CN1278390C - Method and apparatus for wafer drying - Google Patents

Method and apparatus for wafer drying Download PDF

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Publication number
CN1278390C
CN1278390C CN 03115530 CN03115530A CN1278390C CN 1278390 C CN1278390 C CN 1278390C CN 03115530 CN03115530 CN 03115530 CN 03115530 A CN03115530 A CN 03115530A CN 1278390 C CN1278390 C CN 1278390C
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China
Prior art keywords
wafer
wafers
inclination angle
bearing portion
crystal chip
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Expired - Fee Related
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CN 03115530
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Chinese (zh)
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CN1525535A (en
Inventor
林德成
刘玉仙
马赛罗德拉皮埃
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Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN 03115530 priority Critical patent/CN1278390C/en
Publication of CN1525535A publication Critical patent/CN1525535A/en
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Publication of CN1278390C publication Critical patent/CN1278390C/en
Anticipated expiration legal-status Critical
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Abstract

The present invention relates to a method and a device for drying a wafer. In a wafer processing box, a plurality of wafers are vertically loaded on a crystal plate loading device which is provided with a plurality of grooves; the wafers are cleaned by deionized water (DIW); nitrogen containing isopropyl alcohol (IPA) vapor is conveyed into the wafer processing box to remove the moisture on the wafers and the interior surface of the wafer processing box; after the nitrogen containing IPA vapor is conveyed into the wafer processing box for a period of time, the heated nitrogen is conveyed into the wafer processing box to evaporate the IPA and dry the wafers; the nitrogen containing the IPA is exhausted out of the wafer processing box; the wafers are moved out of the wafer processing box to carry out other post-treatment of the wafers, wherein the wafer has a micro inclination angle corresponding to the vertical direction.

Description

Wafer drying method and device
Technical field
The present invention is about a kind of wafer drying method and device, and wafer wherein to be dried has a little inclination angle with respect to vertical direction.
Background technology
In the manufacture process of wafer, generally with deionized water (DIW) clean wafers.After with the washed with de-ionized water wafer, generally wafer surface moisture content is dehydrated with isopropyl alcohol (IPA).In known IPA drier 10, as shown in Figure 1, moist wafer 12 is transferred in the IPA steam chamber.IPA is with nitrogen (N 2) as transport gas, import in the vapour seasoning chamber 15, by bottom heater 11 IPA is heated and is evaporated to steam to be filled in this vapour seasoning chamber 15.By this, the high volatile volatile of IPA can be avoided washmarking with wafer surface moisture content dehydration, the adhering on the wafer surface of particulate and metal impurities.But in this known technology, being carried on that wafer carries in part wafers 12 in the device 14 carry device 14 because of the wafer that submerges the groove can't bone dry, so partly forms remarkable influence for spendable wafer.
In another known technology, as shown in Figure 2, it is a Marangoni drier 20, and it utilizes IPA and deionized water capillary different, wafer 21 remained on surface is got the moisture content absorption flow back to tank, to dehydrate.In the Marangoni drier, after cleaning finishes, wafer is slowly pulled out in deionized water (among the figure from a position to the b position), as transport gas IPA24 is blowed to moist wafer with nitrogen 23, because the IPA concentration of wafer surface is greater than deionized water concentration, so surface tension reduces, so the sucked back tank of hydrone.But in this known technology, even utilize surface tension poor, the wafer that is carried in the groove that wafer carries device partly also is difficult to dewater fully.
Generally speaking, the washmarking of wafer is restricted to from Waffer edge 1.5mm, and when making wafer, gets rid of usually and use Waffer edge 3 to 5mm.But if desire enlarges when using wafer, because known technology can't make the washmarking drying of Waffer edge fully, therefore using wafer for expansion is to form a bottleneck.
Summary of the invention
Because the shortcoming of above-mentioned known technology, that is can't make Waffer edge be carried on the part drying that wafer carries the device place fully, the present invention discloses a kind of wafer drying method and device, and wherein Waffer edge is carried on the part that wafer carries device groove place and can obtains intensive drying.
In order to reach above-mentioned purpose, the present invention discloses a kind of wafer drying method, comprises: in a processing of wafers case, a plurality of crystal chip bearings are carried on the device in the wafer with a plurality of crystal chip bearing portion, described crystal chip bearing portion is channel shaped; With deionized water (DIW) clean wafers; The nitrogen that transmission contains isopropyl alcohol (IPA) steam to the processing of wafers case to remove on wafer and at the moisture content on the inner surface of processing of wafers case; The nitrogen that contains the IPA steam in transmission to processing of wafers case a period of time, transmit heated nitrogen to the processing of wafers case with evaporation IPA with make the wafer drying; The nitrogen that will contain IPA is discharged the processing of wafers case; With wafer is shifted out from treatment box to carry out other subsequent treatment of wafer, wherein this crystal chip bearing portion of channel shaped has a little inclination angle with respect to vertical direction, thereby makes wafer have a little inclination angle with respect to vertical direction.
In another viewpoint of the present invention, the invention provides a kind of wafer drying device, comprise: a processing of wafers case, wherein hold a wafer and carry device, this wafer carries has a plurality of crystal chip bearing portion on the device, carrying a plurality of wafers, described crystal chip bearing portion is channel shaped, this crystal chip bearing portion of channel shaped has a little inclination angle with respect to vertical direction, thereby makes wafer have a little inclination angle with respect to vertical direction; One steam generator, it is arranged on the treatment box top, contains the nitrogen of IPA steam in order to generation; One tube connector, it is connected between steam generator and treatment box, to transmit the steam produced to treatment box; With a delivery pipe, it is arranged on the treatment box bottom, with the discharging steam.
The present invention also provides wafer to carry device, be used for bearing wafer, described wafer carries utensil a plurality of crystal chip bearing portion, and described crystal chip bearing portion is channel shaped, this crystal chip bearing portion of channel shaped has a little inclination angle with respect to vertical direction, thereby makes wafer have a little inclination angle with respect to vertical direction.
Follow the description of accompanying drawing by following explanation, preferred embodiment wherein of the present invention shows with illustrative examples, can more understand above and other objects of the present invention, feature and advantage.
Description of drawings
Fig. 1 is the schematic diagram of known IPA drier;
Fig. 2 is the schematic diagram of known Marangoni drier;
Fig. 3 is the schematic diagram of wafer drier of the present invention;
Fig. 4 carries the enlarged diagram of device for the wafer of wafer drier of the present invention; With
Fig. 5 carries the enlarged diagram of device for another wafer of wafer drier of the present invention.
Embodiment
Below with reference to Fig. 3 to 5 explanation embodiments of the invention.
As shown in Figure 3, in wafer drying device 1 of the present invention, comprise a processing of wafers case 2, wherein hold a wafer and carry device 3, this wafer carries has a plurality of grooves 4 (seeing Fig. 4 or 5) to carry a plurality of wafers 5 on the device 3; One steam generator 6, it is arranged on treatment box 2 tops, contains the nitrogen of IPA steam in order to generation; One heater 7 contains the nitrogen of IPA in order to heating; One tube connector 8, it is connected 2 of steam generator 6 and treatment boxes, to transmit the steam that produced to treatment box 2; With a delivery pipe 9, it is arranged on treatment box 2 bottoms, with the discharging steam.
Next illustrates method of the present invention.
In a processing of wafers case 2, the wafer that a plurality of wafer 5 vertical being carried on are had a plurality of grooves 4 carries on the device 3, then with deionized water (DIW) clean wafers.Then, transmit contain isopropyl alcohol (IPA) steam nitrogen to processing of wafers case 2, to remove on wafer 5 and at the moisture content on processing of wafers case 2 inner surfaces.The nitrogen that contains the IPA steam in transmission is to processing of wafers case after 2 a period of times, transmit heated nitrogen to the processing of wafers case 2 with evaporation IPA with make wafer 5 dryings.Then, the nitrogen that will contain IPA is discharged outside the processing of wafers case 2 via delivery pipe 9.After finishing above-mentioned steps, wafer 5 is shifted out from treatment box 2, to carry out other subsequent treatment of wafer.
In said method of the present invention and device, as shown in Figure 3, this wafer 5 has a little inclination angle with respect to vertical direction (as shown by arrow A).
In one embodiment of this invention, the crystal chip bearing portion 31 that this wafer carries device 3 has a little inclination alpha, has a little inclination alpha so that be carried on the wafer 5 that wafer carries on the device 3 with respect to the vertical direction that wafer carries device.
In another embodiment of the present invention, the bottom front that this wafer carries device 3 is provided with a pad 32, provides this wafer required little inclination alpha so that wafer carries device 3.
Preferable, this little inclination alpha is about 3 to 5 degree.
The present invention is by providing wafer with respect to vertical direction one little inclination angle, and the edge of the wafer in the groove that submerges can obtain dry more fully, and therefore the use for Waffer edge can provide greatest benefiting.
The present invention is not limited to the foregoing description, and still can reach various changes and modification in this, but it still belongs to spirit of the present invention and category.Therefore, spirit of the present invention and category should be defined by following claims.

Claims (6)

1. wafer drying method comprises:
In a processing of wafers case, a plurality of crystal chip bearings to be carried on the device in the wafer with a plurality of crystal chip bearing portion, described crystal chip bearing portion is channel shaped;
With the washed with de-ionized water wafer;
The nitrogen that transmission contains methanol vapor to the processing of wafers case to remove on wafer and at the moisture content on the inner surface of processing of wafers case;
The nitrogen that contains methanol vapor in transmission to processing of wafers case a period of time, transmit heated nitrogen to the processing of wafers case with the evaporation isopropyl alcohol with make the wafer drying;
The nitrogen that will contain isopropyl alcohol is discharged the processing of wafers case; With
Wafer is shifted out from treatment box carrying out other subsequent treatment of wafer,
Wherein this crystal chip bearing portion of channel shaped has a little inclination angle with respect to vertical direction, thereby makes wafer have a little inclination angle with respect to vertical direction.
2, wafer drying method as claimed in claim 1 is characterized in that, this little inclination angle is 3 to 5 degree.
3. wafer drying device comprises:
One processing of wafers case, wherein hold a wafer and carry device, this wafer carries has a plurality of crystal chip bearing portion on the device, to carry a plurality of wafers, described crystal chip bearing portion is channel shaped, this crystal chip bearing portion of channel shaped has a little inclination angle with respect to vertical direction, thereby makes wafer have a little inclination angle with respect to vertical direction;
One steam generator, it is arranged on the treatment box top, contains the nitrogen of methanol vapor in order to generation;
One tube connector, it is connected between steam generator and treatment box, to transmit the steam produced to treatment box; With
One delivery pipe, it is arranged on the treatment box bottom, with the discharging steam.
4, wafer drying device as claimed in claim 3 is characterized in that, this little inclination angle is 3 to 5 degree.
5. a wafer carries device, is used for bearing wafer, it is characterized in that, has a plurality of crystal chip bearing portion, described crystal chip bearing portion is channel shaped, and this crystal chip bearing portion of channel shaped has a little inclination angle with respect to vertical direction, thereby makes wafer have a little inclination angle with respect to vertical direction.
6, wafer as claimed in claim 5 carries device, it is characterized in that, this little inclination angle is 3 to 5 degree.
CN 03115530 2003-02-26 2003-02-26 Method and apparatus for wafer drying Expired - Fee Related CN1278390C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 03115530 CN1278390C (en) 2003-02-26 2003-02-26 Method and apparatus for wafer drying

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 03115530 CN1278390C (en) 2003-02-26 2003-02-26 Method and apparatus for wafer drying

Publications (2)

Publication Number Publication Date
CN1525535A CN1525535A (en) 2004-09-01
CN1278390C true CN1278390C (en) 2006-10-04

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CN 03115530 Expired - Fee Related CN1278390C (en) 2003-02-26 2003-02-26 Method and apparatus for wafer drying

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100383912C (en) * 2005-01-11 2008-04-23 中芯国际集成电路制造(上海)有限公司 High temperature wafer test oven
CN101210769B (en) * 2006-12-25 2010-04-07 中芯国际集成电路制造(上海)有限公司 Method and device for drying wafer
CN101245968B (en) * 2007-02-13 2010-05-26 中芯国际集成电路制造(上海)有限公司 Method for removing water in quartz sheath equipped with thermocouple
WO2009001379A1 (en) * 2007-06-26 2008-12-31 Afco C.V. Drying apparatus and method for silicon-based electronic circuits
CN101957124B (en) * 2009-07-16 2012-08-08 中芯国际集成电路制造(上海)有限公司 Method for drying wafer
CN101879756B (en) * 2010-04-01 2012-08-22 浙江硅宏电子科技有限公司 Silicon wafer stripping machine
CN102569024A (en) * 2010-12-29 2012-07-11 中芯国际集成电路制造(上海)有限公司 Drying method and drying equipment after grinding and cleaning TSV (Temperature Safety Valve) through hole
CN103575075B (en) * 2012-07-25 2015-08-26 中国科学院微电子研究所 Silicon wafer spin-drying system
CN107516694A (en) * 2017-07-31 2017-12-26 常州市杰洋精密机械有限公司 A kind of wet-cleaning thing carrier predrainage method and hoisting mechanism used

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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING

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Address after: 201203 No. 18 Zhangjiang Road, Shanghai

Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation

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Address before: 201203 No. 18 Zhangjiang Road, Shanghai

Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20061004

Termination date: 20190226