inventor after: Liu Peichen Inventor after: Guo Yue Inventor after: Jia Minghui Inventor before: Wan Yong Inventor before: Ge Shengbo Inventor before: Liu Peichen Inventor before: Guo Yue Inventor before: Jia Minghui |
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