CN1273641C - 一种高速生长硅基薄膜的低成本方法 - Google Patents
一种高速生长硅基薄膜的低成本方法 Download PDFInfo
- Publication number
- CN1273641C CN1273641C CN 03103964 CN03103964A CN1273641C CN 1273641 C CN1273641 C CN 1273641C CN 03103964 CN03103964 CN 03103964 CN 03103964 A CN03103964 A CN 03103964A CN 1273641 C CN1273641 C CN 1273641C
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- Prior art keywords
- base film
- silicon
- rapid growth
- cost effective
- silica
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005516 engineering process Methods 0.000 title claims description 33
- 239000007789 gas Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229920003023 plastic Polymers 0.000 claims abstract description 8
- 239000004033 plastic Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000010574 gas phase reaction Methods 0.000 claims abstract description 7
- 239000000376 reactant Substances 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 239000013081 microcrystal Substances 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 4
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910000085 borane Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 235000011089 carbon dioxide Nutrition 0.000 claims description 2
- 229910000078 germane Inorganic materials 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000005543 nano-size silicon particle Substances 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 34
- 239000010409 thin film Substances 0.000 abstract description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000010849 ion bombardment Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229910052990 silicon hydride Inorganic materials 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 239000007858 starting material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
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- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 03103964 CN1273641C (zh) | 2003-02-13 | 2003-02-13 | 一种高速生长硅基薄膜的低成本方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 03103964 CN1273641C (zh) | 2003-02-13 | 2003-02-13 | 一种高速生长硅基薄膜的低成本方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1438358A CN1438358A (zh) | 2003-08-27 |
CN1273641C true CN1273641C (zh) | 2006-09-06 |
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Application Number | Title | Priority Date | Filing Date |
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CN 03103964 Expired - Lifetime CN1273641C (zh) | 2003-02-13 | 2003-02-13 | 一种高速生长硅基薄膜的低成本方法 |
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CN (1) | CN1273641C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102330067A (zh) * | 2011-09-22 | 2012-01-25 | 中国航天科技集团公司第五研究院第五一○研究所 | 柔性基底微晶硅薄膜的快速、均匀制备方法 |
CN106856165B (zh) * | 2016-12-29 | 2019-12-13 | 浙江合特光电有限公司 | 一种硅锗低温外延方法 |
CN115537917A (zh) * | 2022-10-10 | 2022-12-30 | 浙江合特光电有限公司 | 一种钙钛矿外延生长工艺及用于该工艺的沉积设备 |
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2003
- 2003-02-13 CN CN 03103964 patent/CN1273641C/zh not_active Expired - Lifetime
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Publication number | Publication date |
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CN1438358A (zh) | 2003-08-27 |
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Effective date of registration: 20090306 Address after: Jiangnan hi tech Zone, South Ring Road, Licheng District, Quanzhou, Fujian Patentee after: GS-SOLAR (FU JIAN) Co.,Ltd. Address before: Tianjin City, Wei Jin Road No. 94 Patentee before: Nankai University |
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