CN1311294C - Heating device - Google Patents
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- CN1311294C CN1311294C CNB031077560A CN03107756A CN1311294C CN 1311294 C CN1311294 C CN 1311294C CN B031077560 A CNB031077560 A CN B031077560A CN 03107756 A CN03107756 A CN 03107756A CN 1311294 C CN1311294 C CN 1311294C
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- A61F9/00—Methods or devices for treatment of the eyes; Devices for putting-in contact lenses; Devices to correct squinting; Apparatus to guide the blind; Protective devices for the eyes, carried on the body or in the hand
- A61F9/08—Devices or methods enabling eye-patients to replace direct visual perception by another kind of perception
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Abstract
An IR heater H which is a heating device is composed of a heat generation part 1 in which a resistance body is arranged between an insulation glass like a thin film and a protection glass so as to nip and hold it, an air feed passage 2 which is arranged to receive heat in the heat generation part 1 in a range opposing to a substrate W and in which air is supplied, an intake passage 3 arranged in the same way to suck the air containing sublimed gas or the like, many blow-out holes 21 and suction holes 31 distributed uniformly, and a heat radiation body 7 forming them, radiating heat by receiving heat in the heat generation part 1, and composed of an upper plate 4, an intermediate plate 5, and a lower plate 6. Since sublimed gas can be exhausted by feeding and sucking air by the IR heater only by only a narrowly-limited volume part between the IR heater and the substrate W when they are mounted in a heat treating device, exhaust efficiency is improved, a duct becomes unnecessary, and the heat treating device can be miniaturized.
Description
Technical field
The present invention relates to a kind ofly possess heating part and be arranged on the opposite side that produces the tabular object of the special gas that should get rid of because of heating, can heat the thermal treatment heating arrangement of described object equably, be specially adapted to the Technology for Heating Processing of flat pannel display (FPD) such as LCD, organic EL, PDP with the photoetching treatment of employing photoresist in the glass substrate manufacturing process.
Background technology
In the Technology for Heating Processing of FPD glass substrate etc., usually, will support, place several substrates therebetween, utilize the IR well heater that substrate is heated to set point of temperature and heat-treat as the IR well heater laminated multi-layer of far infra-red heater.At this moment, for this substrate is carried out photoetching treatment, and be heated to high temperature in heat treatment process, then contained sublimability gas or all kinds of solvents promptly produces volatilization gas in the photoresist.
For this reason, need to reduce the concentration of the special gas G that produces in the thermal chamber and get rid of, way in the past is shown in Figure 14 (a), part as annealing device 100, base plate supports pin (pin) the P supporting substrate W that utilization is stood and is provided with in the IR heater H, from the IR heater H downwards distribute heat with heated substrates, get rid of because heating from testing laboratory 101 simultaneously, the special gas G that is produced from substrate W, for this reason, setting comprises the exhaust system of supplying gas of plenum duct 102 and inlet channel 103, can send into flow air to whole test chamber 101 and substrate W abreast as shown by arrows, special gas G is blended in wherein discharges.
But the problem that this device exists is, for thermal chamber 100 integral body are taken a breath, it is big that swept volume becomes, after the mixed gas diffusion of the produced simultaneously special gas G and the air mixed of supplying gas, be sucked into inlet channel 103, so, the scavenging efficiency of special gas G is poor, the ventilation air quantity increases thermal loss and increases, and simultaneously, needs the inlet channel of a large amount of air of inspiration, to annealing device is maximized, installation cost increases.
Moreover, because a large amount of air flows through substrate surface, increased the air themperature of supplying gas to the influence of substrate W, descend in the temperature of airflow upstream side substrate, increase the even problem of temperature distributing disproportionation when existing substrate heat to handle at downstream side.If to the IR heater H, carry out temperature controlled words respectively corresponding to the position on the plane, the structure of device is complexity and cost up not only.
In addition, air is blown out shown in (b) from the IR heater H, the annealing device that the gas that makes generation is got rid of from the exhaust system of the inlet channel 103 that comprises both sides thereupon together as figure.This example has adopted the special IR well heater of opening the far infrared generation source that the having of flat 30-62489 communique form by the porous ceramics sintered body, can discharge air from porous.
But, in the IR of this structure well heater, also being provided with admission line, whole air of discharging thermal chamber is so the identical thermal loss that exists with (a) shown device increases the problem that device maximizes, cost increases.
Summary of the invention
For this reason, the present invention will solve the problems referred to above in the conventional art, and it is a kind of that its purpose is to provide, and be arranged on the small-sized heating arrangement on the annealing device that can get rid of to the high heat effect of enough a spot of air the gas that should handle that object produced.
In order to solve above-mentioned problem, the present invention's 1 thermal treatment IR well heater, possesses heat generating part (1), and be configured in the opposite side that produces the substrate (w) of the special gas that should get rid of by the heating of above-mentioned heat generating part (1), can heat described substrate (w) equably, it is characterized in that: have the air intake passage (3) that is provided with a plurality of inlet holes (31), described air intake passage (3) is arranged on the opposite side of described substrate (w), and accept the heat of described heat generating part (1), suck the gas of the mixed gas that is made of gas supplied and the described special gas that wherein contains simultaneously, described inlet hole (31) is evenly distributed on the opposite side of described substrate (w) and can sucks described mixed gas.
The present invention's 2 is on above-mentioned basis, it is characterized in that, have and be configured in a side relative with described substrate (w), accept the heat of described heat generating part (1), and the plenum duct of supply gas (2), described plenum duct (2) has a plurality of holes (21) that blow out of the opposite side that is evenly distributed on described substrate (w).
Description of drawings
Fig. 1 illustrates the one-piece construction of IR well heater of the present invention, (a) is vertical view, (b) is the sectional view of the Width of (a), (c) is the sectional view of the length direction of (a).
Fig. 2 is the part figure that above-mentioned IR well heater is installed in the state on the annealing device.
Fig. 3 is the structural drawing of above-mentioned IR well heater heat generating part, (a) is vertical view, (b) is sectional view.
Fig. 4 (a) and (b) be the expression air supply system of above-mentioned IR well heater and the key diagram of air suction system one example.
Fig. 5 is that the air of the above-mentioned IR well heater of expression blows out and the key diagram of suction condition.
Fig. 6 is the fragmentary cross-sectional view of another structure example of expression IR well heater of the present invention.
Fig. 7 is the fragmentary cross-sectional view of the another structure example of expression IR well heater of the present invention.
Fig. 8 is the sectional view of the another structure example of expression IR well heater of the present invention.
Fig. 9 is the sectional view of the another structure example of expression IR well heater of the present invention.
Figure 10 illustrates another structure example of IR well heater of the present invention, (a) is vertical view, (b) is the sectional view of the Width of (a).
Figure 11 is the key diagram of a part of structure that the annealing device of above-mentioned IR well heater has been installed.
Figure 12 is another routine key diagram of a part of structure that the annealing device of above-mentioned IR well heater has been installed.
(a) of Figure 13 and (b) be the key diagram of the state of temperature in above-mentioned other examples.
(a) of Figure 14 and (b) be to represent that the gas of the generation of IR well heater in the past discharges the key diagram of state.
Embodiment
Fig. 1 illustrates the one-piece construction of the far infrared irradiation heater H (hereinafter to be referred as " IR heater H ") as heating arrangement of the present invention, and Fig. 2 is that the IR heater H is installed in the local state on the annealing device.Fig. 3 is an example of the schematic construction of this heat generating part, and Fig. 4 is installed on the annealing device plenum system and suction system when using with the IR heater H.Be that the basis illustrates one by one with reference to other figure below with Fig. 1.
The IR heater H, has heat generating part 1, and as shown in Figure 2, with relative and put with glass substrate W (hereinafter to be referred as " substrate W ") as the flat pannel display (FPD) of tabular object, it is the apparatus for heat-treatment of heated substrates W equably, in this example, have as the plenum duct 2 of gas supply part and as the air intake passage 3 of gas suction portion.Partly be provided with the radiator of forming by upper plate 4, intermediate plate 5 and lower plate 67 as agent structure.Heat generating part 1 is as a whole with this radiator 7, can pass through radiator 7 heated substrates W.Moreover, in this radiator 7, form plenum duct 2 and air intake passage 3.
Substrate W just produces the special gas that should get rid of once heating.That is, because substrate W such as FPD have been carried out photoetching treatment for development, so when in heat treatment step, being heated to high temperature, the special gas that the gas that produces the gas that produced by the distillation of photoresist or all kinds of solvents volatilization and produce is constituted.This special gas is at object, under distinctive solidification temperature, reach finite concentration and just solidify once more, can pollute the relevant various piece of annealing device, perhaps in the subsequent handling of semiconductor circuit, become nuisance, so it should be got rid of, make density loss to being lower than normal concentration.
As shown in Figure 3, heating part 1, be by the insulator 11 that forms by screen painting film like ground, protection electric capacity 12 and between portion of terminal 13, resistance 14 and being connected with silver-colored the wiring 15 constitute.Insulator 11 and protection electric capacity 12 adopt suitable materials such as pottery, to make it producing far infrared IR by the heating of resistance 14.Therefore, the main upwards radiation in Fig. 3 (b) of the IR in this example.As shown in the figure, if side is appended the electric capacity of the IR radiative material 10 identical with protecting electric capacity 12 below radiator 7, then just can radiate downwards also can be from top irradiated substrate W for IR.
In this case; during according to circuit structure of substrate W etc. and as main needs from top irradiation; lay resistance at lower plate 6 places of side below radiator 7 and avoid and to blow out hole 21 and inlet hole 31, the heat generating part 1 with insulator 11 and protection electric capacity 12 is set simultaneously replaces illustrating the IR active material.Under above-mentioned state, be ultra-thin material about tens microns though film like IR radiative material is a thickness, in order clearly to represent structure, the thickness on the drawing is represented to become thicker.
Air intake passage 3 too, be arranged on the opposite side of substrate W and accept the heat of heating part 1, simultaneously, as supply gas, in this example, blow out by from blowing out the mixed gas that air that hole 21 blows out and the above-mentioned special gas that produces from substrate W constitute by the air intake system 9 shown in Fig. 4 (b), have the below of the opposite side that is evenly distributed on substrate W, can suck a plurality of inlet holes 31 of above-mentioned mixed gas simultaneously as the gas inlet hole.Identical+symbolic representation is also used in the center of inlet hole 31.
As mentioned above, on radiator 7, form plenum duct 2 and air intake passage 3 in this example.That is, these are to be processed into to run through groove on the thickness direction of intermediate plate 5, covering and forming with upper plate 4 and lower plate 6 up and down groove.Utilize screw retention, welding, suitable method such as bonding that plate 4,5,6 is combined.Have in advance in the lower plate 6 and blow out hole 21 and inlet hole 31.
Plate 4,5,6 requires to have intensity, thermotolerance and corrosion resistivity to a certain degree, and for example, adopting materials such as stainless steel or aluminium is preferably.Especially stainless steel, its intensity is high and because of its proportion thermal capacity is big, so radiator 7 can be processed into thin slice, is optimal material.Actual goods, for example, even be used for the IR well heater that heated length is the large substrate W of 1000mm, its general thickness also can be accomplished about 10mm to 5mm.And the heat distortion amount equalization that plate 4,5,6 can adopt common material that temperature variation is caused prevents thermal deformation.
For example have among the substrate W under 500 ℃ of high temperature by heat treated, at this moment, utilize inert gas such as nitrogen or hypoxic oxygen denuded air to replace air, in this case air supply system 8 and supply with intake system 9 and just handle this kind gas to prevent the oxidation of substrate W.
A plurality of hole 21 and inlet holes 31 of blowing out, together be evenly distributed on substrate W opposite side, and in this example, on each row of IR heater H width B direction, plenum duct 2 and air intake passage 3 are set, and extend to the length L direction, on each row so that hole 21 and hole 31 to be set equally spacedly, thus, gas passage 2 and air intake passage 3 corresponding to substrate W, are distributed equably.
Moreover, in this example, be provided with inlet hole 31 at the two ends of width B direction, simultaneously in the length L direction, be provided with additional inlet hole 31 to end position from blowing out hole 21.Like this,, can obtain air curtain effect to a certain degree, can will blow out air that hole 21 blows out inspiration inlet hole 31 more reliably by the inlet hole 31 of end on every side.But if the intake capacity of inlet hole 31 is strong, the air that then blows out all is recycled in the inlet hole 31, so not necessarily will dispose like this.
In addition in this example, as shown in the figure, to blow out hole 21 and inlet hole 31 in the width B direction with less spacing, and be arranged to rectangle with big spacing in the length L direction, simultaneously the opening diameter of inlet hole 31 is bigger than the opening diameter that blows out hole 21, but also can make the spacing of both direction identical or be arranged to square or serrate or make the aperture area in two holes identical or change size etc. on the contrary.Can or send the arrangement and the size in the above-mentioned hole of all condition appropriate changes of inspiratory capacity etc. according to the flat shape or the spacing between the substrate W of IR heater H, make air blow out swimmingly from blowing out hole 21, be diffused on the substrate W, be recovered in the inlet hole 31 by abundant the suction simultaneously.
Though omit diagram, the same with common structure, be provided with the mount pad of screw etc. so that the support pin P that places substrate W to be installed in the IR heater H.This support pin P for example is provided with totally 12 of 3 rows and 4 rows on width B and length L direction.Bridge top gem of a girdle-pendant shape stay pipe also can be set to replace support pin P in the both sides of width B direction.In addition, also above-mentioned support pin of lifting or stay pipe as required.
IR heater H as implied above is installed on the annealing device 100, its effect of performance under following user mode.
As shown in Figure 2, should heat treated substrate W be supported, be placed in the IR heater H of being arranged to multilayer on the support pin P below the 2nd layer except the superiors, by the IR heater H on its upper strata, mainly be heated respectively from the top by mechanical arm 200 absorption.
In the IR heater H, to portion of terminal 13 power supplies of heat generating part 1.Like this, resistance 14 heatings, its heat transferred radiator 7, radiator 7 heats up together through certain hour, temperature control to 250 ℃ in this example, by IR active material 10 emitting far infrared ray IR downwards, be configured in following substrate W and be heated to heat treatment temperature about 23 ℃ as implied above.Like this, substrate W will produce a spot of special gas G that is made of distillation gas or volatilization gas etc.
In order to handle this special gas G, air supply system 8 and air intake system 9 are started working.Promptly, at air supply system 8, air supply plant 81 is discharged air, this air successively through main supply gas 82, pair supplies gas 83 and the pair take-off pipe 84 of supplying gas, supply with in all plenum ducts 2 of each layer, each row, static pressure wherein for example is made as about 50mmAq, as shown in Figure 5, utilizes outside difference to become blow out air A from blowing out hole 21 with static pressure
1Be blown, arrive substrate W surface and also scatter in the above.Like this from blowing out the blow out air A that hole 21 blows out
1Be mixed into the mixed gas A of low concentration with the above-mentioned a small amount of special gas G that produces from substrate W
2
At this moment, blow out air A
1The plenum duct 2 of the heat generating part 1 of process high temperature, and temperature becomes very high, so can under the condition of high temperature, mix with the special gas that produces.In addition, the blow out air A of high temperature
1Be diffused into the surface of substrate W equably,, play the equally distributed effect of the temperature that makes substrate W so be heated equably.Promptly, the IR heater H provides heat by radiator 7 equably to substrate W, arrange setting at regular intervals because have the resistance 14 of certain width, so on substrate W surface, the position corresponding with resistance 14 and with corresponding position, this interval between how much produce some temperature difference, but, heated blow out air A
1The surface of contact substrate W acts on temperature contrast so play uniformly equably.Moreover, shown in the doublet of Fig. 4,, the well heater 85 of preheated air is set if according to demand, then can give full play to this effect.
Getter device 91 in the air intake system 9 is main to suck as suction air A blow out air, that formed by the mixed gas that contains the low concentration special gas
2This sucks air A
2, utilize the negative pressure about the 100mmAq in the air intake passage 3 that suction apparatus 91 forms, from inlet hole 31 inspirations, in the inspiration getter device 91, deliver to the position discharge that can discharge by secondary air-breathing take-off pipe 4, secondary suction head 93, main suction head 92 successively.
This occasion is because suck air A
2By the air intake passage 3 of high temperature, so keep the condition of high temperature.Its result, the suction gas that is inhaled into and discharges from getter device 91 can keep suitable temperature until discharge, can prevent the condensation again that descends and cause because of excessive temperature in pipe arrangement.In addition, because will blow out hole 21 and inlet hole 31 with respect to substrate W, all be provided with equably, so plenum duct 2 and air intake passage 3 are provided with can be shown in this example alternately, thereby produce heat exchange action between the supply gas that suction air that temperature raises and temperature should raise, the heat of radiator 7 mainly is supplied to air and takes away, so, thermal efficiency height.
According to above IR-heater H, then as shown in Figure 2, air blow out and suck be equivalent between IR heater H and the substrate W less apart from Z
1Little volume space in carry out, so scavenging efficiency is splendid.That is, for example, in 10 layers the annealing device of large substrate W of the long 100mm of wide 800mm is housed, comprise the height Z that is equivalent to support pin P
2Volume, be about 3m with annealing device integral body as the ventilation volume of the conventional apparatus of object ventilation
3/ minute, and in the annealing device of the present invention, by blow out air A
1Amount Q
1The perhaps suction air A of roughly the same amount with it
2Amount Q
2The ventilation volume that constitutes be before about 1/6 0.5m of device
3/ minute.
Its result according to IR heater H of the present invention, can discharge special gas such as distillation gas effectively in the low concentration stage, do not need the large-scale air intake passage etc. of supplying gas, and can make the annealing device miniaturization, reduces cost.
Fig. 6～Fig. 9 is another structure example of IR heater H of the present invention.
Wherein, shown in Figure 6 and Fig. 1 have compared that some is different, be plenum duct 2 and air intake passage 3 independence and form the groove shape separately, the substrate W side of the downside that heat generating part 1 is arranged on lower plate 6 below promptly, plenum duct 2 and air intake passage 3 are accepted the heat of heat generating part 1 from below and are constituted radiator 7 etc. with lower plate 6.This structure can replace the IR active material 10 of Fig. 1, and the insulator 11 and the protection electric capacity 12 that constitute heater 1 form the IR active material.Moreover, in this example, can on passage 2,3, support pin P be installed by proper spacing.
This routine IR heater H has the effect identical with Fig. 1.This occasion, heater 1 are directly facing to substrate, so heat conductivity is better.But, because the interval of resistance 14, heat inhomogeneous, but, owing to blowing out heated air, so can produce the effect of alleviation.
The IR heater H of Fig. 7 possesses plenum duct 2 and air intake passage 3 with Fig. 6 same structure.But radiator 1 is installed in upside across upper plate 4.Blowing out hole 21 and inlet hole 31 is set directly on the passage 2,3.The effect of this example and Fig. 1, shown in Figure 6 identical.
The IR heater H of Fig. 8, by the aluminium of handling through pellumina etc. itself for for example thicker upper plate 4 about 10mm of IR active material, the intermediate plate 5 that forms by same material, be clipped in therebetween radiator 1, process plenum duct 2 and the air intake passage 3 that on intermediate plate 5, forms and cover above-mentioned and have the lower plate 6 that blows out hole 21 and inlet hole 31 etc. by groove and form.This routine IR heater H also has identical effect with the IR heater H of Fig. 1 etc.
The IR heater H of Fig. 9, identical with Fig. 8 is to have the radiator 1 that the IR active materials such as aluminium handled through pellumina form; Constitute, be formed with the structure of radiator 7 injection well 21 and inlet hole 31, that make with radiator 1 split by stainless steel.Heater 1 and radiator 7 C separated by a certain interval respectively are installed in the not shown thermal chamber respectively.
The IR heater H of this structure also has the action effect identical with former device, but in this IR heater H, radiator 7 is accepted the heat of heater 1, the air of heating turnover, simultaneously, the substrate W below the heating of top, but,, utilize heater 1 direct heated substrates W mainly from following.The IR heater H of this structure also has the action effect identical with former device.Its advantage is directly to use common IR well heater that the market pin sells as heater 1.
Fig. 1, Fig. 6 and Fig. 7 are to use stainless IR well heater, because can make its thickness attenuation, so by its thin typeization and lightweight, the also further miniaturization and the lightweight of annealing device of equipment IR well heater.
In addition, adopt the technological thought that makes plenum duct and air intake passage be arranged on substrate W opposite of the present invention, for example undersized with silicon chip etc., when answering the little element of heating heat to be heat treatment object, can omit the heat generating part 1 of direct heated substrates W, in thermal treatment, use the heating material that only makes pre-heated air flow plenum duct.
Figure 10 to Figure 12 illustrates another structure example again of IR well heater of the present invention and a part of equipping the annealing device of this IR well heater.
The structure of the IR heater H in this example is identical with Fig. 1's, and still, the part of intermediate plate 5 has only air intake passage 3.Gas supplied, as shown in Figure 1 not from air intake passage 3 one plenum duct 2 that intermediate plate 5 forms that coexists, but as Figure 11 or shown in Figure 12, by path 10 2 supplies of annealing device 100.To path 10 2, by air supply plant 81 as shown in Figure 4, the well heater 85 through being provided with as required provides air.For air intake passage 3, as shown in Figure 4, the air intake system 9 that comprises getter device 91 is set.
The IR heater H that this is routine, it is the part of the intermediate plate 5 between upper plate 4 and lower plate 6, there is not plenum duct 2 shown in Figure 1, the structure that the suction special use of air intake passage 3 is only arranged, so, compare with 6 states of arranging as shown in the figure, can further reduce the part and the air-breathing quantity of the intermediate plate that on the width B direction, separates air intake passage 3 with short tube 71.
This routine IR heater H is also brought into play the effect that is similar to Fig. 1.Promptly, during thermal treatment, special gas G for treatment substrate W generation, getter device 91 and air supply plant 81 runnings, from the not shown path of supplying gas with air feed channel 102 in, a spot of like this air flow substrate W adds a small amount of special gas G that is produced by heated substrate W surface, and forms the mixed gas A of low concentration
2, they will be sucked in the air intake passage 3 that applies negative pressure in advance by inlet hole 31 by air intake system 9.The air that path 10 2 provides is heated to the heat treatment temperature of substrate W usually by well heater 85.
According to this routine IR heater H, the air of supplying gas is sent to from substrate W side, to a certain degree to be diffused in the testing laboratory 100, still, because the IR heater H of the air intake passage 3 with inlet hole 31 openings is set with narrower interval in the position relative with substrate W, so, the special gas G that substrate W produces, the surface diffusion D that can not leave substrate W arrives other place, and along with in the direct inspiration inlet hole 31 of the air that provides, so the scavenging efficiency of special gas G is splendid.
Therefore, even reduce the air capacity of supplying with, the concentration of the special gas in the thermal chamber 101 is dropped to below the aimed concn.Its result, the air demand of annealing device are more slightly when using IR heater H shown in Figure 1, but, below 1/3 of still former device.And do not need big air intake passage, can make the annealing device miniaturization and reduce cost.
At this moment, in the device of Figure 12, supply gas with path 10 2 as 102
1And 102
2Be arranged on the both sides of substrate W, so almost half of the air that the path 10 2 of Figure 11 provides is respectively by the path 10 2 of both sides
1And 102
2Supply with.But, because the passage branch is located at both sides, so only need append this part-structure.Yet, if like this passage is arranged on both sides, from symmetria bilateralis supply gas, control the temperature of IR heater H easily, simultaneously, the heat treatment temperature of control basal plate W accurately.
The control sketch that resistance 14 is used in one example of the state of temperature of the each several part when Figure 13 illustrates with the device treatment substrate W of Figure 12 and the heating shown in Fig. 3 (a).
For example, the heat treatment temperature of substrate W is made as Tw=250 ℃, the average heating temp of IR heater H is made as Thm=280 ℃, by both sides path 10 2
1, 102
2The air themperature that provides is made as Ta=250 ℃.Under this state, the air of temperature T a one arrives the end parts of substrate W, just thereupon to central flows, begins to absorb heat and heat up from the IR heater H, and the heat affecting that substrate W is applied changes, and the W of substrate can not reach Tw equably.For this reason, be not to make the temperature of IR heater H on whole area, reach same temperature T hm, but by changing the methods such as heating output density of resistance 14, the planimetric position of corresponding IR heater H and change Thm.
At this moment, because from the passage of both sides air supply symmetrically, so can control the temperature of IR heater H two side directions symmetrically.That is, describe,, be divided into H by 4 angle parts before the IR heater H generation intensification effect simultaneously because to lower than heat treatment temperature on the whole Low Temperature Heat Treatment chamber 101 sides heat radiation, air very easily cools off by the simplest state of a control of scheming (b) together
1, center section is divided into H
2, the middle body with the intensification of well heater heat when not having heat radiation is divided into H
3, with this part in the middle end vertical with the air direction of the supply be divided into H
4The time, make the heat generation density of resistance 14, at H
1Maximum, H
3Minimum, H
2And H
4In the centre.
Its result, temperature control easily can make simultaneously the heat treatment temperature of each position on the base plan more accurately even.Also can be even the size of substrate has become by same design conditions design IR heater H.
The structure of device shown in Figure 11 is sought simple and direct, but can not control symmetrically as described above, so temperature control is difficult to, so when being applicable under fixing condition such as heat treatment temperature or substrate size the same goods of thermal treatment, can wait annealing device that abundant grasp temperature characterisitic designs and make etc. by experiment.
According to the invention described above, the present invention's 1 is, because have heat generating part, and be arranged on the opposite side of the tabular object of the special gas that the generation of heating back should get rid of, the thermal treatment that forms with heating target thing equably is with in the heating arrangement, the gas that setting has a fixed structure sucks part, so, the special gas of process object deposits yields extremely efficiently.
Promptly, gas suction portion has: be evenly distributed on the object opposite side, and can suck by institute's gas supplied and be included in a plurality of gas inlet holes of the mixed gas that above-mentioned special gas wherein constitutes, be set at the scope relative with object, and accept the heat of heating part, to suck mixed gas, so, can be the special gas that should handle that produces from object, as discharging with the mixed gas of gas supplied.
Its result, because this heating arrangement is equipped on the annealing device, so utilize the special gas of the process object deposits yields of heating arrangement own, can prevent the solidifying once more on the relevant part periphery of object and annealing device that causes owing to its high concentration.
At this moment, because suck this gas from scope with the object opposite side, so, only need to supply with a spot of gas and just can discharge the special gas that object produces efficiently.
Promptly, as former device, suction passage is set on annealing device, get rid of when being diffused into the special gas of thermal chamber integral body, need carry out big volume gas displacement, air demand increases, and all simultaneously efficient of discharging is poor, and the concentration of special gas is easy to raise in the thermal chamber, but, because only in object and gas suction portion narrow defined volume part in opposite directions, special gas is mixed and discharge, so, compare very little with the integral body of thermal chamber, and divide correspondingly with this capacity in opposite directions, air demand reduces, simultaneously, do not allow special gas distribute, thereby gas reclaiming rate is fine, and the concentration of the special gas in the thermal chamber can remain on low-level.
Because the minimizing of supply gas amount or do not need air intake passage etc., when annealing device is installed heating arrangement, can make the annealing device miniaturization and simplify the structure, further reduce cost.
In the present invention's 2 the invention, on above-mentioned basis, gas supply part at the couple positioned opposite supply gas of object divides to accept the heating part heat, constitute a plurality of gas exhausts hole that is evenly distributed on the object opposite side, so, can blow out the hole from gas and blow out the heat of accepting heat generating part and heated gas, equably to tabular object surface air feed.Its result, special gas that can the intelligence-collecting object deposits yields is mixed into the mixed gas that is lower than this concentration.In addition, by the surface of heat generating part heating target thing, the surface of the heated air contact object thing that this is evenly supplied with makes the Temperature Distribution on object surface more even, can further improve thermal effectiveness.In addition, can be above-mentioned special gas, as discharging with the mixed gas of supply gas.
At this moment, gas blows to object from the scope relative with object, and sucks this gas from identical scope, so, only need provide a small amount of gas just can discharge the also special gas of process object deposits yields more efficiently.That is, to the volume part air feed of the gas suction portion narrow qualification relative with gas supply part, only this can discharge the mixing special gas, so, can reclaim special gas efficiently by enough gas still less.
Claims (2)
1. far infrared irradiation well heater, has heat generating part (1), and be arranged on the opposite side that produces the substrate (w) of the special gas that should get rid of when being heated by described heat generating part (1), can heat the thermal treatment IR well heater of described substrate (w) equably, it is characterized in that: have the air intake passage (3) that is provided with a plurality of inlet holes (31), described air intake passage (3) is arranged on the opposite side of described substrate (w), and accept the heat of described heat generating part (1), suck the gas of the mixed gas that is made of gas supplied and the described special gas that wherein contains simultaneously, described inlet hole (31) is evenly distributed on the opposite side of described substrate (w) and can sucks described mixed gas.
2. far infrared irradiation well heater according to claim 1, it is characterized in that: have and be configured in a side relative with described substrate (w), accept the heat of described heat generating part (1), and the plenum duct of supply gas (2), described plenum duct (2) has a plurality of holes (21) that blow out of the opposite side that is evenly distributed on described substrate (w).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002155659A JP4048242B2 (en) | 2002-05-29 | 2002-05-29 | Heat treatment equipment |
| JP2002155659 | 2002-05-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1461970A CN1461970A (en) | 2003-12-17 |
| CN1311294C true CN1311294C (en) | 2007-04-18 |
Family
ID=29772133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031077560A Expired - Fee Related CN1311294C (en) | 2002-05-29 | 2003-03-31 | Heating device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4048242B2 (en) |
| KR (1) | KR100686893B1 (en) |
| CN (1) | CN1311294C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4619854B2 (en) | 2005-04-18 | 2011-01-26 | 東京エレクトロン株式会社 | Load lock device and processing method |
| KR100858462B1 (en) | 2007-05-15 | 2008-09-12 | (주) 세라트론 | Ceramic heater |
| KR101153631B1 (en) * | 2010-01-14 | 2012-06-18 | 삼성전기주식회사 | Sintering furnace for ceramic product and sinterring mothod using the same |
| WO2014054511A1 (en) * | 2012-10-03 | 2014-04-10 | シャープ株式会社 | Substrate firing device |
| MX2016016102A (en) | 2014-06-06 | 2017-07-11 | Nippon Steel & Sumikin Texeng Co Ltd | Far infrared heating furnace for steel plate for hot pressing. |
| US10774398B2 (en) * | 2014-06-06 | 2020-09-15 | Nippon Steel & Sumikin Texeng, Co., Ltd. | Far-infrared radiation multi-stage type heating furnace for steel sheets for hot stamping |
| KR102559562B1 (en) * | 2021-03-11 | 2023-07-27 | 주식회사 한국제이텍트써모시스템 | Heat treatment oven exhaust duct integrated heater unit |
| KR102551053B1 (en) * | 2021-05-12 | 2023-07-05 | 주식회사 한국제이텍트써모시스템 | Heater unit of heat treatment oven |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0362489A (en) * | 1989-07-28 | 1991-03-18 | Nippon Pillar Packing Co Ltd | Far infrared heating device |
| JPH1041360A (en) * | 1996-07-26 | 1998-02-13 | Haibetsuku:Kk | Selectively removing work to be heated |
| JPH1082583A (en) * | 1996-09-05 | 1998-03-31 | Noritake Co Ltd | Method for drying large substrate and drier |
| JPH11354487A (en) * | 1998-06-03 | 1999-12-24 | Dainippon Screen Mfg Co Ltd | Method and equipment for drying substrate |
| CN2433649Y (en) * | 2000-08-09 | 2001-06-06 | 李武明 | Automatic PS plate drying machine |
| CN1417600A (en) * | 2001-11-11 | 2003-05-14 | 华为技术有限公司 | Titanium diffusing method and equipment for preparing lithium niobate light waveguide |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02183794A (en) * | 1989-01-11 | 1990-07-18 | Fujitsu Ltd | Method and device for baking multi-layer ceramic substrate |
| JP3096965B2 (en) * | 1996-07-16 | 2000-10-10 | 日立テクノエンジニアリング株式会社 | Substrate heating method and substrate heating furnace |
| JPH1154496A (en) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | Heat treatment system and gas processing system |
| JP3668400B2 (en) | 1999-11-10 | 2005-07-06 | 日本電信電話株式会社 | Drying equipment |
| JP2002195755A (en) | 2000-10-16 | 2002-07-10 | Matsushita Electric Ind Co Ltd | Heat treatment system |
-
2002
- 2002-05-29 JP JP2002155659A patent/JP4048242B2/en not_active Expired - Fee Related
-
2003
- 2003-03-05 KR KR1020030013583A patent/KR100686893B1/en not_active IP Right Cessation
- 2003-03-31 CN CNB031077560A patent/CN1311294C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0362489A (en) * | 1989-07-28 | 1991-03-18 | Nippon Pillar Packing Co Ltd | Far infrared heating device |
| JPH1041360A (en) * | 1996-07-26 | 1998-02-13 | Haibetsuku:Kk | Selectively removing work to be heated |
| JPH1082583A (en) * | 1996-09-05 | 1998-03-31 | Noritake Co Ltd | Method for drying large substrate and drier |
| JPH11354487A (en) * | 1998-06-03 | 1999-12-24 | Dainippon Screen Mfg Co Ltd | Method and equipment for drying substrate |
| CN2433649Y (en) * | 2000-08-09 | 2001-06-06 | 李武明 | Automatic PS plate drying machine |
| CN1417600A (en) * | 2001-11-11 | 2003-05-14 | 华为技术有限公司 | Titanium diffusing method and equipment for preparing lithium niobate light waveguide |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4048242B2 (en) | 2008-02-20 |
| KR20030093090A (en) | 2003-12-06 |
| JP2003343982A (en) | 2003-12-03 |
| KR100686893B1 (en) | 2007-02-27 |
| CN1461970A (en) | 2003-12-17 |
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