CN1972043A - Photon crystal laser and photon crystal waveguide coupling output method and output apparatus - Google Patents
Photon crystal laser and photon crystal waveguide coupling output method and output apparatus Download PDFInfo
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- CN1972043A CN1972043A CN 200510086955 CN200510086955A CN1972043A CN 1972043 A CN1972043 A CN 1972043A CN 200510086955 CN200510086955 CN 200510086955 CN 200510086955 A CN200510086955 A CN 200510086955A CN 1972043 A CN1972043 A CN 1972043A
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Abstract
This invention discloses one photon integration chip transistor laser device and its couple output method, wherein, the method comprises the following steps: a, orderly putting one 2D semiconductor photon laser and one 2D semiconductor photon transistor wave guide on semi-conductor chip; using pump semiconductor photon transistor laser to generate eradiation laser; the said laser and photon wave guide are coupled to realize the 2D semiconductor photon transistor laser; the deice comprises 2D semiconductor photon laser.
Description
Technical field
The present invention relates to a kind of 2 D photon crystal laser output method and device, particularly relate to a kind of two-dimensional semiconductor photor crystal laser coupling output intent and device that is used in photon integrated chip.
Background technology
Light source and waveguide are critical devices in the integrated optics.It is low that the traditional semiconductor edge-emitting laser and the coupling of fiber waveguide are faced with coupling efficiency for a long time always, the problem of complex process.The research and development of photon crystal material and device is for realizing integrated new approaches and the new method opened up of photon.
Photonic crystal is to arrange the material that forms by different medium by cycle or quasicrystal structure.2 D photon crystal is because relatively easy the manufacturing, and its two-dimensional structure can fully show the characteristic of photonic crystal, receives publicity under study for action.This common class formation has the aperture that digs out periodic arrangement on the light sheet material of high-k, fills the material of low-k in the hole, as air, and obtains pass 2 D photon crystal thin plate.The light wave that satisfies the sheet waveguide condition is modulated by photon crystal structure in the horizontal direction.A key property of photonic crystal is to have forbidden photon band.After in photonic crystal, introducing defective,,, can realize resonant microcavity, and the lead-in defective just can realize photon crystal wave-guide as introducing point defect because the appearance of defective mould just can be controlled photon.
Photonic crystal is the integrated developing direction with very big potentiality of photon, has therefore occurred many optical passive components based on 2 D photon crystal recently, and how light effectively is coupled into photon crystal wave-guide also receives publicity thereupon.As document 1: the light pricker is to the effective input and output coupling of photon crystal wave-guide, Paul E.Barclay, KartikSrinivasan, Matthew Borselli, with Oskar Painter, optics letter, 29 volumes, disclose by optical fiber and photon crystal wave-guide in 697 (2004) and be close, and the method that the optical coupling afferent echo is led.Document 2 for another example: the coupling of small-sized low-loss sextupole mould and photonic crystal sheet waveguide pattern, Guk-Hyun Kim, Yong-Hee Lee, Akihiko Shinya and Masaya Notomi, OPTICS EXPRESS, 12 volumes, 6624 (2004); With 3: one unidirectional photonic crystal light emitting devices of document based on chromatic dispersion, Caihua Chen, Ge Jin, ShouyuanShi, Ahmed Sharkawy and Dennis W.Prather, the Applied Physics wall bulletin, 84 volumes disclose 2 D photon crystal high Q value microcavity and waveguide in 3151 (2004) integratedly, make the mode of resonance in chamber and the method that waveguide mode is coupled.
More than existing the whole bag of tricks one common defective is arranged, promptly all be the evanescent wave that has utilized light source, thereby few with the waveguide mode overlapping region, coupling efficiency is low.In addition, document 2 and 3 used micro-cavity laser power outputs are low, and have than lossy in vertical direction, and this will reduce their practical value.
Summary of the invention
The objective of the invention is to overcome existing light source and 2 D photon crystal waveguide-coupled efficient is low, power output is little shortcoming, provide the coupling output intent and the device of a kind of two-dimensional semiconductor photonic crystal edge-emitting laser and photon crystal wave-guide, to realize the to be directly used in light source of photon integrated chip and the coupling output of waveguide.
In order to achieve the above object, the technical scheme taked of the present invention is as follows:
A kind of photon crystal laser and photon crystal waveguide coupling output method comprise the steps:
1) on semiconductor chip, sets gradually a two dimensions semiconductor photon crystal laser and a two-dimensional semiconductor photon crystal wave-guide;
2) utilize pumping source pumping Semiconductor Photonic Crystal Lasers, produce limit emission laser;
3) described limit emission laser and photon crystal wave-guide coupling realize two dimensions semiconductor photon crystal laser and photon crystal wave-guide coupling output.
In technique scheme, step 2) two dimensions semiconductor photon crystal laser described in is optical pumping, or electricity injects pumping.
In technique scheme, described two dimensions semiconductor photon crystal laser is to realize at air bridges type thin-slab structure, also can realize at low-index material cover type thin-slab structure, or realize at conventional semiconductors cover type thin-slab structure.
In technique scheme, the laser that described two dimensions semiconductor photon crystal laser is sent is side direction output.
In technique scheme, the output laser field of described two-dimensional semiconductor photon crystal wave-guide and two dimensions semiconductor photon crystal laser has overlapping, satisfies the requirement of laser and waveguide-coupled.
In technique scheme, the laser wavelength range that described two dimensions semiconductor photon crystal laser is sent is at 0.4 micron～1.6 microns.
In technique scheme, described semi-conducting material is GaN/AlGaN material, GaAs/AlGaAs material or InP/InGaAsP material.
A kind of photon crystal laser and photon crystal wave-guide coupling follower comprise:
One two dimensions semiconductor photon crystal laser;
One two-dimensional semiconductor photon crystal wave-guide and described two dimensions semiconductor photon crystal laser are successively set on the semiconductor chip, the output laser field of the zone of described two-dimensional semiconductor photon crystal wave-guide and described two dimensions semiconductor photon crystal laser has overlapping, satisfies the requirement of laser and waveguide-coupled.
In technique scheme, described two dimensions semiconductor photon crystal laser is optical pumping, or electricity injects pumping.
In technique scheme, described two dimensions semiconductor photon crystal laser is to realize at air bridges type thin-slab structure, also can realize at low-index material cover type thin-slab structure, or realize at conventional semiconductors cover type thin-slab structure.
In technique scheme, the laser that described two dimensions semiconductor photon crystal laser is sent is side direction output.
In technique scheme, described two dimensions semiconductor photon crystal laser is that a, hole diameter are photon crystal structure A encirclement cycle of d1 to be that a, hole diameter are that the photon crystal structure B of d2 forms by the cycle, described cycle a can be meant the centre distance of adjacent two apertures with reference to figure 1, and hole diameter d1 is less than hole diameter d2; Dig out the aperture of arranging by cycle a on the semiconductor film panel material of described photonic crystal by first dielectric constant, the material that is filled with second dielectric constant in the hole is made; Described first dielectric constant is greater than described second dielectric constant; The material of described second dielectric constant such as air etc.
In technique scheme; The laser wavelength range that described two dimensions semiconductor photon crystal laser is sent is at 0.4 micron～1.6 microns.
In technique scheme, described semi-conducting material is GaN/AlGaN material, GaAs/AlGaAs material or InP/InGaAsP material.
In technique scheme, described two-dimensional semiconductor photon crystal wave-guide is that the cycle that forms on described semiconductor chip is a, hole diameter is the line defect type photon crystal wave-guide of d3, and this hole diameter d3 makes excitation mode drop in the guided wave mould and avoids the band edge of guided wave mould.
Further, in technique scheme, the hole diameter d3 of described waveguide equates with the hole diameter d1 of described photon crystal structure A.
Laser output of the present invention is to dock with the 2 D photon crystal waveguide by microcavity, and the guided wave mode of excitation mode and waveguide has very big coupling zone, in the direct coupled into waveguide of excitation mode.The structure of 2 D photon crystal waveguide should make excitation mode drop in the guided wave mould, and avoids the band edge of guided wave mould.
Compared with prior art, superiority of the present invention is:
1) coupling efficiency height: the guided wave mode of the excitation mode of microcavity and waveguide has very big light field overlapping region among the present invention, so the direct coupled into waveguide of excitation mode, makes coupled structure that very high coupling efficiency be arranged;
2) loss is low: the present invention uses edge-emitting laser and waveguide-coupled, and power output is big, and is low in the vertical direction loss.
Description of drawings
Fig. 1 represents the structural representation of the 2 D photon crystal edge-emitting laser microcavity among the present invention;
Fig. 2 represents the schematic diagram of 2 D photon crystal edge-emitting laser microcavity of the present invention and 2 D photon crystal waveguide-coupled;
The signal of the coupling output laser that Fig. 3 represents to be obtained by the embodiment of the invention 1;
The signal of the coupling output laser that Fig. 4 represents to be obtained by the embodiment of the invention 2.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
With reference to accompanying drawing 1, two dimensions semiconductor photon crystal laser among numeral 10 expression the present invention, this photon crystal laser 10 is to have gain spectral from 0.4 micron～1.6 microns semiconductor active material 11, dig out by the cycle be a, hole diameter is that the photon crystal structure A encirclement cycle of d1 is a, hole diameter is that the photon crystal structure B of d2 forms, wherein numeral 12 expression diameters are the aperture of d1 among Fig. 1, numeral 13 expression diameters are the aperture of d2, dotted line 14 area surrounded are just represented above-mentioned photon crystal structure B, and the zone beyond the dotted line 14 is exactly above-mentioned photon crystal structure A.In general, the thickness of photon crystal structure A is not less than 7 cycle a, and the length of photon crystal structure B and widely all be not less than 13 cycle a forms a microcavity like this, and structure A is the reflector of microcavity.Article one forbidden band of structure A transverse electric (TE) mould is lower than article one forbidden band of structure B transverse electric (TE) mould, but there is the intersection in two forbidden bands.There are two modes of resonance in the microcavity.Wherein the frequency of pattern 1 is at the bottom of the forbidden band of structure A and between at the bottom of the forbidden band of structure B, and the field distribution of this pattern is positioned at the microcavity edge, and the horizontal direction leakage losses is bigger, and can suppress by changing micro-cavity structure.Near the frequency of pattern 2 was positioned at the bottom of the band in forbidden band of structure B, its field distribution concentrated on the microcavity center, and concentration of energy is in dielectric substance, and pattern loss in the horizontal direction is very little, and can obtain very high gain when pumping.Because near being positioned at the bottom of the forbidden band, pattern 2 also can be limited effectively in the loss perpendicular to the thin plate direction.Pattern 2 finally can become excitation mode by mode competition, in the horizontal direction output.
With reference to accompanying drawing 2, Fig. 2 has represented that it comprises that with chain-dotted line in scheming 30 be marginal photon crystal laser 10 and photon crystal wave-guide 20 according to two dimensions semiconductor photon crystal laser of the present invention and photon crystal wave-guide coupling follower.The structure of 2 D photon crystal waveguide 20 is: the cycle is a, the line defect type photonic crystal of hole diameter d1, and the length of line defect depends on the distance that the user need draw laser.The laser of coupling output will send from opening 15.
Embodiment 1
Export according to 1.55 microns the laser coupled that Fig. 2 realizes on the InP semi-conducting material.The each several part parameters selection is as follows:
Material: InGaAsP quaternary semiconductor quantum-well materials, gain are pounced on 1.55 microns of spectrum centre wavelengths, effective refractive index 3.36.
The cycle a of two dimensions semiconductor photon crystal laser 10: structure B is 380 nanometers, and hole diameter d2 is 273.6 nanometers, is of a size of horizontal 13 apertures, vertical 13 apertures; The cycle a of structure A is 380 nanometers, and hole diameter d1 is 266 nanometers, and the thickness of investing mechanism B is 7 cycles.
2 D photon crystal waveguide 20: remove row's aperture and form the waveguide of line defect type 2 D photon crystal in complete two-dimensional photon crystal structure, structural cycle a is 380 nanometers, and this hole diameter is 266 nanometers.With reference to figure 2,30 to begin to the line defect length at right side boundary place be 18 cycles, i.e. 6840 nanometers from the line of demarcation; Width is 1 cycle, promptly the defective both sides over against aperture centre-to-centre spacing be 760 nanometers.
Press in the laser coupled output of above-mentioned parameter configuration, pattern 1 is effectively suppressed, and the output wavelength that simulation obtains pattern 2 is 1.55 microns, sees wavelength-power profile shown in Figure 3.
Embodiment 2:
0.86 micron the laser coupled output that on the GaAs semi-conducting material, realizes according to Fig. 2 equally.Each several part is selected for use as follows:
Material: AlGaAs ternary system Spectrum of Semiconductor Quantum Wells, gain are pounced on 0.86 micron of spectrum centre wavelength, effective refractive index 3.46.
The cycle a of two dimensions semiconductor photon crystal laser 10: structure B is 202 nanometers, and hole diameter d2 is 142 nanometers, is of a size of horizontal 13 apertures, vertical 13 apertures; The cycle a of structure A is 202 nanometers, and hole diameter d1 is 137 nanometers, and the thickness of investing mechanism B is 7 cycles
2 D photon crystal waveguide 20: remove row's aperture and form the waveguide of line defect type 2 D photon crystal in complete two-dimensional photon crystal structure, structural cycle a is 202 nanometers, and hole diameter is 137 nanometers.With reference to figure 2,30 to begin to the line defect length at right side boundary place be 18 cycles, i.e. 3636 nanometers from the line of demarcation; Width is 1 cycle, promptly the defective both sides over against aperture centre-to-centre spacing be 404 nanometers.
Press in the laser coupled output of above-mentioned parameter configuration, pattern 1 is effectively suppressed, and the output wavelength that simulation obtains pattern 2 is 0.86 micron, sees wavelength-power profile shown in Figure 4.
In general, there is no particular restriction for the direction of photon crystal wave-guide 20, can be in the line of demarcation 30 places vertical or angled with the border of photon crystal structure B, and the photon crystal wave-guide 20 of line defect type can be linear pattern, broken line type or shaped form.The zone that photon crystal wave-guide 20 contacts with photon crystal structure B can also can be a position near border one side in the centre on the border of photon crystal structure B.It is adequate that these different implementations are implemented according to the present invention for those skilled in the art.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiments, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, and not breaking away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1, a kind of photon crystal laser and photon crystal waveguide coupling output method comprise the steps:
1) on semiconductor chip, sets gradually a two dimensions semiconductor photon crystal laser and a two-dimensional semiconductor photon crystal wave-guide;
2) utilize pumping source pumping Semiconductor Photonic Crystal Lasers, produce limit emission laser;
3) described limit emission laser and photon crystal wave-guide coupling realize two dimensions semiconductor photon crystal laser and photon crystal wave-guide coupling output.
2, according to described photon crystal laser of claim 1 and photon crystal waveguide coupling output method, it is characterized in that, step 2) two dimensions semiconductor photon crystal laser described in is optical pumping, or electricity injects pumping: the laser that described two dimensions semiconductor photon crystal laser is sent is side direction output.
3, according to claim 1 or 2 described photon crystal laser and photon crystal waveguide coupling output methods, it is characterized in that, two dimensions semiconductor photon crystal laser described in the step 1) is to realize at air bridges type thin-slab structure, or realize, or realize at conventional semiconductors cover type thin-slab structure at low-index material cover type thin-slab structure.
According to described photon crystal laser of claim 1 and photon crystal waveguide coupling output method, it is characterized in that 4, the laser wavelength range that described two dimensions semiconductor photon crystal laser is sent is at 0.4 micron～1.6 microns.
According to described photon crystal laser of claim 1 and photon crystal waveguide coupling output method, it is characterized in that 5, the material of described semiconductor chip is GaN/AlGaN material, GaAs/AlGaAs material or InP/InGaAsP material.
6, a kind of photon crystal laser and photon crystal wave-guide coupling follower comprises:
One two dimensions semiconductor photon crystal laser;
One two-dimensional semiconductor photon crystal wave-guide and described two dimensions semiconductor photon crystal laser are successively set on the semiconductor chip, the output laser field of the zone of described two-dimensional semiconductor photon crystal wave-guide and described two dimensions semiconductor photon crystal laser has overlapping, satisfies the requirement of laser and waveguide-coupled.
7, according to described photon crystal laser of claim 6 and photon crystal wave-guide coupling follower, it is characterized in that described two dimensions semiconductor photon crystal laser is optical pumping, or electricity injects pumping; The laser that described two dimensions semiconductor photon crystal laser is sent is side direction output; Described two dimensions semiconductor photon crystal laser is to realize at air bridges type thin-slab structure, or realizes at low-index material cover type thin-slab structure, or realizes at conventional semiconductors cover type thin-slab structure.
8, according to claim 6 or 7 described photon crystal lasers and photon crystal wave-guide coupling follower, it is characterized in that, described two dimensions semiconductor photon crystal laser is surrounded second photon crystal structure by first photon crystal structure and is formed, the cycle of described first and second photon crystal structures is identical, the aperture of first photon crystal structure has first diameter, the aperture of second photon crystal structure has second diameter, and described first diameter is less than described second diameter; Dig out the aperture by described periodic arrangement on the light sheet material of described photonic crystal by first dielectric constant, the material that is filled with second dielectric constant in the hole is made; Described first dielectric constant is greater than described second dielectric constant.
9, according to described photon crystal laser of claim 1 and photon crystal wave-guide coupling follower, it is characterized in that the material of described semiconductor chip is GaN/AlGaN material, GaAs/AlGaAs material or InP/InGaAsP material; Described two-dimensional semiconductor photon crystal wave-guide is that the cycle is identical with the cycle of described first and second photon crystal structures, and its aperture has the line defect type photon crystal wave-guide of the 3rd diameter, and the 3rd diameter makes excitation mode drop in the guided wave mould and avoids the band edge of guided wave mould.
10, according to described photon crystal laser of claim 9 and photon crystal wave-guide coupling follower, it is characterized in that, aperture the 3rd diameter of described waveguide and aperture first equal diameters of described first photon crystal structure make the coupling of waveguide mode and zlasing mode.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100510813C (en) * | 2007-12-03 | 2009-07-08 | 中国科学院光电技术研究所 | Design method of composite two-dimensional photonic crystal with high coupling efficiency |
| CN101867148B (en) * | 2009-04-15 | 2012-05-23 | 中国科学院半导体研究所 | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface |
| CN101887144B (en) * | 2009-05-13 | 2012-07-04 | 中国科学院半导体研究所 | Slow light effect photonic crystal waveguide structure for eliminating group velocity dispersion |
| CN102664349A (en) * | 2012-05-02 | 2012-09-12 | 中国科学院半导体研究所 | Plasma coupled mode laser |
| CN104466674A (en) * | 2014-12-03 | 2015-03-25 | 中国科学院长春光学精密机械与物理研究所 | On-chip integration beam combination laser device based on photonic crystal Y waveguide and manufacturing method of laser device |
-
2005
- 2005-11-23 CN CN 200510086955 patent/CN1972043A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100510813C (en) * | 2007-12-03 | 2009-07-08 | 中国科学院光电技术研究所 | Design method of composite two-dimensional photonic crystal with high coupling efficiency |
| CN101867148B (en) * | 2009-04-15 | 2012-05-23 | 中国科学院半导体研究所 | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface |
| CN101887144B (en) * | 2009-05-13 | 2012-07-04 | 中国科学院半导体研究所 | Slow light effect photonic crystal waveguide structure for eliminating group velocity dispersion |
| CN102664349A (en) * | 2012-05-02 | 2012-09-12 | 中国科学院半导体研究所 | Plasma coupled mode laser |
| CN104466674A (en) * | 2014-12-03 | 2015-03-25 | 中国科学院长春光学精密机械与物理研究所 | On-chip integration beam combination laser device based on photonic crystal Y waveguide and manufacturing method of laser device |
| CN104466674B (en) * | 2014-12-03 | 2017-07-14 | 中国科学院长春光学精密机械与物理研究所 | Integrated conjunction beam laser and preparation method thereof on piece based on photonic crystal Y waveguide |
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