CN1272465C - Velvet zinc oxide transparent conductive film and its preparation method - Google Patents
Velvet zinc oxide transparent conductive film and its preparation method Download PDFInfo
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- CN1272465C CN1272465C CN 03137254 CN03137254A CN1272465C CN 1272465 C CN1272465 C CN 1272465C CN 03137254 CN03137254 CN 03137254 CN 03137254 A CN03137254 A CN 03137254A CN 1272465 C CN1272465 C CN 1272465C
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Abstract
The present invention relates to a textured zinc oxide transparent conductive film and a preparation method thereof, which belongs to the technical field of photoelectric materials for manufacturing solar cells, particularly to the technical field of designing transparent conductive films for solar cells. The preparation method adopts a magnetron sputtering method which is characterized in that the pressure of the sputtering gas is from 3.0Pa to 15.0Pa, and the substrate temperature is from 20 DEG C to 400 DEG C. The textured zinc oxide transparent conductive film of the present invention has high textured degree, high surface roughness and capability of enhancing light absorption.
Description
Technical field:
Pile face zinc oxide transparent conductive film and preparation method thereof relates to the photoelectric material technical field that is used for solar cell, specially refers to the transparent conductive film design field that is used for solar cell.
Background technology:
Transparent conductive oxide (transparent conductive oxide, TCO) film mainly comprises In, the oxide compound of Sn, Zn, Cd and composite multi-component sull thereof, common light electrical characteristic such as have that the forbidden band is wide, visible range transmitance height and resistivity are low are usually as thin film solar cell transparency electrode, plane liquid-crystal display (LCD), plasma display (PDP) etc.The matte film is meant the film with certain surfaceness and optical property, and the criterion of matte is the suede degree (Haze) and the surfaceness (δ of matte
RMS), the suede degree is meant when the incident light wavelength is 550nm that (diffuse transmittance is Td) with total transmitance (total transmittance, ratio Tt) for the dispersion transmitance of film.Surfaceness adopts root-mean-square deviation roughness (root mean square roughness, δ
RMS).Oxidic transparent conductive film with matte, the main effect of its suede structure is by to reflection of light, refraction and scattering, the light that incides in the film is distributed to all angles, thereby increases the light path of light in the solar cell absorption layer, increase the absorption of light.
Existing matte fluorine-doped tin dioxide (fluorine-doped SnO in the prior art
2, SnO
2: F) transparent conductive film is made light restricted type amorphous silicon solar cell as the transparent preceding electrode of amorphous silicon film solar battery, has greatly improved the efficiency of conversion of solar cell and obtained application in actual production.But at SnO
2Preparation process in, require depositing temperature to reach more than 450 ℃, so increased cost greatly, limited its application.
Zinc oxide transparent conductive film refers generally to zinc oxide (the available ZnO:X represents) transparent conductive film of pure zinc oxide (ZnO) transparent conductive film and doped element X, and X refers generally to any element among IIIB family, Si and the Sn.As a kind of important TCO film, zinc oxide transparent conductive film not only has the features and applications of general oxidic transparent conductive film, enrich but also have material source, low price, excellent optics and electric property, in hydrogen plasma zone satisfactory stability, be difficult for making advantages such as the active reduction of solar cell material.Present ZnO and ZnO:X transparent conductive film all are light faces, do not embody more excellent characteristic in the solar cell application facet.Through literature search both domestic and external, do not find document about pile face zinc oxide transparent conductive film and preparation method thereof aspect.
Summary of the invention:
The objective of the invention is to, proposed a kind of pile face zinc oxide transparent conductive film, it has stronger optical absorption characteristics than general light face zinc oxide transparent conductive film, and the present invention has also designed the method for preparing the pile face zinc oxide transparent conductive film.
Pile face zinc oxide transparent conductive film proposed by the invention is characterised in that it is a kind of zinc oxide transparent conductive film of matte.
It is characterized in that the suede degree of described pile face zinc oxide transparent conductive film is 3.0%～31.6%.
It is characterized in that the roughness of described pile face zinc oxide transparent conductive film is 10.8nm～50.2nm.
Its preparation method is characterised in that: starting material adopt the ceramic target that contains zinc oxide, and the pressure of sputter gas is 8.0Pa～15.0Pa; Underlayer temperature is 20 ℃～400 ℃.
Experiment showed, that pile face zinc oxide transparent conductive film proposed by the invention has higher suede degree and surfaceness, can increase the absorption of light; This preparation method can prepare the pile face zinc oxide transparent conductive film of higher suede degree and surfaceness, has reached its intended purposes.
Description of drawings:
Fig. 1 is total transmitance (Tt) and suede degree (Haze) figure of film at visible region;
Fig. 2 is atomic force microscope (Atomic Force Microscopy, AFM) figure of embodiment 1;
Fig. 3 is the AFM figure of embodiment 2;
Fig. 4 is the AFM figure of embodiment 3;
Fig. 5 is the AFM figure of embodiment 4.
Embodiment:
The present invention adopts magnetically controlled sputter method to prepare the pile face zinc oxide transparent conductive film, and magnetron sputtering is existing the application in the preparation of zinc oxide transparent conductive film.
Embodiment 1:
As starting material, adopt high-purity argon gas as sputter gas with zinc oxide (ZnO) ceramic target, controlling argon pressure by piezo electric valve (can regulate argon pressure) is 9.0Pa, and substrate is a sheet glass, and underlayer temperature is 400 ℃.Operation steps:
1) the substrate sheet glass that will be used to prepare film carries out clean;
2) sheet glass being placed on the base vacuum degree is 2.0 * 10
-3In the vacuum chamber of the coating equipment of Pa;
3) begin to carry out sputter, sputtering time is 4 minutes, sputtering voltage 330V.
The result obtains Textured ZnO Transparent Conductive Thin Film, and its suede degree is 17.6%, and the total transmitance of visible region is 74.13%, calculates its root-mean-square deviation roughness δ
RMSBe 33.0nm, the surface topography of film as shown in Figure 2.
Embodiment 2:
Raw material adopts zinc oxide aluminum (94wt%ZnO+6wt%Al
2O
3) ceramic target, adopt high-purity argon gas as sputter gas, controlling argon pressure by piezo electric valve is 15.0Pa, and substrate is a sheet glass, and underlayer temperature is 250 ℃.Operation steps is the same with embodiment 1.
The result obtains textured ZnO: the Al transparent conductive film, and its suede degree is 31.6%, the total transmitance of visible region is 77.63%, calculates root-mean-square deviation roughness δ
RMSBe 50.2nm, the surface topography of film as shown in Figure 3.
Embodiment 3:
Raw material adopts zinc oxide silicon (96wt%ZnO+4wt%SiO
2) ceramic target, adopt high-purity argon gas as sputter gas, controlling argon pressure by piezo electric valve is 8.0Pa, and substrate is a sheet glass, and underlayer temperature is 150 ℃.Operation steps is the same with embodiment 1.
The result obtains textured ZnO: the Si transparent conductive film, and its suede degree is 8.3%, the total transmitance of visible region is 82.27%, calculates root-mean-square deviation roughness δ
RMSBe 22.8nm, the surface topography of film as shown in Figure 4.
Embodiment 4:
Raw material adopts zinc-tin oxide (99wt%ZnO+1wt%SnO
2) ceramic target, adopt high-purity argon gas as sputter gas, controlling argon pressure by piezo electric valve is 3.0Pa, and substrate is a sheet glass, and underlayer temperature is 20 ℃.Operation steps is the same with embodiment 1.
The result obtains textured ZnO: the Sn transparent conductive film, and its suede degree is 3.0%, the total transmitance of visible region is 86.93%, calculates root-mean-square deviation roughness δ
RMSBe 10.8nm, the surface topography of film as shown in Figure 5.
Among the preparation method of the present invention, base vacuum degree and voltage all are conventional parameters of preparation zinc oxide transparent conductive film.
Employing has the amorphous silicon solar cell of the ZnO electrically conducting transparent series thin film of suede degree, comparing with the amorphous silicon solar cell of the ZnO series thin film that should use up face, has higher photoelectric transformation efficiency.In the application of amorphous silicon solar cell, under the prerequisite of certain suede degree, requirement has the total transmitance of higher visible light, and the comprehensive action of the two can make solar cell that the absorption of visible light is reached maximum, and the embodiment prepared film has satisfied such requirement.
What by accompanying drawing 1 as seen, two solid lines were represented is total transmitance (Tt) and the suede degree (Haze) of embodiment one prepared film at visible region.What the dotted line of three kinds of forms was represented is the total transmitance of visible region (Tt) and the suede degree (Haze) of embodiment two, embodiment three and embodiment four prepared films.Has the usefulness same with embodiment one.Accompanying drawing 2～5 is the atomic force microscope figure of embodiment one, embodiment two, embodiment three and embodiment four prepared film, and as can be seen from the figure, transparent conductive film proposed by the invention has higher surfaceness.
Claims (4)
1, the pile face zinc oxide transparent conductive film is characterized in that, it is a kind of zinc oxide transparent conductive film of matte.
2, pile face zinc oxide transparent conductive film as claimed in claim 1 is characterized in that, the suede degree of described pile face zinc oxide transparent conductive film is 3.0%～31.6%.
3, pile face zinc oxide transparent conductive film as claimed in claim 1 is characterized in that, the roughness of described pile face zinc oxide transparent conductive film is 10.8nm～50.2nm.
4, the preparation method of pile face zinc oxide transparent conductive film as claimed in claim 1 is a magnetically controlled sputter method, it is characterized in that: starting material adopt the ceramic target that contains zinc oxide, and the pressure of sputter gas is 8.0Pa～15.0Pa; Underlayer temperature is 20 ℃～400 ℃.
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|---|---|---|---|
| CN 03137254 CN1272465C (en) | 2003-06-03 | 2003-06-03 | Velvet zinc oxide transparent conductive film and its preparation method |
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|---|---|---|---|
| CN 03137254 CN1272465C (en) | 2003-06-03 | 2003-06-03 | Velvet zinc oxide transparent conductive film and its preparation method |
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| CN1460728A CN1460728A (en) | 2003-12-10 |
| CN1272465C true CN1272465C (en) | 2006-08-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105438634A (en) * | 2014-09-18 | 2016-03-30 | 旭硝子株式会社 | Glass plate stack body and package method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110127182A (en) * | 2009-03-13 | 2011-11-24 | 스미토모 긴조쿠 고잔 가부시키가이샤 | Transparent conductive film and transparent conductive film laminate, processes for production of same, and silicon thin film solar cell |
| CN101661808B (en) * | 2009-09-15 | 2013-08-14 | 中国科学院上海硅酸盐研究所 | Multi-doping zinc-oxide-base wide-bandgap conducting material and preparation method thereof |
| JP5533448B2 (en) * | 2010-08-30 | 2014-06-25 | 住友金属鉱山株式会社 | Transparent conductive film laminate and manufacturing method thereof, thin film solar cell and manufacturing method thereof |
| CN102368513B (en) * | 2011-11-11 | 2013-03-27 | 保定天威集团有限公司 | Preparation method of double-structure suede transparent conducting oxide thin film of thin film cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105438634A (en) * | 2014-09-18 | 2016-03-30 | 旭硝子株式会社 | Glass plate stack body and package method thereof |
| CN105438634B (en) * | 2014-09-18 | 2018-05-04 | 旭硝子株式会社 | Glass plate laminate and its packing method |
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