CN102062987A - Terahertz modulator and modulation method of tunable resonant cavity of compound-structure photonic crystal - Google Patents
Terahertz modulator and modulation method of tunable resonant cavity of compound-structure photonic crystal Download PDFInfo
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- CN102062987A CN102062987A CN2010105689116A CN201010568911A CN102062987A CN 102062987 A CN102062987 A CN 102062987A CN 2010105689116 A CN2010105689116 A CN 2010105689116A CN 201010568911 A CN201010568911 A CN 201010568911A CN 102062987 A CN102062987 A CN 102062987A
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title abstract description 4
- 230000007547 defect Effects 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims description 23
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 20
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Abstract
The invention relates to a terahertz modulator and a modulation method of a tunable resonant cavity of a compound-structure photonic crystal, in particular to a terahertz modulator of a tunable defect model photonic crystal, wherein a compound-structure square lattice silicon photonic crystal (1), which is a medium column type silicon photonic crystal periodically distributed along an X-Y plane, is formed by nesting a simple-structure round silicon medium column square lattice photonic crystal and a square silicon medium column square lattice photonic crystal. A material of the medium column is silicon and a background material is air. Waveguide areas (2), which are located at two ends of the compound-structure square lattice silicon photonic crystal (1), consist of line defects which are not communicated with each other and formed by two rows of symmetrically alternated round and square silicon medium columns of which the compound-structure square lattice silicon photonic crystals are removed. A point defect resonant cavity (3) is formed by a round medium column constructed by gallium arsenide of a light-control tunable material.
Description
Technical field
The present invention is a kind of terahertz wave modulator (a compound photon crystal structure), and especially a kind of light-controlled tunable chamber type terahertz wave of photon crystal modulator that shakes relates to the technical field of THz wave communication and optical information processing.
Background technology
In the society of current information big bang, data communication service is growing to the demand of bandwidth, the following radio spectrum resources of 300GHz exhausts, and THz wave (100GHz～10THz) is the final stage blank on the frequency spectrum, be applied to following wireless communication field, to solve two-forty, the super wideband wireless access problem trend that is inevitable.Terahertz wave modulator has caused the broad research of Chinese scholars as the key link in the THz wave communication system.Simultaneously, tunable photonic crystal is as a kind of brand-new material, is widely used in various function elements such as the modulator made in the optical communication system, photoswitch, wave filter.Being integrated as of photonic crystal technology and THz wave technology designed a kind of terahertz wave modulator provides new thinking.
According to the difference of modulation mechanism, the terahertz wave of photon crystal modulator mainly is divided into following two classes: photon band gap type and defect model.Wherein photon band gap type terahertz wave modulator is to utilize the change of photon band gap to realize the disconnected, logical of THz wave modulated; And the defect model terahertz wave modulator is to utilize the defective mould displacement of photonic crystal to realize open close modulation to THz wave.And the defect model terahertz wave modulator is better than the modulating performance of photon band gap type terahertz wave modulator.
The light-operated duplex photon crystal tunable chamber terahertz wave modulator that shakes has following advantage: the response speed of modulator reaches nanosecond order, so modulation rate can be up to the GHz magnitude; The insertion loss of modulator is low; It is very big that extinction ratio can reach; The threshold power of control light can reduce greatly, and the stability of modulator and reliability can be guaranteed to a great extent; Volume is very little, is easy to integrated circuit.
The defect model light-controlled tunable chamber terahertz wave of photon crystal modulator that shakes is to introduce light-operated material gallium arsenide at the point defect place of photonic crystal.The vertical X-Z of control light plane is incident on the point defect place, increase along with the control light intensity, gallium arsenide the refractive index imaginary part will take place to change fast because of the absorption of free carrier in the dilute plasma, resonant mode Q value in the photonic crystal point defects resonator cavity will take place dynamically to change, control the starting of oscillation of resonator cavity with this, thereby the switching of THz wave is propagated in control, realizes signal loading on THz wave.
Summary of the invention
Technical matters: the terahertz wave modulator and the modulator approach that the purpose of this invention is to provide a kind of compound photonic crystal based on tunable cavity, it adopts light-operated method, has very high modulation rate, and be defect model, thereby reduced the insertion loss of modulator greatly, extinction ratio has also obtained very big improvement.
Technical scheme: in order to adapt to the development of high speed, ultra broadband THz wave communication system, make terahertz wave modulator have the performance of high and low Insertion Loss of modulation rate and High Extinction Ratio, we have proposed a kind of novel light-operated terahertz wave modulator of the tunable cavity based on the duplex photonic crystal, make it be operated in terahertz wave band, have actual using value; Present most of terahertz wave of photon crystal modulator adopts tunable slowly materials of response time such as liquid crystal, so modulation rate is all very low, only is about 10kHz, has limited it in high speed THz wave Application in Communication Systems; And modulator all adopts band gap migration-type structure, and it is undesirable that it inserts performances such as loss or extinction ratio.We adopt point, line defect unitized construction, and fill light-operated GaAs material at the central point fault location, be achieved defect model, based on the terahertz wave modulator of the duplex photonic crystal of tunable cavity, the modulation rate of modulator is up to 2.5GHz, extinction ratio reaches 42dB, the insertion loss is low to reach 0.2dB, and modulating performance is good.
Duplex terahertz wave of photon crystal modulator based on tunable cavity of the present invention comprises tetragonal duplex silicon photonic crystal, wave guide zone, point defect resonator cavity; Wherein, tetragonal duplex photonic crystal is the medium column type silicon photonic crystal that distributes along the X-Z planar periodic, by the circular silicon medium post tetragonal photonic crystal of simple structure, nested the forming of square silicon medium post tetragonal photonic crystal, the line defect of introducing symmetry at its two ends constitutes wave guide zone, circle medium post is constructed with light-controlled tunable material gallium arsenide in center at the duplex photonic crystal, form the point defect resonator cavity, THz wave is from the lower end input of wave guide zone, and export the upper end of wave guide zone; Control light incides on the defective resonator cavity of central point along the direction perpendicular to the X-Z plane.
Flashlight is a THz wave, and THz wave is from the input of wave guide zone lower end, and export the wave guide zone upper end, and control light is provided or provided by its frequency doubled light by laser instrument commonly used, and control light incides on the defective resonator cavity of central point along the direction perpendicular to the X-Z plane.
The modulator approach of tunable cavity duplex terahertz wave of photon crystal modulator of the present invention is: the Q value tunable characteristic that utilizes photonic crystal point defect resonator cavity, the starting of oscillation of the variation resonant cavity of control resonant mode, and then realize the switching of THz wave is modulated; By changing the size of control light, make the refractive index imaginary part of the light-controlled tunable material gallium arsenide of photonic crystal central point fault location take place to change fast because of the absorption of free carrier in the dilute plasma, thereby the resonant mode Q value of point defect resonator cavity is changed, control the starting of oscillation of resonator cavity with this, and then the switching of control propagation THz wave, realize signal loading on THz wave.
Beneficial effect: it is a kind of based on the shake terahertz wave modulator in chamber of duplex photon crystal tunable, especially a kind of defect model terahertz wave of photon crystal modulator that the present invention proposes.This modulator is in two-dimension square lattice duplex, medium column type silicon photonic crystal, sunken wave guide zone of line and central point defective tunable cavity are combined, wherein wave guide zone provides the effective transmission path of THz wave in photonic crystal, and the point defect resonator cavity of being constructed by light-controlled tunable material gallium arsenide plays resonance and frequency-selecting effect quickly and efficiently.The more important thing is that owing to introduced the light-controlled tunable material, the modulation rate of this terahertz wave modulator is very high, can reach the GHz magnitude, can satisfy the demand of following two-forty, ultra broadband THz wave communication system.
Description of drawings
Fig. 1 has among the figure: tetragonal duplex photon crystal 1, wave guide zone 2, point defect resonator cavity 3 for the structural drawing of terahertz wave of photon crystal modulator of the present invention.THz wave is from the lower end input of wave guide zone 2, and export the upper end of wave guide zone 2.Control light incides on the central point defective resonator cavity 3 along the direction perpendicular to the X-Z plane.
Fig. 2 is not for having, having under the control light situation, the dynamic change figure of the resonant mode Q of point defect resonator cavity place value.Dotted line " not lead to " resonant mode state under for there being control light, and solid line is that " break " situation of resonant mode disappearance under the state of control light is arranged.
Fig. 3 is the energy profile of terahertz wave of photon crystal modulator of the present invention workspace.Output terminal has obtained different THz wave intensity under the situation of not having, have control light.Fig. 3 a is the synoptic diagram of " leading to " state, and Fig. 3 b is the synoptic diagram of " breaking " state.
Embodiment
This tunable cavity duplex terahertz wave of photon crystal modulator comprises tetragonal duplex photon crystal 1, wave guide zone 2, point defect resonator cavity 3; Wherein, tetragonal duplex photon crystal 1 is the medium column type silicon photonic crystal that distributes along the X-Z planar periodic, by the circular silicon medium post tetragonal photonic crystal of simple structure, nested the forming of square silicon medium post tetragonal photonic crystal.Introduce symmetrical line defect at its two ends and constitute wave guide zone 2, adopt light-controlled tunable material gallium arsenide to construct circular medium post at the center of photon crystal 1, form point defect resonator cavity 3, THz wave is from the lower end input of wave guide zone 2, and export the upper end of wave guide zone 2; Control light incides on the central point defective resonator cavity 3 along the direction perpendicular to the X-Z plane.
The circle that wave guide zone 2 is replaced by the two row symmetries of having removed tetragonal duplex photonic crystal, the line defect that square silicon medium post constitutes are formed, and two line defects do not communicate, with resonator cavity along line spread.
The THz wave carrier frequency is 4.53THz THz, and control light is provided by the thz laser device or provided by its frequency doubled light.
Provided by the inventionly constitute by tetragonal duplex photonic crystal, wave guide zone, point defect resonator cavity based on the shake terahertz wave modulator in chamber of duplex photon crystal tunable.Wherein tetragonal duplex photonic crystal is the medium column type silicon photonic crystal that distributes along the X-Z planar periodic, by the circular silicon medium post tetragonal photonic crystal of simple structure, nested the forming of square silicon medium post tetragonal photonic crystal.The medium column material is a silicon, and background material is an air.Wave guide zone is positioned at the two ends of photonic crystal, and the circle that is replaced by the two row symmetries of having removed tetragonal duplex photonic crystal, the line defect (but two line defects do not communicate) that square silicon medium post constitutes are formed.By adopting light-controlled tunable material gallium arsenide to construct circular medium post, form the point defect resonator cavity.THz wave is from the lower end input of wave guide zone, and export the upper end of wave guide zone.Control light incides on the defective resonator cavity of central point along the direction perpendicular to the X-Z plane; The THz wave carrier frequency is 4.53THz, and control light can be provided or be provided by its frequency doubled light by the thz laser device.
Concrete parameter is: grating constant a=30 μ m, circular medium column radius r=5 μ m, square medium post side length b=9 μ m, silicon medium post refractive index is 3.4, the refractive index of background material air is that 1 point defect place adopts light-operated gallium arsenide as tunable material, its refractive index real part is 3.55, and the refractive index imaginary part increases with the increase of control light intensity, and its refractive index real part remains unchanged substantially.The control optical source wavelength that this modulator uses is 810nm, when its incident intensity is 0.4 μ J/cm
2The time, gallium arsenide is in the photon excitation attitude, and its refractive index imaginary part is about 2.55, and real part is constant still to be 3.55.
The principle of work of this defect model terahertz wave modulator is as follows: the resonant mode of center tunable cavity plays the frequency-selecting effect to THz wave, and the THz wave that meets resonance frequency can be at point defect place resonance.Therefore, when the control light intensity that is incident on the central point fault location was zero, the refractive index of point defect place gallium arsenide was 3.55, and imaginary part is zero, and corresponding resonant mode frequency is 4.53THz (corresponding wavelength 66.227 μ m), and the THz wave of this frequency can be passed through modulator.When the control light intensity, because the absorption of free carrier in the dilute plasma of gallium arsenide, its refractive index imaginary part takes place to change fast---and the increase with the control light intensity increases, and corresponding resonant mode Q value descends gradually.The control optical source wavelength that this modulator uses is 810nm, when its incident intensity is 0.4 μ J/cm
2The time, gallium arsenide is in the photon excitation attitude, and its refractive index imaginary part is about 2.55.This moment, change took place in resonant mode, and as shown in Figure 2, resonant mode has almost completely disappeared, and THz wave can't starting of oscillation in resonator cavity, and then can't pass through modulator.Therefore the Terahertz wave intensity can change with adding the control intensity variations, has realized the switching modulation to THz wave intensity.
Modulated process is as follows: when a branch of frequency is the TE mould THz wave of 4.53THz during from the linear defect wave-guide district incident of modulator:
(1) when the control light that is applied to the central point fault location was zero, the refractive index real part of point defect place gallium arsenide was n=3.55, imaginary part n '=0, and defective mould frequency is 4.53THz (corresponding wavelength 66.227 μ m).As shown in Figure 3, the THz wave of 4.53THz frequency can be passed through modulator, is in the state of " leading to ", has 95.54% energy to pass through modulator approximately, and the insertion loss is 0.2dB.
(2) when the control light intensity that is applied to the central point fault location be 0.4 μ J/cm
2The time, the gallium arsenide at point defect place is owing to be subjected to the influence of the absorption of free carrier in the dilute plasma, and the refractive index imaginary part is changed into n '=2.55, and resonant mode disappears.As shown in Figure 3, this moment, THz wave can't be at central point defective resonator cavity interior resonance, and modulator is in the state of " breaking ", and 0.004% the THz wave energy of only having an appointment has seen through modulator, and extinction ratio is 42dB.
Claims (3)
1. the duplex photon crystal tunable terahertz wave modulator in chamber that shakes is characterized in that this terahertz wave of photon crystal modulator comprises duplex tetragonal silicon photonic crystal (1), wave guide zone (2), point defect resonator cavity (3); Wherein, duplex tetragonal photonic crystal (1) with nested the forming of square silicon medium post tetragonal photonic crystal, is the medium column type silicon photonic crystal that distributes along the X-Z planar periodic by the circular silicon medium post tetragonal photonic crystal of simple structure; The line defect of introducing symmetry at its two ends constitutes wave guide zone (2), adopt light-controlled tunable material gallium arsenide to construct circular medium post in the center of Two-dimensional Double Tetragonal photonic crystal (1), form point defect resonator cavity (3), THz wave is from the lower end input of wave guide zone (2), and export the upper end of wave guide zone (2); Control light incides on the central point defective resonator cavity (3) along the direction perpendicular to the X-Z plane.
2. the shake terahertz wave modulator in chamber of duplex photon crystal tunable according to claim 1, it is characterized in that described THz wave imports from wave guide zone (2) lower end, the output of wave guide zone (2) upper end, control light is provided or is provided by its frequency doubled light by laser instrument commonly used, and control light incides on the central point defective resonator cavity (3) along the direction perpendicular to the X-Z plane.
3. shake modulator approach of terahertz wave modulator in chamber of duplex photon crystal tunable according to claim 1, it is characterized in that: described modulator is the Q value tunable characteristic that utilizes photonic crystal point defect resonator cavity, the variation of control resonant mode, and then realize the switching of THz wave is modulated; By changing the size of control light, make the refractive index imaginary part of the light-controlled tunable material gallium arsenide of photonic crystal central point fault location take place to change fast because of the absorption of free carrier in the dilute plasma, thereby the resonant mode Q value of point defect resonator cavity is changed, control the starting of oscillation of resonator cavity with this, and then the switching of control propagation THz wave, realize signal loading on THz wave.
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Cited By (12)
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| CN103472532A (en) * | 2013-09-13 | 2013-12-25 | 深圳大学 | Photonic crystal all-optical tunable filter |
| CN103885267A (en) * | 2014-03-26 | 2014-06-25 | 南京邮电大学 | Three-wavelength terahertz wave modulator based on tri-lattice photonic crystals and modulating method |
| CN103984124A (en) * | 2014-05-15 | 2014-08-13 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN104698606A (en) * | 2015-03-11 | 2015-06-10 | 南京邮电大学 | Two-dimensional triangular lattice photonic crystal mode division multiplexing and demultiplexing device based on magneto-optic effect |
| CN104865715A (en) * | 2015-05-12 | 2015-08-26 | 南京邮电大学 | Compound lattice photonic crystal multi-wavelength terahertz wave optical switch |
| CN106028614A (en) * | 2016-07-28 | 2016-10-12 | 苏州大学 | Device for producing continuous tunable defect mode plasma photonic crystals and method thereof |
| CN108761638A (en) * | 2018-08-03 | 2018-11-06 | 中国计量大学 | Multi output port THz wave power divider |
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| CN109669240A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of photonic crystal waveguide sextupole division Mode interference FANO resonant structure |
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| CN103885267A (en) * | 2014-03-26 | 2014-06-25 | 南京邮电大学 | Three-wavelength terahertz wave modulator based on tri-lattice photonic crystals and modulating method |
| CN103984124B (en) * | 2014-05-15 | 2017-01-25 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN103984124A (en) * | 2014-05-15 | 2014-08-13 | 东南大学 | Multi-frequency response TeraHertz wave modulator |
| CN104698606A (en) * | 2015-03-11 | 2015-06-10 | 南京邮电大学 | Two-dimensional triangular lattice photonic crystal mode division multiplexing and demultiplexing device based on magneto-optic effect |
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| CN109669239A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of orthogonal division Mode interference FANO resonant structure of photonic crystal waveguide |
| CN109669241A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of photonic crystal waveguide quadrupole splitting Mode interference FANO resonant structure |
| CN109669240A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of photonic crystal waveguide sextupole division Mode interference FANO resonant structure |
| CN109669242A (en) * | 2019-01-04 | 2019-04-23 | 深圳大学 | A kind of diagonal Mode interference FANO resonant structure of photonic crystal waveguide |
| CN112099247A (en) * | 2020-09-15 | 2020-12-18 | 浙江工贸职业技术学院 | Light-operated dual-wavelength terahertz wave narrow-band filter based on azobenzene-doped liquid crystal material and filtering method thereof |
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