CN1274395A - Dual frequency excitation of plasma for film deposition - Google Patents

Dual frequency excitation of plasma for film deposition Download PDF

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Publication number
CN1274395A
CN1274395A CN98809989A CN98809989A CN1274395A CN 1274395 A CN1274395 A CN 1274395A CN 98809989 A CN98809989 A CN 98809989A CN 98809989 A CN98809989 A CN 98809989A CN 1274395 A CN1274395 A CN 1274395A
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susceptor
frequency power
output
treatment chamber
method described
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CN1113978C (en
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坎姆·S·劳
罗伯特·M·罗伯森
上泉元
杰弗·奥尔森
卡尔·索伦森
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AKT Inc
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Applied Komatsu Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250 DEG C and 450 DEG C to deposit a smooth thin film onto the transparent substrate.

Description

The dual frequency excitation of plasma that is used for deposit film
The present invention relates to the system and method for deposit film, more specifically, relate to the improvement system and method for fast deposition high-quality thin film on the large-area transparent substrate.
In recent years, developed the liquid crystal cell of the high quality displayer that is used in light weight, little power consumption.One deck liquid crystal material that liquid crystal cell generally comprises two glass substrate and is clipped in the middle.Conductive film composition on two-layer substrate forms as thin film transistor circuit elements such as (TFT).Substrate can be connected with power supply to change the orientation of liquid crystal material, is each zone energising of liquid-crystal display selectively thereby can utilize thin film transistor.
Compare with silicon substrate, need on glass substrate, generate the layer of semiconductor channel material at deposition circuit element on the glass substrate.On glass substrate, deposit the conductive path that leads to grid then.Especially, for the back lane device, TFT need deposit one deck gate dielectric on the gate metal layer of composition.Continuously, can be at gate dielectric top deposited amorphous body silicon layer (a-Si).On this amorphous silicon layer, metal contact layer can be precipitated, the engagement capacity of the metal that the adulterated non-crystalline silicon of skim is used to improve and cover can be deposited on the amorphous silicon layer.Also can be on amorphous silicon layer deposited silicon nitride (SiN) or silicon oxide (SiO) layer as etch stopper.
With the reaction chamber of thin film deposition on the large-area glass substrate, adopt the plasma-enhanced chemical vapor deposition method usually, this reaction chamber adopts single high frequency electric source to cause decomposing gas in the treatment chamber.Although the high-energy that high frequency electric source produces can fully heat film top layer, the ion energy that produces is not enough to generate highly smooth film.In addition, because glass substrate is usually than big many of silicon substrate, the size of electrode can be near the wavelength under this supply frequency.This can make the strength of discharge skewness of glass substrate surface.This uneven distribution will cause the deposition of substrate surface upper film inhomogeneous.
Owing to above reason, the film surface that is deposited on the glass substrate is obviously coarse.And coarse film will reduce film quality.And the coarse of deposit film can influence electronic mobility, thereby finally causes the reduction of display performance.
The invention provides a kind of in reaction chamber on transparent substrate the equipment of depositing high-quality film.Described transparent substrate can be made of glass, quartz or polymkeric substance such as plastics etc.In treatment chamber with transparent substrate heating and in treatment chamber, feed flow of process air.Described equipment produces high frequency electric source output and low-frequency power output respectively from the high and low frequency power supply.High frequency electric source output and low-frequency power output are superimposed, and excite plasma to be approximately under 0.4 torr is approximately 250 ℃ to 450 ℃ to 3 torrs, temperature the condition at pressure from flow of process air and deposit slick film in transparent substrate.
According to this bright aspect, the high frequency electric source among the present invention all comprises impedance matching circuit and the wave filter that is connected with this impedance matching circuit with low-frequency power.
On the other hand bright according to this, the high frequency output among the present invention produces at about 13 megahertzes or higher frequency, and power is greatly between 1 to 5 kilowatt.And low frequency output produces being about under 2 megahertzes or the lower frequency, and power is about 300 watts to 2 kilowatts.
On the other hand bright according to this, handling gas can be the mixed gas of silane and oxygen, silane and nitrogen oxide, TEOS and oxygen or TEOS and nitrogen oxide.The binding substances that also can use silane, nitrogen and ammonia is as handling gas.
According to this bright another aspect, between substrate is placed in one on the susceptor of regional ground connection.Also can be with four corner-of-delta groundings of susceptor.
Bright more on the one hand according to this, substrate is at susceptor and gas can be fed between the shower nozzle of treatment chamber.Susceptor selectively with low frequency and high frequency electric source in one be connected, and shower nozzle and low frequency are connected with in the high frequency electric source another.
Advantage of the present invention is as follows.The film that generates with dual frequency excitation of plasma is very smooth.Thereby slick film provides better interface to improve the mobility of electronics for deposition subsequently.The raising of electronic mobility has also improved the electric property of indicating meter.The final film that generates is more stable.Other film characteristics such as density and stress also are improved, thereby sedimentation rate is improved.
Other characteristics of the present invention and advantage from following description (comprising accompanying drawing and claim) as can be seen.
Fig. 1 is the cross-sectional view of reaction chamber among the present invention.
Fig. 2 is for adopting the process flow sheet of dual frequency power supplies deposit film on the large-area transparent substrate.
Fig. 3 A, 3B and 3C are the layout structure sketch of the various mode of connection of dual frequency power supplies circuit in the reaction chamber.
Fig. 4 A, 4B and 4C are that the three-dimensional perspective performance of dual frequency power supplies reaction chamber and various single-frequency power supply reaction chambers institute's deposit film on the large-area transparent substrate compares.
Usually, in the operation of the present invention, transparent substrate is placed in the vacuum deposition process chamber, be heated to hundreds of degree centigrade (℃).In treatment chamber, inject deposition gases, and excite generation plasma reinforced chemical vapour deposition (PECVD) thereby reaction deposit thin film layers on transparent substrate by the dual frequency power supplies system.Sedimentary thin film layer can be dielectric layer (as SiN or SiO) or semiconductor layer (as a-Si).
The present invention can adopt the PECVD system by Applied KomatsuTechnology (AKT) the company manufacturing of California Santa Clara, also can adopt other commercially available depositing systems.Transparent substrate can be made with glass, quartz or polymkeric substance such as plastics etc.Substrate dimension commonly used is about 550 * 650 millimeters (mm).
As shown in fig. 1, PECVD device 130 comprises the susceptor 135 with bar 137.Susceptor 135 is positioned at the central authorities of vacuum deposition process chamber 133.Susceptor 135 with transparent substrate 38 as glass sheet support in substrate processing or conversion zone 141, have a hoisting appliance (not drawing among the figure) that susceptor 135 is raise or reduce.The instruction action that hoisting appliance sends according to controller (not drawing).Substrate 38 is sent to by the opening 142 on the sidewall 134 of chamber 133 with automatic saw blade (robot blade) (not drawing) and to be sent chamber 133.Substrate 38 is heated to about 250 to 400 ℃ by well heater 70, and well heater can be the resistance heater that is embedded in the susceptor 135.Also can adopt valve heater (lamp heater) or other suitable well heaters well known in the art.
Deposition process gases flows into chamber 133 by source of the gas collecting tubule 161 and gas inlet manifold 126.Source of the gas collecting tubule 61 is from supplying silane (SiH 4), tetraethyl orthosilicate (TEOS), oxygen (O 2), nitrogen oxide (N 2O), nitrogen (N 2) and ammonia (NH 3) source of the gas 56-59 receiver gases.Gas mainfold 61 can produce silane and oxygen, silane and nitrogen oxide (N 2O), the gas mixture of TEOS and oxygen or TEOS and nitrogen oxide is as handling gas.In addition, handle the binding substances that gas also can adopt silane, nitrogen and ammonia.Handle gas stream and cross the blocking template 124 of boring and the many holes 121 in processing gas distribution face plate or the shower nozzle 122.Can adopt various forms of shower nozzles, comprise the shower nozzle described in U.S. Patent No. 4,854.263,5,611.865 cited herein and 5,366.585.Distance between electrode space or substrate surface and panel 122 flux surfaces is about 400 to 1500 mils.Flow of process air is with shown in the small arrow in the substrate processing zone 141 among Fig. 1.In treating processes, chamber 133 keep-ups pressure at about 0.4 torr usually between 3 torrs, and temperature is between about 250 to 450 ℃.
In the chamber as shown in Figure 1, adopted plasma to strengthen depositing operation.Correspondingly, need suitable plasma triggering circuit, adopt dual band radio frequency (RF) power-supply system relatively good.Double frequency RF power-supply system comprises low frequency (LF) RF power supply 50 and high frequency (HF) RF power supply 60 is powered between gas distribution panel 122 and inductor block 135 to excite combination treatment gas to generate plasma.Low frequency RF power supply 50 range of frequency are approximately equal to or less than 2MHz greatly, are preferably in about 200kHz between the 500kHz.High-frequency RF power supply 60 power ranges approximately are equal to or greater than 13MHz, are preferably about 13.56MHz or its harmonic frequency.The RF power supply can be a fixed frequency, thereby or adopts the adjustable frequency can be tuning to installing 130.
The output of high-frequency RF power supply enters impedance matching network 62, and impedance matching network 62 is connected with the wave filter 64 of filter out noise.When only using high frequency electric source 60, the ion energy of generation is not enough to form very slick film.Increase low frequency RF power supply 50 and relevant impedance matching network 52, wave filter 54, can increase ion energy.The increase of ion energy can improve the deposit film configuration of surface.
Supply power is that about 1 to 5 kilowatt high-frequency RF power supply and power are that about 300 watts to 2 kilowatts low frequency RF power supply is to produce plasma on panel 122.Low frequency and high frequency electric source 50 and 60 make the reaction of plasma composition, deposit film on transparent substrate 38 together.
It may be noted that the RF power difference that different big or small substrates need.Therefore, above-mentioned particular power source power is applicable to and is of a size of about 550 * 650 millimeters substrate.It is more powerful that bigger substrate needs.For example, in same supply frequency, more large-area substrate need increase by two power supplys.Deposition process gases can enter exhaust chest 150 by the grooved hole 131 around substrate processing zone 141 from treatment chamber.Air-flow in the exhaust chest 150 enters the exhaust outlet 152 that is connected with the external vacuum pump (not shown) through vacuum shut-off valve 154.
The gaseous tension that pressure warning unit 63 is measured in the treatment chamber 133.Certainly, pressure warning unit can replace with the pressure transmitter of many other types.For example, can use the measuring ion meter.Can in evacuation circuit, place setter 136 and regulate total pressure in the treatment chamber 133.The signal of pressure warning unit 63 can be used as the input of electric controller of setter 136 to keep total chamber pressure constant.
Figure 2 shows that the process flow sheet that adopts dual frequency power supplies 50 and 60 deposit film on transparent substrate 38.At first, transparent substrate 38 is placed on the susceptor 135 (step 200); Then, with substrate heater 70 transparent substrate 38 is heated (step 202); Subsequently, the processing gas of processing source of the gas generation reaches balance (step 204) in reaction chamber; Connect high frequency electric source 60 and low-frequency power 50,, make deposit film (step 206) on the transparent substrate 38 at reaction chamber internal excitation plasma.Preferably connect high frequency electric source 60 earlier.But, also can connect the high and low frequency power supply simultaneously, perhaps also can at first connect low-frequency power as required.After thin film deposition is on transparent substrate, close the high and low frequency power supply, preferably close simultaneously (step 208).
Fig. 3 A, 3B and 3C have schematically illustrated the various electric connecting modes of dual frequency power supplies and shower nozzle 122 and susceptor 135.The output of Fig. 3 A medium and low frequency and high frequency electric source is superimposed and represents with voltage source 210.Voltage source 210 is connected to a bit on the shower nozzle 122.To be electrically connected and support bar 137 ground connection of susceptor 135 with susceptor 135, with the formation return path that made on the susceptor 135 the effusive electricity of accumulative electronics.
For big substrate, preferably adopt the mode of connection of Fig. 3 B.In this mode of connection, the voltage source 220 of low frequency and high frequency electric source stack output is carried in the center of shower nozzle 122.At the angle 230 of susceptor 135 and 232 places and bar 137 places a plurality of electronics return paths are set, and, locate also to be provided with the electronics return path at all the other two angles (not drawing) of tetragon susceptor.Therefore, four angles of all of susceptor 135 ground connection all.A plurality of electronics return paths make electronics thoroughly flow out from susceptor 135.
Although adopt the superimposed voltage source to be connected on the shower nozzle 122 among Fig. 3 A and the 3B, the present invention also considered can be on shower nozzle 122 and susceptor 135 situations that are connected different electrical power respectively.Among Fig. 3 C, the power supply 240 with first frequency is connected on the impedance matching circuit 242.Matching circuit 242 is connected to again on the wave filter 244 that is connected with shower nozzle 122.Correspondingly, the power supply 250 with second frequency is connected on the impedance matching circuit 252, and matching circuit 252 is connected to again on the wave filter 254 that is connected with susceptor 135.If first frequency is a high frequency, second frequency is a low frequency so; If first frequency is a low frequency, second frequency is a high frequency so.
Therefore, the high and low frequency power supply can superpose and be connected on the shower nozzle 122.In addition, also one of them of high and low frequency power supply can be connected to shower nozzle 122, and remaining one is connected on the susceptor 135.
Sedimentary film is better, as shown in table 1 with the sedimentary film quality of the inductor block of single high frequency electric source than routine according to the present invention.Preceding two tabulations are shown and are adopted power to be respectively single high frequency (HF) power supply of 4000W and 4800W in the table 1, and temperature is approximately 320 ℃, the characteristic of the silicon nitride film that pressure obtains when being about 20 torrs.Last is classified as and adopts medium and low frequency of the present invention and high frequency electric source system and take mode of connection shown in Fig. 3 B, the high and low frequency supply frequency is respectively about 400kHz and about 13.6MHz, the power supply total power is 4700W, temperature is about 320 ℃, and pressure is approximately the result who obtains under the condition of 2.0 torrs.
Table 1
The 4000W high frequency The 4800W high frequency 4000W high frequency and 700W low frequency
Sedimentation velocity 3700 dusts/minute 4000 dusts/minute 4000 dusts/minute
Use -0.8E9 dynes per centimeter 2 -4.5E9 dynes per centimeter 2 -6.5E9 dynes per centimeter 2
???WER 512 dusts/minute 344 dusts/minute 234 dusts/minute
Roughness (rms) 1.0 nanometer 1.74 nanometer 0.73 nanometer
As shown in Table, sedimentation rate and the employing power that adopts the reactor of dual frequency power supplies system is that the sedimentation rate of single high frequency electric source of 4800W is identical, all be 4000 dusts/minute.In these specific example, the stress of the film that the single-frequency power-supply system that the stress ratio that the film that adopts the dual frequency power supplies system to produce records adopts power to be respectively 4000W and 4800W is produced is big.Such stress value and the low wet etching speed (WER) and the high smooth degree that adopt dual frequency power supplies system deposit film to be had show that film is stable, high-quality.
Importantly, the roughness that records with rootmean-square (rms) mean value of the film that adopts dual frequency power supplies system deposition to obtain is better than adopting the roughness of the resulting film of single-frequency power-supply system.Roughness is big more, and electronics is big more by the resistance of sedimentary grid.Therefore, the smooth film that adopts dual frequency power supplies system deposition to obtain has higher electronic mobility, thereby has better display performance.
Adopt various reactors to deposit the surfaceness schematic three dimensional views of the film that obtains shown in Fig. 4 A-4C.Fig. 4 A and 4B are respectively shown in the table 1 and adopt power is the schematic three dimensional views of reactor institute deposit film of the single high frequency electric source system of 4000W and 4800W.Fig. 4 A surface ratio is more coarse, and its r.m.s. roughness is 1.00nm.More unfairness of Fig. 4 B, its r.m.s. roughness are 1.74nm.
On the contrary, shown in Fig. 4 C, the employing total power is that the film surface r.m.s. roughness that the dual frequency power supplies system deposition of 4700W obtains is 0.73nm.Therefore, although the power of total power and 4800W power supply is approaching, the film that the dual frequency power supplies reactor produces is more smooth more than 50% than the film that adopts 4800W single-frequency power supply to obtain.
The smooth film that adopts double frequency to excite plasma to obtain makes settled layer combination subsequently better, thereby has improved electronic mobility.The raising of electronic mobility has improved the electric property of indicating meter.Resulting film is also more stable.
Although describe the present invention according to specific embodiment and order above,, only otherwise depart from essence of the present invention and just can carry out various changes.The present invention can be used for various types of CVD system and adopt the system of different deposition methods with other.Mixed gas, temperature and pressure can change.For power supply, can not change supply frequency and impedance matching circuit is adjusted.In addition, although above-mentioned electrode space also can adopt other suitable interval between 400 to 1500 mils.And, can adopt various heating sequence and power cycle according to film and sedimentary sequence needs.
Above-mentioned various change is very clearly for those skilled in the art, and protection scope of the present invention is limited by claim subsequently.

Claims (22)

1. the method for a deposit film comprises the following steps:
In treatment chamber, transparent substrate is heated; Flow of process air is fed treatment chamber; The output of generation high frequency electric source; The output of generation low-frequency power; With described high frequency electric source output and low-frequency power output stack; And from handle gas, excite plasma with the output of synergetic high and low frequency power supply, with under the temperature between the pressure between about 0.4 to 3 torr and about 250 to 450 ℃ with thin film deposition on transparent substrate.
2. the method described in claim 1, wherein, the transparent substrate in the treatment chamber is a glass substrate.
3. the method described in claim 1, wherein, the transparent substrate in the treatment chamber is a quartz substrate.
4. the method described in claim 1, wherein, the air-flow that feeds in the treatment chamber comprises silane and oxygen.
5. the method described in claim 1, wherein, the air-flow that feeds in the treatment chamber comprises ethyl orthosilicate (TEOS) and oxygen.
6. the method described in claim 1, wherein, the air-flow that feeds in the treatment chamber comprises silane and nitrous oxide.
7. the method described in claim 1, wherein, the air-flow that feeds in the treatment chamber comprises TEOS and nitrous oxide.
8. the method described in claim 1, wherein, the air-flow that feeds in the treatment chamber comprises silane, nitrogen and ammonia.
9. the method described in claim 1 also comprises the shower nozzle that its middle zone links to each other with synergetic power supply output.
10. the method described in claim 1, wherein, substrate places on the susceptor with a plurality of angles and a middle portion, and also comprises the step of susceptor each angle and pars intermedia office ground connection.
11. the method described in claim 1 wherein, produced high frequency electric source output before low-frequency power output.
12. the method described in claim 1, wherein, substrate places on the susceptor, and places below the shower nozzle, and the step of stack power supply output also comprises:
One in the high and low frequency power supply output is applied on the susceptor, and will be wherein another be applied on the shower nozzle.
13. the method described in claim 1, wherein, high frequency electric source output approximate or frequency greater than 13 megahertzes under produce, power is about 1 to 5 kilowatt.
14. the method described in claim 1, wherein, low-frequency power output produces under the frequency that is approximately equal to or less than 2 megahertzes, and power is about 300 watts to 2 kilowatts.
15. the method described in claim 1, wherein, high frequency electric source output approximate or frequency greater than 13 megahertzes under produce, power is about 1 to 5 kilowatt; Low-frequency power output produces under the frequency that is approximately equal to or less than 2 megahertzes, and power is about 300 watts to 2 kilowatts.
16. the equipment of a deposit film comprises:
Can place the vacuum chamber of pending transparent substrate, the pressure of this vacuum chamber can be controlled between about 0.4 to 3 torr; Be connected gas is fed the processing source of the gas of vacuum chamber with vacuum chamber; Transparent substrate in the treatment chamber can be heated to about 250 to the 450 ℃ well heater of temperature; High frequency electric source; And low-frequency power, the output stack of this high and low frequency power supply, the processing gas activated plasma with from treatment chamber deposits film former on transparent substrate.
17. the equipment described in claim 16, wherein, high frequency electric source and low-frequency power all comprise: impedance matching circuit; And the wave filter that is connected with this impedance matching circuit.
18. the equipment described in claim 16, wherein, substrate places on the susceptor, susceptor ground connection.
19. the equipment described in claim 18, wherein, four angles of susceptor and middle portion be ground connection all.
20. the equipment described in claim 16 also comprises: one in the susceptor of support substrates, this susceptor and low frequency and high frequency electric source is connected; And will handle the shower nozzle that gas feeds treatment chamber, this shower nozzle is connected with in the high and low frequency power supply another.
21. the equipment described in claim 16 further comprises: will handle the shower nozzle that gas feeds treatment chamber, this shower nozzle has a middle portion, and is being connected with the output of high and low frequency power near this pars intermedia office.
22. the equipment described in claim 16 further comprises: will handle the shower nozzle that gas feeds treatment chamber, this shower nozzle has a middle portion, and is being connected with the output of high and low frequency power supply near this pars intermedia office; And the susceptor that is used for supporting transparent substrate, this susceptor has four angles and a middle portion, and four angles of this susceptor and middle portion be ground connection all.
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JP4371576B2 (en) 2009-11-25
CN1113978C (en) 2003-07-09
EP1019563A1 (en) 2000-07-19
US6024044A (en) 2000-02-15
TW438901B (en) 2001-06-07
JP2001520457A (en) 2001-10-30
WO1999019537A1 (en) 1999-04-22
WO1999019537A9 (en) 1999-07-29
KR100557666B1 (en) 2006-03-10
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KR20060007448A (en) 2006-01-24
KR20010030991A (en) 2001-04-16

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