CN1297145A - Integrated vacuum microelectronic tactile sensor array - Google Patents
Integrated vacuum microelectronic tactile sensor array Download PDFInfo
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- CN1297145A CN1297145A CN 99124606 CN99124606A CN1297145A CN 1297145 A CN1297145 A CN 1297145A CN 99124606 CN99124606 CN 99124606 CN 99124606 A CN99124606 A CN 99124606A CN 1297145 A CN1297145 A CN 1297145A
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Abstract
An integrated vacuum microelectronic tactile sensor array for measuring multi-point micropressure and microshift and sensing the image of object is composed of the 2D array of vacuum microelectronic tactile sensing cells and the signal processing circuit. Said tactile sensing cell consists of microfield emission silicon cathode cone-tip array, vacuum microcavity, insulating layer and elastic anode membrane. Said signal processing circuit is composed of horizontal and vertical scan circuits, MOS switch transistor array and signal output. Its advantages are high temp stability, sensitivity, resolution and response speed, low power, radiation resistance and small size.
Description
The invention belongs to minute-pressure power and micro-displacement sensor technical field, particularly relate to a kind of integrated vacuum microelectronic tactile sensor array.
Vacuum microelectronic tactile sensor of the prior art, the present bibliographical information of only seeing the single hose vacuum microelectronic tactile sensor.As the disclosed step array cathode vacuum microelectronic pressure sensor of Chinese invention patent application, publication number CN1144333A.This invention mainly changes step array cathode vacuum microelectronic pressure sensor into by the structure with the planar array cathode vacuum microelectronic pressure sensor.Though such technical scheme has improved the sensitivity and the range of sensor, it only is a kind of vacuum micropressure sensor of single hose, can not accurately measure the corresponding pattern of multiple spot micrometric displacement, minute-pressure power and perception measured object simultaneously.
The purpose of this invention is to provide that a kind of temperature stability is good, radioresistance, response speed are fast, sensitivity and resolution height, integrated vacuum microelectronic tactile sensor array that volume is little.
The present invention comes to be realized by the following technical programs:
Integrated vacuum microelectronic tactile sensor array is made up of microelectronic vacuum tactile sensing unit two-dimensional array, signal processing circuit two large divisions.Wherein, the tactile sensing unit that constitutes microelectronic vacuum tactile sensing unit two-dimensional array bores sharp array (1), vacuum micro chamber (2), insulation course (3), anode elastic membrane (4) by the little field-emissive cathode of silicon and forms, and the anode elastic membrane (4) of each tactile sensing unit is integrated with the signal processing circuit integrated three-dimensional after isolation strip (5) are isolated into separate unit; Signal processing circuit is made up of horizontal direction sweep circuit (6), vertical scan direction circuit (7), MOS switching tube array (8) and (8 '), signal output part (9).The switching tube that MOS switching tube array (8) is gone up respective column is opened in the signal output of horizontal direction sweep circuit (6), and the switching tube that MOS switching tube array (8 ') is gone up corresponding line is opened in the output of the signal of vertical scan direction circuit (7), and the haptic signal of taking-up is sent by signal output part (9).
Major technique feature of the present invention is, with the little field-emissive cathode of silicon bore sharp array (1), vacuum micro chamber (2), insulation course (3), (5) are isolated into separate unit to anode elastic membrane (4) through the isolation strip, microelectronic vacuum tactile sensing unit and signal processing circuit be simultaneously integrated to go out vacuum microelectronic tactile sensor array.
Below in conjunction with accompanying drawing technical scheme of the present invention is described further.
Accompanying drawing 1 is an integrated vacuum microelectronic tactile sensing unit synoptic diagram.In accompanying drawing 1,1 bores sharp array for the little field-emissive cathode of silicon, and 2 is vacuum micro chamber, and 3 is insulation course, and 4 is the anode elastic membrane.
Accompanying drawing 3 is an integrated vacuum microelectronic tactile sensor array plane distribution synoptic diagram.In accompanying drawing 3,6 is the horizontal direction sweep circuit, and 7 is the vertical scan direction circuit, and 5 is the isolation strip of tactile sensing unit, and 9 is signal output part, 8 and 8 ' be MOS switching tube array.
Accompanying drawing 4 is the signal processing circuit principle schematic.In accompanying drawing 4, V
sBe initial pulse voltage, φ
1, φ
2Be clock signal, e
1, e
2, e
N-1, e
NBe the output point by turn of signal processing circuit, EOS is surplus bit register output.
The principle of work of tactile sensing unit is, the relative little field-emissive cathode of silicon of anode elastic membrane (4) is bored sharp array (1) and is applied certain positive voltage (initial emission voltage), form accelerating field on negative electrode awl point surface, cause field emission, at negative electrode, form electric current (initial transmitter current) between the anode, when voltage one timing, anode elastic membrane (4) stress deformation, negative electrode, distance between the anode changes, surperficial also corresponding the changing of field intensity of negative electrode awl point this moment, thereby cause negative electrode, current density between the anode changes with field intensity, and this variation is quite responsive.Because ejected electron is to transport in a vacuum, the influence of factors such as temperature can be ignored in theory, thereby the microelectronic vacuum tactile sensing unit of this structure has highly sensitively, and temperature stability is good, advantages such as the fast and radioresistance of response speed.
Integrated vacuum microelectronic tactile sensor array provided by the invention, the microelectronic vacuum tactile sensing unit more than four that will have These characteristics just with the arrangement mode of two-dimensional array and signal processing circuit simultaneously integrated three-dimensional be integrated on the same chip, its plane distribution is as shown in Figure 3.The anode elastic membrane (4) of each integrated tactile sensing unit links to each other with the respective switch pipe drain electrode of corresponding MOS switching tube array (8), the shift register of horizontal direction sweep circuit (6) output line by turn is connected on the switching tube grid of corresponding M OS switching tube array (8) successively, and the respective switch pipe source electrode of switching tube array (8) then links to each other with every capable horizontal output line respectively; The shift register of vertical scan direction circuit (7) output line by turn is connected on the grid of corresponding MOS switching tube array (8 ') successively.The horizontal output line then is connected on the respective switch pipe source electrode of corresponding (8 '), and the drain electrode of the respective switch pipe of MOS switching tube array (8 ') is connected on the signal output part (9) of tactile sensing unit two-dimensional array.Through corresponding clock and the periodically control of initial pulse signal, open MOS switching tube array (8) and (8 ') of relevant position by turn, thereby realization obtaining successively with serial of scanner uni tactile sensing unit each cell signal of two-dimensional array line by line exported.Because the signal processing circuit that this programme is made is a kind of radiation-resistant low consumption circuit, thereby its power consumption has nothing to do with figure place.
The manufacture craft of brief description integrated vacuum microelectronic tactile sensor array, its manufacture craft mainly comprises two parts: the making that at first is microelectronic vacuum tactile sensing unit two-dimensional array, be the processing of signal processing circuit then, specifically describe as follows: A: the making of two-dimentional microelectronic vacuum tactile sensing element array:
(1) n type＜100 of pre-service 2-8 Ω .cm〉monocrystalline silicon piece;
(2) SiO of thermal oxide growth 1.5 μ m
2
(3) negative electrode of photoetching tactile sensing unit two-dimensional array is bored sharp array;
(4) caustic solution that adopts dry method and wet method to combine, the corrosion negative electrode is bored sharp array;
(5) anticathode is bored sharp array and is carried out the oxidation sharpening and handle, and finishes the making of negative electrode awl point;
(6) back side photoetching is about to the photoetching alignment mark and transfers to the back side, so that shift to the front;
(7) with n type＜100 about resistivity 2 Ω .cm〉the twin polishing silicon chip is as the anode film of tactile sensing unit, forms the wafer bonding that negative electrode is bored sharp array with oneself;
(8) with the anode film wafer thinning on the bonding, polishing forms the silicon fiml about 20 μ m;
(9) SiO of heat growth 1 μ m
2
(10) photoetching, anisotropic etch anode film isolation strip;
(11) thermal oxide 100nmSiO
2
(12) LPCVD deposit polysilicon is filled and led up the isolation strip;
(13) flattening surface is handled, and removes the polysilicon except that the isolation strip.B, finish the making of signal processing circuit with conventional MOS technology.
It is good that the present invention has temperature stability, sensitivity and resolution ratio height, fast response time, low in energy consumption, The advantage such as radioresistance, volume are little. It both can measure multiple spot micro-pressure and micrometric displacement, but perception is tested again The corresponding pattern of object is very widely integrated vacuum microelectronic tactile sensor battle array of a kind of purposes Row.
Claims (3)
1, integrated vacuum microelectronic tactile sensor array, comprise microelectronic vacuum tactile sensing unit two-dimensional array, signal processing circuit two parts, wherein, the tactile sensing unit that constitutes tactile sensing unit two-dimensional array bores sharp array (1) by the little field-emissive cathode of silicon, vacuum micro chamber (2), insulation course (3), anode elastic membrane (4) is formed, signal processing circuit is by horizontal direction sweep circuit (6), vertical scan direction circuit (7), MOS switching tube array (8) and (8 '), signal output part (9) is formed, and it is characterized in that the tactile sensing unit's two-dimensional array and the common integrated vacuum microelectronic tactile sensor array of signal processing circuit that constitute.
2, by the described integrated vacuum microelectronic tactile sensor array of claim 1, it is characterized in that vacuum microelectronic tactile sensor array is integrated with two-dimensional approach, the anode elastic membrane (4) of each tactile sensing unit is integrated with the signal processing circuit integrated three-dimensional after isolation strip (5) are isolated into separate unit.
3, by the described integrated vacuum microelectronic tactile sensor array of claim 1, the switching tube that MOS switching tube array (8) is gone up respective column is opened in the signal output that it is characterized in that horizontal direction sweep circuit (6), and the switching tube that MOS switching tube array (8 ') is gone up corresponding line is opened in the output of the signal of vertical scan direction circuit (7), and the haptic signal of taking-up is sent by signal output part (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99124606 CN1297145A (en) | 1999-11-18 | 1999-11-18 | Integrated vacuum microelectronic tactile sensor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99124606 CN1297145A (en) | 1999-11-18 | 1999-11-18 | Integrated vacuum microelectronic tactile sensor array |
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| CN1297145A true CN1297145A (en) | 2001-05-30 |
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| CN 99124606 Pending CN1297145A (en) | 1999-11-18 | 1999-11-18 | Integrated vacuum microelectronic tactile sensor array |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544900B (en) * | 2003-11-17 | 2012-07-18 | 南京航空航天大学 | Three-dimensional micro load force measuring array system |
| CN104142207A (en) * | 2014-08-05 | 2014-11-12 | 温州大学 | Vacuum gauge based on gas absorption and carbon nano-tube field emission principle and vacuum degree detection method of vacuum gauge |
| CN107748274A (en) * | 2017-09-30 | 2018-03-02 | 中国船舶重工集团公司第七0七研究所 | The method detected by servo circuit frequency sweep to accelerometer internal vacuum |
| CN111578969A (en) * | 2020-04-11 | 2020-08-25 | 复旦大学 | Flexible skin stimulator |
-
1999
- 1999-11-18 CN CN 99124606 patent/CN1297145A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544900B (en) * | 2003-11-17 | 2012-07-18 | 南京航空航天大学 | Three-dimensional micro load force measuring array system |
| CN104142207A (en) * | 2014-08-05 | 2014-11-12 | 温州大学 | Vacuum gauge based on gas absorption and carbon nano-tube field emission principle and vacuum degree detection method of vacuum gauge |
| CN107748274A (en) * | 2017-09-30 | 2018-03-02 | 中国船舶重工集团公司第七0七研究所 | The method detected by servo circuit frequency sweep to accelerometer internal vacuum |
| CN111578969A (en) * | 2020-04-11 | 2020-08-25 | 复旦大学 | Flexible skin stimulator |
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