CN1238559A - 可再制的热塑性封装材料 - Google Patents
可再制的热塑性封装材料 Download PDFInfo
- Publication number
- CN1238559A CN1238559A CN98126215A CN98126215A CN1238559A CN 1238559 A CN1238559 A CN 1238559A CN 98126215 A CN98126215 A CN 98126215A CN 98126215 A CN98126215 A CN 98126215A CN 1238559 A CN1238559 A CN 1238559A
- Authority
- CN
- China
- Prior art keywords
- chip
- grid array
- ball grid
- described device
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Abstract
包括芯片、基体、跨芯片和基体形成芯片和基体间电导连接的至少一个焊剂连结以及在焊剂连结周围形成的封装材料的封装电路装置,其中的封装材料包括由环状低聚物经开环聚合形成的热塑性聚合物。
Description
本发明一般涉及集成电路装置的可再制热塑性封装材料,更具体涉及包括低分子量环状低聚物经开环聚合合成的高分子量聚合物的集成电路可再制封装材料。
集成电路组件常被包封起来以保持结构和功能的完整性。在许多的例子中,封装材料是固化的聚合物。可固化聚合的的属性包括固化前的加工性能和固化后的突出性能的结合。可固化树脂在固化前一般都有较低的粘度,甚至是在无溶剂时。这些聚合组合物在固化后呈现了热稳定性、韧性、粘合性和抗溶剂性。
这些聚合组合物的属性也可包括固化后的难加工处理性。难加工处理性常常是在热固性树脂中的低分子量前体转变成分子量基本上是无限的聚合物网状结构的固化反应的结果。这些属性使热固性树脂可理想地用于诸如单面和双面电路的电路装置的构造以及包括芯片载体、多芯片模块和多层板等其它类型的表面安装技术。
已经公开的有用的封装半导体装置的组合物范例包括Eichman等在US专利4,632,798中所述的组合物。Eichman等人公开的是一模塑组合物,包括可熔融加工的热变性液晶和约4,000-约10,000的相对低的重均分子量的聚合物,在加热时基本上不可能再有链的生长。分散在液晶和聚合物中的是接近40-80wt%的一种特别的无机材料(优选二氧化硅)。Eichiman等叙述了包括在使用前需要冷冻以及模塑时要求较长的循环周期和固化时间这些先有技术封装材料存在的问题。
Christie等人在US5,250,484中叙述了用于将半导体集成装置连结于基体上的焊剂联结,特别是形成有改进的疲劳寿命和稳定性的焊剂互联的结构。Christie等人的封装材料组合物含有诸如环脂聚环氧化合物的粘合剂、无机填料以及选择性使用的表面活性剂。
Papathomas等人在US5,471,096中公开了增加半导体装置和支承基体间的焊剂互联疲劳寿命的方法。Papathomas的组合物含约40-70wt%的二苯基M二氰酸酯并优选30wt%的4,4’-亚乙叉基二苯酚二氰酸酯和一无机填料。组合物中也可包括催化剂以促使氰酸酯混合物进行聚合。
Kohler等人在US5,064,895中也叙述了聚亚芳基硫化物(PAS)、优选聚亚苯硫化物(PPS)的模塑化合物,它们有较低的铁含量和延迟的结晶作用,并且也叙述了它们作为有源和无源电子组件包封化合物的用途。
Nakai在US5,160,786中公开了一种用于插入铅框的由聚芳硫化物树脂;与不饱和羧酸或其酐接枝共聚的α-烯烃共聚物;和纤维填料,非纤维无机填料或其混合物形成的树脂材料。
但这些封装材料一经固化就形成不能再制和难于加工处理的物质。因为考虑到电路装置在使用环境中的寿命,封装材料的难加工性更变成了一个不利因素。另外,在许多应用中离散装置的连接和其后的封装是在电路装置的环境中常要求使用高温的连续过程,而高温是碳化和毁坏固化的封装材料的。许多制造厂商负起了处理或回收他们的产品的责任。根据政府制订的条例,制造厂商甚至被要求负担产品的处理或再生。
不论热固性树脂是用作结构组成、粘合剂或是封装材料,难于处理的组合物也是与为修理、处置或回收而进行拆卸的概念不相容的。但如果组合物的设计是可以拆卸的,就可能保留热固性树脂的许多优点而去掉了难于加工处理的缺点。
所以仍然需要在固化后能提供所要求的固化性能和物理稳定性的封装材料,这种材料同时又是可再制的以便在集成电路装置的环境中能进行修理和替换分离的装置。
本发明的第一方面是提供有封装的电路装置,该装置包括芯片、基体、跨芯片和基体形成芯片和基体间的电导连接的至少一个焊剂连结和在焊剂连结周围的包括由环状低聚物开环聚合形成的热塑性聚合物的封装材料。
图1所示为倒装芯片装配过程示意图。
本发明是包封离散半导体装置的可再制的封装组合物,它包括由环状低聚体经开环聚合形成的线型热塑性聚合组合物。环状低聚物前体是由AB单体反应形成的,得到环状(AB)n低聚物(其中n为4或大于4)。组合物也可选择性地包括一填料。在半导体装置上施以环状低聚物前体,然后在装置上就地聚合。封装材料一经形成可以容易地应用参数进行再制。
封装材料
环状低聚物前体适合于从以AB单体为特征的单体来合成,AB单体含A型活性基团和B型活性基团。这些单体进行环化聚合产生可溶性低粘度的可加工环状低聚物。
表1所示为可用于形成环状低聚物的各种单体范例。
这些单体一般含有活性端基,诸如碳酸酯、芳基化物、醚和硫化物。这些单体的通式可为:ARB式中A和B各为一活性偶合基团,R为脂族、环脂、环状、芳基或杂环基。具体地说,A和B是独立地选自下列的基团:F、Cl、Br、CN、-NH2、-CO2H、-CO2R1、-C(O)R2、-OH和-NHC(O)R3,其中R1、R2和R3是各自独立的烷基(C1-6烷基)或芳基(例如苯基或苯甲基)。
所得到的聚合物是环状低聚物,通式为(ARB)n,式中n≥4。在阅读本说明书后本技术领域的技术熟练者会知道,在聚合时活性基团A与B可进行反应,因此不是严格地如上所限定。得到的环状低聚物可包括选自芳酰胺、酰亚胺、碳酸酯、酯、芳醚以及它们的混合物的聚合物。
一般说来,本发明组合物中所用的环状低聚物最好是低粘度(于溶液中或是熔体)的。环状聚合物开环聚合以形成适合于在应用处就地形成的热稳定的聚合物。这些聚合物的Tg一般低于约400℃,优选约150-350℃。另外,低聚物有低的粘度和高的溶解度。形成环状低聚物的优选单体类别包括芳酰胺、酰亚胺、酯、碳酸酯、芳醚等类,并优选芳醚苯基喹喔啉。
环状低聚物的聚合可进行到直到得到约5,000-35,000的重均分子量(Mw)。分解温度最好大于约400℃,优选大于约450℃。聚合一般在溶剂中发生,诸如二甲基甲酰胺、N-甲基吡啶酮或任何其它类似的偶极非质子传递溶剂。聚合也可在欲封装的芯片下方就地进行。开环聚合一般也要求有引发剂。就聚(芳醚苯基喹喔啉)而言,采用的是诸如4,4’-双苯氧化物的亲核引发剂。引发剂的用量约为1摩尔%。
填料
本发明的组合物可包括无机填料。封装材料可以用无机粉末进行填充以降低热膨胀系数。选择性的无机填料可以是本技术领域中已知的任何粉状固体,诸如矾土、硅石、氧化锌、滑石等。在微电子应用上优选的填料是粒径在25微米或更小的高纯形式的硅石。填料的用量一般是不相同的,但最好是在整个封装材料组合物的5-50wt%范围。
应用和回收
在聚合后,本发明的聚合组合物可用来封装任何种类和数量的半导体装置、电路组合或包装模块。有代表性的装置公开于Ehrenburg等人的US5,199,163和Harada等人的US3,801880中,二者均用于此供参考。
本发明可适用于典型的多芯片装置,诸如塑料球栅阵列、腔型塑料球栅阵列和倒装芯片、载带球栅阵列以及丝接陶瓷球栅阵列和倒装芯片陶瓷球栅阵列。本发明特别适合于倒装芯片或C4装置。用于这些装置的基体材料一般包括玻璃和陶瓷、聚酰亚胺、矾土陶瓷、环氧化物以及它们的混合物。
如图1所示,安装倒装芯片10连结。倒装芯片的互相连结给消除较贵、不可靠和没有效率的手工丝接提供了方法。这些连结一般被看做是可控-熔塌-芯片连结(或C4),其中倒置的芯片12与基体14对齐,所有的联结点16都是用反流焊剂同时在芯片和基体接触点18之间形成的。在连结形成后,在基体14和芯片12之间一般留有间隙20。焊剂一般包括芯片12和基体14间的电导接触,然后可将封装材料流入间隙20。
封装材料可以用热熔融体或高固体的水溶液和有机溶液来沉积。适合的溶剂包括水以及诸如PM乙酸酯、γ-丁内酯、环己酮、二甲基甲酰胺、甲乙酮、环戊酮、N-甲基吡咯烷酮和它们的混合物之类的有机溶剂。理想的本发明的封装材料具有约50g/L-500g/L的溶解度。
封装材料可以仅在芯片附近熔融并从热的熔融体借毛细管作用吸入装置。环状低聚物熔融后最好有低的粘度。如果是溶液,环状低聚物也可由毛细管作用吸入装置,然后加热挥发掉溶剂。
封装材料的再制只要将热量集中在指定的装置上去将热塑性聚合物加热至其Tg以上并将焊剂熔融。然后从基体上取下芯片。一般的再制温度在约250-400℃范围。
下面的实施例将给本发明提供非限制性的说明。
线型聚合物的喹喔啉活化的聚芳醚的合成已证明是聚芳醚苯基喹喔啉制备的有效途径。
由于AABB聚合物形成反应包括双(6-氟-3-喹喔啉)部分与酚盐的缩合,喹喔啉活化的醚合成扩展到A-B单体的自聚合。单体结构必须含有一酚羟基和喹啉环系上的6-或7-位的氟取代以易于亲核芳族置换。4-羟苯侧基聚(苯基喹喔啉)的制备是熟知的,并且在制备聚醚中使用双(羟苯基)苯基喹喔啉已经实验证明。6-氟-2-(4-羟苯基)-3-苯基喹喔啉(“HPQ”)的制备是用4-羟苯基(或其被保护的衍生物)与3,4-二氨基氟苯缩合,需要时再去保护来完成的。这样便得到AB单体的HPQ,可以聚合得到高分子量聚合物。
这样的AB单体的一有趣的特征是在适当的条件下形成环状低聚物的可能性。正如线型同类物,维持正确化学计量的严格单体送料标准在HPQ形成环状低聚物中是不要求的,因为1∶1的化学计量对于单体是固有的。碳酸酯、芳酰胺、酰亚胺、酯和芳醚单体的大环低聚物的制备和它们通过阴离子开环聚合(ROP)就地转变成线型高聚物已经得到证明。使用环状低聚物作为热塑性聚合物的前体的优点包括熔融体的低粘度和不释放挥发性副产物的可控熔融聚合。Hay和其共同工作者已发展了制取高产率大环化合物的步骤和亲核的引发剂以生产高聚合物,如下列文献中所公开:Chan等人,A.S.Macromolecules(大分子),1995,28,653;Chan等人,A.S.Polymer Prep.(聚合物制备)(Amer.Soc.Div.Polym.Chem.),1995,36(2),132;Wang等人,A.S.Polymer Prepr(聚合物制备)(Amer.Chem.Soc.Div.Polym.Chem.),1995,36(2),130;Wang等人,Dissertation(论文),McGill Universtiy,Montreal,Canada,1995。这些文献均在此提出供参考。
环状聚芳醚苯基喹喔啉的制备是通过在含碱的N-甲基-2-吡咯烷酮(NMP)溶液中HPQ的自聚合制备的,使用的是如Brunnelle和共同的工作者所述的假高稀释原理,也在Brunnelle的开环聚合:机理,催化,结构,应用(Ring-Opening Polymerization:Mechanism,Catalysis,Structure,Utility;HanserL New York)中所公开,在此提供参考。一般说来,环状低聚物是在环化比形成线型聚合物有利的稀释条件下制备的。但是这种反应条件在亲核的芳族取代聚合中是不可行的,因为在这些条件下氟化钾(一种缩合副产物)能充分溶解并能通过醚交换反应破坏化学计量。作为制备环状低聚物的比较实际的办法是采用如Brunnelle等人所述的一种不同的假高稀释条件。在此方法中反应物是被缓慢地加入反应瓶中的,以便尽可能减小活性端基的浓度。这些条件已显示有高产率环状化合物的产生。但在这样的反应中,环状低聚物的形成应快于添加速率以将线型聚合物的形成减至最低。为此,采用了芳基氟取代的单体,因为它比芳基氯取代的同类物有大得多的反应活性。
从HPQ形成环状低聚物是在碳酸钾存在下在NMP/甲苯混合物溶剂中以1%的固体浓度进行的。由于形成酚盐而产生的水是以与甲苯的共沸混合物而除去的。应当指出的是,甲苯的含量应仔细地保持在低水平,因为甲苯是非极性的并降低聚合速率。当反应维持在180℃时,观察到反应混合物是以所要求的速率回流的。HPQ浓溶液是在8小时的时间内加入反应混合物的。从迪安-斯达克(Dean-Stark)阱定期地除去了甲苯并替换以新鲜的干燥脱氧甲苯以保证脱水。为保证定量反应,可让反应进行另外24小时。将大环化合物溶液加入用水洗过(4次)的过量氯仿,然后干燥并浓缩。
聚芳醚苯基喹喔啉大环化合物的Tg为235℃,这一温度比线型同类物约低1O℃。Hay和其共同工作者也同样观察到了聚芳醚酮大环化合物的玻璃转化温度有类似的降低。但应注意,聚芳醚苯基喹喔啉大环化合物不显示真实的熔点,这与其它的大环化合物直接形成对照。这是由于在HPQ的合成中形成喹喔啉环的低区域选择性,其中有三个明显不同的异构体,类似于HPQ合成中形成的多异构苯基喹喔啉部分。相信这些异构体给予聚芳醚苯基喹喔啉大环化合物非晶形形态。正如它们以相同的方式在线型同类物中阻碍结晶。
易进行的环状聚(芳醚苯基喹喔啉)低聚物的开环聚合以形成高分子量线型聚合物是用亲核引发剂来完成的,因为芳醚键被吸电子基团激活(方法1)。Hay和其共同工作者发现在这种交换反应中4,4-双酚钾盐是熔融聚合最有效的引发剂(参见21,22)。因此芳醚苯基喹喔啉大环化合物的开环聚合是与1摩尔%的引发剂在300-350℃以熔融体进行的。表1所示为制备的聚合物的特性,包括反应时间、特性粘度和Tg。高反应温度得到的是高粘度,但加长反应时间将产生大量凝胶。
方法1式中n常为4-8左右。
表1聚(芳醚苯基喹喔啉)的特征
反应时间/温度(小时/℃) | NMP[η 25℃] | Tg(℃) |
300/1.5小时 | dl/g | 245 |
350/1.5小时 | 0.45 | 245 |
350/4小时 | 胶凝 | 245 |
以上结果证明,基于喹喔啉的聚(芳醚)大环化合物可以通过氟置换的聚合来合成,其中稠合吡嗪环是活性基团。A-B单体是在假高稀释条件下缩合的,其中线型聚合物在初始时产生,接着进行环化得到要求的大环化合物。在喹喔啉环形成中产生的区域异构体被留在大环化合物中并阻止结晶,使之有中等的开环聚合温度(~300℃)。使用亲核催化剂的开环聚合产生中等高分子量的线型聚芳醚苯基喹喔啉。
上述说明书、实施例和数据对本发明组合物的生产和使用进行了完全的说明。由于可以有许多具体实施方案不脱离本发明的精神和范围,本发明应归属于所附的权利要求书。
Claims (14)
1.一种封装的电路装置,该装置包括:
(a)芯片,
(b)基体,
(c)至少一个焊剂连结,其中所说的焊剂连结跨所说芯片和基体形成所说芯片和基体间的电导连接,
(d)在所说焊剂连结周围形成的封装材料,其中所说的封装材料包括由环状低聚物开环聚合形成的热塑性聚合物。
2.权利要求1所述的装置,其特征在于该基体包括选自玻璃、陶瓷、聚酰亚胺、热固性树脂以及它们的混合物的材料。
3.权利要求1所述的装置,其特征在于该装置包括倒装芯片。
4.权利要求1所述的装置,其特征在于该装置选自塑料球栅阵列、腔型塑料球栅阵列、载带球栅阵列、线接陶瓷球栅阵列和倒装芯片陶瓷球栅阵列。
5.权利要求1所述的装置,其特征在于环状低聚物是环状聚(芳醚苯基喹喔啉)。
6.权利要求1所述的装置,其特征在于所说的聚合物的分子量在约5,O00-35,000Mw范围。
7.权利要求1所述的装置,其特征在于所说的热塑性塑料包括选自碳酸酯、醚、芳酰胺、酰亚胺、芳醚以及它们的混合物的环状低聚物。
8.一种包括芯片、基体和至少一个跨该芯片和基体的焊剂连结的电路装置的封装方法,所说的焊剂连结形成该芯片和该基体间的电导连接,该方法包括将封装材料组合物在所说的焊剂连结周围流入所说装置的步骤,其中所说的封装材料包括由环状低聚物开环聚合形成的聚合物。
9.权利要求8所述的方法,其特征在于该封装材料被引入装置时的温度在约200-400℃范围。
10.权利要求8所述的装置,其特征在于所说的基体包括选自玻璃、陶瓷、聚酰亚胺、热固性树脂以及它们的混合物的材料。
11.权利要求8所述的装置,其特征在于所说的装置包括倒装芯片。
12.权利要求8所述的装置,其特征在于所说的装置选自塑料球栅阵列、腔型塑料球栅阵列、载带球栅阵列、线接陶瓷球栅阵列和倒装芯片陶瓷球栅阵列。
13.权利要求8所述的装置,其特征在于所说的聚合物的分子量在5,000-35,000Mw范围。
14.权利要求8所述的装置,其特征在于所说的热塑性聚合物包括选自碳酸酯、酯、芳酰胺、酰亚胺和芳醚以及它们的混合物的环状低聚物。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US000754 | 1997-12-30 | ||
US000,754 | 1997-12-30 | ||
US09/000,754 US6111323A (en) | 1997-12-30 | 1997-12-30 | Reworkable thermoplastic encapsulant |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1238559A true CN1238559A (zh) | 1999-12-15 |
CN1155081C CN1155081C (zh) | 2004-06-23 |
Family
ID=21692891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981262155A Expired - Fee Related CN1155081C (zh) | 1997-12-30 | 1998-12-29 | 一种封装的电路装置和其封装方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6111323A (zh) |
JP (1) | JP3208378B2 (zh) |
CN (1) | CN1155081C (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6288905B1 (en) * | 1999-04-15 | 2001-09-11 | Amerasia International Technology Inc. | Contact module, as for a smart card, and method for making same |
US6306688B1 (en) * | 1999-04-28 | 2001-10-23 | Teravicta Technologies, Inc. | Method of reworkably removing a fluorinated polymer encapsulant |
US6680436B2 (en) | 2000-07-12 | 2004-01-20 | Seagate Technology Llc | Reflow encapsulant |
JP3723483B2 (ja) * | 2001-10-16 | 2005-12-07 | 日本電気株式会社 | 電子部品装置 |
EP1794223A1 (en) * | 2004-09-30 | 2007-06-13 | Honeywell International Inc. | Thermally conductive composite and uses for microelectronic packaging |
US20060067055A1 (en) * | 2004-09-30 | 2006-03-30 | Heffner Kenneth H | Thermally conductive composite and uses for microelectronic packaging |
US7224050B2 (en) * | 2005-05-25 | 2007-05-29 | Intel Corporation | Plastic materials including dendrimers or hyperbranched polymers for integrated circuit packaging |
US7946175B2 (en) * | 2006-06-09 | 2011-05-24 | Hamilton Sundstrand Corporation | In-situ monitoring device and method to determine accumulated printed wiring board vibration stress fatigue |
US20070290378A1 (en) * | 2006-06-20 | 2007-12-20 | International Business Machines Corporation | Novel reworkable underfills for ceramic mcm c4 protection |
US8394483B2 (en) * | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US8083953B2 (en) | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) * | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US8294139B2 (en) | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US7959975B2 (en) * | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US8404124B2 (en) * | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US8283258B2 (en) * | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
US8101261B2 (en) * | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US8425982B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8426313B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8114300B2 (en) | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US20090321922A1 (en) * | 2008-06-30 | 2009-12-31 | Ravi Shankar | Self-healing thermal interface materials for semiconductor packages |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US9177795B2 (en) | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4835778A (zh) * | 1971-09-09 | 1973-05-26 | ||
US3864426A (en) * | 1973-05-23 | 1975-02-04 | Union Carbide Corp | Thermal shock resistant epoxy compositions |
US4012832A (en) * | 1976-03-12 | 1977-03-22 | Sperry Rand Corporation | Method for non-destructive removal of semiconductor devices |
JPS5717153A (en) * | 1980-07-04 | 1982-01-28 | Asahi Glass Co Ltd | Sealing method of electronic parts |
EP0051165A1 (en) * | 1980-11-03 | 1982-05-12 | BURROUGHS CORPORATION (a Michigan corporation) | Repairable IC package with thermoplastic chip attach |
DE3278567D1 (en) * | 1981-10-03 | 1988-07-07 | Japan Synthetic Rubber Co Ltd | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
US4529755A (en) * | 1982-10-23 | 1985-07-16 | Denki Kagaku Kogyo Kabushiki Kaisha | Epoxy resin composition for encapsulating semiconductor |
US4632798A (en) * | 1983-07-27 | 1986-12-30 | Celanese Corporation | Encapsulation of electronic components with anisotropic thermoplastic polymers |
FR2553784B1 (fr) * | 1983-10-19 | 1986-12-12 | Rhone Poulenc Spec Chim | Encapsulation de l'accelerateur de durcissement de compositions organopolysiloxaniques contenant des polyacyloxysilanes et durcissant en elastomeres |
US4663190A (en) * | 1984-03-08 | 1987-05-05 | Hitachi Chemical Company, Ltd. | Process for producing semiconductor element |
CA1249691A (en) * | 1984-07-18 | 1989-01-31 | Janis Robins | Fast curing epoxy resin compositions |
US4738892A (en) * | 1985-09-27 | 1988-04-19 | Pcr, Inc. | Silica filler for epoxy encapsulants and epoxy encapsulants containing same |
US4729062A (en) * | 1986-06-16 | 1988-03-01 | Hughes Aircraft Company | Reworkable encapsulated electronic assembly |
JPH0791446B2 (ja) * | 1987-03-31 | 1995-10-04 | 株式会社東芝 | 樹脂封止半導体装置 |
US4983683A (en) * | 1987-10-05 | 1991-01-08 | Hi-Tek Polymers, Inc. | Polycyanate esters of polyhydric phenols blended with thermoplastic polymers |
DE3828056A1 (de) * | 1988-08-18 | 1990-02-22 | Bayer Ag | Polyarylensulfid-formmassen und deren verwendung als einbettmasse fuer aktive und passive elektronische bauelemente |
US4985751A (en) * | 1988-09-13 | 1991-01-15 | Shin-Etsu Chemical Co., Ltd. | Resin-encapsulated semiconductor devices |
US5286572A (en) * | 1988-11-28 | 1994-02-15 | International Business Machines Corporation | Planarizing ladder-type silsequioxane polymer insulation layer |
JP2643518B2 (ja) * | 1989-02-10 | 1997-08-20 | 東レ株式会社 | プリプレグ |
GB8911607D0 (en) * | 1989-05-19 | 1989-07-05 | Emi Plc Thorn | A method of encapsulation for electronic devices and devices so encapsulated |
US5264520A (en) * | 1989-09-01 | 1993-11-23 | The Dow Chemical Company | Polymerization of cyclic poly(aryl ether) oligomers |
FR2656317B1 (fr) * | 1989-12-27 | 1994-02-04 | Rhone Poulenc Chimie | Microspheres magnetisables a base de polysilsesquioxane, leur procede de preparation et leur application en biologie. |
KR940003263B1 (ko) * | 1989-12-27 | 1994-04-16 | 폴리 플라스틱스 가부시끼가이샤 | 리이드 프레임 삽입용 수지재료와 그 성형부품 |
JPH03222339A (ja) | 1990-01-29 | 1991-10-01 | Casio Comput Co Ltd | 半導体装置の接続方法 |
US5089440A (en) * | 1990-03-14 | 1992-02-18 | International Business Machines Corporation | Solder interconnection structure and process for making |
US5140068A (en) * | 1990-04-27 | 1992-08-18 | The B. F. Goodrich Company | Epoxy resin systems modified with low viscosity statistical monofunctional reactive polymers |
KR930701561A (ko) * | 1990-06-08 | 1993-06-12 | 게리 엘. 그리스울드 | 전자 용품용 재처리가능한 접착제 |
US5061657A (en) * | 1990-07-18 | 1991-10-29 | The United States Of America As Represented By The Secretary Of The Navy | Method of making integrated circuit to package electrical connections after encapsulation with an organic polymer |
US5120678A (en) * | 1990-11-05 | 1992-06-09 | Motorola Inc. | Electrical component package comprising polymer-reinforced solder bump interconnection |
US5326413A (en) * | 1990-11-19 | 1994-07-05 | Pearle, Inc. | Hot melt adhesive composition that melts at relatively low temperatures |
DE4100802A1 (de) * | 1991-01-14 | 1992-07-16 | Hoechst Ag | Heteroaromatischer polyether |
US5072874A (en) * | 1991-01-31 | 1991-12-17 | Microelectronics And Computer Technology Corporation | Method and apparatus for using desoldering material |
JP2526747B2 (ja) * | 1991-05-21 | 1996-08-21 | 信越化学工業株式会社 | エポキシ樹脂組成物及び半導体装置 |
JP2523250B2 (ja) * | 1991-08-16 | 1996-08-07 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ジシアネ―トの混合物を含む組成物 |
US5360350A (en) * | 1991-08-23 | 1994-11-01 | The Whitaker Corporation | Sealant compositions and sealed electrical connectors |
JP3141459B2 (ja) | 1991-10-15 | 2001-03-05 | 東ソー株式会社 | アミノ基含有ポリアリ−レンスルフィドの製造方法 |
US5274913A (en) * | 1991-10-25 | 1994-01-04 | International Business Machines Corporation | Method of fabricating a reworkable module |
US5281669A (en) * | 1992-04-13 | 1994-01-25 | General Electric Company | Blends of linear polymers with macrocyclic oligomers |
US5199163A (en) * | 1992-06-01 | 1993-04-06 | International Business Machines Corporation | Metal transfer layers for parallel processing |
US5313365A (en) * | 1992-06-30 | 1994-05-17 | Motorola, Inc. | Encapsulated electronic package |
US5498689A (en) * | 1992-07-29 | 1996-03-12 | Sumitomo Chemical Company, Limited | Modified polyphenylene ether, process for preparing the same and thermoplastic resin composition comprising the same |
US5381304A (en) * | 1993-06-11 | 1995-01-10 | Honeywell Inc. | Reworkable encapsulated electronic assembly and method of making same |
US5744557A (en) * | 1993-06-16 | 1998-04-28 | Minnesota Mining And Manufacturing Company | Energy-curable cyanate/ethylenically unsaturated compositions |
US5371328A (en) * | 1993-08-20 | 1994-12-06 | International Business Machines Corporation | Component rework |
JP2637684B2 (ja) | 1993-09-29 | 1997-08-06 | 松下電器産業株式会社 | 半導体装置の封止方法 |
US5405956A (en) * | 1994-03-01 | 1995-04-11 | Hay; Allan S. | Cyclic oligomers for production of linear polyketones, polyphthalazines and polyisoquinolines |
US5434751A (en) * | 1994-04-11 | 1995-07-18 | Martin Marietta Corporation | Reworkable high density interconnect structure incorporating a release layer |
US5474620A (en) * | 1994-05-16 | 1995-12-12 | United Solar Systems Corporation | Cut resistant laminate for the light incident surface of a photovoltaic module |
US5460767A (en) * | 1994-05-31 | 1995-10-24 | Delco Electronics Corporation | Hot melt masking materials |
JPH0831871A (ja) | 1994-07-11 | 1996-02-02 | Ibiden Co Ltd | 電子部品を表面実装する際に使用する界面封止用フィルム、及び電子部品の表面実装構造 |
JP3222339B2 (ja) | 1994-12-22 | 2001-10-29 | 川崎製鉄株式会社 | 包装原紙掛替え装置 |
US5817545A (en) * | 1996-01-24 | 1998-10-06 | Cornell Research Foundation, Inc. | Pressurized underfill encapsulation of integrated circuits |
US5821456A (en) * | 1996-05-01 | 1998-10-13 | Motorola, Inc. | Microelectronic assembly including a decomposable encapsulant, and method for forming and reworking same |
JPH1140711A (ja) | 1997-07-22 | 1999-02-12 | Fujitsu Ltd | 半導体チップ封止剤、並びにそれを用いた封止方法及び基板補修方法 |
-
1997
- 1997-12-30 US US09/000,754 patent/US6111323A/en not_active Expired - Lifetime
-
1998
- 1998-12-18 JP JP36146698A patent/JP3208378B2/ja not_active Expired - Fee Related
- 1998-12-29 CN CNB981262155A patent/CN1155081C/zh not_active Expired - Fee Related
-
2000
- 2000-06-05 US US09/587,336 patent/US6531343B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1155081C (zh) | 2004-06-23 |
US6531343B1 (en) | 2003-03-11 |
JPH11274376A (ja) | 1999-10-08 |
JP3208378B2 (ja) | 2001-09-10 |
US6111323A (en) | 2000-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1155081C (zh) | 一种封装的电路装置和其封装方法 | |
EP2647671B1 (en) | Polyamide composition for reflector, reflector, light emitting device including the reflector, and lighting device and image display device each including the light emitting device | |
CA1272000A (en) | Encapsulation of electronic components | |
CN1117818C (zh) | 用于电子封装的热固性密封剂 | |
El‐ghayoury et al. | Supramolecular hydrogen‐bonded oligo (p‐phenylene vinylene) polymers | |
US20080251935A1 (en) | Low shrinkage polyester thermosetting resins | |
CN1240465A (zh) | 倒装片器件用热可再加工粘合剂 | |
RU2006110520A (ru) | Модифицированные растворителем смоляные системы, содержащие наполнитель, которые имеют высокую tg, прозрачность и хорошую надежность в применениях в качестве герметика уровня полупроводниковой пластины | |
CN101245231A (zh) | 胶粘剂组合物、粘膜和生产半导体器件的方法 | |
TW200807643A (en) | Novel reworkable underfills for ceramic MCM C4 protection | |
CN101490187A (zh) | 用于电子组件的可固化的防护剂 | |
TW201030067A (en) | Molding compound including a carbon nano-tube dispersion | |
US6326237B1 (en) | Reworkable thermoplastic hyper-branched encapsulant | |
JP3430150B2 (ja) | 光半導体素子封止用エポキシ樹脂組成物の製造方法 | |
WO2012039437A1 (ja) | 粉末状封止剤及び封止方法 | |
JP2000355622A (ja) | エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置 | |
CN1146984C (zh) | 半导体封装用芯片支持基片、半导体装置及其制造方法 | |
Roitman et al. | Polymer thermosetting organic light-emitting devices | |
KR20220091038A (ko) | 반도체 패키지용 언더필 필름 및 이를 이용하는 반도체 패키지의 제조방법 | |
JP2009013308A (ja) | シート状エポキシ樹脂組成物およびそれを用いた半導体装置 | |
JPH01171253A (ja) | 半導体装置 | |
JP2674191B2 (ja) | ハイブリッドic基板用封止材料 | |
JP3353847B2 (ja) | 半導体封止用樹脂組成物及び樹脂封止型半導体装置 | |
CN116694058A (zh) | 含热可逆共价键的聚芳醚酮3d打印材料的制备方法 | |
Li et al. | Development of new reworkable epoxy resins for flip chip underfill applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040623 Termination date: 20100129 |