CN103176328A - Two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device - Google Patents
Two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device Download PDFInfo
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- CN103176328A CN103176328A CN2013101243913A CN201310124391A CN103176328A CN 103176328 A CN103176328 A CN 103176328A CN 2013101243913 A CN2013101243913 A CN 2013101243913A CN 201310124391 A CN201310124391 A CN 201310124391A CN 103176328 A CN103176328 A CN 103176328A
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Abstract
The invention belongs to the technical field of optical equipment manufacturing, and relates to a two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device. Monosymmetrical circular-segment-shaped scattering elements are sequentially arranged and etched on the surface of a two-dimensional silicon wafer along the direction of the long edge of the two-dimensional silicon wafer, and a row of positions at which no monosymmetrical circular-segment-shaped scattering element is etched is left at a symmetric axis of the two-dimensional silicon wafer so as to form a line defect; the centers of adjacent monosymmetrical circular-segment-shaped scattering elements are arranged in the shape of an equilateral hexagon on the surface of the two-dimensional silicon wafer, and each monosymmetrical circular-segment-shaped scattering element is formed by docking two semicircular segments; the digged monosymmetrical circular-segment-shaped scattering elements respectively and sequentially arranged on the two-dimensional silicon wafer are of a transparent structure; and the direction of the line defect is parallel to the direction of a long axis of the monosymmetrical circular-segment-shaped scattering element. The two-dimensional silicon substrate photonic crystal line-defect slow optical waveguide device is simple in structure, small in size, low in cost, high in stability, high in efficiency, simple and feasible, high in group refractive index, large in slow optical bandwidth and good in signal fidelity, and can be widely applied to the technical field of solar photovoltaic conversion and photonic crystal luminescence.
Description
Technical field:
The invention belongs to optical device manufacturing technology field, relate to a kind of high group index, mono-symmetry, the first two-dimentional silicon based photon crystal line defect slow optical wave guide structure, particularly a kind of two-dimentional silicon based photon crystal line defect slow optical wave guide device that consists of of circular segment scattering.
Background technology:
Slow light effect is that electromagnetic wave has the group velocity more much lower than the light velocity, photonic crystal slower rays structure due to the small compactness of its structure, loss is few and the characteristics such as room temperature-operating, has in actual applications unrivaled advantage.Existing photonic crystal slow optical wave guide mainly contains linear defect wave-guide and two kinds of forms of point defect coupled waveguide, and the light wave group velocity in linear defect wave-guide is generally larger, but the dispersion less; The point defect coupled waveguide can be realized less group velocity, but its dispersion is larger.At present, most researchs concentrate on and obtain lower group velocity, the less structure of dispersion: the one, to the width of linear defect wave-guide by increase or minimizing line defect, add the parallel slit in the middle of line defect, adjust the radius of airport, introduce chirp waveguide or heterojunction structure, will be near two emptying pores of line defect along modes such as wave guide direction translations; The 2nd, the point defect coupled waveguide by adjusting the microcavity radius, is being adjusted the microcavity radius and is adjusting simultaneously the radius in its surrounding air hole, change distance or two defective microcavity of adjacent microcavity, change simultaneously the methods such as position of defective column radius and surrounding medium post thereof; Also some research combines two kinds of defect modes, as a plurality of microcavitys of introducing high quality factor Q in linear defect wave-guide or single quantum dot microcavity etc.But, above-mentioned research method concentrates on the periodic arrangement aspect of structure, the scattering unit that adopts is mainly cylindrical scattering unit, only have a small amount of research to change the shape of scattering unit, more seldom use the scattering meta structure of mono-symmetry, and obtaining ten parts or 1/tens that effective group index also mostly is the light velocity, these structures are applicable to the technical field of information processing such as optical time delay line and impact damper.Different with the requirement of the slow optical wave guide that is applied to communication with the slower rays structure that promotes the field such as opto-electronic conversion for being applied to fluorescence excitation, the slower rays structural requirement signal fidelity of transmission light information transmits, and must effectively reduce dispersion; Being applied to fluorescence excitation luminous and promote the slower rays structure in solar energy photoelectric conversion field, is mainly Energy Transfer and conversion, pursuit be low group velocity (high group index), and the problem of less consideration dispersion aspect.
Mono-symmetry scattering unit is a kind of new development of photon crystal structure, in order to optimize the relation of forbidden band and slower rays, mono-symmetry scattering unit has increased the structural parameters of scattering unit, and broken the pattern of its original symmetric figure scattering unit, change structure into mono-symmetry by the twin shaft symmetry, between the research not yet of this respect, report is arranged at present.Existing research proves, the slower rays structure of high group index can be used for various efficient illumination by fluorescence excitation, and the sandwich construction of slow light effect is arranged, can greatly increase the travel-time of light in structure, thereby improve electricity conversion and promote the utilization of sun power.So, if the first linear defect wave-guide that builds of mono-symmetry scattering can be realized high group index, just can be applied to the fields such as fluorescence excitation and promotion solar energy photoelectric conversion.The linear defect wave-guide that mono-symmetry scattering unit builds has that parameter is many, volume is very little, be easy to making and the advantage such as integrated, can control the slower rays effect by project organization, working environment does not have specific (special) requirements, can work at normal temperatures, is convenient to and fibre system coupling matching etc.Therefore, seek to design a kind of high group index, mono-symmetry, the first two-dimentional silicon based photon crystal line defect slow optical wave guide device that consists of of circular segment scattering, drive the breakthrough of the aspects such as fluorescence radiation and solar energy photoelectric conversion application, new structure and direction is provided in fields such as Conversion of Energy and absorptions for slower rays, has important application value realistic.
Summary of the invention:
The object of the invention is to overcome the shortcoming that prior art exists, seek to design a kind of have high group index, mono-symmetry, the first two-dimentional silicon based photon crystal line defect slow optical wave guide device that consists of of circular segment scattering, drive the breakthrough of the aspects such as fluorescence radiation and solar energy photoelectric conversion application, new structure and direction is provided in fields such as Conversion of Energy and absorptions for slower rays, realize the slow light effect of high group index, the group velocity of light is reduced, can be applicable to improve a plurality of fields such as solar energy photoelectric conversion or photonic crystal light-emitting efficient.
To achieve these goals, agent structure of the present invention comprises two-dimentional silicon chip, the scattering of mono-symmetry circular segment unit, line defect, the long limit of silicon chip and silicon chip minor face; Be shaped with 6-10 row mono-symmetry circular segment scattering unit take two-dimentional silicon chip center line as axis of symmetry along the direction etching arranged sequentially on the silicon chip of two-dimentional silicon chip long limit on the surface of the tabular two-dimentional silicon chip of rectangle structure, the axis of symmetry place of two-dimentional silicon chip leaves a row does not have etching be shaped with mono-symmetry circular segment scattering unit and form line defect; It is first that the first equal intervals of every row's mono-symmetry circular segment scattering is dug 90-100 the mono-symmetry circular segment scattering that is shaped with the fixed sturcture arrangement; The center of adjacent mono-symmetry circular segment scattering unit is equilateral hexagon on the surface of two-dimentional silicon chip arranges, and hexagonal length of side equals grating constant, and grating constant determined by the operation wavelength of light, and operation wavelength is 1550nm, and grating constant is 300～350nm; Mono-symmetry circular segment scattering unit is that two semicircles lack involutory formation, and its major axis radius is all b, and minor axis radius is respectively c
1And c
2, two minor axis radius c
1And c
2Can change; The mono-symmetry circular segment scattering unit that two dimension is arranged in order respectively the system of digging on silicon chip is permeable structures; The direction of line defect is parallel with the long axis direction of mono-symmetry circular segment scattering unit; The circular segment irrelevance e of two faces of mono-symmetry circular segment scattering unit
1And e
2Expression, wherein e
1=1-c
1/ b, e
2=1-c
2/ b, grading structure is according to parameter e
1, e
2Different values, e
1And e
2Span be all 0～1.
The group index n of apparatus of the present invention
gRepresented by formula (1) with the relation of dispersion:
N wherein
effBe group effective refractive index, c is the light velocity, v
gGroup velocity, k is wave number, ω is the central angle frequency of incident wave or incident pulse, k=2 π n
eff/ λ, λ are the wavelength of frequency of operation; N to slower rays
g＞＞n
effUnder condition, obtain formula (2) by formula (1),
Wherein normalized frequency f is expressed as f=ω a/2 π c, less demanding due to dispersion, n
gValue keep relative stability.
when the present invention realizes slow light effect, adopt conventional computer system control, infrared light sends rear generation pulse signal by light source, pulse signal becomes linearly polarized light after by polarizer and enters polarization beam apparatus, again pulse signal wherein one the tunnel directly used optical fiber ingoing power amplifier, another road is incorporated into two-dimentional silicon based photon crystal line defect slow optical wave guide device by the optical fiber lens collimation focusing, pulse signal is through after two-dimentional silicon based photon crystal line defect slow optical wave guide device, use optical fiber lens that emergent light is coupled in optical fiber, and then ingoing power amplifier, power amplifier is converted to electric signal by photodiode with pulse signal after the two paths of signals that receives is amplified, then the input of the electric signal after transforming network analyzer, then the phase place of two paths of signals compared on computer system, draws the phase differential of its envelope, get rid of other disturbing factors, obtain light in photonic crystal slow optical wave guide device by the time phase place that produces change, thereby calculate slow light effect.
The present invention compared with prior art, it is simple in structure, volume is little, cost is low, stability is high, and efficient is high, and is simple, and group index is high, the slower rays band is roomy, and the signal fidelity is good, can be widely used in a plurality of technical fields such as solar energy photoelectric conversion and photonic crystal light-emitting.
Description of drawings:
Fig. 1 is agent structure principle schematic of the present invention.
Fig. 2 is the structural principle schematic diagram of the mono-symmetry circular segment scattering unit that the present invention relates to, and wherein b is scattering unit major axis; c
1And c
2Be respectively the first minor axis of scattering.
Fig. 3 is the light channel structure principle schematic that apparatus of the present invention realize slow light effect, comprises computer system a, light source b, polarizer c, polarization beam apparatus d, two-dimentional silicon based photon crystal line defect slow optical wave guide device e, power amplifier f, photodiode g and network analyzer h.
Fig. 4 is the graph of relation of normalized frequency f and wave number k in embodiments of the invention, wherein, and e
1=0.3 is constant, e
2From 0.1 to 1.0 changes.
Embodiment:
Also be described further by reference to the accompanying drawings below by embodiment.
Embodiment:
The agent structure of this enforcement comprises two-dimentional silicon chip 1, the scattering of mono-symmetry circular segment unit 2, line defect 3, the long limit 4 of silicon chip and silicon chip minor face 5; On the surface of the tabular two-dimentional silicon chip 1 of rectangle structure, along the direction on the silicon chip of the two-dimentional silicon chip 1 long limit 4 6-10 row mono-symmetry circular segment scattering unit 2 that is shaped with take two-dimentional silicon chip center line as axis of symmetry arranged sequentially, the axis of symmetry place of two-dimentional silicon chip 1 leaves the line defect 3 that a row does not have etching circular segment scattering unit to form; Every row's mono-symmetry circular segment scattering unit 2 equal intervals are dug 90-100 the mono-symmetry circular segment scattering unit 2 that is shaped with that fixed sturcture arranges; The center of mono-symmetry circular segment scattering unit 2 is equilateral hexagon on the surface of two-dimentional silicon chip 1 arranges, and hexagonal length of side equals grating constant, and grating constant is definite by the operation wavelength of light, and operation wavelength is 1550nm, and grating constant is 300～350nm; Mono-symmetry circular segment scattering unit 2 is that two semicircles lack involutory formation, and its major axis radius is all b, and minor axis radius is respectively c
1And c
2, two minor axis radius c
1And c
2Can change; The mono-symmetry circular segment scattering first 2 that is arranged in order respectively the system of digging on two dimension silicon chip 1 is permeable structures; The direction of line defect 3 is parallel with the long axis direction of mono-symmetry circular segment scattering unit 2; The circular segment irrelevance e of two faces of mono-symmetry circular segment scattering unit 2
1And e
2Expression, wherein e
1=1-c
1/ b, e
2=1-c
2/ b, grading structure is according to parameter e
1, e
2Different values, e
1And e
2Span be all 0～1.
when the present embodiment is realized slow light effect, adopt conventional computer system a to control, infrared light sends rear generation pulse signal by light source b, pulse signal becomes linearly polarized light after by polarizer c and enters polarization beam apparatus d, again pulse signal wherein one the tunnel directly used optical fiber ingoing power amplifier f, another road is incorporated into two-dimentional silicon based photon crystal line defect slow optical wave guide device e by the optical fiber lens collimation focusing, pulse signal is through after two-dimentional silicon based photon crystal line defect slow optical wave guide device e, use optical fiber lens that emergent light is coupled in optical fiber, and then ingoing power amplifier f, power amplifier f is converted to electric signal by photodiode g with pulse signal after the two paths of signals that receives is amplified, then the input of the electric signal after transforming network analyzer h, then the phase place of two paths of signals compared on computer system a, draws the phase differential of its envelope, get rid of other disturbing factors, obtain light in photonic crystal slow optical wave guide device by the time phase place that produces change, thereby calculate slow light effect.
Claims (2)
1. two-dimentional silicon based photon crystal line defect slow optical wave guide device is characterized in that agent structure comprises two-dimentional silicon chip, the scattering of mono-symmetry circular segment unit, line defect, the long limit of silicon chip and silicon chip minor face; Be shaped with 6-10 row mono-symmetry circular segment scattering unit take two-dimentional silicon chip center line as axis of symmetry along the direction etching arranged sequentially on the silicon chip of two-dimentional silicon chip long limit on the surface of the tabular two-dimentional silicon chip of rectangle structure, the axis of symmetry place of two-dimentional silicon chip leaves a row does not have etching be shaped with mono-symmetry circular segment scattering unit and form line defect; It is first that the first equal intervals of every row's mono-symmetry circular segment scattering is dug 90-100 the mono-symmetry circular segment scattering that is shaped with the fixed sturcture arrangement; The center of adjacent mono-symmetry circular segment scattering unit is equilateral hexagon on the surface of two-dimentional silicon chip arranges, and hexagonal length of side equals grating constant, and grating constant determined by the operation wavelength of light, and operation wavelength is 1550nm, and grating constant is 300～350nm; Mono-symmetry circular segment scattering unit is that two semicircles lack involutory formation, and its major axis radius is all b, and minor axis radius is respectively c
1And c
2, two minor axis radius c
1And c
2Can change; The mono-symmetry circular segment scattering unit that two dimension is arranged in order respectively the system of digging on silicon chip is permeable structures; The direction of line defect is parallel with the long axis direction of mono-symmetry circular segment scattering unit; The circular segment irrelevance e of two faces of mono-symmetry circular segment scattering unit
1And e
2Expression, wherein e
1=1-c
1/ b, e
2=1-c
2/ b, grading structure is according to parameter e
1, e
2Different values, e
1And e
2Span be all 0～1.
2. two-dimentional silicon based photon crystal line defect slow optical wave guide device according to claim 1, when it is characterized in that realizing slow light effect, adopt conventional computer system control, infrared light sends rear generation pulse signal by light source, pulse signal becomes linearly polarized light after by polarizer and enters polarization beam apparatus, again pulse signal wherein one the tunnel directly used optical fiber ingoing power amplifier, another road is incorporated into two-dimentional silicon based photon crystal line defect slow optical wave guide device by the optical fiber lens collimation focusing, pulse signal is through after two-dimentional silicon based photon crystal line defect slow optical wave guide device, use optical fiber lens that emergent light is coupled in optical fiber, and then ingoing power amplifier, power amplifier is converted to electric signal by photodiode with pulse signal after the two paths of signals that receives is amplified, then the input of the electric signal after transforming network analyzer, then the phase place of two paths of signals compared on computer system, draws the phase differential of its envelope, get rid of other disturbing factors, obtain light in photonic crystal slow optical wave guide device by the time phase place that produces change, thereby calculate slow light effect.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241428A (en) * | 2014-09-28 | 2014-12-24 | 青岛大学 | Two-dimensional silicon-based micro-nano photonic crystal solar cell |
| CN107918170A (en) * | 2016-10-08 | 2018-04-17 | 青岛大学 | A kind of photonic crystal slow optical wave guide device and slow light effect acquisition methods |
| CN110488413A (en) * | 2019-08-19 | 2019-11-22 | 南京邮电大学 | A kind of unrelated slow optical wave guide device of polarization based on 2 D photon crystal |
Citations (3)
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| EP1219984A2 (en) * | 2000-12-27 | 2002-07-03 | Nippon Telegraph and Telephone Corporation | Photonic crystal waveguide |
| EP1136853B1 (en) * | 2000-03-24 | 2006-09-13 | TDK Corporation | Two-dimensional photonic crystal waveguides and wavelength demultiplexers |
| CN101963736A (en) * | 2010-08-11 | 2011-02-02 | 中国科学院半导体研究所 | Slow light waveguide structure based on photonic crystal air bridge structure |
-
2013
- 2013-04-11 CN CN201310124391.3A patent/CN103176328B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1136853B1 (en) * | 2000-03-24 | 2006-09-13 | TDK Corporation | Two-dimensional photonic crystal waveguides and wavelength demultiplexers |
| EP1219984A2 (en) * | 2000-12-27 | 2002-07-03 | Nippon Telegraph and Telephone Corporation | Photonic crystal waveguide |
| CN101963736A (en) * | 2010-08-11 | 2011-02-02 | 中国科学院半导体研究所 | Slow light waveguide structure based on photonic crystal air bridge structure |
Non-Patent Citations (2)
| Title |
|---|
| YONG WAN,ET AL.: "Improving slow light effect in photonic crystal line defect waveguide by using eye-shaped scatterers", 《OPTICS COMMUNICATIONS》 * |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104241428A (en) * | 2014-09-28 | 2014-12-24 | 青岛大学 | Two-dimensional silicon-based micro-nano photonic crystal solar cell |
| CN107918170A (en) * | 2016-10-08 | 2018-04-17 | 青岛大学 | A kind of photonic crystal slow optical wave guide device and slow light effect acquisition methods |
| CN110488413A (en) * | 2019-08-19 | 2019-11-22 | 南京邮电大学 | A kind of unrelated slow optical wave guide device of polarization based on 2 D photon crystal |
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| CN103176328B (en) | 2015-04-08 |
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Inventor after: Wan Xiuxia Inventor after: Wan Yong Inventor after: Ge Shengbo Inventor after: Liu Peichen Inventor after: Guo Yue Inventor after: Jia Minghui Inventor before: Wan Yong Inventor before: Ge Shengbo Inventor before: Liu Peichen Inventor before: Guo Yue Inventor before: Jia Minghui |
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