CN1304815C - Micro-displacement measuring system and based on semiconductor laser-charge coupler - Google Patents
Micro-displacement measuring system and based on semiconductor laser-charge coupler Download PDFInfo
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- CN1304815C CN1304815C CNB2005100190721A CN200510019072A CN1304815C CN 1304815 C CN1304815 C CN 1304815C CN B2005100190721 A CNB2005100190721 A CN B2005100190721A CN 200510019072 A CN200510019072 A CN 200510019072A CN 1304815 C CN1304815 C CN 1304815C
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Abstract
The present invention discloses a micro displacement measuring system based on semiconductor laser-charge-coupled device (CCD), which relates to a laser non-contact measuring system with accurate dimension and micrometric displacement. The present invention is composed of a semiconductor laser (LD) A1, an optical device A2, a charge coupling sensor (CCD) B, an LD drive circuit C1, a CCD exciting circuit C2, a signal processing unit D, a time-voltage transformation unit E, a digital collecting and processing unit F and a digital table G. An optical structure of the present invention can be a direct injection type optical structure or a reflection type optical structure. The present invention is non-contact measurement, and is suitable for detecting machining accuracy in a workpiece machining process and the vibration of a large-sized rotary shaft in the process of rotation; the present invention is suitable for the alignment in the process of installation and debugging, and the adjustment of unevenness; the present invention is suitable for monitoring the deformation of reservoir large dams and high buildings, and other measures. The non-contact measurement does not destroy a natural state of a measured object, and can project to measured points where people or appliances can not contact. Thus, measurement results are true, and operation is convenient.
Description
Technical field
The present invention relates to the laser non-contact measuring system of a kind of precise measure and micrometric displacement; Specifically, relate to direct-injection type and reflective optic structure and LD driving circuit, CCD exciting circuit, signal condition unit, time-voltage transformation module.
Background technology
Need precise measure and microdisplacement measurement in modern industry production and the engineering more widely, they may be static, it also may be kinetic measurement, online or offline inspection, accuracy of detection is with all majorities that requires of 1 micron to 10 microns to tens of microns, and more and more require non-cpntact measurement, and higher requirement is proposed the environmental suitability of long-time stability and use.Most typical in the industry is the online detection of maching dimension, and most typical in the engineering application facet is dam deformation monitoring.
At present, utilize semiconductor laser (LD) and charge coupled sensor (CCD) to make the still manque product of this measuring system at home; Its key technical indexes of this type of measuring system is suitable with the present invention in the world, and concrete technical scheme is different, and price is very expensive.
Summary of the invention
The objective of the invention is to measure growing requirement, the micro-displacement measuring system of the based semiconductor laser-charge coupler of a kind of high precision, precise measure is provided in order to satisfy above-mentioned non-contact precision.
The object of the present invention is achieved like this:
One, mentality of designing
1, is used for the semiconductor laser (LD) of precise measure and micrometric displacement non-cpntact measurement and the best fit of charge coupled sensor (CCD) and optical devices and parameter thereof.
2, utilize the advantage of semiconductor laser (LD),, obtain to be close to linear measurement, obtain net result accurately by the simple process of chip by rational optical design.
3, design has and obtains the electronic circuit that high precision high stability is measured, and comprises obtaining, purify and being transformed into the pulse signal circuit of being convenient to digital processing of signal.
4, design has the pattern that adaptation multi-channel measurement and multiple demonstration are worked simultaneously.
Two, design proposal
The present invention is made up of two parts:
The one, comprise the opticator of semiconductor laser (LD) and optical devices A and charge coupled sensor (CCD) B.
The 2nd, comprise exciting circuit C, signal condition cells D, time-circuit part of voltage transformation module E, digital collection processing unit F, digital watch G.
Opticator is set up the relation of itself and measured size or micrometric displacement amount and is converted into corresponding measurement electric signal by CCD, measured size or micrometric displacement information are included in the time-parameters of this measuring-signal, are finished conditioning, conversion, measurement and the processing of signal then by circuit part.
Specifically, as Fig. 1, the present invention by semiconductor laser A1, optical devices A2, charge coupled sensor B, LD driving circuit C1, CCD exciting circuit C2, signal condition cells D, time-voltage transformation module E, digital collection processing unit F, digital watch G form;
Semiconductor laser A1, optical devices A2, charge coupled sensor B, signal condition cells D, time-voltage transformation module E, digital watch G successively photoelectricity connect; Signal condition cells D and digital collection processing unit F are electrically connected; LD driving circuit C1 is connected with semiconductor laser A1; CCD exciting circuit C2 is connected with charge coupled sensor B;
Measurement of the present invention divides direct projection and reflection dual mode, and they are applicable to different application scenarios respectively.
Mainly be design measured object W, semiconductor laser A1, optical devices A2, the mutual matching relationship of charge coupled sensor B.When regulating this kind matching relationship, key is to select the automatic compensation of laser output mode and output power and the parameter of charge coupled sensor B to select, and makes when light signal is arranged, and it is critical saturated that charge coupled sensor B can reach, in than large-temperature range, can obtain output signal-to-noise ratio near best.
Therefore, optical texture of the present invention or be the direct-injection type optical texture, or be the reflective optic structure.
Described direct-injection type optical texture is that semiconductor laser A1, optical devices A2, measured object W and charge coupled sensor B are connected successively;
Described reflective optic structure is that semiconductor laser A1, measured object W, optical devices A2 and charge coupled sensor B are connected successively.
Electronic section of the present invention has following characteristics:
1, utilizes advanced technology, make electronic circuit succinctly effective.Total system is not seen too complicated electronic circuit, but exquisite design is arranged.As:
(a) utilize high-quality analog switch ADG333 in conjunction with ultralow drift amplifier ICL7650 deadline-voltage transformation, obtain the excellent effect of high linearity and high stability.
(b) use high-speed cmos logical device 74HC series, guaranteed accurately to transmit and conversion with measured relevant temporal information.
(c) utilize broadband operational amplifier (LF411) and high-speed comparator (LM339) to finish isolation, level and smooth, binaryzation, adjust simply stable performance.
2,, stable, reliable and guaranteed the accuracy of relevant temporal information based on hardware configuration.
3, be the power supply livitation that anti-phase mutual interference is adopted.
4, measuring-signal is earlier through smoothing processing, carries out electronic fine-grainedly then in voltage table G or digital collection processing unit F, obtains the sub-pixel Measurement Resolution.
The present invention has the following advantages and good effect:
1, because is non-cpntact measurement, be applicable to the detection of machining precision in the workpiece process, the detection that large-scale rotating shaft is swung in rotary course, the aligning of Installation and Debugging process and the adjusting of irregularity degree, the measurements such as monitoring of reservoir dam deformation and skyscraper deformation.Non-cpntact measurement does not destroy the state of nature of measurand and projects the measured point that people or utensil all can't touch because of it, makes measurement result truer, more convenient operation.
2, characteristics such as the accurate dimension of CCD linear array structure, self-scanning, pulse signal output, help applicating modern times technology to signal and measurement result transmit, conversion, storage and processing, for the robotization and the remote-controlled operation of industry provides strong support.
3, the combination of laser and CCD technology, the continuous development of the excellent properties of light source, microminiaturization and CCD technology itself makes the present invention have more development prospect and other potential application foreground.
4, the structure of measuring accuracy of the present invention and ranging scope and various ways has reached the advanced level of external like product, has more in the engineering that special detection requires and the special measurement mechanism of non-commercialization provides various convenient services.
5, the multiple instrument developed of the present invention uses in engineering, obtain user's approval, opened up engineering technical personnel's outlook, made them when finishing required measuring task, prepare to abandon previous traditional measurement pattern, for great scope of land has been opened up in application of the present invention.
After testing, the present invention has following key property index:
1, range: several millimeters-1000mm
2, resolution: 0.001 millimeter or 0.01%FS
3, precision: be better than 0.01 millimeter
4, environment temperature: 0-40 ℃
5, maximum ambient humidity: 100%
6, maximal illumination: 20 luxs
7, temperature drift: 1 micron/1 ℃ 0.02 millimeter/year
Description of drawings
Fig. 1-the present invention forms block scheme;
Fig. 2-direct-injection type index path;
The reflective light path legend one of Fig. 3 .1-;
The reflective light path legend two of Fig. 3 .2-;
The reflective light path legend three of Fig. 3 .3-;
The reflective light path legend four of Fig. 3 .4-;
Fig. 4-LD driving circuit wiring diagram;
Fig. 5-CCD exciting circuit block scheme;
Fig. 6-signal condition unit block scheme;
Fig. 7-time-voltage transformation module block scheme;
Fig. 8-digital collection processing unit block scheme;
Fig. 9-CCD exciting circuit wiring diagram;
Figure 10-signal condition unit connection diagram;
Figure 11-time-voltage transformation module wiring diagram.
Wherein:
A-semiconductor laser (LD) and optical devices, A1-semiconductor laser, A2-optical devices;
B-charge coupled sensor (CCD);
The C-exciting circuit,
The C1-LD driving circuit;
The C2-CCD exciting circuit,
The C2.1-crystal oscillator, C2.2-sequential circuit, C2.3-gate circuit, C2.4-D trigger;
D-signal condition unit, the D1-derivative network, the D2-integrating circuit, the D3-transport and placing device,
The D4-binarization circuit, the D5-threshold regulating circuit, circuit is extracted on the edge before and after the D6-pulse;
E-time-voltage transformation module, E1-analog switch, the E2-integrating circuit of suing for peace, the E3-reference voltage source;
F-digital collection processing unit;
The G-digital watch.
Embodiment
The present invention realizes that the non-contact precision of size and displacement is measured in 0～hundreds of millimeters measurement range, adopted all splendid LD of life-span and optical property.
Difference according to measured object W condition, adopt direct-injection type or reflective measurement, make photo-electric conversion element with sensitivity and all good CCD of dark current performance, by carefully reasonably adjusting the cooperation between LD, optical devices and the CCD, it is critical saturated that the output of CCD is in when receiving signal, basic no-output during no signal.CCD output then utilizes broadband operational amplifier (LF411 etc.) and high-speed comparator to finish every straight, level and smooth, binaryzation, guarantee accurately reflection size or displacement to be measured, and obtain time relationship and size or the strict corresponding square-wave signal of displacement with d type flip flop and analog switch, exempt the influence that receiving light power signal variation etc. brings, obtained the high stability measurement result.Optionally utilizing ultralow drift amplifier ICL7650 to obtain level and smooth direct current output shows for the panel digital watch, or make chronometer time with AT89S52 in conjunction with CCD excitation clock and measure acquisition digital processing and output, the appropriate selection of smoothingtime constant and measurement number of times makes measuring accuracy be improved.
One, opticator
1, semiconductor laser A1, the LD of the 650nm wavelength of select that price is low for use, life-span and optical property are all splendid.
2, charge coupled sensor B selects the TCD of Toshiba product for use.
3, optical devices A2 comprises collimating optics system in the direct-injection type optical texture and the convergence type optical system in the reflective optic structure respectively.Its each optical lens parameter all designs according to different the requirement.
In practical engineering application, because the difference of measuring object, the accuracy requirement of size requires also different with instrument mounting structure.
4, optical texture
(1) direct-injection type optical texture
As Fig. 2, the semiconductor laser A1 of Lian Jieing, optical devices A2, measured object W and charge coupled sensor B are point-blank successively.
Its light path is: the laser beam that is sent by semiconductor laser A1 forms the fabulous directional light of collimation after optical devices A2 optical alignment, direct projection is to whole measured object W, the shade of measured object W and directional light together project on the target surface of charge coupled sensor B (during no measured object W, can be full of whole target surface), position X and the Δ X position and the size that have promptly reflected measured object W of shade on target surface, then the output signal of charge coupled sensor B promptly contains the information of measured object W position and size.In this kind structure, position X and number of terminals word table G data presented are complete linear relationships.
(2) reflective optic structure
In the reflective optic structure, the position of semiconductor laser A1, optical devices A2 and charge coupled sensor B relation can have multiple tab sequencial, and the computing formula of its displacement measurement is also different, has plenty of complete linear relationship, has plenty of nonlinear relationship.There is theoretical formula of deriving to calculate displacement accurately.
1. as Fig. 3 .1, its position is: the laser beam direct projection of semiconductor laser A1 is to measured object W, and optical devices A2 axis and charge coupled sensor B perpendicular bisector overlap, this perpendicular bisector and Laser emission parallel beam.
Its light path is: the laser beam direct projection of being sent by semiconductor laser A1 through the diffuse reflection of measured object W, and focuses on through optical devices A2 to whole measured object W, projects on the target surface of charge coupled sensor B.When tested surface when the Laser emission beam direction moves Δ L, corresponding Δ X also takes place and changes in the position that converges to the luminous point on the target surface of charge coupled sensor B, by following formula Δ X is converted into Δ L again and gets final product:
L＝D×F/X
Wherein:
L-optical devices A2 central point vertical beam of light corresponding point are to the distance between the tested surface;
Distance between D-laser beam and the optical devices A2 optical axis;
F-optical devices A2 equivalent face is to the distance between the charge coupled sensor B target surface;
The corresponding optical devices A2 of X-charge coupled sensor B target surface melatope is to the distance of signal luminous point.
2. as Fig. 3 .2, its position is: the laser beam direct projection of semiconductor laser A1 is to measured object W, and the perpendicular bisector of optical devices A2 and charge coupled sensor B overlaps, on the illuminated with laser light point when aligning measured object W is in the range centre position.
Its light path is: the laser beam direct projection of being sent by semiconductor laser A1 through measured object W diffuse reflection, is imaged onto it on target surface of charge coupled sensor B through optical devices A2 again to measured object W.When tested surface along the upper and lower mobile Δ L of Laser emission beam direction
On, Δ L
DownThe time, corresponding X also takes place in the position that converges to the luminous point on the target surface of charge coupled sensor B
On, X
DownChange, press following formula again X
On, X
DownBe converted into Δ L
On, Δ L
DownGet final product:
Δ L
On=(L
2+ D
2) L
On/ (F * D+LX
On)
Δ L
Down=(L
2+ D
2) L
Down/ (F * D+LX
Down)
3. as Fig. 3 .3, for obtaining the voltage signal relation in direct ratio of measured object W displacement and charge coupled sensor B output, optical devices A2 position lay .3 as Fig. 3, the laser beam direct projection that is semiconductor laser A1 is to measured object W, on the illuminated with laser light point when the axis alignment measured object W of optical devices A2 is in the range centre position; When charge coupled sensor B is parallel to the Laser emission light beam and is placed on the centre position of measured object W place range ability on the formed image position.
Its position calculation formula is:
Lx＝E×(h-X)/F
Wherein:
E＝(D
2+L
2)
1/2
4. as Fig. 3 .4, this kind structure is used for measuring the situation of level change amount more.Laser beam incides on the liquid level with the incident angle of α, and charge coupled sensor B target surface is aimed at laser-bounce light.When tested liquid level changes up and down, reflected light shines the variation of the position generation equal proportion on the charge coupled sensor B target surface, measure the light spot position variable quantity on the charge coupled sensor B target surface, can calculate the variable quantity of liquid surface lifting, its computing formula is:
Δh＝X/2×sinα
Two, circuit part
1, exciting circuit C comprises LD driving circuit C1 and CCD exciting circuit C2;
(1) LD driving circuit C1
As Fig. 4, LD driving circuit C1 is: the base stage of transistor BG2 is connected with stabilivolt BG1, resistance R respectively; The collector of transistor BG2 is connected with stabilivolt BG1 with thermistor Rt respectively, and thermistor Rt is connected with potentiometer W again; The emitter of transistor BG2 is connected with semiconductor laser LD.
LD driving circuit C1 is a constant current source.For guaranteeing that the laser output power of operating ambient temperature in 0-40 ℃ remains unchanged substantially, the spy seals in thermistor Rt in circuit, make LD that constant output be arranged when variation of ambient temperature, guarantees measuring accuracy.
(2) CCD exciting circuit C2
As Fig. 5, CCD exciting circuit C2 is made up of crystal oscillator C2.1, sequential circuit C2.2, gate circuit C2.3, d type flip flop C2.4; Crystal oscillator C2.1 is connected with sequential circuit C2.2, and sequential circuit C2.2 is connected with charge coupled sensor B by gate circuit C2.3, d type flip flop C2.4 respectively.
As Fig. 9,, must import the pumping signal RS (reset gate) that the strict sequential order relation is arranged, SH (shift gate), Φ 1, Φ 2 (clock) for making charge coupled sensor B operate as normal; Produce the concussion pulse of high stable by crystal oscillator C2.1, produce four road pulsating waves that the strict sequential order relation is arranged by charge coupled sensor B requirement via 74HC4017 (in conjunction with 74HC04), wherein two-way obtains CLK (system clock) and RS (reset gate) signal by gate circuit (74HC00), and in addition two-way obtains SH (shift gate) and Φ 1, Φ 2 (clock) signal by d type flip flop C2.4; Have the signal of strict sequential order relation to remove to drive charge coupled sensor B with above-mentioned, CCD just can be able to operate as normal.Because this circuit all is made up of hardware, so succinct reliable, operating rate is high.
2, signal condition cells D
As Fig. 6, the signal condition cells D is by forming along extracting circuit D6 before and after derivative network D1, integrating circuit D2, operational amplifier D3, binarization circuit D4, threshold regulating circuit D5, the pulse; Connect successively along extracting circuit D6 before and after derivative network D1, operational amplifier D3, binarization circuit D4, the pulse; Integrating circuit D2 is in parallel with operational amplifier D3; Threshold regulating circuit D5 is connected with binarization circuit D4.
As Figure 10, ccd output signal is delivered to the prime amplifier of being made up of LF411, prime amplifier has intercepted the direct current composition by the RC coupled circuit, to reduce drift, again through level and smooth, amplification, to remove part high frequency interference and signal along shake, obtain output signal clean, stable and that amplified, it is sent into the binarization circuit that LM319 forms, this circuit connects threshold regulating circuit D5, level on request carries out binary conversion treatment, thus the very precipitous square-wave signal in edge before and after obtaining exporting.This signal is delivered to 74HC74, and works together in conjunction with the SH signal, obtain pulsewidth respectively with signal pulse before and after along corresponding two tunnel square-wave signal T1, T2.
3, time-voltage transformation module E
As Fig. 7, time-voltage transformation module E is made up of analog switch E1, summation integrating circuit E2, reference voltage source E3; Analog switch E1, summation integrating circuit E2 are connected, and reference voltage source E3 is connected with analog switch E1, summation integrating circuit E2 respectively.
As Figure 11, two-way square-wave signal T1, T2 by the output of signal condition cells D are admitted to analog switch E1, reference voltage source E3 provides the reference voltage of high stable for analog switch E1, make T1, the T2 of input pass through the two-way square-wave signal that obtains amplitude stabilization after analog switch E1 handles, make it by the integrating circuit E2 that sues for peace again, will obtain aanalogvoltage output after summation of two signals and the Integral Processing.W1 is an aanalogvoltage export ratio regulator potentiometer in the circuit, and W2 is an aanalogvoltage output regulator potentiometer at zero point.
4, digital collection processing unit F
As Fig. 8, the system that digital collection processing unit F is made up of the AT89S52 microprocessor.
Pulse signal T1, T2 that two-way contains metrical information deliver to digital collection processing unit F, finish the measurement of the pulse signal that contains micrometric displacement information by it, and measurement result is made filtering, average treatment.Digital collection processing unit F has the RS232 interface, can communicate by letter with PC and be connected to measure controller (MCU, external equipment) and finish that setting, control, the data of system are read etc.Digital collection processing unit F possesses the common characteristic in the engineering survey, repeats no more herein.
5, digital watch G
Digital watch G selected range is the four and half digital D.C. voltmeters of 2V.From time-the aanalogvoltage output of voltage transformation module E directly delivers on four half word table G, by two potentiometers of W1, W2 among adjusting time-voltage transformation module E, but zero point of Adjustment System and demarcate scale value.This digital watch G adopts power supply to float, and has strengthened common mode inhibition capacity, has eliminated the phase mutual interference of hyperchannel and each signal effectively, thereby obtains the measurement output result of high precision, high stability.
Claims (10)
1, a kind of micro-displacement measuring system of based semiconductor laser-charge-coupled image sensor comprises semiconductor laser (A1), optical devices (A2), charge coupled sensor (B), digital collection processor (F), digital watch (G);
It is characterized in that: native system is made up of semiconductor laser (A1), optical devices (A2), charge coupled sensor (B), LD driving circuit (C1), CCD exciting circuit (C2), signal condition unit (D), time-voltage transformation module (E), digital collection processing unit (F), digital watch (G);
Semiconductor laser (A1), optical devices (A2), charge coupled sensor (B), signal condition unit (D), time-voltage transformation module (E), digital watch (G) photoelectricity successively connect; Signal condition unit (D) and digital collection processing unit (F) are electrically connected; LD driving circuit (C1) is connected with semiconductor laser (A1); CCD exciting circuit (C2) is connected with charge coupled sensor (B);
Optical texture or be the direct-injection type optical texture, or be the reflective optic structure;
Described direct-injection type optical texture is that semiconductor laser (A1), optical devices (A2), measured object (W) and charge coupled sensor (B) are connected successively;
Described reflective optic structure is that semiconductor laser (A1), measured object (W), optical devices (A2) and charge coupled sensor (B) are connected successively.
2, by the described micro-displacement measuring system of claim 1, it is characterized in that the direct-injection type optical texture:
The semiconductor laser of Lian Jieing (A1), optical devices (A2), measured object (W) and charge coupled sensor (B) are point-blank successively.
3, by the described micro-displacement measuring system of claim 1, it is characterized in that the reflective optic structure:
The laser beam direct projection of semiconductor laser (A1) is to measured object (W), and optical devices (A2) axis and charge coupled sensor (B) perpendicular bisector overlap, this perpendicular bisector and Laser emission parallel beam.
4, by the described micro-displacement measuring system of claim 1, it is characterized in that the reflective optic structure:
The laser beam direct projection of semiconductor laser (A1) is to measured object (W), and the perpendicular bisector of optical devices (A2) and charge coupled sensor (B) overlaps, on the illuminated with laser light point when aligning measured object (W) is in the range centre position.
5, by the described micro-displacement measuring system of claim 1, it is characterized in that the reflective optic structure:
The laser beam direct projection of semiconductor laser (A1) is to measured object (W), on the illuminated with laser light point when the axis alignment measured object (W) of optical devices (A2) is in the range centre position; Charge coupled sensor (B) is parallel to the Laser emission light beam and is placed on measured object (W) when locating the centre position of range ability on the formed image position.
6, by the described micro-displacement measuring system of claim 1, it is characterized in that the reflective optic structure:
The laser beam of semiconductor laser (A1) incides on the liquid level with the incident angle of α, and charge coupled sensor (B) target surface is aimed at laser-bounce light.
7, by the described micro-displacement measuring system of claim 1, it is characterized in that:
LD driving circuit (C1) is: the base stage of transistor (BG2) is connected with stabilivolt (BG1), resistance (R) respectively; The collector of transistor (BG2) is connected with stabilivolt (BG1) with thermistor (Rt) respectively, and thermistor (Rt) is connected with potentiometer (W) again; The emitter of transistor (BG2) is connected with semiconductor laser (A1).
8, by the described micro-displacement measuring system of claim 1, it is characterized in that:
CCD exciting circuit (C2) is made up of crystal oscillator (C2.1), sequential circuit (C2.2), gate circuit (C2.3), d type flip flop (C2.4); Crystal oscillator (C2.1) is connected with sequential circuit (C2.2), and sequential circuit (C2.2) is connected with charge coupled sensor (B) by gate circuit (C2.3), d type flip flop (C2.4) respectively.
9, by the described micro-displacement measuring system of claim 1, it is characterized in that:
Signal condition unit (D) is by forming along extracting circuit (D6) before and after derivative network (D1), integrating circuit (D2), operational amplifier (D3), binarization circuit (D4), threshold regulating circuit (D5), the pulse; Connect successively along extracting circuit (D6) before and after derivative network (D1), operational amplifier (D3), binarization circuit (D4), the pulse; Integrating circuit (D2) is in parallel with operational amplifier (D3); Threshold regulating circuit (D5) is connected with binarization circuit (D4).
10, by the described micro-displacement measuring system of claim 1, it is characterized in that:
Time-voltage transformation module (E) is made up of analog switch (E1), summation integrating circuit (E2), reference voltage source (E3); Analog switch (E1), summation integrating circuit (E2) are connected, and reference voltage source (E3) is connected with analog switch (E1), summation integrating circuit (E2) respectively.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100585328C (en) * | 2008-02-22 | 2010-01-27 | 济南大学 | Laser image and corresponding pixel distance measurement based displacement measuring device and method |
| CN106123787B (en) * | 2016-08-30 | 2019-05-28 | 宁波舜宇智能科技有限公司 | The control system and method for laser displacement sensor |
| CN106441110A (en) * | 2016-09-23 | 2017-02-22 | 西安电子科技大学 | High precision laser displacement sensor system based on CMOS |
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| CN2599525Y (en) * | 2003-02-14 | 2004-01-14 | 中国科学院上海光学精密机械研究所 | Micro-displacement real-time interferometer |
| CN1632450A (en) * | 2005-01-10 | 2005-06-29 | 中国科学院上海光学精密机械研究所 | X-ray speckle device and application thereof in micro-displacement measurement |
| CN1632452A (en) * | 2004-12-23 | 2005-06-29 | 西安华腾光电有限责任公司 | High precision photoelectric measuring method and measuring apparatus for three-dimensional dip |
| CN2807198Y (en) * | 2005-07-12 | 2006-08-16 | 陈昌浩 | Micro-displacement measurer based on semiconductor laser-electric charge coupling device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2599525Y (en) * | 2003-02-14 | 2004-01-14 | 中国科学院上海光学精密机械研究所 | Micro-displacement real-time interferometer |
| CN1632452A (en) * | 2004-12-23 | 2005-06-29 | 西安华腾光电有限责任公司 | High precision photoelectric measuring method and measuring apparatus for three-dimensional dip |
| CN1632450A (en) * | 2005-01-10 | 2005-06-29 | 中国科学院上海光学精密机械研究所 | X-ray speckle device and application thereof in micro-displacement measurement |
| CN2807198Y (en) * | 2005-07-12 | 2006-08-16 | 陈昌浩 | Micro-displacement measurer based on semiconductor laser-electric charge coupling device |
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