CN1233026C - Apparatus for mfg of semiconductor - Google Patents
Apparatus for mfg of semiconductor Download PDFInfo
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- CN1233026C CN1233026C CNB031274935A CN03127493A CN1233026C CN 1233026 C CN1233026 C CN 1233026C CN B031274935 A CNB031274935 A CN B031274935A CN 03127493 A CN03127493 A CN 03127493A CN 1233026 C CN1233026 C CN 1233026C
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- core tube
- furnace core
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Abstract
The object of the present invention is to provide a semiconductor manufacturing device having the furnace core tube with a shape easy for machining and with high mechanical strength for heat treatment on the processing object. The semiconductor manufacturing device comprises: the furnace core tube with two opened ends along the axial direction, and formed as a furnace space accommodating the semiconductor wafer; and, two caps having openings connecting to the furnace space formed at two ends in the axial direction of the furnace core tube on the body of the furnace core tube, and sealing one end of the furnace core tube in the axial direction. Because each cap is configured with the furnace core tube body, each cap and the furnace core tube can be manufactured in different steps. Moreover, because there is no need for configuring the manifold at the furnace core tube for forming the openings, the furnace core tube can be easily machined and the strength of the furnace core tube can be improved.
Description
Technical field
The present invention relates to semiconductor-fabricating device, be applicable in inert gas environment such as nitrogen and argon gas for example or reducibility gas environment such as hydrogen in to semiconductor wafer carry out high-temperature process heat treatment, add the semiconductor DIFFUSION TREATMENT of impurity and generate and handle etc. by epitaxially grown film.
Background technology
In making semi-conductive various operations, the processing method of accommodating object being treated and heating in the heating furnace that inert gas or reducibility gas are full of is arranged, annealing in process and Alloying Treatment etc. are for example arranged.
When carrying out with high-energy injecting the ion injection processing of ion in object being treated, object being treated sustains damage.For example object being treated is under the monocrystal situation, with a plurality of lattice defects that take place to be made of displacement atom and lattice vacancy.Annealing in process is used to eliminate described lattice defect, when realizing that by heat treatment crystallinity is recovered, in the ion atoms of lattice vacancy displacement injection.In annealing in process, to use the annealing furnace of long-time heating object being treated.Annealing in process except ion injects processing, can also be carried out after forming processing by epitaxially grown film.In addition,, carry out electrode material and semi-conductive alloying for Alloying Treatment, in order to ensure between the element that forms on the substrate or element and external circuit be connected to form the ohmic contact of contact, to the processed heat treated of carrying out, utilize alloying furnace.
Fig. 3 is the profile of expression conventional semiconductor manufacturing installation 1.Semiconductor-fabricating device 1 is the heating furnace that is used to heat semiconductor wafer 3, has the furnace core tube 2 that forms the stove space 10 of accommodating semiconductor wafer 3.Furnace core tube 2 has; The furnace core tube main part 5 of end summary tubular is opened wide and be formed with in axis direction the other end 6 in axis direction one end 4; In the tubulose arm portion 7 that the other end 6 of furnace core tube main part 5 is provided with.Arm portion 7 has the interior week footpath L2 littler than the footpath L1 of interior week of furnace core tube main part 5, interior all spaces of furnace core tube 2 and interior all spatial communication of arm portion 7.Just, furnace core tube 2 forms axis direction one open ended the time, and axis direction the other end dwindles the shape that forms undergauge.
Semiconductor-fabricating device 1 has: the heater 8 that the semiconductor wafer 3 that is housed in stove space 10 is heated; The cap 9 of one end 4 of the stifled furnace core tube main part 5 of plug.Semiconductor-fabricating device 1 is supplied with the environmental gas that is full of in the stove space from arm portion 7, heating semiconductor wafer 3.
Such semiconductor-fabricating device 1 is used for forming oxide-film on semiconductor wafer 3.In the oxidizing process that forms oxide-film, in oxidative environment gas, semiconductor wafer 3 heat to 1000 are spent.The quality of the oxide-film that is formed by semiconductor-fabricating device 1 and stability are decided by environmental gas in the stove and temperature etc.The quality of this oxide-film and stability are owing to be one of principal element of the quality of the semiconductor element of operation manufacturing after being controlled at, and therefore tackling semiconductor-fabricating device 1 carries out strict control.
In the stove space, when forming oxide-film under the state that is containing sodium, will produce bad influence to the property of semiconductor element of making in the back operation.Therefore, furnace core tube 2 does not adopt the common glass that contains the sodium metal, and uses high-purity quartz.To furnace core tube main part 5,, then can reduce the factor of in heat treatment, sneaking into unwanted impurity from arm portion 7 owing to form a continuous shape.
Furnace core tube 2 shown in Figure 3, at integrated circuit (Integrated Circuit, abbreviation IC) in etc. the manufacturing, except the oxidation processes of carrying out semiconductor wafer, even described annealing in process and Alloying Treatment also adopt and the furnace core tube 2 identical shaped furnace core tubes that are made of same material shown in Figure 3.For example open in the clear 58-175828 communique, disclose the annealing in process of using furnace core tube 2 shown in Figure 3 the spy.
Summary of the invention
In the heat treatment of semiconductor-fabricating device, adopt the semiconductor-fabricating device of annealing in process and Alloying Treatment situation etc., temperature treatment to object being treated is important, compares with the oxidation processes that on object being treated, forms oxide-film, and be to handle at low temperatures.And, comparing with oxidation processes, the cleannes in the stove are that the sneaking into property of foreign substances of the environmental gas in the stove is little to processed object being treated quality influence.
In the past, even cleannes are carried out under the situation of strict control in needn't be to high-temperature process as annealing in process and Alloying Treatment and stove, also adopted to have the strict semiconductor-fabricating device 1 that keeps the furnace core tube 2 of cleannes in high-temperature process and the stove.
Because furnace core tube main body 5 and arm portion 7 are difficult for being processed as continuous connection, then there is the low problem of productivity ratio of furnace core tube 2 in furnace core tube 2 in its manufacture process.And, formed the furnace core tube 2 of arm portion 7, also exist it to handle inconvenient problem.More because the restriction of processing also can not make arm portion 7 form a plurality of or complicated shape.Can not form the position of inserting the patchhole of thermocouple in the stove owing to the restriction of processing in addition, the situation of a plurality of patchholes of impossible formation is arranged.
Furnace core tube 2 because of the intensity of arm portion 7 parts is low, is worried owing to mechanical shock damages.Therefore, when carrying out regularly cleaning, must be noted that and do not damage arm portion 7 parts.And, when producing thermal deformation or exist under the vacuum state and the gas full state under when having repeatedly mechanical load etc., the problem that also has arm portion of machining shape portion to damage easily from the low furnace core tube main body 5 of mechanical strength to arm portion 7.
The purpose of this invention is to provide a kind of semiconductor-fabricating device that has the high furnace core tube of handling ease and mechanical strength, object being treated is heat-treated.
The present invention heat-treats object being treated to form semi-conductive semiconductor-fabricating device, it is characterized in that: furnace core tube, and its axis direction both ends are opened wide, and form the stove space of accommodating object being treated; The 1st cap, itself and furnace core tube are arranged on axis direction one end of furnace core tube dividually, can fill in axis direction one end of stifled furnace core tube with opening and closing, and form the hole that is communicated with the stove space; The plug that the 2nd cap, itself and furnace core tube are arranged on axis direction the other end of furnace core tube dividually blocks up axis direction the other end of furnace core tube, and forms the hole that is communicated with the stove space.
According to the present invention, utilize the 1st cap under the state of axis direction one end of opening wide furnace core tube, object being treated is accommodated in the stove space.Then, utilize the axis direction both ends of the stifled furnace core tube of the 1st cap and the 2nd cap plug, heat-treat the object being treated of accommodating in the stove space in the sealed furnace space.Utilize the hole that is arranged on the 1st cap and the 2nd cap again, will be used for heat treated medium and flow into the stove space, object being treated is heat-treated at predetermined treatment state.
Because the 1st cap and the 2nd cap are what to separate with furnace core tube, then can make each lid and furnace core tube in different operations.Like this, the 1st cap and the 2nd cap compare with the existing situation that directly forms the hole on furnace core tube, even complicated shape is also made easily and correctly.
And owing at each cap the hole is set respectively, then furnace core tube needn't be provided with arm portion in the end at furnace core tube as prior art.Remove arm portion, also just removed the part that furnace core tube stress is concentrated, can improve the mechanical strength of furnace core tube.Can easily carry out the processing of furnace core tube.
Furnace core tube is selected the heat treated material that is suitable for object being treated, for example high-purity quartz for use.Because each cap is positioned at the position of leaving from the object being treated of accommodating, then each cap is very little to the influence of object being treated, and the heat of each cap acceptance is less than the heat of furnace core tube acceptance.Therefore, compare with furnace core tube, selectable material is more, can make of the materials such as stainless steel processing easily than furnace core tube material.Owing to adopt to be easy to material processed and to make cap, even under then many, the hole shape complicated situation, also can correctly form the hole in hole count.
According to the present invention, owing to, therefore can form the hole of a plurality of holes and complicated shape not at furnace core tube but in other cap formation hole.For example except the hole of supply gas in stove, also can easily process to measure and use the hole, can form the semiconductor-fabricating device of the shape of corresponding object being treated and each processing.Owing to only need have the furnace core tube of the simple shape that does not form the hole, then can reduce the expense of processing furnace core tube.And, with the furnace core tube comparison of prior art, improved the intensity of furnace core tube, can prevent when the processing such as transporting, assemble and clean of semiconductor-fabricating device that furnace core tube from damaging.
The invention is characterized in: measure the temperature measurement component of stove space temperature, be set to insert logical the 2nd cap.
According to the present invention, because it is not 2nd cap integrally formed with furnace core tube that the temperature measurement component that is provided with is inserted logical, so reduced the restriction in the processing, can be easily and correctly the formation temperature components of assays insert logical inserting hole, can accurately be determined at the medium temperature of position in the predetermined stove.Therefore, can accurately carry out the temperature treatment and the interior temperature control of stove of object being treated, improve processed semi-conductive quality.Object being treated is accommodated the stove space from axis direction one end of furnace core tube, after heat treatment finishes, take out from the stove space by axis direction one end of furnace core tube again, the temperature measurement component of inserting logical the 2nd cap setting can not hinder accommodating and taking out of object being treated, what can successfully keep object being treated accommodates and takes out action, measures temperature.
According to the present invention, owing to utilize temperature measurement component can be determined at the medium temperature of predetermined stove locus,, improve the semi-conductive quality of making so the temperature in stove space can be adjusted to correct temperature conditions, improve rate of finished products, and reduce the semi-conductive cost of making.
The invention is characterized in that it has: the components of assays containment member that seals the gap between the 2nd cap and the temperature measurement component; The cooling components of assays seals cooling-part with the components of assays of containment member.
According to the present invention, seal gap between the 2nd cap and the temperature measurement component with containment member by components of assays.Can improve the leak tightness in stove space.Like this, can prevent from also can prevent to drain to outside the stove space at the medium that the stove space is full of from invading the unwanted impurity of heat treatment to the stove space between the 2nd cap and the temperature measurement component.And,, then can prevent to be heated to more than the heat resisting temperature because components of assays is utilized the cooling of components of assays sealing cooling-part with containment member.Even the 2nd cap is heated, because components of assays is cooled with containment member, also needn't make the 2nd cap away from heating source, then can reduce the axis direction size of furnace core tube.
According to the present invention, be cooled with containment member by components of assays, can prevent that then components of assays is heated to more than the heat resisting temperature with containment member.Like this, can keep the sealing of the 2nd cap and temperature measurement component, prevent the treatment conditions change.And, owing to reduced the axis direction size of furnace core tube, the stove space is dwindled, the short time can make the temperature and pressure in stove space reach predetermined value.Therefore, can increase the semiconductor of average unit interval manufacturing.Owing to reduced the axis direction size of furnace core tube, also can make the semiconductor-fabricating device miniaturization.
The invention is characterized in: be formed for cooling off described components of assays at the 2nd cap and cool off the components of assays sealing cooling flowing path that refrigerant flows with the components of assays sealing of containment member; Described components of assays sealing cooling-part flows the agent of components of assays sealing cooling refrigeration in components of assays sealing cooling flowing path.
According to the present invention, utilize components of assays sealing cooling-part, in the components of assays sealing cooling flowing path that the 2nd cap forms, flow cooling components of assays containment member by making components of assays sealing cooling medium.Owing to utilize the components of assays sealing cooling flowing path that forms at the 2nd cap to cool off, then can cool off the components of assays containment member more reliably from the inside of the 2nd cap.
The invention is characterized in: components of assays sealing cooling flowing path utilizes 1 path, is communicated with the supply port of supplying with the agent of components of assays sealing cooling refrigeration and the outlet of discharging the agent of components of assays sealing cooling refrigeration.
According to the present invention, supply with the outlet that components of assays seals the supply port of cooling refrigeration agent and discharges the agent of components of assays sealing cooling refrigeration because components of assays sealing cooling flowing path utilizes 1 path to be communicated with, then the agent of components of assays sealing cooling refrigeration seals in the cooling flowing path in components of assays with not being detained and flows.Like this, cooling refrigeration agent and components of assays can more effectively be carried out with the heat exchange between the containment member, can cool off the components of assays containment member more reliably.
The invention is characterized in that it also has: the furnace core tube containment member in the gap between sealing furnace core tube and the 2nd cap; The furnace core tube sealing cooling-part of the effective containment member of cooling combustion chamber.
According to the present invention and since utilize furnace core tube with containment member by the gap between sealing the 2nd cap and the furnace core tube, then can improve the leak tightness in stove space.Therefore, can prevent from also can prevent to drain to outside the stove space at the medium that the stove space is full of from invading the unwanted impurity of heat treatment to the stove space between the 2nd cap and the furnace core tube.And, because furnace core tube seals the cooling-part cooling with containment member by furnace core tube, so can prevent to be heated to more than the heat resisting temperature.Even the 2nd cap is heated, because furnace core tube is cooled with containment member, also needn't make the 2nd cap away from heating source, then can reduce the axis direction size of furnace core tube.
According to the present invention,, can prevent that then furnace core tube is heated to more than the heat resisting temperature with containment member because furnace core tube is cooled with containment member.Like this, can keep the sealing of the 2nd cap and furnace core tube, prevent the treatment conditions change.And, owing to reduced the axis direction size of furnace core tube, dwindled the stove space, then can reach predetermined value at the temperature and pressure in chien shih stove space in short-term.Therefore, increased the semiconductor of average unit interval manufacturing.Owing to reduced the axis direction size of furnace core tube, then can make the semiconductor-fabricating device miniaturization.
The invention is characterized in:, be formed for cooling off the furnace core tube sealing cooling flowing path that described furnace core tube flows with the furnace core tube sealing cooling refrigeration agent of containment member at the 2nd cap; Described furnace core tube sealing cooling-part flows the agent of furnace core tube sealing cooling refrigeration in furnace core tube sealing cooling flowing path.
According to the present invention, utilize furnace core tube sealing cooling-part to make the agent of furnace core tube sealing cooling refrigeration in the furnace core tube sealing cooling flowing path that the 2nd cap forms, flow the effective containment member of cooling combustion chamber.Owing to cool off the effective containment member of combustion chamber by the furnace core tube sealing cooling flowing path that forms at the 2nd cap from the inside of second cap, then can cool off more reliably.
The invention is characterized in: furnace core tube sealing cooling flowing path utilizes 1 path to be communicated with and supplies with the outlet that furnace core tube seals the supply port of cooling refrigeration agent and discharges the agent of furnace core tube sealing cooling refrigeration.
According to the present invention, because furnace core tube sealing cooling flowing path utilizes 1 path connection to supply with the supply port of furnace core tube sealing cooling refrigeration agent and discharges the outlet that furnace core tube seals the cooling refrigeration agent, then furnace core tube sealing cooling refrigerant flows in furnace core tube sealing cooling flowing path with not being detained.Therefore, cooling refrigerant and furnace core tube can carry out effectively with the heat exchange between the containment member, cool off the effective containment member of combustion chamber more reliably.
The invention is characterized in: furnace core tube forms on axis direction to consistent perpendicular to the section shape of axis direction.
According to the present invention, owing to the section shape of furnace core tube perpendicular to axis direction forms on axis direction to consistent.Then dwindle the situation ratio that forms taper and be easier to processing with axis direction one end as prior art.And the processing when cleaning furnace core tube is also easy.Further improved intensity,, can prevent that also furnace core tube from destroying even when applying the treatment process of the mechanical load that carries out vacuum state and gas full state repeatedly.
The invention is characterized in: described heat treatment is annealing in process.
The invention is characterized in: described heat treatment is to carry out electrode material and semi-conductive alloying, is used to guarantee ohmic contact and the Alloying Treatment that heats object being treated.
The invention is characterized in: described heat treatment is the semiconductor DIFFUSION TREATMENT of adding impurity.
The invention is characterized in: described heat treatment is based on epitaxially grown film and generates processing.
Description of drawings
Purpose of the present invention, characteristic and advantage can be clearer and more definite from following detailed description and accompanying drawing.
Fig. 1 is the profile of the semiconductor-fabricating device 20 of expression one embodiment of the invention;
The semiconductor-fabricating device 20 that Fig. 2 [A] expression is seen from the II-II hatching of Fig. 1, Fig. 2 [B] are the profiles of the comparative example of other semiconductor-fabricating device of expression;
Fig. 3 is the profile of the existing semiconductor-fabricating device 1 of expression.
Embodiment
Below with reference to accompanying drawing, describe embodiments of the invention in detail.
Fig. 1 is the profile of the semiconductor-fabricating device 20 of expression one embodiment of the invention.Semiconductor-fabricating device 20 be in inert gas environment such as nitrogen and argon gas for example or reducibility gas environment such as hydrogen in, semiconductor wafer 24 is carried out the heating furnace of high-temperature process, adopt annealing in process.Through the semiconductor wafer 24 of annealing in process, eliminated lattice defect, its crystallinity is restored.
Semiconductor-fabricating device 20 has: axis direction both ends 22,23 are opened wide, and form the furnace core tube 21 in the stove space 29 of accommodating semiconductor wafer 24; With furnace core tube 21 be arranged on dividually furnace core tube 21 axis direction A1 one end 22, can fill in an end 22 of stifled furnace core tube 21 with opening and closing and form the 1st cap 26 in the 1st hole 25 that is communicated with stove space 29; Be arranged on A2 the other end 23 of axis direction the opposing party of furnace core tube 21, the other end 23 of the stifled furnace core tube 21 of plug and the 2nd cap 28 in the 2nd hole 27 that formation is communicated with stove space 29 dividually with furnace core tube 21.
Furnace core tube 21 forms on axis direction to consistent straight cylindrical perpendicular to the section shape of axis direction, can accommodate a plurality of semiconductor wafers 24 in furnace core tube 21.At the peripheral part of furnace core tube 21, configuration is as the heater 30 of heater block.Semiconductor wafer 24 in the heater 30 heating furnace core tubes.Furnace core tube 21 has the few high-purity quartz of dysgenic sodium tenor to constitute by the performance to heat treated semiconductor wafer 24.
The 1st cap 26 has: the hole that forms ring-type forms member 31; Form ring flange member 32 discoideus, that the plug plug-hole forms an end 31a of member 31; Be arranged on the 1st containment member 33 that the hole forms between member 31 and the ring flange member 32, is used for the gap between closed hole formation member 31 and the ring flange 32.The 1st containment member 33 is realized by for example O RunddichtringO.
Be provided with at furnace core tube 21: around the full week and fixing ring-type the 1st chimeric member 34 of furnace core tube 21 peripheral parts; Be configured in axis direction one side A1 from the 1st chimeric member 34, around the full week and chimeric ring-type the 2nd containment member 35 of furnace core tube 21 peripheral parts.The 1st chimeric member 34 stops with chimeric the 2nd containment member 35 of furnace core tube 21 and moves to axis direction the opposing party A2.The 2nd containment member 35 forms member 31 by the 1st chimeric member 34 and hole and clamps, and as to using containment member between furnace core tube the 1st cap that seals between furnace core tube 21 and the 1st cap 26, available for example O RunddichtringO is realized.
The hole forms member 31, and interior perimembranous and the furnace core tube peripheral part of the other end 31b of axis direction opposite side are chimeric.Form an end 31a of member 31 in the hole of axis direction one side, not with the chimeric ground of furnace core tube peripheral part to stove space 29, and form the 1st hole 25 that inserting hole more than 1 forms the radial direction of member 31.The 1st hole 25 is communicated with stove space 29, and the environmental gas that formation will be full of in the stove space is discharged to the outer stream of stove.
The hole of axis direction opposite side forms the end face and the 2nd containment member 35 butts of member 31.The 2nd containment member 35 is formed with holes member 31 and the 1st chimeric member 34 is clamped, and utilizes strain, and closed hole forms the gap between member 31 and the furnace core tube 21.
Ring flange member 32 forms member 31 with respect to the hole and releasably forms.Form the state that member 31 unloads from the hole at ring flange member 32, ring flange member 32 deviates from the hole and forms member 31, and stove space 29 is opened wide at axis direction A1.Be installed in the state that the hole forms member 31 at ring flange member 32, flange part 32 forms member 31 arranged coaxial with the hole, and it is close to form member 31 to the hole, in the stifled stove space 29 of the axis direction A1 of furnace core tube 21 plug.Because ring flange member 32 forms member 31 near the hole, be arranged on the 1st containment member 33 strains between ring flange member 32 and the hole formation member 31, closed hole forms the gap between member 31 and the ring flange member 32.
The 2nd cap 28 has: the ring part 37 that forms ring-type; The cover part 38 of the other end of the axis direction of the stifled ring part 37 of plug.The 2nd cap 28 is set to one with ring part 37 and cover part 38, and what form that an end 36a opens wide has a short tubular in the end.The 2nd cap 28 is made of metals such as for example stainless steels.
On furnace core tube 21, retainer ring is around full week of furnace core tube 21 peripheral parts and chimeric ring-type the 2nd chimeric member 39, at axis direction A2 full week and chimeric ring-type the 3rd containment member 40 around furnace core tube 21 peripheral parts is set from the 2nd chimeric member 39.The 2nd chimeric member 39 stops the 3rd containment member 40 to move to a side A1 of axis direction.The 3rd containment member 40 is to furnace core tube the 2nd cap containment member that seals between furnace core tube 21 and the 2nd cap 28, and available for example O RunddichtringO is realized.
The interior perimembranous and the furnace core tube peripheral part of one end 57 of axis direction one side of ring part 37 are chimeric.In the other end 42 of the ring part 37 of axis direction opposite side, not chimeric with the furnace core tube peripheral part, form more than one radial direction and insert the 2nd logical hole 27 in ring part 37.The 2nd hole 27 is communicated with stove space 29, forms environmental gas is imported stream in the stove space.
The end face of the ring part 37 of axis direction one side and the 3rd containment member 40 butts.The 3rd containment member 40 is clamped by ring part 37 and the 2nd chimeric member 39, utilizes strain, the gap between sealing ring thing part 37 and the furnace core tube 21.
Furnace core tube 21 forms the boat 41 that can accommodate a plurality of support semiconductor wafers 24.In semiconductor-fabricating device 20, be arranged on the stove space and transport the moving-member 42 of semiconductor wafer 24.Moving-member 42 has: produce genemotor, the drive division of actuating forces such as oil pressure actuator; The actuating force of drive division generation is delivered to the hook stick 43 of boat 41.Hook stick 43 is connected the drive division that is configured in outside the stove space with the boat 41 that is configured in stove space 29, can move boat 41 at axis direction, and boat 41 is transported in the temperature position of predetermined temperature in keeping stove.
Hook stick 43 is inserted logical ring flange member 32 at axis direction, and ring flange 32 forms hook stick 43 and slidably inserts logical inserting hole 54.The 4th containment member 45 in the gap between seal operation rod 43 and the inserting hole 54 is set at the 1st cap 26.The 4th containment member 45 is realized by for example O RunddichtringO.
Semiconductor-fabricating device 20 has a plurality of thermocouples 44 as temperature measurement component.Thermocouple 44 utilizes when connecting the top of dissimilar metals, if produce temperature difference produces peculiar electromotive force between metal phenomenon at its two ends, according to this emf measurement temperature.Thermocouple 44 is determined at the temperature of the environmental gas that is full of in the stove space 29.Cover part 38 at the 2nd cap 28 is formed on the through hole 55 that axis direction connects, and thermocouple 44 is inserted logical through hole 55, extends to outside the stove space in the stove space.
Through hole 55 is provided with respectively at each thermocouple 44.Thermocouple 44 is configured according to the allocation position of the semiconductor wafer 24 of accommodating in stove space 29.If the semiconductor wafer of being supported by boat 41 24 is when the axis direction of furnace core tube 21 is arranged side by side, under the radial direction B of furnace core tube 21 situation arranged side by side, thermocouple 44 is arranged side by side at the radial direction B of furnace core tube 21.At the 2nd cap 28, be provided as the 5th containment member 46 that the components of assays that seals between thermocouple 44 and the through hole 55 is used containment member.The 5th containment member 46 is realized by for example O sealing ring.
Described each containment member 33,35,40,45,46, deterioration when surpassing the heat resisting temperature use can not obtain enough sealings sometimes., use below heat resisting temperature in order to make each containment member 33,35,40,45,46, semiconductor-fabricating device 20 also has the cooling-part 47 of each containment member of cooling for this reason.
At the 2nd cap 28, be formed for cooling off the mobile cooling flowing path of cooling refrigeration agent of the 3rd containment member 40 and the 5th containment member 46 respectively.The cooling refrigeration agent is a cooling water for example.Cooling-part 47 has: the pump portion that cooling water is flowed in cooling flowing path; The cooling end of cooling cooling water; Form the supply cooling water pipe of supplying with the cooling water stream at the 2nd cap 28; The discharge cooling water pipe of cooling water stream is discharged in formation from the 2nd cap 28.
Cooling-part 47 utilizes pump portion that the cooling water by the cooling end cooling is flowed in supplying with cooling water pipe, delivers to the supply port of the 2nd cap 28.Cooling water flow to cooling flowing path from supply port, in the flowing of cooling flowing path, capture the 2nd cap 28 and with the heat of each containment member 40,46 of the 2nd cap butt, flow to outlet.Cooling-part 47 makes the flow of cooling water that arrives outlet to discharging cooling water pipe.The cooling water that flows in discharging cooling water pipe is cooled off by cooling end, supplies with the 2nd cap 28 once more.
Fig. 2 A represents that the semiconductor-fabricating device 20 seen from the II-II hatching of Fig. 1, Fig. 2 B are the profiles of the comparative example of another semiconductor-fabricating device of expression.At the 2nd cap 28,,, form furnace core tube sealing cooling flowing path 48 as the flow of cooling water of furnace core tube sealing cooling refrigeration agent in the position of ring part 37 inner and close the 3rd containment members 40 in order to cool off the 3rd containment member 40.
With reference to Fig. 2 A, be formed with: the supply port 49 of supplying with cooling water in ring part 37; Discharge the outlet 50 of cooling water; The furnace core tube sealing cooling flowing path 48 that is communicated with supply port 49 and outlet 50 by 1 path.Furnace core tube sealing cooling flowing path 48 extends at Zhou Fangxiang along the periphery of the 3rd containment member 40, covers the 3rd containment member 40.
Utilize cooling-part 47, cooling water begins to cool down from the temperature of the environmental gas that is full of the stove space, supplies with supply port 49.Because furnace core tube sealing cooling flowing path 48 is to be communicated to outlet by 1 path from supply port 49, then cooling water does not have branch ground to flow on 1 path.
The stream that comparative example is represented shown in Fig. 2 B has: cooling water is divided into 2 component 51; The interflow part 52 that the cooling water of branch collaborates once more, cooling water flow in 2 paths.At this moment, flow in the path of cooling water in tributary circuit, and cooling water does not flow in another path in tributary circuit, then in immobilising another path of cooling water, heat is easy to accumulate, and cooling water has the danger that becomes high temperature evaporation.Therefore, can not fully cool off near the containment member part in another path sometimes.
The cooling flowing path of present embodiment shown in Fig. 2 A is formed by 1 path, and cooling water does not flow with being detained, discharges from outlet before cooling water becomes high temperature.Therefore, when disposing containment member near the path, cooling water can not become high temperature, reliably the coolant seal member.
In order to cool off the 5th containment member 46, be provided as the components of assays sealing cooling flowing path 56 of the flow of cooling water of components of assays cooling refrigeration agent in cover part 37.Components of assays is also the same with described furnace core tube sealing cooling flowing path 48 with sealing cooling flowing path 56, utilizes 1 path, is communicated to outlet from supply port, and cooling water does not flow with being detained, discharges from outlet before cooling water becomes high temperature.Components of assays forms respectively in each components of assays with sealing cooling flowing path 56.
Equally, be used for cooling settings at the 1st containment member the 35, the 2nd containment member 33 of the 1st cap 26 and the cooling flowing path (not shown) of the 4th containment member 45, also can form at the 1st cap 26, cooling-part 47 can be supplied with cooling water the cooling flowing path that forms at the 1st cap 26.
When semiconductor wafer 24 carried out annealing in process, at first semiconductor-fabricating device 20 made the flange part 32 of the 1st cap 26 deviate from the hole and forms member 31, in axis direction A1 open furnace space 29.Semiconductor-fabricating device 20 utilizes moving-member 42 then, and at axis direction A1 side shifting hook stick 43,29 take out boat 41 from the stove space.When semiconductor-fabricating device 20 makes more than 24 of semiconductor wafers side by side at the boat 41 that takes out, utilize moving-member 42, at axis direction A2 side shifting hook stick 43, the institute's allocation in the stove space 29 that can keep predetermined temperature inserts boat 41.
Then, semiconductor-fabricating device 20 makes the flange part 32 of the 1st cap 26 form member 31 and sealed furnace space 29 near the hole.After stove space 29 is airtight, when supplying with the environmental gas of reducing gass such as inert gas such as nitrogen and argon gas or hydrogen from the 1st hole 27, discharge from the 2nd hole 25, make environmental gas in the stove space to axis direction one side flow, the gas that is full of in the displacement stove.Semiconductor-fabricating device 20 flows by making described environmental gas, reduces in the furnace core tube that heat treatment is produced the impurity of bad influence, keeps clean in the furnace core tube.At this moment, semiconductor-fabricating device 20 owing to utilize each containment member 33,35,40,45,46 to seal gap outside stove space and the stove space, can prevent that then impurity from sneaking into.
When the environmental gas in the displacement furnace core tube finishes, with heater 30 heating semiconductor wafers 24.Semiconductor wafer 24 is configured in predetermined soaking zone and carries out the certain hour heating.The soaking zone is the axis direction length that can be heated to predetermined temperature by heater 30, the long zone that is comprised of promptly so-called soaking.
Semiconductor-fabricating device 20, owing to a plurality of thermocouples 44 are configured in side by side the radial direction of furnace core tube 21, temperature, the temperature treatment of the semiconductor wafer 24 in handling and the control of the temperature of stove space temperature in the stove space of measuring according to these a plurality of thermocouples 44 29.Because a plurality of thermocouples 44 are arranged side by side with each semiconductor wafer 24, according to the temperature that thermocouple 44 is measured, control heater 30 can carry out temperature control at each semiconductor wafer 24.
Because each density member 33,35,40,45,46 is by cooling-part 47 coolings, even then high temperature appears in the stove space temperature, the temperature of each containment member 33,35,40,45,46 can not surpass heat resisting temperature yet, can fully keep the sealing in stove space 29.
By at condition of high temperature heating semiconductor wafer 24, take out eliminated the semiconductor lattice defective and recovered crystalline semiconductor wafer after, finish annealing in process.In the annealing in process, handle relatively with semiconductor oxide, needn't require cleaning in the stove, utilize described containment member 33,35,40,45,46 sealed furnace spaces 29, cleanliness factor in the stove can be remained on and can not produce bad effect, obtain the semiconductor of reliable quality quality.
Furnace core tube 21 is selected the high-purity quartz material that is fit to semiconductor wafer 24 heat treatment materials for use.Because each cap 26,28 is positioned at the position of leaving the semiconductor wafer 24 of accommodating, then the influence of 26,28 pairs of semiconductor wafers 24 of each cap is less, and the heat of each cap 26,28 acceptance is less than the heat of furnace core tube 21 acceptance.Therefore, compare with furnace core tube 21, selectable material is more, and the materials such as stainless steel that can be easy to process with the material than furnace core tube 21 are realized.Owing to make each cap 26,28,, make each cap 26,28 even under then many, the hole shape complicated situation, also the hole can be formed correctly in hole number with being easy to material processed.
As mentioned above, according to semiconductor-fabricating device 20 of the present invention, form furnace core tube 21 and each cap 26,28 respectively, then adopt the simple shape furnace core tube 21 of straight cylindrical, the semiconductor device 20 that forms the 1st hole 25 and the 2nd hole 27 can be constituted, semiconductor-fabricating device 20 can be made easily.And and by prior art processing quartzy system furnace core tube and the situation that forms arm relatively, processing can form the hole of complicated shape by each cap 26,28 that metals such as stainless steel form.Also form easily and measure with inserting hole etc.For example, can dispose a plurality of temperature treatment and temperature controlled thermocouples 44 of carrying out, obtain the more accurate temperature information of a plurality of semiconductor wafers 24.Therefore, heat-treat, also can carry out temperature treatment, measure a plurality of semiconductor wafers 24 well each semiconductor wafer 24 even accommodate in stove space 29 under the state of a plurality of semiconductor wafers 24.Like this, can improve the rate of finished products of processed semiconductor wafer 24, reduce semi-conductive manufacturing cost.
At each cap 26,28 hole 25,27 is set, the section shape that the shape of furnace core tube 21 can be formed perpendicular to axis direction is consistent straight cylindrical.Therefore, the furnace core tube comparison with prior art can form simple shape, has reduced the manufacturing cost of furnace core tube.And, because furnace core tube 21 does not form the hole, can eliminate because of forming the hole and on furnace core tube 21, produce the place that stress is concentrated, can improve the intensity of furnace core tube 21.Therefore, when cleaning furnace core tube 21, can prevent that furnace core tube 21 from damaging.And, owing to be simple shape, then clean operation easily.Even in the treatment process that applies the such repeatedly mechanical load of vacuum state and gas full state,, can prevent that then furnace core tube 21 from damaging owing to there is not stress raiser.
Each containment member 33,35,40,45,46 has flexible and elasticity, is made of for example fluorubber.Each containment member 33,35,40,45,46 leads to gap outside the stove by sealing respectively from the stove interpolation, thereby the machining accuracy of each cap 26,28 of processing can reduce, even under the stove interpolation is led to gap formation situation outside the stove, also can keep the seal in the stove reliably.
Semiconductor-fabricating device 20 is by utilizing each containment member 33,35,40,45,46 of cooling-part 47 cooling, and it is unusual to prevent that then each containment member 33,35,40,45,46 is heated to heat resisting temperature.The sealing that therefore, can keep each cap 26,28 and furnace core tube 21.And, because each containment member 33,35,40,45,46 is cooled, then needn't make each containment member 33,35,40,45,46 away from heater 30, each cap 26,28 can be configured in position near heater 30.Just, can shorten the soaking length of furnace core tube 21, reduce the axis direction size.By reducing the size of furnace core tube 21.Stove space 29 is diminished, and the shorter time of usefulness reaches the treatment temperature and the processing pressure in stove space, can increase the semiconductor of average unit interval manufacturing.
Described semiconductor-fabricating device 20 only is the example of invention, can change its formation within the scope of the invention.Described embodiment represents to be used for the semiconductor-fabricating device 20 of annealing in process, but also can be used for the processing beyond the annealing in process.For example, carry out the alloying of electrode material and semi-conducting material,, can adopt the Alloying Treatment of heating object being treated in order to ensure ohmic contact.And, can also adopt the semiconductor DIFFUSION TREATMENT of adding impurity, epitaxially grown film generates processing etc.
And, for example, in described embodiment, extend to form each hole 25,27 at radial direction respectively at each cap 26,28, also can a plurality of holes be set in other directions extensions such as axis directions.Each cap 26,28 can form the cap with complicated shape by with the stainless steel geometric ratio furnace core tube 21 metal formation of processing easily.The object being treated of heat-treating as semiconductor wafer, also can be made semiconductor with other object being treateds.
The present invention, only otherwise break away from its spirit or principal character, can be with various forms enforcements.Described embodiment is example only, and scope of the present invention is shown in the claim scope, to the specification text without any constraint.Belong to the claim scope distortion and the change all within the scope of the invention.
Claims (13)
1. a semiconductor-fabricating device is heat-treated object being treated, forms semiconductor, it is characterized in that: it comprises,
Furnace core tube (21), its axis direction both ends (22,23) are opened wide, and form the stove space (29) of accommodating object being treated (24);
The 1st cap (26), itself and furnace core tube (21) are arranged on axis direction one end (22) of furnace core tube (21) dividually, can fill in axis direction one end (22) of stifled furnace core tube (21) with opening and closing, form the hole (25) that is communicated with stove space (29);
The 2nd cap (28), itself and furnace core tube (21) are arranged on axis direction the other end (23) of furnace core tube (21) dividually, and axis direction the other end (23) of the stifled furnace core tube (21) of plug forms the hole (27) that is communicated with stove space (29).
2. semiconductor-fabricating device as claimed in claim 1 is characterized in that:
The temperature measurement component (44) of measuring stove space (29) temperature is set to insert logical the 2nd cap (28).
3. semiconductor-fabricating device as claimed in claim 2 is characterized in that: also comprises,
Seal the components of assays containment member (46) in the gap between the 2nd cap (28) and the temperature measurement component (44);
The cooling components of assays seals cooling-part (47) with the components of assays of containment member (46).
4. semiconductor-fabricating device as claimed in claim 3 is characterized in that:
Be formed for cooling off the components of assays sealing cooling flowing path (56) that described components of assays flows with the components of assays sealing cooling refrigeration agent of containment member (46) at the 2nd cap (28);
Described components of assays sealing cooling-part (47) makes the agent of components of assays sealing cooling refrigeration seal in the cooling flowing path (56) in components of assays and flows.
5. semiconductor-fabricating device as claimed in claim 4 is characterized in that:
Components of assays sealing cooling flowing path (56) is communicated with the supply port of supplying with the agent of components of assays sealing cooling refrigeration and the outlet of discharging the agent of components of assays sealing cooling refrigeration by 1 path.
6. semiconductor-fabricating device as claimed in claim 1 is characterized in that: also comprises,
The furnace core tube in the gap between sealing furnace core tube (21) and the 2nd cap (28) containment member (40);
The furnace core tube sealing cooling-part (47) of the cooling effective containment member of combustion chamber (40).
7. semiconductor-fabricating device as claimed in claim 6 is characterized in that:
Be formed for cooling off the furnace core tube sealing cooling flowing path (48) that described furnace core tube flows with the furnace core tube sealing cooling refrigeration agent of containment member (40) at the 2nd cap (28);
Described furnace core tube sealing cooling-part (47) makes the agent of furnace core tube sealing cooling refrigeration seal in the cooling flowing path (48) at furnace core tube and flows.
8. semiconductor-fabricating device as claimed in claim 7 is characterized in that:
Furnace core tube sealing cooling flowing path (48) is communicated with the outlet (50) of the supply port (49) of supplying with the agent of furnace core tube sealing cooling refrigeration and the agent of discharge furnace core tube sealing cooling refrigeration by 1 path.
9. as each described semiconductor-fabricating device of claim 1～8, it is characterized in that:
The section shape perpendicular to axis direction of furnace core tube (21) forms on axis direction to consistent.
10. semiconductor-fabricating device as claimed in claim 1 is characterized in that:
Described heat treatment is annealing in process.
11. semiconductor-fabricating device as claimed in claim 1 is characterized in that:
Described heat treatment is to carry out electrode material and semi-conductive alloying, in order to ensure ohmic contact, and the Alloying Treatment that object being treated is heated.
12. semiconductor-fabricating device as claimed in claim 1 is characterized in that:
Described heat treatment is the semiconductor DIFFUSION TREATMENT of adding impurity.
13. semiconductor-fabricating device as claimed in claim 1 is characterized in that:
Described heat treatment is based on epitaxially grown film and generates processing.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP175905/02 | 2002-06-17 | ||
| JP2002175905A JP2004022817A (en) | 2002-06-17 | 2002-06-17 | Manufacturing apparatus of semiconductor |
| JP175905/2002 | 2002-06-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1484283A CN1484283A (en) | 2004-03-24 |
| CN1233026C true CN1233026C (en) | 2005-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031274935A Expired - Fee Related CN1233026C (en) | 2002-06-17 | 2003-06-17 | Apparatus for mfg of semiconductor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2004022817A (en) |
| CN (1) | CN1233026C (en) |
| TW (1) | TWI233169B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841708B (en) * | 2017-11-28 | 2022-05-31 | 中国科学院半导体研究所 | Semiconductor device and method for manufacturing the same |
-
2002
- 2002-06-17 JP JP2002175905A patent/JP2004022817A/en active Pending
-
2003
- 2003-06-17 TW TW92116396A patent/TWI233169B/en not_active IP Right Cessation
- 2003-06-17 CN CNB031274935A patent/CN1233026C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI233169B (en) | 2005-05-21 |
| TW200405473A (en) | 2004-04-01 |
| JP2004022817A (en) | 2004-01-22 |
| CN1484283A (en) | 2004-03-24 |
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