CN1239283A - 光记录介质及其制造方法 - Google Patents

光记录介质及其制造方法 Download PDF

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CN1239283A
CN1239283A CN99106992A CN99106992A CN1239283A CN 1239283 A CN1239283 A CN 1239283A CN 99106992 A CN99106992 A CN 99106992A CN 99106992 A CN99106992 A CN 99106992A CN 1239283 A CN1239283 A CN 1239283A
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安孙子透
宫田一智
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Sony Corp
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Abstract

一种性能优良的光记录介质及其制造方法，该光记录介质具有由可发生晶态和非晶态可逆相变的相变型材料形成的记录层，且通过光束照射在该记录层上时引起该记录层上的相变，由此记录和/或擦除信息信号。该记录层包含作为相变型材料的AgαInβSbγTeδ,其中各组元的原子百分数α、β、γ、δ满足式6≤α≤16；1.1≤δ/β≤2.2以及2≤γ/δ≤3。

Description

光记录介质及其制造方法
本发明涉及一种光记录介质及其制造方法，该光记录介质具有由可发生晶态和非晶态可逆相变的相变型材料形成的记录层的，且通过光束照射在该光记录介质上使记录层发生相变以记录和/或擦除信息信号。
近来，在数据记录领域对光记录系统的研究进步很快。在该光记录系统中，以与记录介质非接触的方式记录/重放信息信号，使得记录密度比磁记录系统高出约一位数。而且光记录系统还有许多优点，例如可以处理只读型、一次写入型或重写型的存储状态。因此，作为可廉价地实现大容量文件的记录系统，在从工业型到家庭型的设备中光记录系统都有广阔的应用前景。
在上述光记录系统中，磁光盘和相变型光盘可以处理重写型的存储状态。在磁光盘中，磁材料的记录层被部分地加热到居里温度或温度补偿点以减小记录层的磁矫顽力。从外部施加记录磁场以改变记录层的磁化方向从而磁性地记录或读出信息信号。在相变型光盘中，具有由可发生晶态和非晶态可逆相变的相变型材料形成的记录层，通过照射激光束等使记录层温度上升以记录或擦除信息。而且信息信号从光盘中光学地读出。
在用作该相变型光盘的相变型材料中，有所谓的硫族-基合金材料，如Ge-Te基合金、Ge-Te-Sb基合金、In-Sb-Te基合金或Ge-Sn-Te合金。
在日本专利特开昭62-3886、特开昭63-225934、特开平-3-80635和特开平-8-32482中，详述了Ge-Sb-Te基合金的组分比。而且，在日本专利特开平-4-232779和特开平-166268中也详述了Ag-In-Sb-Te基材料的组分比。
但是，上述相变型光盘在高线速度、高记录密度信号特性或记录寿命方面并非是最优的，还需要继续提高和变型光盘的性能。
因此，本发明的目的在于提供一种光记录介质，它具有足够的高线速度、高记录密度和记录寿命，还具有足够的记录/擦除性能和在重写型存储时的重复使用寿命。
一方面，本发明提供一种光记录介质，它具有由可发生晶态和非晶态可逆相变的相变型材料形成的记录层，且通过光束照射在该记录层上时引起该记录层上的相变，由此记录和/或擦除信息信号。该记录层包含作为相变型材料的AgαInβSbγTeδ，其中各组元的原子百分数α，β，γ，δ满足式6≤α≤16、1.1≤δ/β≤2.2以及2≤γ/δ≤3。
在根据本发明的光记录介质中，通过将构成记录层的相变型材料的成分如此设定，可以提高记录层的相变速度，从而即使在高线速度下也能满意地记录信息信号。
另一方面，本发明提供一种制造光记录介质的方法，该光记录介质具有可发生晶态和非晶态可逆相变的相变型材料形成的记录层，且当光束照射在该记录层上时引起该记录层上的相变，由此记录和/或擦除信息信号。该记录层以AgαInβSbγTeδ为靶材通过溅射形成；且其中各组元的原子百分数α，β，γ，δ满足式6≤α≤16、1.1≤δ/β≤2.2以及2≤γ/δ≤3。
在根据本发明的制造光记录介质的方法中，通过在形成由相变型材料构成记录层时采用上述成分的靶材，可以提高记录层的相变速度，从而即使在高线速度下也能满意地记录信息信号。
即，通过限定构成记录层的AgαInβSbγTeδ的成分中的组元比，可以实现即使在高线速度下也能满意地记录信息信号。
而且，在用溅射形成记录层时通过限定靶材AgαInβSbγTeδ的成分中的组元比，可以实现即使在高线速度下也能满意地记录信息信号。
图1是示出根据本发明的光盘的示意性结构的剖面图；
图2是用来评价光盘的信号不稳定性(jitter)的记录波形；
图3是记录线速度和不稳性数值的关系图。
下面，参照附图详述本发明的优选实施方案。
图1是示出根据本发明的光盘的示意性结构的剖面图。该光记录介质是相变型盘式光记录介质，下面称作光盘。该光盘1在其衬底2的一个主面2a上，依次具有第一介电层3、记录层4、第二介电层5、热扩散层6和保护层7。
衬底2由可传播激光的材料，如聚碳酸酯或玻璃构成。
第一介电层3和第二介电层5优选地由至少包括ZnS的材料构成，可用例如ZnS-SiO2表示。第一介电层3优选地厚为60～130nm，具体地例如120nm。第二介电层5优选地厚为10～35nm，具体地例如20nm。
记录层4由作为相变材料的AgαInβSbγTeδ形成，其中组分比α，β，γ和δ(at％)满足式：6≤α≤16，1.1≤δ/β2.2和2≤γ/δ≤3。通过将由相变型材料形成的记录层的成分设置在这些数值范围中，可以提高相变速度，由此提高高线速度下的记录性能。记录层4优选地包含N或O。该记录层4优选地厚为15～35nm，具体地为30nm。
热扩散层6由例如铝形成，其厚度优选为60～150nm，具体地例如为120nm。
保护层7由例如紫外线硬化树脂构成。
为了向该光盘记录信息，从与主面2a相反的衬底2的另一主面2b部分地照入记录光如记录激光，将记录层4的一部分改变成预定的晶态或非晶态相以进行记录。取决于加热温度，通过快速加热或急冷上述相变型材料转变成非晶态，而缓慢冷却会转变为晶态。对应于信息信号，通过在记录层4上形成晶态区或非晶态区来记录信息。
为了从光盘1重放信息，从与主面2b相反的衬底主面2a向记录层射入重放光如激光，根据记录层4上的晶态相与非晶态对应的反射率的不同重现与晶态相或非晶态相所对应的信息。同时，重放光必须不致于引起记录层4的相变。
下面解释光盘1的制造方法。
首先，提供由可传播激光的材料如聚碳酸酯或玻璃构成的衬底2，并形成用于轨道的螺旋槽。
其次，在衬底2的具有槽的表面上淀积ZnS-SiO2等以形成第一介电层3。该第一介电层3厚度优选为60～130nm，具体地例如为120nm。
然后，在第一介电层3b上用溅射淀积作为相变型材料的AgαInβSbγTeδ以形成记录层4。该记录层4厚度优选为15～35nm，具体地例如为30nm。
在用溅射形成记录层4时，AgαInβSbγTeδ用作靶材，α，β，γ，δ的原子百分比满足式：6≤α≤16，1.1≤δ/β≤2.2和2≤γ/δ≤3。Ar气用作溅射气体。在Ar气中可能包含不超过10％的O2或N2气。通过使用包含O2或N2气的溅射气体，N或O被捕获进入记录层4。
然后，在记录层4上溅射淀积ZnS-SiO2形成第二介电层5。第二介电层5厚度优选为10～35nm，具体地例如为20nm。
然后，在第二介电层5上淀积铝等形成热扩散层6，该热扩散层6厚度优选为60～150nm，具体地例如为120nm。
最后，用旋涂法在热扩散层6上涂敷紫外线硬化树脂等形成保护层7，完成了光盘1。
下面描述一个试验例的构成光盘记录层的材料的成分，以及用溅射形成记录层时溅射气体的成分。实例
在该试验例中，改变构成记录层的AgαInβSbγTeδ的成分和用溅射形成记录层时溅射气氛中O2或N2气的含量，以制作光盘，并对得到的光盘进行了评价。
首先，制备聚碳酸酯衬底，在其一个主面上形成深0.85μm的用于轨道的螺旋槽，并在衬底的具有槽的表面上用溅射淀积厚为120nm的ZnS-SiO2以形成第一介电层。
然后，在该第一介电层上淀积30nm厚的AgαInβSbγTeδ以形成记录层。
然后用溅射淀积20nm厚的ZnS-SiO2以形成第二介电层。
在该第二介电层上用溅射淀积120nm厚的铝以形成热扩散层。
这种对于不同层的溅射是用具有针对不同材料的分隔室的溅射设备进行的。溅射时，各室的真空度设置为不高于5×10-5帕，此后将氢气引入以设置预定真空。
然后把在其上已形成各层的衬底从溅射设备中取出。在热扩散层上用旋涂法形成由UV硬化树脂形成的保护层以完成光盘。当AgαInβSbγTeδ的成分和形成记录层时所用溅射气氛中的O2或N2气含量如下表1所示变化时制备光盘样品，这些样品标记为样品1～44。
将这些光盘样品初始化，此处的初始化指将光盘的记录层设置成稳定的预定晶态层。
以光盘样品1～44评价了不稳定性数值和线速度的关系。
为了评估，用相变型光记录/重放设备进行了记录，线速度为4～16m/秒，用如图2所示的光照射模式，使得3T标记长度为0.576μm。在图2中，Pc表示0.5mW的功率，Ph和Pl表示得到最佳不稳定性数值的功率。
将重写十次后用窗口宽度归一化的标记边缘对时钟的标准偏差，作为不稳定性数值。在这种条件下，如果不稳定性数值不大于15％，可以纠错，不稳定性数值不大于15％时的线速度可以作为允许记录/重放的线速度。
检查并评价了不稳定性数值和线速度的关系。当不稳定性数值不大于15％时，任何线速度范围大于7m/秒则评为“OK(可以)”，若当不稳定性数值不大于15％时没有满意的线速度范围，评为“NG(否)”。
表1示出了对样品1～44，构成光盘记录层的AgαInβSbγTeδ的成分、溅射气氛中的O2和N2气的含量、以及不稳定性数值与线速度的关系。
对于构成记录层的AgαInβSbγTeδ的成分不满足式6≤α≤16，1.1≤δ/β2.2和2≤γ/δ≤3的样品，不稳定性数值和线速度的关系被评价为“NG”。
相反地，对于构成记录层的AgαInβSbγTeδ的成分满足式6≤α≤16，1.1≤δ/β2.2和2≤γ/δ≤3的样品，不稳定性数值和线速度的关系被评价为“OK”。
因此对于构成记录层的AgαInβSbγTeδ的成分满足式6≤α≤16，1.1≤δ/β2.2和2≤γ/δ≤3的样品，可以实现最佳的不稳定性能。
然而，如果构成记录层的AgαInβSbγTeδ的成分满足式6≤α≤16，1.1≤δ/β2.2和2≤γ/δ≤3的样品，但O2或N2气含量超过10％，则不稳定性数值和线速度的关系评价为“NG”。因此，溅射气氛中的O2或N2气的含量应为10％或更低。
【表1】
SampNo.     Ag[原子％]     In[原子％]     Sb[原子％]     Te[原子％] Te/In Sb/Te  O2  N2 判定
1  12.5  14.3  50.0  23.2  1.62  2.16  OK
2  12.5  14.3  50.0  23.2  1.62  2.16  5％  OK
3  10.0  13.7  49.0  27.3  2.00  1.79  NG
4  10.0  13.7  49.0  27.3  2.00  1.79  10％  NG
5  7.5  13.0  48.0  31.5  2.42  1.52  NG
6  0  11  45  44  4.00  1.02  NG
7  15.0  15.0  45.0  25.0  1.67  1.80  NG
8  14.0  14.0  35.5  36.5  2.61  0.97  NG
9  13  13  20  54  4.15  0.37  NG
10  14.3  12.5  50.0  23.2  1.85  2.16  OK
11  14.3  12.5  50.0  23.2  1.85  2.16  2％  OK
12  14.3  12.5  50.0  23.2  1.85  2.16  12％  NG
13  13.0  7.5  48.0  31.5  4.20  1.52  NG
14  5.5  5.5  45.0  44.0  8.00  1.02  NG
15  15.0  15.0  51.0  19.0  1.27  2.68  OK
16  15.0  15.0  51.0  19.0  1.27  2.68  2％  OK
17  15.0  15.0  51.0  19.0  1.27  2.68  5％  OK
18  15.0  15.0  51.0  19.0  1.27  2.68  10％  OK
19  15.0  15.0  51.0  19.0  1.27  2.68  15％  NG
20  12.0  6.5  32.5  49.0  7.54  0.66  NG
21  6.5  12.0  32.5  49.0  4.08  0.66  NG
22  8.7  8.7  47.0  35.7  4.10  1.32  NG
23  8.0  8.0  36.7  47.3  5.91  0.78  NG
24  31.0  8.0  46.0  15.0  1.88  3.07  NG
25  9.3  13.0  38.7  39.0  3.00  0.99  NG
26  8  13  49  30  2.31  1.63  NG
27  8  8.6  53.4  30  3.49  1.78  NG
28  8  18  56  18  1.00  3.11  NG
29  8  2  60  30  15.00  2.00  NG
30  6  11.6  58  24.4  2.10  2.38  OK
31  8  12  52  28  2.33  1.86  NG
32  8  11  59  22  2.00  2.68  OK
33  8  11  59  22  2.00  2.68  5％  OK
34  8  11  59  22  2.00  2.68  5％  OK
35  16  11  51  22  2.00  2.32  10％  OK
36  2  14  55  29  2.07  1.90  NG
37  4  13  53  30  2.31  1.77  NG
38  6  13  51  30  2.31  1.70  NG
39  9  19  48  24  1.26  2.00  OK
40  10  25  47  18  0.72  2.61  NG
41  3  13  55  29  2.23  1.90  NG
42  5  13  52  30  2.31  1.73  NG
43  8.5  16  48.5  27  1.69  1.80  NG
44  3  22  50  25  1.14  2.00  NG
图3示出对于光盘样品5～15，记录线速度和不稳定性数值之间关系的测量结果。图3示出对应于各个线速度值的不稳定性最小值。从图3可看出，对于光盘样品5，产生的不稳定性数值≤15％的线速度为≤4m/秒；而对于光盘样品15，即使线速度高达≥7m/秒，也可获得不稳定性数值≤15％的最佳不稳定性特性。

Claims (4)

1.一种光记录介质，该光记录介质具有由可发生晶态和非晶态可逆相变的相变型材料形成的记录层，且通过光束照射在该记录层上引起该记录层上的相变，由此记录和/或擦除信息信号，其特征在于：
所述记录层包含作为相变型材料的AgαInβSbγTeδ，其中各组元的原子百分数α，β，γ，δ满足式6≤α≤16、1.1≤δ/β≤2.2以及2≤γ/δ≤3。
2.如权利要求1所述的光记录介质，其中所述记录层包含N或O。
3.一种制造光记录介质的方法，该光记录介质具有可发生晶态和非晶态可逆相变的相变型材料形成的记录层，且通过光束照射在该记录层上引起该记录层上的相变，由此记录和/或擦除信息信号，其特征在于：
所述记录层以AgαInβSbγTeδ为靶材由溅射形成；且
其中各组元的原子百分数α，β，γ，δ满足式6≤α≤16、1.1≤δ/β≤2.2以及2≤γ/δ≤3。
4.如权利要求3所述的制造光记录介质的方法，其特征在于：
通过溅射形成所述记录层时，将Ar气和N2气或O2气的混合气体用作溅射气体，且
其中溅射气体中N2气或O2气的含量设置为≤10％。
CN99106992A 1998-06-05 1999-06-04 光记录介质及其制造方法 Pending CN1239283A (zh)

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