CN1317141A - 磁致电阻元件及其在存储单元装置中作为存储元件的应用 - Google Patents
磁致电阻元件及其在存储单元装置中作为存储元件的应用 Download PDFInfo
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Abstract
在磁致电阻元件内，在第1铁磁层元件(1)和第2铁磁层元件(2)之间安排了非磁性层元件(3)。非磁性层元(3)由一种材料组成，它在制造磁致电阻元件时必需的温度范围内具有扩散壁垒作用，而本身不会向相邻的铁磁层元内扩散。磁致电阻元件既适用作传感器元件也适用作存储单元装置的存储元件。
Description
磁致电阻元件，也称为磁电阻元件，日益增长地作为传感器元件或作为存储单元装置所谓MRAM的存储元件，应用(参阅S.Mengel著，Technologieanalyse Magnetismus(技术分析磁学)卷2，XMR-Technologien(XMR技术)，出版社VDI TechnologiezentrumPhysikalische Technologien,97年8月)。在学术界对磁致电阻元件了解为一种结构，它具有至少两层铁磁层和其间安排的一层非磁性层。这时各按层结构的建立区分为GMR元件、TMR元件和CMR元件。
在学术界GMR元件的概念用于具有至少两层铁磁层和其间安排一层非磁性的，导电层并显示所谓的GMR(巨大磁致电阻)效应的层结构。所谓GMR效应可理解为GMR元件的电阻与以下事实有关，即是否在两铁磁层内的磁化平行或逆平行取向。GMR效应比所谓AMR(各向异性磁致电阻)效应大。AMR效应可理解为磁化导线内的电阻在平行和垂直于磁化方向是不同的。在AMR效应涉及在铁磁单层内出现的体效应。
TMR元件的慨念在学术界用于隧道磁致电阻层结构，该结构具有至少两层铁磁层和一层安排其间的、绝缘非磁性层。这时绝缘层是如此薄，以致它导致在两铁磁层之间的隧道电流。这些层结构同样显示磁致电阻效应，该效应是由通过安排在两铁磁层之间的绝缘非磁性层的自旋极化隧道电流引起的。在这种情况下TMR元件的电阻也与以下事实有关，即是否在两铁磁层内的磁化平行或逆平行取向。这时相对电阻变化约为6～30％。
另一磁致电阻效应，由于其大小(室温时相对电阻变化为100～400％)称为特大(Collosal)磁致电阻效应(CMR效应)，由于其高的矫顽力为了在磁化状态之间转变必需高磁场。
已提出建议：(参阅例如S.Tehrani等，IEDM 96-193和D.D.Tang等，IEDM 95-997)GMR元件用作存储单元装置内的存储元件。存储元件经读出线串联。与其垂直的是字线，该字线无论对读出线或对存储元件都绝缘。加在字线上的信号通过在字线内流过的电流产生磁场，该磁场在足够强度时影响处于其下的存储元件。X/Y线用于写入信息，这些线在将说明的存储单元之上彼此正交。对它们加信号，该信号在交叉点上引起足够改变磁化的磁场。这时磁化方向在两铁磁层之一内转换。相反在两铁磁层的另一层内磁化方向保持不变。在最后所述的铁磁层内保持磁化方向是通过相邻的反铁磁层实现的，该反铁磁层保持磁化方向，或通过以下方式，即：通过其它材料或其它尺寸例如与在先提到的铁磁层相比的层厚来增大该铁磁层的开关阈值。
在US 5 541 868内提出以GMR效应为基础的环形存储元件。存储元件包含一叠层，它具有至少两层环形铁磁层元件和安排其中的一层非磁性导电层元件。这些铁磁层元件的材料成分不同。铁磁层元件之一是硬磁性的，而另一是较软磁性的。为了写入信息在较软磁性层元件内的磁化方向应转换，而在较硬磁性层元件内的磁化方向保持不变。
考虑到磁致电阻元件的大量技术上的应用，例如作为集成磁致电阻存储单元装置(所谓MRAM)或作为集成传感器装置，集成磁致电阻元件在半导体工艺技术内是必需的。在半导体工艺技术内，尤其在晶片面上在所谓的后端工艺也称为BEOL生产线的后端工艺(Back endof line)中制造半导体器件时，出现温度至少约450℃(参阅例如D.Widmann等，Technologie integrierter Schaltungen集成电路工艺，Springer出版社1996,58页)，使磁致电阻元件也经受此温度。在该温度范围，基于在磁致电阻层系包含的元素，尤其是Fe、Co、Ni、Cu等的扩散迁移率应估算扩散，该扩散这样改变铁磁层元件特性，使得具有由不同材料成分组成的铁磁层元件的磁致电阻元件不再起作用。基于令人担心的扩散导致界面区内材料组成的变化，它妨碍与自旋有关的电子输运，在这些元件中的磁致电阻效应是建立在此种电子输运基础上的。因此必须估计到：以越过这界面1～5nm范围的有效距离的、扩散制约的、少量材料迁移已经导致电和磁特性的显著变化。几纳米的扩散长度已经可能引起完全改变的界面特性，这种改变的界面特性导致磁致电阻元件的特性漂移，甚至整个失效。(参阅I.Kaur,W.Gust,“Fundamentals of Grain an Interphase BoundaryDiffusion,”Ziegler出版社，斯图加特(1989),16～26,287,316～318页和I.Kaur,W.Gust,L.Kozma,Handbook of Grain andInterphase Boundary Data，卷1和2,Ziegler出版社，斯图加特(1989),8～13,220～224,403,515,528,530,776,952～953,966～998页)。
在半导体工艺技术内集成磁致电阻元件问题及其可能出现的困难在文献内迄今尚未研究讨论。
作为本发明基础的问题是提供可在半导体工艺技术框架内制造的磁致电阻元件。
根据本发明，该问题通过根据权利要求1所述的磁致电阻元件解决。本发明的进一步扩展参照从属权利要求。
磁致电阻元件具有第1铁磁层元件，非磁性层元件和第2铁磁性层元件，其中在第1铁磁性层元件和第2铁磁性层元件之间安排了非磁性层元件。非磁性层元件在制造磁致电阻元件必需的温度范围具有扩散壁叠作用。在制造时该磁致电阻元件经受这温度区的温度。
在本发明的磁致电阻元件中，基于在过程中出现的温度负荷通过以下方式避免铁磁层元件特性的改变，即非磁性层元件由具有扩散壁垒作用的材料构成，并且本身不扩散入相邻的铁磁层元件中去。
非磁性层元件优先由在温度范围20～450℃内具有扩散壁垒作用的材料构成。因此保证在硅工艺技术中在制造包含磁致电阻元件的装置内出现的温度负荷情况下，尤其在金属化系统的处理过程可达到450℃，在第1铁磁层元件、第2铁磁层元件和非磁性层元件之间没有引起扩散。
非磁性层元件至少包含具有或不具有添加物N、Si或B的Ti、Ta、W、Nb、Mo元素之一。
非磁性层元件的厚度主要处于2～4nm之间。
第1铁磁层元件和第2铁磁层元件各主要至少包含Fe、Ni、Co、Gd、Dy元素之一。第1和第2铁磁层元件的厚度主要处于2～20nm之间。铁磁层元件的截面任意地与层面平行，它可以尤其是圆形、椭圆形、角形或环形。
第1铁磁层元件和第2铁磁层元件在其材料组成或/和其尺寸方面彼此不同。
磁致电阻元件或适宜作传感器元件或适宜作存储单元装置的存储单元。
本发明的实施例依靠附图详细说明如下。图内的图形是并不按比例的。
图1示出通过磁致电阻元件的剖面。
图2示出存储单元装置的俯视图。
磁致电阻元件具有由Fe、Ni、Co、Gd、Dy或其合金构成的第1铁磁层元件1和具有包含或不包含添加物N,Si或B的Ti、Ta、W、Nb、Mo构成的非磁性层元件3和由Fe、Ni、Co、Gd、Ry或其合金构成的第2铁磁层元件2。第1铁磁层元件1具有主要呈直角截面，其尺寸约为100nm×150nm而厚度约为20nm。第2铁电层元件具有主要呈直角截面，其尺寸为100nm×150nm，而厚度约为5nm。非磁性层元件3也主要呈直角截面，其尺寸为100nm×150nm，而其厚度约为2～4nm。在该磁致电阻元件内通过由具有或不具有添加物N,Si或B的Ti、Ta、W、Nb、Mo构成的非磁性层元件3，一直到温度450℃有效地阻止扩散。
为了建立存储单元装置，具有磁致电阻元件作为其存储元件S，正如依靠图1描述所建立的那样，存储元件S按照网格式排列。这时每一存储元件S连接在第1导线L1和第2导线L2之间。第1导线L1彼此平行并对也彼此平行的第2导线L2正交(参阅图2)。为了写入存储元件S，分别经从属的第1导线L1和从属的导线L2流过这样一种电流，使得在其上安排了存储元件的第1导线L1和第2导线L2的交叉点上形成足够的磁场，以便转换第2铁磁层元件的磁化方向。这时在有关交叉点上的有效磁场是由通过在第1导线L1内的电流感应的磁场和通过在第2导线L2内的电流感应的磁场的叠加。
在存储单元装置内给磁致电阻元件的电阻值分配第1逻辑值，该电阻值相当于在第1铁磁层元件内的磁化方向取向平行于在第2铁磁层元件内的磁化方向取向，而第2逻辑值分配给相当于在第1铁磁层元件内磁化取向逆平行于第2铁磁层元件内磁化方向取向时的电阻值。
Claims (6)
1．磁致电阻元件，
-具有第1铁磁层元件(1)，非磁性层元件(3)和第2铁磁层元件(2)，
-其中，非磁性层元件(3)安排在第1铁磁层元件(1)和第2铁磁层元件(2)之间，
-其中，非磁性层元件(3)包含一种材料，它在制造磁致电阻元件时必须的温度范围内具有扩散壁垒作用，而本身不扩散入铁磁层元件(1,2)内。
2．根据权利要求1所述的磁致电阻元件，
其中，非磁性层元件(3)的材料在温度范围20～450℃之间有扩散壁垒作用。
3．根据权利要求1或2所述的磁致电阻元件，
其中，第1铁磁层元件(1)和第2铁磁层元件(2)其材料组成不同。
4．根据权利要求1到3之一所述的磁致电阻元件，
其中，非磁性层元件(3)至少包含元素Ti、Ta、W、Mo之一，这些元素的氮化物，这些元素的硅化物，这些元素的硼化物或至少由两种这些元素构成的合金。
5．根据权利要求1到4之一所述的磁致电阻元件，
其中，第1铁磁层元件(1)和第2铁磁层元件(2)各自至少包含元素Fe、Ni、Co、Gd、Dy之一。
6．根据权利要求1到5之一所述的磁致电阻元件作为在存储单元装置内的存储元件应用。
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| DE19840823.4 | 1998-09-07 | ||
| DE19840823A DE19840823C1 (de) | 1998-09-07 | 1998-09-07 | Magnetoresistives Element und dessen Verwendung als Speicherelement in einer Speicherzellenanordnung |
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| DE10350161A1 (de) * | 2003-10-28 | 2005-06-09 | Infineon Technologies Ag | Magnetoresistive Speicherzelle und Verfahren zu deren Herstellung |
| US20070121254A1 (en) * | 2005-11-29 | 2007-05-31 | Honeywell International Inc. | Protective and conductive layer for giant magnetoresistance |
| US9166152B2 (en) | 2012-12-22 | 2015-10-20 | Samsung Electronics Co., Ltd. | Diffusionless transformations in MTJ stacks |
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| JP2701743B2 (ja) * | 1994-07-01 | 1998-01-21 | 日本電気株式会社 | グラニュラー物質およびこれを用いたグラニュラー膜 |
| US5965942A (en) * | 1994-09-28 | 1999-10-12 | Sharp Kabushiki Kaisha | Semiconductor memory device with amorphous diffusion barrier between capacitor and plug |
| US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
| US5541868A (en) | 1995-02-21 | 1996-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Annular GMR-based memory element |
| US5667879A (en) * | 1995-09-13 | 1997-09-16 | Honeywell Inc. | TaN/NiFe/TaN anisotropic magnetic sensor element |
| TW367493B (en) * | 1996-04-30 | 1999-08-21 | Toshiba Corp | Reluctance component |
| JP3253557B2 (ja) * | 1997-05-07 | 2002-02-04 | 株式会社東芝 | 磁気抵抗効果素子とそれを用いた磁気ヘッドおよび磁気記憶装置 |
| US5804250A (en) * | 1997-07-28 | 1998-09-08 | Eastman Kodak Company | Method for fabricating stable magnetoresistive sensors |
| US5956267A (en) * | 1997-12-18 | 1999-09-21 | Honeywell Inc | Self-aligned wordline keeper and method of manufacture therefor |
-
1998
- 1998-09-07 DE DE19840823A patent/DE19840823C1/de not_active Expired - Fee Related
-
1999
- 1999-07-01 JP JP2000569406A patent/JP2002524865A/ja active Pending
- 1999-07-01 KR KR1020017002946A patent/KR100576927B1/ko not_active IP Right Cessation
- 1999-07-01 WO PCT/DE1999/001942 patent/WO2000014748A1/de not_active Application Discontinuation
- 1999-07-01 EP EP99942760A patent/EP1112575B1/de not_active Expired - Lifetime
- 1999-07-01 DE DE59903857T patent/DE59903857D1/de not_active Expired - Lifetime
- 1999-07-01 CN CNB998106690A patent/CN1149578C/zh not_active Expired - Fee Related
- 1999-07-06 TW TW088111429A patent/TW469451B/zh not_active IP Right Cessation
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2001
- 2001-03-07 US US09/801,210 patent/US6495873B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100476997C (zh) * | 2001-10-16 | 2009-04-08 | 自由度半导体公司 | 提高可伸缩性的磁电阻随机存取存储器 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW469451B (en) | 2001-12-21 |
| US20010024388A1 (en) | 2001-09-27 |
| EP1112575B1 (de) | 2002-12-18 |
| EP1112575A1 (de) | 2001-07-04 |
| DE59903857D1 (de) | 2003-01-30 |
| DE19840823C1 (de) | 2000-07-13 |
| US6495873B2 (en) | 2002-12-17 |
| KR100576927B1 (ko) | 2006-05-10 |
| KR20010102907A (ko) | 2001-11-17 |
| JP2002524865A (ja) | 2002-08-06 |
| CN1149578C (zh) | 2004-05-12 |
| WO2000014748A1 (de) | 2000-03-16 |
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