CN1306300A - Semiconductor device and its mfg. method - Google Patents

Semiconductor device and its mfg. method Download PDF

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Publication number
CN1306300A
CN1306300A CN01101509A CN01101509A CN1306300A CN 1306300 A CN1306300 A CN 1306300A CN 01101509 A CN01101509 A CN 01101509A CN 01101509 A CN01101509 A CN 01101509A CN 1306300 A CN1306300 A CN 1306300A
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China
Prior art keywords
projection
semiconductor
semiconductor device
protectiveness material
semiconductor substrate
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CN01101509A
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Chinese (zh)
Inventor
保坂俊
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Seiko Instruments Inc
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Seiko Instruments Inc
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Publication of CN1306300A publication Critical patent/CN1306300A/en
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Abstract

Forming IC packages in the wafer state, provided is the IC packages of the same size with an IC chip. Bumps are bonded to electrode pads in a wafer state, then protective material is applied on a wafer, and the bumps are exposed. Thereafter, the wafer is cut off along scribe lines, and an IC package is completed.

Description

Semiconductor device and manufacture method thereof
The present invention relates to the structure of a kind of size so-called chip size packages identical and the manufacture method of this encapsulation with integrated circuit (IC) chip.
Be called the IC encapsulation of chip size packages, the operation that its manufacture always is encapsulated in this class each IC chip is separated from each other forms afterwards.
General IC encapsulation needs a certain amount of marginal portion and for example makes that each IC can be encapsulated in wherein, although thereby be called " chip size packages ", its size is more much bigger than IC chip.In addition, making this class IC encapsulation needs complicated technology, thereby cost was both high, and manufacturing time is long again.
Consider the problems referred to above, thereby the purpose of this invention is to provide a kind of shape, size and the identical semiconductor device of its integrated circuit (IC) of the IC of being encapsulation, method is to produce the IC encapsulation under the disk state.
For reaching this purpose; semiconductor device provided by the invention is formed with a semiconductor element in its Semiconductor substrate, the electrode slice on the Semiconductor substrate is connected with a projection; at least one cylindrical section of projection exposes, and the other parts of projection then are covered with by the protectiveness material.The IC encapsulation to be made this semiconductor device, can each projection and each electrode slice be coupled together, apply the protectiveness material again, the projection part is all exposed, and then, make the IC encapsulation along line cutting disk at the disk state.
In the accompanying drawing:
Fig. 1 is the structure chart of the semiconductor device IC encapsulation of disk size;
Fig. 2 A and 2B are the schematic diagrames that semiconductor device of the present invention is installed situation;
Fig. 3 A to 3B shows the manufacture method of semiconductor device of the present invention;
Fig. 4 A to 4C shows the manufacture method of making the projection that uses in the semiconductor device of the present invention;
Fig. 5 shows the method for making semiconductor device by an alternative embodiment of the invention.
The present invention relates to a kind of method of producing the size IC encapsulation identical with its integrated circuit (IC) chip.Referring now to description of drawings one embodiment of the present of invention.
Fig. 1 is the cutaway view that the present invention makes the IC encapsulating structure of disk size.Electrode slice 2 forms on the surface of Semiconductor substrate 1.The surface coverage of Semiconductor substrate 1 has diaphragm 3.The integrated circuit (not shown in figure 1) all forms in Semiconductor substrate.
Above said is the forming process of IC chip.According to the present invention, projection 4 is connected with the electrode slice 2 of each IC chip, and each projection is convex, as shown in fig. 1.IC chip surface-coated has protectiveness material 5.
The IC encapsulation of said structure has following characteristics:
(1) size is identical with the IC chip;
(2) the complete protected property material 5 of its IC chip covers, because the orifice edge of protective material 5 is on each projection 4.So just avoided foreign substance to enter the IC chip from external environment condition, for example water can not enter in fact in the IC chip, does not therefore have the problem of water in the IC chip, for example the problem of electrode slice corrosion.
Above-mentioned IC encapsulation also has such characteristics:
(3) the cylinder 4a owing to each projection 4 protrudes outside the protectiveness material 5, thereby easily each electrode is coupled together.Referring now to Fig. 2 A and 2B, this effect is described.Fig. 2 A is the structure cutaway view that encapsulates from the IC that the IC encapsulation of making the disk size shown in a group Fig. 1 is separated.Fig. 2 B shows the IC shown in Fig. 2 A and is contained in situation on the pedestal.Wiring lead 17 forms on the surface of pedestal 16.Wiring lead 17 is joined to one another with the cylindrical section 14a of projection 14.The cylindrical section 14a of projection 14 protrudes outside the protectiveness material 15, thereby the lead 17 that connects up easily and outward couples together.
Above-mentioned IC encapsulation also has such characteristics:
(4) because protectiveness material 5 is firmly fixed the IC chip, thereby the intensity of IC encapsulation is to have improved greatly compared with the state of IC chip individualism; And
(5) thus structure so simply makes the cost that comprises material price low.
Said above that IC encapsulation of the present invention can be used as the encapsulation of chip size.
Subsequent, describe the manufacture method that IC of the present invention encapsulates in detail.
Fig. 3 shows the situation of disk when the IC chip does not cut off as yet.Many IC are arranged in the disk.A plurality of electrode slices 22 and diaphragm 23 be equipped with on the Semiconductor substrate 21.Be formed with many semiconductor elements on the Semiconductor substrate 21.Semiconductor substrate 21 is made by compound semiconductor (for example silicon (si) semiconductor or gallium arsenide semiconductor or some other semiconductor).The material 22 of electrode slice 22 is aluminium (Al), aluminium alloy, the aluminium that contains some impurity element, copper (Cu), copper alloy, the copper that contains some impurity element or some other metal.Diaphragm 23 is silica (SiO 2) film, silicon nitride (SiNx) film, polyimide film or some other dielectric film.
Subsequent, as shown in Fig. 3 B, when still being in disk state shown in Fig. 1, the IC chip that projection 24 is made at a plurality of IC is connected with electrode slice 22.
Fig. 3 C is the enlarged drawing of Fig. 3 B part, and each electrode slice has all amplified.Projection 24 is made the shape that is projection as shown in Fig. 3 C.Making projection 24 possible methods is the methods that adopt the wire bonds machine.
In other words, form metal ball 35 referring to Fig. 4 A in metal wire 34 ends with the lead-in wire bonding apparatus.Then, as shown in Fig. 4 B, Metal Ball 35 is pressed onto on the electrode slice 32 of IV, with thermocompression bonding or ultrasonic wire bonding with Metal Ball 35 and electrode slice 32 each other bonding get up.Then, as shown in Fig. 4 C, cutting metal line 34 makes metal wire 34 length that stay suitable.Above-mentioned operation was carried out in the disk stage.From the size of disk as can be seen, some variation of the height of projection 36.Therefore, for making the total height unanimity, can after the step shown in Fig. 4 C, add the step of splaying.Projection part 34 and 35 material are alloy or some other material of for example brazing filler metal alloy, silver (Ag) and tin (Sn) composition formed of gold (Au), palladium (Pd), aluminium (Al), silver (Ag), plumbous (Pb) and tin (Sn).
Then, add protectiveness material 25, as shown in Fig. 3 D.Fig. 3 E is the enlarged drawing of Fig. 3 D part, and each electrode part has all prolonged.Protectiveness material 25 can be a fluent material, can be coated onto the whole surface of disk.In case of necessity by considering to set up final thickness is afterwards determined liquid protectiveness material 25 when applying thickness.In other words, regulate the thickness of the liquid protectiveness material 25 after applying, the cylindrical section of projection 24 fully exposed, the cylindrical section that promptly exposes look can be when the IC chip be contained on the pedestal can with the wiring portion bonding on the pedestal.After applying, cure liquid protectiveness material, make its curing in suitable temperature.This temperature of curing should suitably be selected, and makes protectiveness material 25 more stable and effective aspect the intensity of machinery and chemistry enhancing IC.
Like this, in disk, form a plurality of IC encapsulation.Subsequent, have a talk the separation procedure that each IC encapsulates.
, come along the cutting of the line in disk disk with slicing machine thereby each IC is encapsulated branch.So draw the wafer fragment that forms the IC encapsulation.
In the manufacturing process shown in Fig. 3 A to 3E, form protectiveness material 25 and make the mid portion of its surface in abutting connection with each projection cylindrical section 24a.But the protectiveness material also can make as shown in Figure 5 be that the protectiveness material 55 shown in Fig. 5 forms to such an extent that make its surface in abutting connection with the horizontal component of each projection or be lower than the part of projection horizontal component like that.
In sum, according to the present invention, the IC encapsulation forms under the disk state, thereby has reduced the number of processing step, thereby has reduced greatly the time between cost and shortening order and the delivery.
In addition, adopted projection, covered the horizontal component of projection, thereby the reliability of semiconductor device and quality are obviously improved with the protectiveness material.

Claims (5)

1. semiconductor device comprises:
A Semiconductor substrate, the inside are formed with a semiconductor element; With
A projection is connected with a electrode slice on the Semiconductor substrate;
Wherein, the cylindrical section of described projection and the horizontal component of described projection expose, and the other parts of described projection cover with the protectiveness material.
2. semiconductor device as claimed in claim 1 is characterized in that, the cylindrical section of described projection protrudes outside the protectiveness material.
3. semiconductor device comprises:
A Semiconductor substrate, the inside are formed with a semiconductor element; With
A projection is connected with a electrode slice on the Semiconductor substrate;
Wherein, the cylindrical portion of described projection exposes, and the other parts of described projection cover with the protectiveness material.
4. method of making semiconductor device; be formed with a semiconductor element in the Semiconductor substrate of described semiconductor device; an electrode slice at the bottom of the semiconductor material is connected with a projection; the cylindrical section of projection and the horizontal component of projection expose; the other parts of described projection cover with the protectiveness material, and described method comprises the following steps:
Form after the semiconductor element in Semiconductor substrate, the electrode slice with projection and semiconductor element couples together again;
Apply the protectiveness material of protection semiconductor element;
The protectiveness material is heat-treated.
5. the method for manufacturing semiconductor device as claimed in claim 4 is characterized in that, projection forms with the lead-in wire bonding apparatus.
CN01101509A 2000-01-14 2001-01-13 Semiconductor device and its mfg. method Pending CN1306300A (en)

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