CN1318202A - 磁性沟道结器件的制造方法 - Google Patents

磁性沟道结器件的制造方法 Download PDF

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CN1318202A
CN1318202A CN00801461A CN00801461A CN1318202A CN 1318202 A CN1318202 A CN 1318202A CN 00801461 A CN00801461 A CN 00801461A CN 00801461 A CN00801461 A CN 00801461A CN 1318202 A CN1318202 A CN 1318202A
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J·B·A·D·范宗
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Abstract

一种磁性沟道结器件的制造方法，其中形成叠层(1)，包括两个电极层(3,7)，和在其间延伸的阻挡层(5)。通过腐蚀构成电极层之一，其中在腐蚀过程中，通过去除材料直到留下剩余层(7r)，以使该层部分减薄。随后通过物理腐蚀去除该剩余层，其中至少带电颗粒具有动能基本位于剩余层的磁性材料的溅射阈值和阻挡层的非磁性材料的溅射阈值之间。在相关方法中，防止不准备构成的电极层在另一电极层的构成过程中被有害地影响。

Description

磁性沟道结器件的制造方法
本发明涉及磁性沟道结器件的制造方法，其中形成叠层，包括两个磁性材料的电极层，和在其间延伸的非磁性材料的阻挡层。
本发明还涉及通过这种方法获得的磁性沟道结器件，配置有这种器件的磁场传感器和配置有这种器件的磁性存储器。
上述器件公开于WO-A99/22368。由所述专利申请公知的磁性沟道结器件包括第一和第二磁性层，并且用做电极层，这些层中间夹着绝缘中间层。作为传感元件，这种器件形成配置有磁轭的磁场传感器部分，其中第一磁性层与磁轭部分直接接触。与磁轭同样地，第一磁性层由软磁材料形成。第二磁性层是复合层，包括铁磁子层和钉扎层。绝缘中间层构成沟道阻挡层。
在公知的磁性沟道结器件中，磁性层之一、即软磁层也用做磁通导向。为了防止对该层磁性能的有害影响，例如由于面对沟道阻挡层的软磁层表面的不规则而导致的畴壁形成，要求仅构成另一磁性层即第二磁性层，也可能是阻挡形成中间层。
本发明的目的在于提供一种在开始段所述类型的方法，包括构成电极层之一的工艺，该工艺在达到另一电极层之前必然终止。
为了实现上述目的，根据本发明的方法的特征在于，通过腐蚀构成电极层之一，其中在腐蚀过程中，通过去除材料直到留下剩余层，以使相关层部分减薄，之后通过物理腐蚀去除该剩余层，其中至少颗粒具有的动能基本位于剩余层的磁性材料溅射阈值和阻挡层的非磁性材料的溅射阈值之间。物理腐蚀应理解为是指通过带电颗粒束的腐蚀，例如溅射腐蚀，离子铣和离子束腐蚀。假设已知，溅射阈值是从进行腐蚀处理的层的材料中释放颗粒所必需的最小能量。
在根据本发明的方法中，可以确定不达到另一电极层，因为在腐蚀处理的第一阶段中，被构成的电极层不被完全腐蚀，在腐蚀处理中使用待构成的电极层掩模的公知方式，该电极层是或者可以包括软磁层。在第一阶段的腐蚀可以是化学或物理腐蚀。例如通过测量电阻，可以确定到达剩余层的时间。最好剩余层最大具有指定的5mm的厚度。在腐蚀处理的第二阶段中，通过物理腐蚀去除剩余层，而不侵蚀另一电极层。在物理腐蚀过程中使用的颗粒具有的动能低于阻挡层的溅射阈值，因此不能通过阻挡层，这样可以获得意外的效果。使用的物理腐蚀处理是选择性腐蚀工艺。上述方法的工序对未构成的电极层不产生任何有害影响，特别是对该电极层的磁性能没有有害影响。如果后者提到的层由或者也由软磁材料形成，则该层特别适合于用做磁通导向层。
根据本发明的方法的实施例，其特征在于使用的颗粒质量大于剩余层的磁性材料的金属元素的质量。在这种情况，假设阻挡层的非磁性材料、通常是氧化物或氮化物的元素，比上述金属元素轻。上述措施确实有助于方法的选择性，其中，由于带电颗粒具有较重质量，磁性材料的腐蚀选择性大于非磁性材料。
根据本发明的方法的实施例，其特征在于，待构成的电极层由基本层和一层结构连续地构成，该层结构包括至少用于基本层的磁性钉扎的另一层。基本层可以例如是NiFe合金或Co合金的铁磁层，特别是Co-Fe合金，而钉扎层结构可以包括以下可能性之一：例如FeMn合金或IrMn合金的反铁磁层；例如Co合金的硬磁铁磁层；包括被金属中间层分隔的两个反平行磁性层的人造反铁磁结构。这种结构可以与例如FeMn合金的反铁磁层耦合。如果形成这种待构成的电极层，最好选择地腐蚀层结构，特别是初始选择地化学腐蚀这种结构，即在构成基本层之前，直至达到基本层。通过部分地使用所述选择腐蚀，可以在较短时间周期中进行根据本发明的方法的构成工艺。选择性化学腐蚀是一种公知的腐蚀技术。
注意根据本发明的方法是指磁性沟道结器件的半成品的磁性电极层的构成方法，其中该半成品包括所述电极层、阻挡层和另一磁性电极层的组件。在上述方法中，相关层的构成不影响磁性沟道结器件的另一磁性电极层的磁性能，至少没有到有害的程度。该方法的特殊之处在于腐蚀不通过阻挡层。从而保证无论层厚度如何变化以及腐蚀方法如何变化，都不会腐蚀并不准备构成的磁性电极层。作为绝缘层的阻挡层是一种低电导的层，或者是介电层，通常厚度仅约是1nm。
根据本发明的磁性沟道结器件，通过根据本发明的方法制造，具有由上述方法构成的磁性电极层，和可以是或可以包括软磁层的另一磁性电极层，该层可以用做磁通导向。这种软磁层可以由例如NiFe合金或Co合金例如Co-Fe合金形成。该软磁层也可以由多个子层构成。
根据本发明的磁场传感器配置有根据本发明的磁性沟道结器件。磁性沟道结器件形成一个根据本发明的磁场传感器或磁场传感器的传感元件。这种传感器尤其可以用做磁头，解译出产生于磁性信息介质例如磁带或磁盘的磁通；用做探测地球磁场的罗盘中的传感器；用做检测例如位置、角度、或速度的传感器，例如在汽车使用中的；用做医用扫描仪的磁场传感器；以及用做电流检测器。而且，根据本发明的磁性存储器、特别是MRAM配置有根据本发明的磁性沟道结器件。
关于权利要求书，注意从属权利要求所述实施例可以作出各种结合。
以下将参考实施例说明本发明的这些和其它方面。
图1A是通过根据本发明的方法的实施例获得的第一中间产品的示意图。
图1B是通过根据本发明的方法的所述实施例获得的第二中间产品的示意图。
图1C是通过根据本发明的方法的实施例获得的第三中间产品的示意图。
图1D是通过根据本发明的方法的实施例获得的第四中间产品的示意图。
图1E是根据本发明的磁性沟道结器件的实施例示意图，该磁性沟道结器件是根据本发明的方法的所述实施例制造的。
图2是根据本发明的磁场传感器的实施例。
图1展示了多层的叠层1，在此例子中包括，例如NiFe合金的软磁材料的第一磁性电极层3；例如Al2O3的绝缘、导电性差或者介电层5，在本文也称为阻挡层；第二磁性电极层7，在本例子中由软磁材料的基本层7a和层结构7b组成，该软磁材料在本例中例如是NiFe合金，该层结构至少包括例如FeMn合金的反铁磁材料的另一层。另外，对于包括基本层7a和层结构7b的层结构，硬磁层可以用做第二磁性层。
在根据本发明的方法中，在所示叠层1上设置例如是光刻胶的遮蔽层9，可见图1B。随后，采用腐蚀工艺，其中首先选择地腐蚀层结构7b，特别是化学腐蚀，直至达到基本层7a，可见图1C。之后，腐蚀基本层7a，特别是物理腐蚀，直至留下软磁材料的剩余层7r，可见图1D。另外，可以仅使用物理腐蚀，也足以代替两次腐蚀工艺。如果第二电极层7是硬磁层，则最好使用例如溅射腐蚀的物理腐蚀。在物理腐蚀过程中，连续或者可能在腐蚀工艺的短暂中断中偶然地测量电阻，以便确定达到所要求的剩余层7r的时间。
在上述方法之一中获得的剩余层7r的最大厚度最好是5nm。在根据本发明的方法中，通过物理腐蚀去除剩余层7r，在本例中是溅射腐蚀，其中带电颗粒特别是离子具有位于使用的NiFe合金的溅射阈值与Al2O3的溅射阈值之间动能。NiFe合金的溅射阈值大约是20eV；Al2O3的溅射阈值大约是40eV。在此实施例中，最好用Kr或Xe离子轰击剩余层7r，这些离子具有的质量大于金属Ni和Fe的质量，而后者的质量大于Al和O的质量。去除剩余层7r之后，通过定积绝缘材料例如SiO2或Al2O3，形成保护层11。也去除遮蔽层9。
根据本发明的磁场传感器如图2所示，包括图1E所示类型的磁性沟道结器件20。在此实施例中，传感器还包括具有间断22a的磁轭22，与磁性沟道结器件20磁性地桥接。磁轭22由软磁材料形成，例如NiFe合金。传感器具有与非磁性传感间隙26邻接的传感面24。由绝缘层例如SiO2或Al2O3形成间断22a和，间隙26。
注意本发明并不限于所示实施例。例如，在本发明的范围内方法的几个工序可以有变化。而且，所示传感器可以形成作为扫描磁记录介质的磁头。这种结构可以形成组合读/写磁头的一部分。根据本发明的方法获得的磁性沟道结器件也可以形成磁性存储器的一部分。

Claims (9)

1．一种磁性沟道结器件的制造方法，其中形成叠层，包括两个磁性材料的电极层，和在其间延伸的非磁性材料的阻挡层，其特征在于，通过腐蚀构成电极层之一，其中在腐蚀过程中，通过去除材料直到留下剩余层，以使相关层部分减薄，之后通过物理腐蚀去除该剩余层，其中至少颗粒具有的动能基本位于剩余层的磁性材料的溅射阈值和阻挡层的非磁性材料的溅射阈值之间。
2．根据权利要求1的方法，其特征在于，使用的颗粒的质量大于剩余层的磁性材料的金属元素的质量。
3．根据权利要求1的方法，其特征在于，待构成的电极层由基本层和一层结构连续地构成，该层结构至少包括用于基本层的磁性钉扎的另一层。
4．根据权利要求3的方法，其特征在于，在构成基本层之前，化学腐蚀该层结构，直至达到基本层。
5．一种磁性沟道结器件，是通过上述权利要求中任一项方法所获得的。
6．根据权利要求5的磁性沟道结器件，其中，除构成的电极层之外的层包括能够用做磁通导向的软磁层。
7．一种磁场传感器，配置有权利要求5的磁性沟道结器件。
8．一种磁场传感器，配置有权利要求6的磁性沟道结器件，并且配置有磁轭，与磁性沟道结器件的软磁层磁性接触。
9．一种磁性存储器，配置有权利要求5的磁性沟道结器件。
CNB008014612A 1999-07-22 2000-07-17 磁性沟道结器件的制造方法 Expired - Fee Related CN1214414C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100362591C (zh) * 2002-03-29 2008-01-16 株式会社东芝 磁存储装置的制造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010075246A (ko) * 1999-07-22 2001-08-09 요트.게.아. 롤페즈 자기 터널 접합소자의 제조방법
JP2003078185A (ja) * 2001-09-03 2003-03-14 Nec Corp 強磁性トンネル接合構造及びその製造方法並びに該強磁性トンネル接合を用いた磁気メモリ
US6548849B1 (en) * 2002-01-31 2003-04-15 Sharp Laboratories Of America, Inc. Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
EP2410589B1 (de) * 2010-07-23 2013-10-09 Grützediek, Ursula Verfahren zur Herstellung eines TMR-Bauelements
US9000760B2 (en) * 2012-02-27 2015-04-07 Everspin Technologies, Inc. Apparatus and method for resetting a Z-axis sensor flux guide

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5492605A (en) * 1992-08-24 1996-02-20 International Business Machines Corporation Ion beam induced sputtered multilayered magnetic structures
EP0672303B1 (en) * 1993-10-06 1997-12-03 Koninklijke Philips Electronics N.V. Magneto-resistance device, and magnetic head employing such a device
JPH0832141A (ja) * 1994-07-11 1996-02-02 Nec Corp 人工格子薄膜磁気センサ
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
JP3459869B2 (ja) * 1997-08-04 2003-10-27 日本電気株式会社 強磁性トンネル接合素子の製造方法
US5949623A (en) * 1997-09-11 1999-09-07 International Business Machines Corporation Monolayer longitudinal bias and sensor trackwidth definition for overlaid anisotropic and giant magnetoresistive heads
US5901018A (en) * 1997-10-24 1999-05-04 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide
DE69825031T2 (de) 1997-10-29 2005-07-21 Koninklijke Philips Electronics N.V. Magnetfeldsensor mit spin tunnelübergang
US5930087A (en) * 1997-11-20 1999-07-27 Hewlett-Packard Company Robust recording head for near-contact operation
US6795280B1 (en) * 1998-11-18 2004-09-21 Seagate Technology Llc Tunneling magneto-resistive read head with two-piece free layer
US6430010B1 (en) * 1999-05-03 2002-08-06 Seagate Technology, Llc. Disc drive reader with reduced off-track pickup
KR20010075246A (ko) * 1999-07-22 2001-08-09 요트.게.아. 롤페즈 자기 터널 접합소자의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100362591C (zh) * 2002-03-29 2008-01-16 株式会社东芝 磁存储装置的制造方法

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