CN1275310C - Process for making shallow slot segregation structure - Google Patents
Process for making shallow slot segregation structure Download PDFInfo
- Publication number
- CN1275310C CN1275310C CN 02123065 CN02123065A CN1275310C CN 1275310 C CN1275310 C CN 1275310C CN 02123065 CN02123065 CN 02123065 CN 02123065 A CN02123065 A CN 02123065A CN 1275310 C CN1275310 C CN 1275310C
- Authority
- CN
- China
- Prior art keywords
- layer
- isolation structure
- mask layer
- fleet plough
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a method for making a shallow trench isolation structure, wherein firstly, a pad oxide layer, a shielding screen layer, a dielectric anti-reflective coating layer and a top cover oxidation layer are orderly formed on a substrate, and then a trench is formed in the substrate; secondly, a lining oxide layer is formed on the surface of the trench, and an insulation layer is formed on the substrate to fill the trench. Thirdly, the shielding screen layer is used as a polishing end point, and a chemical mechanical making process which uses an optical end point detection system as end point detection is used to remove the insulation layer, the dielectric anti-reflective coating layer and the top cover oxidation layer from the shielding screen layer, wherein the thickness of the shielding screen layer is controlled within a first predetermined scope, and the thickness of the dielectric anti-reflective coating layer is controlled within a second predetermined scope to make an optical source used by the optical end point detection system to generate the maximum reflecting optical signal. Finally the shielding screen layer and the pad oxide layer are removed.
Description
Technical field
The invention relates to a kind of manufacture method of device isolation structure, and particularly relevant for a kind of fleet plough groove isolation structure (Shallow Trench Isolation, abbreviation STI) manufacture method is to improve the stability of fleet plough groove isolation structure endpoint detecting (End-point Detecting).
Background technology
In integrated circuit flourish today, device downsizing and the integrated trend that is inevitable also are the important topics of all circles' develop actively.When device size dwindles gradually, integrated level (Integration) improves gradually, and the isolation structure between device also must dwindle, so the device separation degree of difficulty also increases gradually.The past device isolation is utilized regional oxidizing process, and (LocalOxidation, the field oxide that LOCOS) forms (Field Oxide) because field oxide is subject to beak (Bird ' s Beak) characteristic of its external form, dwindle that its size is real has any problem.In view of this, existing other device isolation method continues to be developed, wherein with shallow trench isolation from (Shallow Trench Isolation STI) is widely used most, especially is applied in the ic manufacturing process of time half micron (Sub-half Micron).
The manufacture method of known fleet plough groove isolation structure is prior to forming pad oxide (Pad Oxide) and silicon nitride mask in the substrate, utilizing anisotropic (Anisotropic) dry ecthing method to etch precipitous groove again in substrate.Then, again groove is filled up insulating barrier and utilize the cmp manufacture craft to remove the outer insulating barrier of groove, as device isolation structure.Remove silicon nitride mask and pad oxide at last.
Yet the known practice is also not mentioned any method relevant for stable endpoint detecting (End Point Detecting) when carrying out the cmp manufacture craft.Because device size more and more little with integrated development in, usually the silicon nitride mask that is used as grinding endpoint can be more and more thin, so influence the stability of endpoint detecting easily, cause the reliability of endpoint detecting to reduce, therefore how reaching the stable of endpoint detecting has been very important problem.
The invention provides a kind of manufacture method of fleet plough groove isolation structure, to improve the stability of endpoint detecting, its method is included in and forms a pad oxide in the substrate in regular turn, one mask layer, one dielectric reflection coating layer (Dielectric Anti-Reflection Coating, be called for short DARC) and a top cover oxide layer (Cap Oxide), on the top cover oxide layer, form a patterning photoresist layer then, and be mask with this patterning photoresist layer, to the top cover oxide layer, dielectric reflection coating layer, mask layer and pad oxide carry out etching, and continue to be etched in the substrate, to form a groove.Then remove the patterning photoresist layer, form a lining oxide layer in flute surfaces again, and in substrate, form an insulating barrier and fill up groove.Subsequently with mask layer as grinding endpoint, utilize partial insulative layer, dielectric reflection coating layer and top cover oxide layer on the cmp manufacture craft removal mask layer, and use an optical end point detecting system to make endpoint detecting in the cmp manufacture craft, wherein the thickness of mask layer is controlled in one first fixed range, and the thickness of dielectric reflection coating layer is controlled in one second fixed range, makes the employed light source of optical end point detecting system to produce and has maximum reflected light signal.And then removal mask layer and pad oxide.
In order to reach the effect of stable endpoint detecting, the arrange in pairs or groups structure of mask layer and anti-reflecting layer of the present invention, the structure of promptly controlling mask layer and anti-reflecting layer is in a fixed thickness scope, substrate reflectivity during with the raising endpoint detecting, because substrate reflectivity is bigger, then the reliability of endpoint detecting (Reliability) is higher, and then reaches the stablizing effect of the endpoint detecting (End PointDetecting) of fleet plough groove isolation structure.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperation institute accompanying drawing elaborate.
Description of drawings
Figure 1A to Fig. 1 E is the making flow process generalized section according to a kind of fleet plough groove isolation structure of a preferred embodiment of the present invention;
Substrate reflectivity when carrying out endpoint detecting in the method for the E of emulation Figure 1A to Fig. 1 shown in Fig. 2 A;
The substrate reflectivity of the structure of known mask layer of emulation shown in Fig. 2 B and dielectric reflection coating layer when carrying out endpoint detecting.
Label declaration:
100: substrate 102: pad oxide
104,104a: mask layer 106: dielectric reflection coating layer
108: silicon oxide layer 112: photoresist layer
114: groove 116: lining oxide layer
118,118a: insulating barrier 120: fleet plough groove isolation structure
Embodiment
Figure 1A to Fig. 1 E is the making flow process generalized section according to a kind of fleet plough groove isolation structure of a preferred embodiment of the present invention.
Please refer to Figure 1A, on silicon base 100, form a pad oxide (Pad Oxide) 102, one mask layer 104, a dielectric reflection coating layer (Dielectric Anti-ReflectionCoating in regular turn, be called for short DARC) 106 with one deck top cover oxide layer (Cap Oxide) 108, on top cover oxide layer (Cap Oxide) 108, form one deck patterning photoresist layer 112 then.Wherein, pad oxide 102 is to be used at the bottom of the protecting group 100 destructions that avoid suffering follow-up manufacture craft, and its generation type is thermal oxidation method for example; And the generation type of mask layer 104 chemical vapour deposition technique for example, its material for example is a silicon nitride; And the error that dielectric reflection coating layer 106 causes can reduce resist exposure the time; Top cover oxide layer 108 is as the strengthening course of dielectric reflection coating layer 106, to strengthen its antireflecting function.
And in order to reach the effect of the endpoint detecting (End PointDetecting) of stablizing fleet plough groove isolation structure, need to improve substrate reflectivity, so the structure of collocation mask layer 104 and dielectric reflection coating layer 106 is for example controlled the mask layer 104 or the thickness of mask layer 104 and dielectric reflection coating layer 106 in a fixed range; For instance, if optical end point detecting system (Optical End Point Detection System) is when employed detected light wavelength is 637 nanometers, the thickness of mask layer 104 needs between 1200～1800 dusts, and preferred range is between 1200～1600 dusts; The thickness of dielectric reflection coating layer 106 then for example is between 450～1050 dusts.Therefore can improve the reliability (Reliability) of endpoint detecting according to said structure, make the employed light source of optical end point detecting system to produce and have maximum reflected light signal.
Then, please refer to Figure 1B, being mask with photoresist layer 112 carries out etching with pad oxide 102, and continues to be etched to substrate 100 to form a groove 114 top cover oxide layer 108, dielectric reflection coating layer 106, the mask layer 104 of its lower floor.Etching method for example uses the anisotropic etching manufacture craft.Remove this photoresist layer 112 then.
Then, please refer to Fig. 1 C, form a lining oxide layer (LinerOxide) 116 in the surface of groove 114.Form a layer insulating 118 then and fill up groove 114 in substrate 100, the material of this insulating barrier 118 for example is a silica, and its formation method for example is high density plasma CVD method (High Density Plasma CVD).
Then, please refer to Fig. 1 D, as grinding endpoint, utilize insulating barrier 118, dielectric reflection coating layer 106 and oxide layer 108 on the chemical mechanical milling method removal mask layer 104 with mask layer 104, and use an optical end point detecting system to make endpoint detecting in the cmp manufacture craft.Because mask layer 104 is controlled in the fixed range with the thickness of dielectric reflection coating layer 106, therefore when doing the grinding endpoint detecting, the employed light source of optical end point detecting system can have maximum reflected light signal so that can produce, so improved the reflectivity of substrate 100, to reach the effect of the endpoint detecting of stablizing fleet plough groove isolation structure, so can improve the reliability of endpoint detecting.After the cmp manufacture craft, insulating barrier 118a only is present in the groove 114, and also can become the mask layer 104a of thin thickness originally as the mask layer 104 of grinding endpoint.
At last, please refer to Fig. 1 E, remove mask layer 104a, when the material of mask layer 104a for example was silicon nitride, the method that removes mask layer 104a was for example used hot phosphoric acid solution.Remove pad oxide 102 subsequently, to form fleet plough groove isolation structure 120, its removal method is for example with hydrofluoric acid (HF) etch.
In order to verify that method of the present invention can improve reflectivity really, please refer to the substrate reflectivity when carrying out endpoint detecting in the method for the E of emulation Figure 1A to Fig. 1 shown in Fig. 2 A; And the substrate reflectivity of the structure of known mask layer of emulation shown in Fig. 2 B and dielectric reflection coating layer when carrying out endpoint detecting.
Please refer to Fig. 2 A, when the employed detected light wavelength of optical end point detecting system is 637 nanometers, the thickness of mask layer 104 is between 1200～1800 dusts, the thickness of dielectric reflection coating layer 106 is then between 450～1050 dusts the time, the relation of substrate 100 reflectivity that carry out endpoint detecting and obtain and detecting thickness is shown in Fig. 2 A, and the amplitude of its reflectivity (Amplitude) is about 0.25.
Then, please refer to Fig. 2 B, according to the structure of known mask layer and dielectric reflection coating layer, carry out endpoint detecting and substrate reflectivity that obtains and the relation of detecting thickness, shown in Fig. 2 B, the amplitude of its reflectivity is about 0.175.Therefore can learn obviously that the present invention can obtain the amplitude of higher substrate reflectivity than known method when carrying out endpoint detecting.
Therefore the invention is characterized in the structure of collocation mask layer and anti-reflecting layer, to improve substrate reflectivity, and then reach the stablizing effect of the endpoint detecting (End Point Detecting) of fleet plough groove isolation structure, so can improve the reliability (Reliability) of endpoint detecting.
Though the present invention with a preferred embodiment openly as above; right its is not in order to limiting the present invention, anyly is familiar with this operator, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims.
Claims (10)
1, a kind of manufacture method of fleet plough groove isolation structure is characterized in that: its step comprises:
One substrate is provided;
In this substrate, form a pad oxide;
On this pad oxide, form a mask layer;
On this mask layer, form a dielectric reflection coating layer;
On this dielectric reflection coating layer, form a top cover oxide layer;
On this top cover oxide layer, form a patterning photoresist layer;
With this patterning photoresist layer is mask, and this top cover oxide layer, this dielectric reflection coating layer, this mask layer and this pad oxide are carried out etching, and continues to be etched in this substrate, to form a groove;
Remove this patterning photoresist layer;
Form a lining oxide layer in the surface of this groove;
In this substrate, form an insulating barrier and fill up this groove;
With this mask layer as grinding endpoint, utilize a cmp manufacture craft to remove this insulating barrier of part, this dielectric reflection coating layer and this top cover oxide layer on this mask layer, wherein, use an optical end point detecting system to make endpoint detecting in this cmp manufacture craft;
Remove this mask layer;
Remove this pad oxide,
Wherein, the thickness of this mask layer is controlled in a fixed range, makes the employed light source of this optical end point detecting system to produce and has maximum reflected light signal.
2, the manufacture method of fleet plough groove isolation structure as claimed in claim 1, it is characterized in that: wherein the thickness of this dielectric reflection coating layer is controlled in another fixed range, makes employed this light source of this optical end point detecting system to produce and has maximum reflected light signal.
3, the manufacture method of fleet plough groove isolation structure as claimed in claim 1 or 2 is characterized in that: wherein the material of this mask layer comprises silicon nitride.
4, the manufacture method of fleet plough groove isolation structure as claimed in claim 3 is characterized in that: wherein the wavelength of employed this light source of this optical end point detecting system is for being 637 nanometers.
5, the manufacture method of fleet plough groove isolation structure as claimed in claim 4 is characterized in that: wherein the thickness of this fixed range of this mask layer is between 1200～1800 dusts.
6, the manufacture method of fleet plough groove isolation structure as claimed in claim 4 is characterized in that: wherein the thickness of this fixed range of this mask layer is between 1200～1600 dusts.
7, the manufacture method of fleet plough groove isolation structure as claimed in claim 2 is characterized in that: wherein the thickness of this fixed range of this dielectric reflection coating layer is between 450～1050 dusts.
8, the manufacture method of fleet plough groove isolation structure as claimed in claim 1 or 2 is characterized in that: the method that wherein forms this insulating barrier comprises the high density plasma CVD method.
9, the manufacture method of fleet plough groove isolation structure as claimed in claim 1 or 2 is characterized in that: the method for wherein removing this mask layer is used hot phosphoric acid solution.
10, the manufacture method of fleet plough groove isolation structure as claimed in claim 1 or 2 is characterized in that: the method that wherein removes this pad oxide is with the hydrofluoric acid etch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02123065 CN1275310C (en) | 2002-06-11 | 2002-06-11 | Process for making shallow slot segregation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02123065 CN1275310C (en) | 2002-06-11 | 2002-06-11 | Process for making shallow slot segregation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1464545A CN1464545A (en) | 2003-12-31 |
| CN1275310C true CN1275310C (en) | 2006-09-13 |
Family
ID=29743416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02123065 Expired - Fee Related CN1275310C (en) | 2002-06-11 | 2002-06-11 | Process for making shallow slot segregation structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1275310C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740461B (en) * | 2008-11-24 | 2012-01-18 | 中芯国际集成电路制造(北京)有限公司 | Method for manufacturing semiconductor device |
| CN101958279B (en) * | 2009-07-21 | 2013-01-16 | 中芯国际集成电路制造(上海)有限公司 | Method for improving width uniformity of grooves |
-
2002
- 2002-06-11 CN CN 02123065 patent/CN1275310C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1464545A (en) | 2003-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101094681B1 (en) | Method of preventing damage to porous low-k materials during resist stripping | |
| US6184142B1 (en) | Process for low k organic dielectric film etch | |
| US20050277289A1 (en) | Line edge roughness reduction for trench etch | |
| EP0932187A2 (en) | Trench etching using borosilicate glass mask | |
| CN1275310C (en) | Process for making shallow slot segregation structure | |
| CN100343973C (en) | Method of forming an isolation layer in a semiconductor device | |
| KR100451518B1 (en) | Isolation method of semiconductor device using shallow trench isolation process | |
| US5422312A (en) | Method for forming metal via | |
| US6509249B1 (en) | Method of fabricating shallow trench isolation | |
| US20090130819A1 (en) | Method for manufacturing semiconductor device | |
| CN112374456B (en) | Method for manufacturing MEMS device | |
| CN1233033C (en) | Method for reducing stress of isolated component to active zone and etching effect | |
| CN101106068B (en) | Method for making semiconductor material form mutual built-in pattern | |
| CN101740374A (en) | Method for etching more than 10mu m of dielectric layer | |
| TW559986B (en) | Method of fabricating shallow trench isolation | |
| CN101840858B (en) | Method for removing anti-reflective coating in top-level metallic dielectric layer groove etching process | |
| KR100443351B1 (en) | Method of forming contact hole for semiconductor device | |
| CN1260803C (en) | Forming process of shallow channel | |
| KR100521448B1 (en) | Method for fabricating the trench isolation in semiconductor device | |
| KR100546721B1 (en) | Method For Manufacturing Semiconductor Device | |
| JP2002246363A (en) | Method for manufacturing semiconductor device | |
| CN110875238A (en) | Trench isolation structure and manufacturing method thereof | |
| KR100659861B1 (en) | A method of detecting wrong semiconductor devices | |
| KR100318262B1 (en) | Method for forming alignment key of semiconductor device | |
| KR20000045464A (en) | Method for fabricating semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060913 Termination date: 20190611 |