CN109669239A - A kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide - Google Patents
A kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide Download PDFInfo
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- CN109669239A CN109669239A CN201910007794.7A CN201910007794A CN109669239A CN 109669239 A CN109669239 A CN 109669239A CN 201910007794 A CN201910007794 A CN 201910007794A CN 109669239 A CN109669239 A CN 109669239A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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Abstract
The invention discloses a kind of orthogonal division Mode interference FANO resonant structures of photonic crystal waveguide, it includes the 2 D photon crystal line style waveguide that the dielectric posts arrangement by several with refractive index is constituted, 2 D photon crystal line style waveguide includes two waveguide ports and a point defect resonant cavity, two of them waveguide port is separately positioned on the two sides of point defect resonant cavity, the point defect dielectric posts that point defect resonant cavity includes four dielectric posts and a cross section long side perpendicular to waveguide axis and length-width ratio is 2.4~2.6, each two dielectric posts are relatively symmetrically respectively set in the two sides of its point defects dielectric posts, each center of four dielectric posts and point defect dielectric posts is equally spaced from arrangement.Structure of the invention is compact, convenient for controlling the bright mould and dark mould of Fano resonance, is easy to realize with other photon crystal devices integrated.
Description
Technical field
The present invention relates to the distributions of photonic crystal point defect mode and Fano resonance field, and in particular to one kind is by photonic crystal
Fano resonant structure caused by the orthogonal division Mode interference of waveguide.
Background technique
Photonic crystal is always the popular domain that people study optical device in recent years.Photonic crystal is by differing dielectric constant
The crystal structure that is arranged to make up by periodic lattice of material.When electromagnetic wave is propagated in photonic crystal, Bragg diffraction causes
Electromagnetic wave is formed band structure by modulation, and the electromagnetic wave in forbidden band cannot be propagated completely.It is lacked to being introduced in photonic crystal
The guidance and control that may be implemented to electromagnetic wave are fallen into, it is possible thereby to obtain the device of various different function, such as photor crystal laser
Device, filter, sensor etc..
Fano resonance is found in quantum regime at first, and it is existing to have also discovered many Fano resonance in optical field later
As main feature is exactly to have asymmetric line style and extremely narrow line width, can be widely applied to photoswitch, laser, bio-sensing
Etc., one research boom has been started in optical field in recent years.Under normal circumstances, the generation of optics Fano resonance needs two
A condition: a, broadband mould or wider mode of resonance are also bright mould；B, relatively narrow mode of resonance is also dark mould, in narrow mould resonance spectrum
Near point, the phase of two mode waves has the difference of π.After two Mode Couplings, interference, at the frequency that phase difference is π, two
There is a very steep paddy in mode cancellation, that is, occurs a paddy near the resonant frequency of dark mould, and the mutually long part of phase
Then two mode intensities are mutually reinforced, and a spike can be observed at certain frequency.However, existing document report, construction can
The photonic crystal Fano resonance of control requires just to can be carried out limited adjusting using complicated unsymmetric structure.
With the increase of photon crystal device integrated level, the volume requirement to photon crystal device is the smaller the better.If
While miniaturization is with structure is simplified, additionally it is possible to which preferably Fano resonance line style, which is adjusted and is controlled, will make optics
The application study of Fano resonance is further to industrialization.
Summary of the invention
The purpose of the present invention is to provide a kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide, structure letters
Single pair claims, and overcomes above-mentioned deficiency in the prior art, constructs two intersecting waveguides moulds by a point defect micro-cavity, and can
It realizes and resonates the flexible modulation of bright mould and dark mould to Fano.
To achieve the goals above, the present invention provides a kind of photonic crystal waveguide orthogonal division Mode interference FANO resonance knot
Structure, suitable for being arranged in the background media with refractive index comprising:
2 D photon crystal line style waveguide, the 2 D photon crystal line style waveguide is by several media with refractive index
Column arrangement is constituted, and the 2 D photon crystal line style waveguide includes two waveguide ports and a point defect resonant cavity, wherein two
A waveguide port is separately positioned on the two sides of the point defect resonant cavity, and the point defect resonant cavity includes four and given an account of
Matter column and a point defect dielectric posts are given an account of wherein the two sides of the point defect dielectric posts are relatively symmetrically respectively set each two
Each center of matter column, four dielectric posts and the point defect dielectric posts is situated between equally spaced from arrangement, the point defect
The depth-width ratio of the cross section of matter column is 2.4~2.6.Two intersecting waveguides moulds are constructed by the point defect resonant cavity, thus
Realize construction photonic crystal Fano resonance.
Preferably, four dielectric posts and the point defect dielectric posts are arranged in same straight line.
Preferred embodiment in accordance with the present invention, the dielectric posts arrange to form two-dimensional photon by tetragonal or triangular crystal lattice
Crystal.
Preferred embodiment in accordance with the present invention, the refractive index of the background media is less than 1.5.
Preferably, the background media is air, vacuum or foamed material.
The refractive index of preferred embodiment in accordance with the present invention, the dielectric posts is greater than 2.6.
Preferably, the material of the dielectric posts is silicon or GaAs.
Preferably, the cross section of the dielectric posts is round or regular polygon.
Preferred embodiment in accordance with the present invention, the width of the 2 D photon crystal line style waveguide are 2a, length na,
Middle a is the lattice constant of photonic crystal in the 2 D photon crystal line style waveguide, and n is the constant integer not less than 5.
Preferably, the cross section of the point defect dielectric posts is rectangle or ellipse.
The orthogonal division Mode interference Fano resonant structure of the photonic crystal waveguide of the invention is widely used in any electromagnetism
Wave wave band, such as microwave band, millimeter wave band, terahertz wave band, infrared band or visible light wave range.Compared with prior art,
The beneficial effects of the present invention are:
(1) wanting for complicated unsymmetric structure must be had by having broken the adjustable Fano resonant structure of previous photonic crystal
It asks, structure simple symmetric, plays an important role to the volume for reducing optical device；
(2) it can flexibly realize and resonate the regulation of the dark mould of bright mould to Fano, it can more freely and continuously control Fano be total
The form of vibration mould will realize that controllable electric magnetic field device provides more convenient and flexible scheme for future.
The above and other purposes of the present invention, feature, advantage will in the following detailed description, attached drawing and appended
Claim further clarify.
Detailed description of the invention
Fig. 1 is showing for the orthogonal division Mode interference Fano resonant structure of photonic crystal waveguide according to the preferred embodiment of the invention
It is intended to；
Fig. 2 is the light of the orthogonal division Mode interference Fano resonant structure of photonic crystal waveguide according to the preferred embodiment of the invention
Sub-band structure figure；
Fig. 3 is the two of the orthogonal division Mode interference Fano resonant structure of photonic crystal waveguide according to the preferred embodiment of the invention
The distribution map of the electric field of a Defect Modes；
Fig. 4 is the electricity of associative mode when photonic crystal waveguide structure mode according to the preferred embodiment of the invention does not divide
Field pattern；
Fig. 5 is the saturating of the orthogonal division Mode interference Fano resonant structure of photonic crystal waveguide according to the preferred embodiment of the invention
Penetrate spectrum；
In figure: background media 00；Dielectric posts 01；Point defect dielectric posts 02；Point defect dielectric posts cross-sectional height h；Point lacks
Fall into dielectric posts cross-sectional width w；Waveguide port 11；Waveguide port 12；2 D photon crystal line style duct width w1.
Specific embodiment
In the following, being described further in conjunction with attached drawing and specific embodiment to invention, it should be noted that in not phase
Under the premise of conflict, new implementation can be formed between various embodiments described below or between each technical characteristic in any combination
Example.
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below
Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description
Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back
Other technologies scheme from the spirit and scope of the present invention.
It will be understood by those skilled in the art that in exposure of the invention, term " longitudinal direction ", " transverse direction ", "upper",
The orientation or position of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside"
Relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, rather than
The device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, therefore above-mentioned
Term is not considered as limiting the invention.
It is understood that term " one " is interpreted as " at least one " or " one or more ", i.e., in one embodiment,
The quantity of one element can be one, and in a further embodiment, the quantity of the element can be it is multiple, term " one " is no
It can be interpreted as the limitation to quantity.
Referring to Fig. 1 to Fig. 5 of attached drawing, the orthogonal division Mode interference of photonic crystal waveguide according to the preferred embodiment of the invention
FANO resonant structure will be elucidated in following description, be suitable for being arranged in the background media 00 with low-refraction.
The refractive index of the background media 00 is less than 1.5.In the present embodiment, the background media 00 is air.At it
In his possible embodiment, the background media 00 is also possible to medium of other refractive index less than 1.5, such as vacuum, bubble
Foam material etc..
As shown in Fig. 1, the orthogonal division Mode interference FANO resonant structure of the photonic crystal waveguide includes two-dimensional photon crystalline substance
Body line style waveguide, the 2 D photon crystal line style waveguide are made of several arrangements of dielectric posts 01 with refractive index.It is preferred that
Ground, the dielectric posts 01 are evenly distributed in the background media 00.
Preferably, the dielectric posts 01 arrange to form 2 D photon crystal by tetragonal.The dielectric posts 01 it is transversal
Face is circle, and radius is 0.2 μm, and on the x-y plane, cylinder axis is along the z-axis direction for cross section.The material of the dielectric posts 01
Using silicon, refractive index 3.5.
It will be appreciated by persons skilled in the art that in other possible embodiments, the 2 D photon crystal
It can be, but not limited to be arranged by dielectric posts by triangular crystal lattice and be formed, the cross section of the dielectric posts also can be, but not limited to be just more
Side shape, material are also possible to GaAs.
Further, the 2 D photon crystal line style waveguide includes waveguide port 11, waveguide port 12 and a point
Defect resonant cavity, wherein the waveguide port 11 and the waveguide port 12 are separately positioned on the two of the point defect resonant cavity
Side.
The center of the 2 D photon crystal line style waveguide is arranged in the point defect resonant cavity comprising four institutes
Dielectric posts 01 and a point defect dielectric posts 02 are stated, wherein the two sides of the point defect dielectric posts 02 are relatively symmetrically respectively set respectively
Two dielectric posts 01.
Preferably, the cross section of the point defect dielectric posts 02 is rectangle, and depth-width ratio is 2.4~2.6.The point defect
The material of dielectric posts 02 and the dielectric posts 01 are identical, are also silicon, refractive index 3.5.In other possible embodiments, institute
The cross section for stating point defect dielectric posts 02 may be ellipse, and material is also possible to GaAs.
Preferably, each center of four dielectric posts 01 and the point defect dielectric posts 02 is equally spaced from row
Cloth.
Preferably, four dielectric posts 01 and the point defect dielectric posts 02 are arranged in same straight line, to be formed a little
Defect line style resonant cavity.
Fano resonant structure waveguide of the invention respectively corresponds two waveguide ports, i.e., the described waveguide port 11 and waveguide end
Mouth 12, respectively as waveguide entry port and waveguide exit ports.The width w1 of the 2 D photon crystal line style waveguide is 2a,
Length is na, and wherein n is the constant integer not less than 5, and a is that the lattice of photonic crystal in the 2 D photon crystal line style waveguide is normal
Number.In the present embodiment, a is set to 1 μm.
Preferably, 15 n.
Fig. 2 and Fig. 3 are that rectangular dots defective media column 02 is h=1 μm high, Photonic band structure figure at wide w=0.4031 μm and
Mode distributions figure, wherein Fig. 2 uses 7 × 7 waveguiding structures to be calculated.Fig. 4 is rectangular dots defective media column 02
It is h=0.4 μm high, point defect feature mode distribution map of the electric field at wide w=0.1 μm, since point defect dielectric posts are smaller at this time, mould
Formula divides not yet.Fig. 5 be rectangular dots defective media column 02 it is h=1 μm high, wide w take respectively 0.3999 μm, 0.4014 μm,
Transmission spectrum at 0.4029 μm, 0.4044 μm, 0.4059 μm.As shown in Figure 5, the value of w directly affects the line of Fano resonance
Type, illustrating can be by the size of the 02 wide w in cross section of point of adjustment defective media column or the refractive index of point of adjustment defective media column 02
To control the form of Fano mode of resonance.
It will be appreciated by persons skilled in the art that the orthogonal division Mode interference Fano of photonic crystal waveguide of the present invention
Resonant structure is not limited to the above embodiment, such as those skilled in the art's revealed technical solution, and root according to the present invention
Principle, the i.e. operation wavelength Yu photonic crystal lattice constant of Fano resonant structure, photonic crystal are scaled according to photonic crystal equal proportion
In the relationships of the parameters such as medium column dimension meet proportional relation to select respective material；For another example constructed using other proportion structures
Model identical interference generates Fano resonance.
It should be understood by those skilled in the art that foregoing description and the embodiment of the present invention shown in the drawings are only used as illustrating
And it is not intended to limit the present invention.The purpose of the present invention has been fully and effectively achieved.Function and structural principle of the invention exists
It shows and illustrates in embodiment, under without departing from the principle, embodiments of the present invention can have any deformation or modification.
Claims (10)
1. a kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide is situated between suitable for the background with refractive index is arranged in
In matter characterized by comprising
2 D photon crystal line style waveguide, the 2 D photon crystal line style waveguide are arranged by several dielectric posts with refractive index
Cloth is constituted, and the 2 D photon crystal line style waveguide includes two waveguide ports and a point defect resonant cavity, two of them institute
The two sides that waveguide port is separately positioned on the point defect resonant cavity are stated, the point defect resonant cavity includes four dielectric posts
With a point defect dielectric posts, wherein each two media are relatively symmetrically respectively set in the two sides of the point defect dielectric posts
Each center of column, four dielectric posts and the point defect dielectric posts is equally spaced from arrangement, the point defect medium
The depth-width ratio of the cross section of column is 2.4~2.6.
2. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that four
A dielectric posts and the point defect dielectric posts are arranged in same straight line.
3. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that institute
Dielectric posts are stated to arrange to form 2 D photon crystal by tetragonal or triangular crystal lattice.
4. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that institute
The refractive index of background media is stated less than 1.5.
5. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1 or 4, feature exist
In the background media is air, vacuum or foamed material.
6. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that institute
The refractive index for stating dielectric posts is greater than 2.6.
7. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1 or 6, feature exist
In the material of the dielectric posts is silicon or GaAs.
8. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that institute
The cross section of dielectric posts is stated as round or regular polygon.
9. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that institute
The width for stating 2 D photon crystal line style waveguide is 2a, length na, and wherein a is light in the 2 D photon crystal line style waveguide
The lattice constant of sub- crystal, n are the constant integer not less than 5.
10. the orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide according to claim 1, which is characterized in that
The cross section of the point defect dielectric posts is rectangle or ellipse.
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| CN201910007794.7A CN109669239B (en) | 2019-01-04 | 2019-01-04 | Orthogonal splitting mode interference FANO resonance structure of photonic crystal waveguide |
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| CN201910007794.7A CN109669239B (en) | 2019-01-04 | 2019-01-04 | Orthogonal splitting mode interference FANO resonance structure of photonic crystal waveguide |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113295647A (en) * | 2021-05-13 | 2021-08-24 | 山东大学 | Terahertz waveguide sensing device based on Fano resonance coupling resonant cavity and preparation method thereof |
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