KR101160268B1 - Apparatus for growing single crystal ingot - Google Patents
Apparatus for growing single crystal ingot Download PDFInfo
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- KR101160268B1 KR101160268B1 KR1020100060407A KR20100060407A KR101160268B1 KR 101160268 B1 KR101160268 B1 KR 101160268B1 KR 1020100060407 A KR1020100060407 A KR 1020100060407A KR 20100060407 A KR20100060407 A KR 20100060407A KR 101160268 B1 KR101160268 B1 KR 101160268B1
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- South Korea
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- single crystal
- crystal ingot
- water cooling
- cooling tube
- crucible
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
Abstract
The present invention relates to a single crystal ingot growth apparatus capable of preventing thermal shock around a water cooling tube installed on an upper portion of the single crystal ingot growth apparatus. The single crystal ingot growth apparatus may include a chamber having an accommodation space therein; A crucible installed in the chamber to receive a silicon melt; A heating element disposed around the crucible to heat the crucible; A water cooling tube for cooling the ingot grown from the silicon melt; A thermal barrier member disposed between the water cooling tube and the growing ingot to surround the end of the water cooling tube to block heat from the crucible from being transferred to the end of the water cooling tube; And a control unit.
According to this configuration, the single crystal ingot growth apparatus includes a heat shield installed around the end of the water cooling tube for cooling the grown single crystal ingot, thereby preventing heat from the crucible from being transferred to the end of the water cooling tube, The end portion of the water cooling tube that receives the most thermal shock is broken by long use, thereby preventing the water circulating inside the water cooling tube from leaking. Therefore, the yield of the single crystal ingot in the single crystal ingot growth apparatus is improved, and the production cost of the single crystal ingot can be reduced.
Description
The present invention relates to a single crystal ingot growth apparatus, and more particularly, to a single crystal ingot growth apparatus capable of preventing thermal shock around a water cooling tube installed on an upper portion of the single crystal ingot growth apparatus.
A wafer widely used as a material for manufacturing a semiconductor device refers to a single crystalline silicon thin film. Such wafers include a slicing process for thinly cutting single crystal silicon ingots in the form of a wafer, a lapping process for improving flatness while polishing to a desired wafer thickness, and removal of a damage layer inside the wafer. It is produced into a wafer through a step such as etching (etching), polishing to improve surface mirroring and flatness, cleaning to remove contaminants on the wafer surface.
Here, the single crystal silicon ingot is generally grown and manufactured according to the Czochralski method. This method is a method of melting polycrystalline silicon in a crucible in a chamber, immersing the seed crystal as a single crystal in the molten silicon, and growing it into a silicon single crystal ingot of a desired diameter while gradually raising it.
1 is a cross-sectional view showing a single crystal ingot growth apparatus for growing a single crystal ingot by the conventional Czochralski method.
The single crystal
In such a single crystal
When the single crystal ingot (I) is grown, crystal defects occur depending on the growth conditions. This crystal defect is closely related to the growth rate of the single crystal ingot I and the temperature gradient at the interface between the silicon component of the silicon melt S and the ingot I. Since crystal defects cause leakage current after being manufactured with a semiconductor chip, and lower the semiconductor manufacturing yield, efforts have been made to suppress the occurrence of crystal defects.
It is important that the growth rate of the single crystal ingot (I) is properly maintained. For this purpose, a water cooling tube (5) through which cooling water is circulated is positioned around the single crystal ingot (I) above the growth chamber (2).
The water cooling tube 5 is usually made of stainless steel, and the cooling water circulates therein. Since the
Accordingly, the present invention has been made in view of the above circumstances, and an object thereof is to provide a single crystal ingot growth apparatus capable of protecting a water cooling tube for cooling an grown ingot installed from a chamber of a single crystal ingot growth apparatus from thermal shock. have.
According to an aspect of the present invention for achieving the above object, a single crystal ingot growth apparatus, the chamber having a receiving space therein; A crucible installed in the chamber to receive a silicon melt; A heating element disposed around the crucible to heat the crucible; A water cooling tube for cooling the ingot grown from the silicon melt; A thermal barrier member disposed between the water cooling tube and the growing ingot to surround the end of the water cooling tube to block heat from the crucible from being transferred to the end of the water cooling tube; Characterized in that it comprises a.
In addition, the heat shield is characterized in that it comprises a ring-shaped member, and a lamp-shaped member laminated on the ring-shaped member and the top open.
In addition, the water cooling tube is characterized in that it is installed to surround the growing ingot.
In addition, the surface of the heat shield is characterized in that the heat reflection coating layer for reflecting heat from the crucible is formed.
In addition, the heat reflection coating layer is characterized in that it contains pyro carbon (Pyro Carbon).
In addition, a heat insulating material for blocking heat transfer between the heating element and the inner wall of the chamber; A heat shield for preventing heat from the crucible from being transferred to the water cooling pipe; It characterized in that it further comprises.
In addition, the chamber includes a body portion, and the lid portion of the upper body portion, wherein the water cooling tube is coupled to the lid portion.
In addition, the thermal barrier material is characterized in that it is formed of graphite.
According to another aspect of the present invention for achieving the above object, a single crystal ingot growth apparatus, the chamber having a receiving space therein; A crucible installed in the chamber to receive a silicon melt; A heating element disposed around the crucible to heat the crucible; A cooling body for cooling the ingot grown from the silicon melt; A thermal barrier member disposed between the cooling body and the growing ingot to surround the end of the cooling body to block heat from the crucible from being transferred to the end of the cooling body; It includes, and the surface of the heat shield is characterized in that the heat reflection coating layer for reflecting heat from the crucible is formed.
In addition, the cooling body is installed to surround the growth of the ingot, the heat shield is characterized in that it comprises a ring-shaped member, and a freshly stacked member on top of the ring-shaped member is open.
According to the present invention, since the single crystal ingot growth apparatus includes a heat shield installed around the end of the water cooling tube for cooling the grown single crystal ingot, heat from the crucible can be prevented from being transferred to the end of the water cooling tube. have. Therefore, the end of the water cooling tube which is subjected to the most thermal shock is damaged by long use, and the water circulating inside the water cooling tube is prevented from leaking, thereby increasing the yield of the single crystal ingot in the single crystal ingot growth apparatus, thereby improving the yield of the single crystal ingot. The production cost can be reduced.
In addition, the heat insulating material provided to surround the water cooling tube of the present invention includes a ring-shaped member and a lamp-shaped member, so that the heat-blocking material can be installed by simply stacking the ring-shaped member and the lamp-shaped member in the chamber, so that heat from the crucible is cooled by water. It can effectively prevent the delivery to the end of the tube. This shortens the working time for installing or removing the thermal barrier material in the chamber, thereby improving productivity.
1 is a cross-sectional view showing a single crystal ingot growth apparatus for growing a single crystal ingot by the conventional Czochralski method.
2 is a cross-sectional view showing a single crystal ingot growth apparatus according to an embodiment of the present invention.
3 is a perspective view showing a heat shield of the single crystal ingot growth apparatus of the present invention.
4 (a) to 4 (c) are diagrams sequentially illustrating a process of installing a thermal barrier material in a chamber of the single crystal ingot growth apparatus of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Here, in adding reference numerals to the elements of each drawing, it should be noted that the same elements are denoted by the same reference numerals as much as possible even if they are shown in different drawings.
2 is a cross-sectional view showing a single crystal ingot growth apparatus according to an embodiment of the present invention. 3 is a perspective view showing a heat shield of the single crystal ingot growth apparatus of the present invention.
Referring to FIG. 2, the single crystal
The
Crucible 120 is installed in the
The
As the
Seed crystals for growing the single crystal ingot I enter the
When the single crystal ingot (I) is grown, crystal defects occur depending on the growth conditions. Such crystal defects are closely related to the growth rate of the single crystal ingot I and the temperature gradient at the interface between the silicon component of the silicon melt S and the single crystal ingot I.
It is important that the growth rate of the single crystal ingot I is properly maintained. For this purpose, the
The
Since the
The
As the material of the
Referring to FIG. 3 as an embodiment of the
The single crystal
The
The
As described above, the single crystal
Hereinafter, referring to FIGS. 4A to 4C, the process of installing the thermal barrier material of the present invention in a chamber will be described.
Referring to FIG. 4A, in a state in which the
Next, referring to FIG. 4B, a
Next, referring to FIG. 4C, the
As described above, the
In the above, the
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention will be.
100: single crystal ingot growth device
110: chamber
111: torso
112: lid portion
120: crucible
130: heating element
140: water cooling tube
150: thermal insulation
151: ring-shaped member
152: shoulder member
153: heat reflection coating layer
160: insulation
170: heat shield
I: monocrystalline ingot
S: Silicone Melt
Claims (5)
A chamber having a receiving space therein;
A crucible installed in the chamber to receive a silicon melt;
A heating element disposed around the crucible to heat the crucible;
A water cooling tube for cooling the ingot grown from the silicon melt;
A thermal barrier member disposed between the water cooling tube and the growing ingot to surround the end of the water cooling tube to block heat from the crucible from being transferred to the end of the water cooling tube;
Single crystal ingot growth apparatus comprising a.
The thermal barrier material comprises a ring-shaped member and a freshly-shaped member stacked on the ring-shaped member and having an open top.
Single crystal ingot growth apparatus, characterized in that the heat reflection coating layer for reflecting heat from the crucible is formed on the surface of the thermal barrier material.
The heat reflection coating layer is a single crystal ingot growth apparatus comprising pyro carbon.
The thermal barrier material is a single crystal ingot growth apparatus, characterized in that formed of graphite.
Priority Applications (1)
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KR1020100060407A KR101160268B1 (en) | 2010-06-25 | 2010-06-25 | Apparatus for growing single crystal ingot |
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KR1020100060407A KR101160268B1 (en) | 2010-06-25 | 2010-06-25 | Apparatus for growing single crystal ingot |
Publications (2)
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KR20120000199A KR20120000199A (en) | 2012-01-02 |
KR101160268B1 true KR101160268B1 (en) | 2012-06-27 |
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KR1020100060407A KR101160268B1 (en) | 2010-06-25 | 2010-06-25 | Apparatus for growing single crystal ingot |
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KR20210089395A (en) * | 2020-01-08 | 2021-07-16 | 에스케이실트론 주식회사 | Apparatus and method for growing silicon single crystal ingot |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007063046A (en) | 2005-08-30 | 2007-03-15 | Toshiba Ceramics Co Ltd | Single crystal pulling apparatus and method for controlling the same |
JP2007290961A (en) | 2001-06-28 | 2007-11-08 | Samsung Electronics Co Ltd | Czochralski puller for manufacturing single crystal silicon ingot |
KR20100042466A (en) * | 2008-10-16 | 2010-04-26 | 주식회사 실트론 | Ingot cooling unit and appratus for growing single crystal ingot |
-
2010
- 2010-06-25 KR KR1020100060407A patent/KR101160268B1/en active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007290961A (en) | 2001-06-28 | 2007-11-08 | Samsung Electronics Co Ltd | Czochralski puller for manufacturing single crystal silicon ingot |
JP2007063046A (en) | 2005-08-30 | 2007-03-15 | Toshiba Ceramics Co Ltd | Single crystal pulling apparatus and method for controlling the same |
KR20100042466A (en) * | 2008-10-16 | 2010-04-26 | 주식회사 실트론 | Ingot cooling unit and appratus for growing single crystal ingot |
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KR20120000199A (en) | 2012-01-02 |
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