TWI233169B - Semiconductor manufacturing device - Google Patents

Abstract

The object of the present invention is to provide a semiconductor manufacturing device having the furnace core tube with a shape easy for machining and with high mechanical strength for heat treatment on the processing object. The semiconductor manufacturing device comprises: the furnace core tube with two opened ends along the axial direction, and formed as a furnace space accommodating the semiconductor wafer; and, two caps having openings connecting to the furnace space formed at two ends in the axial direction of the furnace core tube on the body of the furnace core tube, and sealing one end of the furnace core tube in the axial direction. Because each cap is configured with the furnace core tube body, each cap and the furnace core tube can be manufactured in different steps. Moreover, because there is no need for configuring the manifold at the furnace core tube for forming the openings, the furnace core tube can be easily machined and the strength of the furnace core tube can be improved.

Description

1233169 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a road surface of Hoekku Temple that is suitable for applications such as in an inert gas environment such as nitrogen and argon, or hydrogen, etc. Semiconductor manufacturing equipment for high-temperature treatment of semi-conductive limbs in a gas atmosphere for 9 yen per day, or addition of miscellaneous 7,000-piece limbs &lt; diffusion treatment and thin film generation treatment for growth growth. [Previous technology] In the various steps of manufacturing semiconductors, there are ^ ^ ^ processing methods that store the object to be processed in a heating furnace that is not full of inert gas or reduce the sharp rolling rainbow, such as tempering and Alloy (ALL0YINg) treatment. = High: When the source implants ion implanted ions into the object to be treated, it produces two: Cantonese. For example, when the object to be processed is a single crystal, most lattice defects are formed by μ lattice points. Tempering treatment is to relieve the above-mentioned lattice defects. ## The heat treatment seeks to restore the crystallinity 'and replaces the implanted ion atoms and German atoms with lattice points. In the tempering treatment, it takes a long time W furnace for heating the object to be treated. Tempering treatment can be used in addition to ion cloth 1 to 2 after film forming treatment for growing crystals. Second, = treatment system is used to alloy electrode materials and semiconductors. Make sure that the π pieces formed by the two plates are connected between the connecting element and the external circuit, and occupy the <Im interface, and the heating is treated by the physical material, and an alloy furnace is used. Figure 3 Series The conventional semiconductor device is made of ⑽®®. Semi-manufactured and equipped with a guide-PM :: The heating furnace is equipped with a charge to form and contain a semiconductor f bean Japanese yen 3 3 Furnace core tube 2. Furnace core tube 2 has an open shaft universal end portion 4 and a thin tube, and the spring end of the other end portion 6 is formed into a substantially cylindrical tube.

84577.DOC 1233169 The same shape and the same material. For example, Japanese Patent Laid-Open No. Sho 58_i75828; No. 1 in China 7 has a tempering process using the furnace core tube 2 shown in FIG. 3. In the heat treatment of semiconductor devices, the semiconductor device used for tempering and alloy treatment is important in the temperature management of the object to be treated, but compared with the oxidation treatment of forming an oxide film on the object to be treated, Processing at low temperature ... Compared with oxidation treatment, the cleanliness in the furnace, that is, the mixing of foreign substances in the ambient gas in the furnace, has less influence on the quality of the processed object. It is a semiconductor manufacturing device using a core tube 2 equipped with a high-temperature treatment and cleanliness in the furnace when it is not necessary to strictly manage high-temperature treatments such as tempering and alloy treatment and cleanliness in the furnace. . In the manufacturing process of the core tube 2, it is difficult to connect the core tube body $ to the branch tube portion 7 for processing. There is a door 4 X 'which is called the core tube 2 and has a reduced productivity, forming branch branches. The furnace core tube 2 of 7 also has a problem of so-called inconvenience of use. &Gt; Furthermore, 'the branch tube portion 7 cannot be formed into a complex or complicated shape due to processing restrictions. Also, "the position of the insertion hole into which the thermoelectric pair is inserted into the furnace cannot be formed due to the limitation of processing", and a plurality of insertion holes cannot be formed. In addition, the branch tube portion 7 of the furnace core tube 2 has a low strength and may be damaged due to mechanical impact. ^ When performing regular cleaning, care must be taken not to damage the branch pipe section 7. In addition, there are cases where thermal distortion occurs repeatedly or mechanical loads in a vacuum state and a gas-filled state may easily cause a so-called low-strength furnace core tube body 5 to be applied to the processed shape portion of the branch pipe portion 7 The problem of broken branches.

84577.DOC 1233169 Q And the object of the present invention is to provide a semiconductor manufacturing apparatus provided with a core tube having a shape that is easy to process and has high mechanical strength to heat-treat an object to be processed. The present invention relates to a semiconductor manufacturing device that heat-processes an object to form a semiconductor, and specifically includes a furnace core tube having the following members open at both ends in the axial direction and forming a furnace space for receiving the object; and a furnace core tube The other end is arranged at one end portion of the furnace core tube in the axial direction, and the one end portion of the furnace core tube in the axial direction can be closed and opened. A first cover portion connected with the furnace space is formed, and the other portion is provided separately from the furnace core tube. The other end portion in the axial direction of the furnace core tube closes the other end portion in the axial direction of the furnace core f to form a second cover portion connected to the furnace space. According to the present invention, the object to be processed is accommodated in the furnace space with the first lid portion opening the one end portion in the axial direction of the furnace core tube. Then, both ends of the furnace core tube in the axial direction are closed by the first cover portion and the second cymbal to seal the furnace space, and heat treatment is performed on the object to be stored in the furnace space. Through the openings provided in the first cover portion and the second cover portion, the medium to be used for the heat treatment is caused to flow through the furnace space, and the object to be treated is heat treated in a predetermined treatment state. Since the first cover part and the second cover part are separately provided from the core tube system, each cover body and the core tube can be manufactured in other steps. This allows the first cover portion and the second cover portion to be easily and accurately manufactured in a complicated shape, as compared with the conventional case where an opening is directly formed in the furnace core tube. In addition, since openings are provided in the respective lid portions, it is not necessary to provide a branch tube portion at one end portion of the furnace core tube, as is known in the art. By eliminating the branch tube, the stress concentration part of the furnace core tube disappears, and the furnace core can be improved

84577.DOC 1233169 &amp; mechanical strength. In addition, processing of the furnace core tube can be easily performed. The furnace core tube system is selected for the heat treatment of the material to be processed, such as high and high quartz. Since each crotch portion is located at a position separate from the object to be processed, each cover portion has less influence on the object to be processed, and each cover portion receives less heat than the core tube. Therefore, there are more materials to choose from than the core tube, and it can be realized by using stainless steel and other materials that are easier to process than the core tube material. Each cover portion is realized by a material that is easy to process, and even when the number of openings is plural, the shape of the opening is complicated, and each cover portion can be accurately opened to produce each cover portion. y According to the present invention, since the opening is formed in the cover portion provided separately from the furnace core tube, a plurality of openings and openings with complicated shapes can be formed. For example, in addition to supplying gas to the opening in the furnace, it is easy to process and measure "the semiconductor manufacturing device capable of forming the shape to be processed and the shape of each process" and can be equipped with a simple core furnace tube without openings. , Can reduce the price of processing furnace core tube. Compared with the core tube of the conventional technology, the strength of the core tube can be increased, and the core tube can be prevented from being damaged during the transportation, assembly, and cleaning of the semiconductor manufacturing apparatus. The temperature measuring means for measuring the temperature of the furnace space according to the present invention is inserted in the second lid portion. According to the present invention, since the second lid portion formed by the insertion and the furnace core tube is provided with a temperature measuring means, there are few restrictions on processing, and the insertion hole of the insertion temperature measuring means can be easily and accurately formed. The temperature of the medium located in the pre-baked furnace position was measured. In this way, the μ-degree management of the object to be processed and the temperature control in the furnace are surely performed, so that the quality of the processed semiconductor is improved.

84577.DOC 1233169 The object to be treated is housed in one end of the axial direction of the furnace core tube in the space after the heat treatment is completed. 2 The temperature measuring means of the lid portion does not hinder the storage and removal of the object to be processed, and it can measure the temperature while maintaining the storage and removal of the object to be processed smoothly. In addition, according to the present invention, the temperature of the medium located at a predetermined furnace space can be measured by the temperature measuring means, so the temperature of the furnace space can be adjusted under the correct temperature conditions, and the yield can be improved by improving the quality of the semiconductor. 'Reduce the cost of the semiconductors manufactured. The present invention further includes: a sealing member for a measuring means for sealing the gap between the second cover part and the temperature measuring means; and a sealing means for the cooling means for measuring the cooling member. According to the present invention, the gap between the second cover portion and the temperature measuring means is sealed by the sealing member for the measuring means, so that the tightness of the furnace space can be improved. This can prevent unwanted impurities from invading from between the second cover portion and the temperature measuring means during the heat treatment of the furnace space, and can prevent the medium filled in the furnace space from escaping to the outside of the furnace space. [Because the sealing member for measuring means is cooled by the measuring means sealing cooling means, it is possible to prevent heating to a heat-resistant temperature or higher. In addition, the sealing member for the measuring means can be cooled even if the second cover portion is heated. Therefore, it is not necessary to keep the heating source away from the second cover portion, and the axial dimension of the furnace core tube can be reduced. Further, according to the present invention, the sealing member for the measuring means prevents the sealing member for the foot measuring means from being heated to a heat-resistant temperature or higher by cooling the sealing member. This can maintain the tightness between the second cover portion and the temperature measuring means, and prevent changes in processing conditions. also

84577.DOC -11- 1233169, because the axial dimension of the furnace core tube can be reduced, so the furnace space can be reduced. The temperature and pressure of the furnace space can reach the predetermined value in the competition room. Thereby, the number of semiconductors manufactured per unit time can be increased. X can reduce the size of the furnace core tube in the axial direction, thereby miniaturizing a semiconductor manufacturing apparatus. Also, the present invention forms a sealing means for measuring the cooling means with a measuring means for cooling the above-mentioned measuring means, and sealing the cooling flow path on the second cover part, and the measuring means seals the cooling means to seal the measuring means. The cooled cold coal flows in the sealed cooling flow path in the measuring means. According to the present invention, the cooling means is sealed by the measuring means, and the measuring means seals a cooling flow path formed by the measuring means sealing cooling medium in the P cover portion to cool the sealing member for the measuring means. By the foot measuring means formed by the second cover part, the cooling flow path can be reliably sealed from the second cover part for the cooling section. 'Another' The sealed cooling flow path of the load means of the present invention is a path through which the supply measuring means seals the supply port of the cooled cold coal and the discharge measurement: the discharge port of the cooled cold coal is connected. Youshan 'According to the present invention, the sealing means for cooling the cooling means is connected to the supply port for cooling the cold coal by means of a measuring means, which is connected to the discharging port for cooling the cold coal by the measuring means, so that the measuring means does not cool the cold coal. = Flow is measured by the measuring device's sealed cooling flow path. Thereby, the heat exchange between the cooled coal and the sealing member for the measuring device can be performed efficiently, and the sealing member for the measuring device can be more reliably cooled. In addition, the present invention further includes: a sealing member for the furnace core tube for sealing the door gap between the furnace core tube and the door of the second cover part; and a sealing structure for cooling the furnace core tube.

84577.DOC -12- 1233169 Furnace tube sealing cooling means. According to the present invention, the sealing member for the furnace core tube seals the gap between the second cover portion and the temperature measuring means, thereby improving the tightness of the furnace space. This prevents unwanted impurities from entering between the second cover and the furnace core tube during the heat treatment in the furnace space, and prevents the medium filled in the furnace space from leaking out of the furnace space. In addition, since the sealing member for the furnace core tube is cooled by the furnace core tube sealing cooling means, it is possible to prevent heating to a temperature higher than the heat-resistant temperature. In addition, the sealing member for the core tube can be cooled even if the second cover portion is heated. Therefore, it is not necessary to keep the heating source away from the second cover portion, and the axial dimension of the core tube can be reduced. In addition, according to the present invention, the sealing member for a furnace core tube is prevented from being heated to a heat-resistant temperature or higher by cooling the sealing member for a furnace core tube. Thereby, it is possible to maintain the tightness between the second cover portion and the furnace core tube, and prevent the processing conditions from changing. In addition, since the axial dimension of the furnace core tube can be reduced, the furnace space can be reduced, and the temperature and pressure of the furnace space can be brought to predetermined values in a short time. Thereby, the number of semiconductors manufactured per unit time can be increased. Furthermore, by reducing the axial dimension of the furnace core tube, the semiconductor manufacturing apparatus can be miniaturized. In addition, the present invention forms a furnace core tube sealing cooling flow path for cooling the core tube sealing cooling of the furnace core tube sealing member, and cooling coal flows in the second cover portion, and the furnace core tube sealing cooling means seals the furnace core tube. Cooled cold coal flows in the sealed cooling flow path of the furnace core tube. According to the present invention, the furnace core tube sealing cooling means is used to cause the furnace core tube sealing cooling medium to flow through the furnace core tube sealing cooling flow path formed by the second cover portion to cool the furnace core tube sealing member. The furnace core tube sealing cooling passage formed by the second cover portion can surely cool the furnace core tube sealing member from the inside of the second cover portion. 84577.DOC -13- 1233169 Also, the furnace core tube sealed cooling flow path of the present invention connects the supply port for cooling and cooling coal to the furnace core tube through a path and the discharge port for measuring the cooling cooled coal by the discharge measuring means. . According to the present invention, the furnace core tube sealed cooling flow path connects the supply port for the furnace core tube sealed cooling cold coal with the discharge port for discharging the furnace core tube sealed cooled coal through a path, so that the furnace core tube is sealed to cool the cold coal. Does not stagnate and flows in the furnace-to-response, sealed cooling flow path. Thereby, the heat exchange between the cooling coal cooling furnace core tube sealing member can be efficiently performed, and the sealing member for the furnace core tube can be cooled more reliably. In addition, the core tube system of the present invention is formed in the axial direction in a cross-sectional shape perpendicular to the axial direction. According to the present invention, the furnace core tube is formed in the axial direction like a cross-section well that is perpendicular to the axial direction, which is easier to process than in the case where the conventional technology is concentrated in the axial direction 1 :: the front end is thin. In addition, it is easy to install when cleaning and cutting. In addition, the strength can be improved, and even when the process of applying mechanical loads in a vacuum state and a gas-filled state is applied, the furnace core tube can be prevented from being damaged. In the present invention, the heat treatment is a tempering treatment. In all of the above-mentioned heat treatment, the combination of the electrode material and the semiconductor is performed, and the alloy to be processed is heated to confirm the junction. In the present invention, the above-mentioned heat treatment is a diffusion of a semiconductor to which impurities are added. In the present invention [Embodiment] The above heat treatment is an epitaxial growth thin film formation process

84577.DOC -14. 1233169 The preferred embodiment of the present invention will be described in detail with reference to the following drawings. FIG. 1 is a cross-sectional view of a semiconductor manufacturing apparatus 20 according to an embodiment of the present invention. The semiconductor manufacturing apparatus 20 is a heating furnace for processing the semiconductor wafer 24 at a high temperature in an inert gas environment such as nitrogen or argon or a reducing gas environment such as hydrogen, and is used for tempering. The tempered semiconductor wafer 24 removes lattice defects and restores its crystallinity. The semiconductor manufacturing apparatus 20 is provided with a furnace core tube 21 whose axial ends 22 and 23 are open to form a furnace space 29 for accommodating a semiconductor wafer 24, and the furnace core tube 21 is separately provided in the axial direction of the furnace core tube 21. The one end portion 22 ′ of the one side 8 ′ blocks the one end portion 22 of the furnace core tube 21 in an openable and closable manner, and an i-th opening 25 connected to the furnace space 29 is formed! The cover portion 26 is provided at the other end portion 23 of the furnace core tube 21 in the axial direction of the furnace core tube 21, and the other end portion 23 of the furnace core tube 21 is closed, forming a first portion connected to the furnace space 29. 2 开 27 的 第二 盖 部 28。 2 second cover portion 28. The furnace core tube 21 has a cross-sectional shape perpendicular to the axial direction and is formed in the same straight cylindrical shape in the axial direction. A plurality of semiconductor wafers 24 can be accommodated in the furnace core tube 21. A heater 30, which is a heating means, is arranged on the outer peripheral portion of the furnace core tube 21. The heater 30 is a semiconductor wafer 24 in a heating core tube. The furnace core tube 21 is composed of high-purity quartz containing a small amount of sodium metal that adversely affects the performance of the heat-treated semiconductor wafer 24. The first 26th Shao 26 has: a ring-shaped opening forming member 3; a flange member 3 2 formed at one end 3 1 a of a disk-shaped and closed-end opening forming member 3 1; and provided on the opening forming member 3 1 And the flange member 32, the first of the gap between the seal opening forming member 31 and the flange member 32! Seal member 33. No. 84577.DOC -15-1233169 The member 33 is realized by, for example, an O-ring. The furnace core tube 21 is provided with: a W-shaped joint member 34 that is fixed along the entire periphery of the furnace core tube 21 throughout the entire circumference; arranged in the axial direction _ square 々 on the side of the ρ fitting member 34 and along the furnace The ring-shaped second second sealing member 35 is fitted on the entire periphery of the core tube 21. The first coupling member 34 is used to prevent the W sealing member 35 fitted in the furnace core tube η from moving in the axial direction and the other A2. The first sealing member 35 is held by the first fitting member 34 and the opening forming member 31, and becomes a sealing member between the i-th cover portion of the furnace core tube between the furnace core tube 21 and the first cover portion 26. This is achieved, for example, by a 0-ring. The opening opening / forming member 31 is at the other end of the other side in the axial direction of Kawachichi :: fitting to the outer periphery of the furnace core tube. On the rugged 3 1 a formed by the opening in the axial direction-square side, one or more of the first opening 25 and the radial direction of the opening forming member 31 are formed so as to face the furnace space I9 without being fitted to the outer periphery of the core tube. The furnace space 29 is connected to become a flow path for discharging the iridium gas filled in the second and third furnaces to the outside of the furnace. The end face of the opening forming member 31 on the other side in the axial direction is connected to the city. The second sealing member 35 is held by the opening forming members 31 and 1 rt ^ 34, and the gap between the opening forming member 31 and the furnace core member 21 is sealed by elastic deformation. The flange member 32 is formed to be relatively detachable from the opening forming member 31. 2 = In the state of being removed from the opening forming member, the flange member such as the opening / forming member 31 is reversely separated, so that the furnace space 29 is in the axial direction.乂 Open. In a state where the flange member 32 is attached to the opening forming member 31, the edge member 32 and the opening forming member 31 are arranged to face the opening shape.

84577.DOC -16- 1233169 31 is close to 'closing the furnace space 29 in the axial direction of the core tube 21-square A1. By bringing the flange member 32 closer to the opening forming member 3, the gap between the i-th seal member 33 provided between the flange forming member 32M and the opening forming member 3! Is elastically opened. V * Sealing the opening addition member 3 j and the flange The gap between the members 32. The second solitary portion 28 includes a cover portion 38 that forms a ring-shaped ring portion 37 and closes the other end portion of the ring-shaped portion 37 in the axial direction. The second cover portion 28 is formed by a ring-shaped portion 37 and a cover portion 38 ', and the end portion 36a is open: the same shape. The second cover portion 28 is made of a metal such as stainless steel. Further, the furnace core pipe system is provided with a ring-shaped second fitting member 39 fixedly closed along the entire circumference of the furnace core pipe, and a second coupling member 39 side is arranged on the other side in the axial direction M, and The third garment-sealing member 40 which is fitted along the entire periphery of the core tube 21 around the periphery. The second closing member is used to prevent the third sealing structure: 40 moves in the direction of the axis-square A1. The third sealing member 40 is a sealing member for sealing the furnace core tube between the second and third furnace core tubes, and it is realized by, for example, an O-ring. # ^ 刀 37 系 Axis direction The inner peripheral portion of one end portion 41 on one side is fitted with 1 Ί &amp; outer periphery #. The other portion C of the annular portion 37 on the other side in the axial direction is not fitted to the outer peripheral portion of the furnace core tube to form more than one insert. Pass = the second opening 27 in the radial direction of the garment-shaped Shaofen 37. The top section (3) and the furnace space are connected to each other to become a flow path for introducing ambient gas into the furnace space. (40) The abutment portion of the other side of the side 2 The end face of 37 and the third sealing member ^ 妾 The third and sealing members 40 are formed by the annular portion 37 and the second fitting member 39 ^ The elastic deformation deforms the seal between the annular portion 37 and the furnace core tube 21

84577.DOC -17- 1233169 The furnace core tube 21 is capable of accommodating an opening for supporting a plurality of semiconductor wafers 24. The semiconductor manufacturing apparatus 20 is provided with a moving means 42 for transferring semiconductor wafers 24 in a furnace space. The moving means 42 includes a driving unit that generates a driving force of an electric motor, a hydraulic regulator, and the like, and an operating rod 43 that transmits a driving force from a drive: product to the opening 41. The operating rod 43 connects the driving portion arranged outside the furnace chamber with the opening 4 丨 arranged in the furnace space 29, so that the opening 41 can be moved in the axial direction, and the opening 4 can be transported at a temperature position where the predetermined temperature is maintained in the furnace. 1. The operating rod 43 is inserted into the flange member 32 in the axial direction. The flange member 32 slidably forms an insertion hole 54 through which the operating rod 43 is inserted. The first cover portion 26 is provided with a fourth sealing member 45 for sealing a gap between the operation rod 43 and the insertion hole ". The fourth sealing member 45 is implemented by an O-ring. The semiconductor manufacturing apparatus 20 includes a plurality of The temperature measurement method is the thermoelectric pair 44. The thermoelectric pair 44 uses the phenomenon that the temperature difference between the two sakis and the unique power generation between the metals are generated when the front ends of different metals are connected, and the temperature is measured based on the electrical power. Thermoelectricity The temperature of the ambient gas filled in the furnace space 29 was measured for the 44 series. The cover part 38 of the second cover part 28 was formed with a through-hole 55 penetrating in the axial direction, and the thermoelectric pair 44 was inserted through the through-hole 55 and The outside of the furnace space extends into the furnace space. The through-holes 55 are individually provided for each thermoelectric pair 44. The thermoelectric material is arranged according to the arrangement position of the semiconductor wafer 24 accommodated in the furnace space 29. For example, the opening supported by the opening 41 When the semiconductor wafer 24 is aligned with the axial direction of the furnace core tube 21 and is aligned with the radial direction b of the furnace core tube 21, the thermoelectric pair 44 is aligned with the radial direction b of the furnace core f 21. Also, the second cover portion 28 System settings useful

84577.DOC -18- 1233169: A sealing member for measuring means between the thermoelectric pair 44 and the through hole 55 and a fifth sealing member 46 ° The fifth sealing member 46 is realized by an O-ring. Each of the sealing members 33 and 35 described above will deteriorate in quality and will be used. Therefore, the semiconductor manufacturing apparatus 20-series cooling means 47 is used so that the temperature of each sealing structure is lower than the heat-resistant temperature. If 40, 45, and 46 exceed the heat-resistant temperature, sufficient sealing properties may be obtained. The members 33, 35, 40, 45, and 46 provided for cooling the respective sealing members are respectively formed in the 28 series lower than 罘 2 Gao Shao: using the cooling cooling to cool the third sealing member rolling and the fifth starting and sealing member 46. Cooling flow path for coal flow. Cooling cold coal series such as cooling water. The cooling means 47 is provided with a pump 胄 which flows cooling water in a cooling flow path, a cooling section for cooling the cooling water, a supply cooling pipe having a flow path for supplying cooling water to the 罘 2 cover section 28, and The second cover section "a cooling pipe for discharging the cooling water flow path. The cooling means 47 is a pump section that causes the cooling water cooled by the cooling section to flow in the supply cooling pipe and is sent to the supply port of the second cover section 28. The cooling water flows from the supply port in the cooling flow path, and when the cooling flow path flows, the heat of the second cover portion M and the respective sealing members 40 and 46 which are in contact with the second cover portion flows out toward the discharge port. The cooling means 47 flows the cooling water reaching the discharge port through the discharge cooling pipe. The cooling water flowing in the discharge cooling pipe is cooled by the cooling section and then supplied to the second cover section 28. Fig. 2 (A) is from Π_Π in Fig. 1 2 (B) is a cross-sectional view of a comparative example of another semiconductor device. The second cover portion 28 is for cooling the third sealing member 40 inside the annular portion 37 and The furnace core is formed near the third sealing member 40. Sealed cooling cold coal is cold 84577.DOC -19- 1233169 The core tube sealed cooling flow path 4 8 where water flows. Referring to Fig. 2A, the ring portion 37 is formed with a supply port 49 for supplying cooling water and a discharge of cooling water. And a furnace core tube sealed cooling flow path 48 that connects the supply port 49 and the discharge port 50 through a path. The furnace core tube sealed cooling flow path 48 extends in the circumferential direction along the outer periphery of the third sealing member 40. To cover the third sealing member 40. The cooling water is cooled to a temperature lower than the temperature of the ambient gas filled in the furnace space by the cooling means 47 and is supplied to the supply port 49. Since the furnace core tube seals the cooling flow path 48, it is connected via a path Since the supply port 49 to the discharge port, the cooling water flows on one path without diverging. The flow path of the comparative example shown in FIG. 2B has a diverging portion 5 that diverges the cooling water to 2. 1. The diverting cooling water is again made. At the confluence part 52, the cooling water is formed to flow in two paths. At this time, the cooling water may flow in one of the divergent paths but may not flow in the other path of the divergent path. In the other path where the cooling water does not flow, it is easy to be filled with heat, so that the cooling water becomes high temperature and evaporates. Therefore, the sealing member portion near the other path may not be sufficiently cooled. The cooling of the present embodiment shown in FIG. 2A Since the flow path is formed by one path, the cooling water does not stay, and it can be discharged from the discharge port before the cooling water becomes high temperature. Therefore, when a sealing member is arranged near the path, the cooling water does not become high temperature. The sealing member is cooled. In order to cool the fifth sealing member 46, the lid portion 37 is provided with a measuring means sealing cooling flow path 56 for measuring means for cooling the cooling coal, that is, cooling water flow. The sealing cooling flow path 56 for measuring means is the same as described above. The furnace core tube has the same cooling flow as 84577.DOC -20-1233169, which is the same as 48. It is connected from the supply port to the discharge port through a path so that the cooling water does not remain 'and is discharged from the discharge port before the cooling water becomes high temperature. The measurement means sealed cooling flow path 56 is formed in each measurement means. Similarly, an i-th seal member 35 provided in the first cover portion 26 and a cooling flow path (not shown) for cooling the second seal member 33 and the fourth seal member 45 are formed in the first cover portion 26. Alternatively, the cooling means 47 may supply cooling water to a cooling flow path formed in the j-th cover portion 26. When tempering the semiconductor wafer 24, first, the semiconductor device 20 separates the flange portion 32 of the first cover portion 26 from the opening-forming member 31 in the opposite direction, and opens the furnace space 29 in the axial direction A1. Then, the semiconductor manufacturing apparatus 20 moves the operation rod 43 to one side in the axial direction by the moving means 42, and takes out the opening 4 from the furnace space 29. In the semiconductor manufacturing apparatus 20, when the plurality of openings 4 and the semiconductor wafers 24 are arranged in parallel, the moving rod 43 is moved to one side of the axis 2 by the moving means, and the opening 41 can be inserted to keep the pre-travel. The temperature of the furnace is at a specific position between 2 and 9. Then, the semiconductor manufacturing apparatus 20 makes the flange portion 32 of the cover portion 26 close to the mouth forming member 31 to seal the furnace space 29. After the furnace space 29 is sealed, 1 The opening 27 supplies an environment such as an inert gas such as nitrogen and argon or a reducing gas such as hydrogen. At the same time, it is discharged from the second opening 25 to allow the ambient gas to flow in the furnace space toward one side in the axial direction, replacing the gas filled in the furnace. Half: The body manufacturing device 20 uses the above-mentioned ambient gas to flow.) The impurities that have an adverse effect on the furnace core, plutonium, and processing, and the cleanliness of the furnace core tube are kept at this time. At this time, the semiconductor device 20 series Each seal member 33, 35, 40, 45, 46 seals the gap between the furnace space and the stern space, so that it can prevent contamination.

84577.Doc -21-1233169 quality. After the replacement of the ambient gas in the core tube is completed, the semiconductor wafer 24 is heated by the heater 30. The semiconductor wafer 24 is arranged to be heated in a predetermined soaking zone for a fixed time. The soaking zone includes a so-called soaking zone having a length in the axial direction heated to a predetermined temperature by the heater 30. Since the semiconductor manufacturing apparatus 20 has a plurality of thermoelectric pairs 44 arranged side by side in the radial direction of the furnace core tube 21, the semiconductor wafer 24 under processing is performed based on the temperature of the furnace space 29 measured by the plurality of thermoelectric pairs 44. Temperature management and temperature control of the furnace space. Since the plurality of thermoelectric pairs 44 are juxtaposed with each semiconductor wafer 24, each semiconductor wafer 24 can be temperature-controlled by controlling the heater 30 according to the temperature measured by the thermoelectric pair 44. Since each sealing member 33, 35, 40, 45, 46 is cooled by the cooling means 47, even if the temperature of the furnace space becomes high, the temperature of each sealing member 33, 35, 40, 45, 46 does not exceed the heat resistance The temperature can sufficiently maintain the tightness of the furnace space 29. By heating the semiconductor wafer 24 at a high temperature, the lattice defects of the semiconductor wafer are removed, and the semiconductor wafer for recovery of crystallinity is removed, and the tempering process is ended. In the tempering process, since the cleanliness in the furnace is not required as compared with the oxidation process of the semiconductor, the sealing member 33, 35, 40, 45, 46 is used to seal the furnace space 29 without adversely affecting the quality. Keep the cleanliness in the furnace to the best quality. Further, the furnace core tube 21 can be selected from high-purity quartz, which is a material suitable for the heat treatment of the semiconductor wafer 24. In addition, since the respective cover portions 26 and 28 have less influence on the semiconductor wafer 24, the heat received by each cover portion 26 and 28 is smaller than the heat received by the furnace core tube 84577.DOC -22-1233169. Therefore, compared with the optional material capacity, the material can be used more easily than the material of the furnace core tube 21, ^, ^, and more easily processed (stainless steel and other materials). Each cover portion 26, 28 is realized by a material that is easy to process, and the number of openings is: Even if the shape of the opening is complicated, it can be accurately shaped 26, 28.衣 化 ®each is described as follows: The semiconductor manufacturing device 20 according to the present invention is formed separately from each of the cover portions 26 and 28, so that the furnace core tube 21 of an early pure shape can be formed into a mouth shape ^ semiconductor The manufacturing device 2G can easily manufacture a semiconductor package 1 〇 ::, as in the conventional technology, compared with the case of forming a core tube made of quartz. It is possible to form openings having a more complicated shape than by processing the respective cover portions 26 and 28. Another two = belong to the opening, the formed through holes and so on. For example, it can be easily used for measurement.

^ y U 4 is used for temperature management and W thermoelectric pair 44 to obtain multiple semiconductor wafers. 24 corrections = ^ Beixun H holds multiple semiconductors I- 〇2 in the furnace space 29 During the heat treatment, the temperature management of the day-to-day sleepy 24 can be guided, and a good cup can be imported from the mother semiconductor wafer 24, and a plurality of semiconductor wafers 24 can be measured. This reduces the manufacturing cost of the semiconductor wafer 24 to be processed. …, So that the manufactured semiconductor is formed into a cross-sectional shape perpendicular to the direction of the tube by providing openings 25 to 7 in each of the grooves 26 and 28: the shape can be edited. In this way, compared with the core tube of the conventional technology: the direct function of the core tube reduces the manufacturing cost of the core tube / early, the shape of the mouth, the shape of the mouth, so it can be opened by 3 not in the core tube 21 The stress generated by the opening formation is concentrated on the furnace core

84577.DOC -23-1233169 The tube η disappears, which increases the strength of the furnace core tube 21. Thereby, when the furnace core 21 is cleaned, the furnace core tube 21 can be prevented from being damaged. In addition, since the heart has a simple shape, cleaning operations can be easily performed. &amp; 'Even if the mechanical load processing process is repeated in a vacuum state and a gas-filled state, stress will not be concentrated somewhere', which prevents the core tube 21 from being damaged. Further, "each sealing member 33, 35, 40, 45, 46 has flexibility and elasticity" is made of, for example, fluorine rubber. Each sealing member 33, 35, 40, 45, 46 is inserted through the gap from the furnace to the outside of the furnace through a seal, so that the processing accuracy of the processed cover portions 26, 28 is reduced, even if a cutting is formed. When opening to the gap outside the furnace, the airtightness in the furnace can be reliably maintained. In addition, the semiconductor manufacturing apparatus 20 cools the sealing members 33, 35, 40, 45, and 46 by the cooling means 47 to prevent the sealing members 33, 35, 40, 45, and 46 from heating to a heat-resistant temperature or higher. Thereby, the sealing properties of the respective cover portions%, μ and the furnace core tube 21 can be maintained. In addition, since each sealing member 33, 35 45 46 is cooled, each sealing member 33, 35 does not need to be far away from the heater 30, and each cover portion 26, 28 can be arranged close to the heater ^ ^ H H shorten the furnace core tube The soaking length of 21 can reduce the size in the axial direction. By reducing the size of the furnace core tube 2 i, the furnace space M can be reduced, and the processing temperature and processing pressure between the furnaces can be achieved in a short time, which can increase the number of semiconductors manufactured per unit time. The late semiconducting to manufacturing device 20 can be changed in configuration within the scope of the invention without exceeding the example of the invention. Although the semiconductor manufacturing apparatus 2G used in the tempering process is exemplified in the above embodiment, processes other than the tempering process may be used. Example%, when alloying electrode materials with semiconductor materials

84577.DOC -24- 1233169 ’__ to ensure the ohmic interface. Furthermore, it can also be used for heating the alloyed part of the object to be processed. 斫 It can be used for thin film formation processing for growing semiconductors with impurities added. ， Secretary of the Ministry of Commerce No. 2: Example: In the above embodiment, although it extends in each cover ": There are openings 25 and 27 formed in the upper direction, but it can also be extended in other directions than the axis temple A plurality of openings are provided. Each of the cover portions 26 and 28 is formed of a metal that is easier to process than the furnace core tube 21, and can form a cover portion with a complicated shape. Although the object to be heat treated is a high-conductor crystal "Yuan", but other semiconductors can also be used to make semiconductors. Ben = It is clear that various forms can be implemented without departing from its spirit or main characteristics. Therefore, the above-mentioned embodiment is not limited to the illustrations of all points. The scope is indicated in the scope of patent application, and is not limited to the text of the specification. Furthermore, the modifications or changes to which the patent scope belongs are within the scope of the present invention. [Brief description of the drawings] The purpose, characteristics and The advantages can be clearly understood from the following detailed description and drawings. Fig. 1 is a cross-sectional view of a semiconductor manufacturing apparatus 20 according to an embodiment of the present invention. Fig. 2 (A) is a cross-sectional line taken along line Π- — in Fig. I Watching Semiconductor Means 2〇 'in FIG. 2 (B) Comparative Example-based cross-sectional view of another semiconductor device. FIG. 3 lines sectional view of the conventional semiconductor manufacturing apparatus 1. FIG represented by the formula [1] Description of Symbols semiconductor manufacturing apparatus 2〇

2, 21 furnace core tube 84577.DOC 25-1233169 4, 6 '22 &gt; 23 axial ends 3 ^ 24 semiconductor wafer 25 first opening 26 first cover 27 second opening 28 second cover 10 '29 Furnace space 8, 30 Heater 31 Opening forming member 31a, 31b, 36a, 41, 42 End 32 5C edge member 33 First seal member 34 First fitting member 35 Second seal member 37 Ring portion 38 Cover part 39 Second fitting part 40 Third sealing member 41 Opening 42 Transfer means 43 Operating rod 54 Insertion hole 44 Thermoelectric pair 55 Through hole 84577.DOC -26- 1233169 45 Fourth sealing member 46 Fifth sealing member 47 Cooling Means 48 Furnace core tube sealed cooling flow path 49 Supply port 50 Discharge port 51 Divided part 52 Confluence part 56 Sealed cooling flow path for measuring means 5 Furnace core tube body part 9 Cover part 7 Branch tube part A1, A2 84577.DOC -27-

Claims (1)

1233169 Patent application park: A semiconductor manufacturing device that heat-processes material to form a semiconducting moon bean '/, and is characterized by having the following components: Furnace core tube' Both ends in the axial direction of the opening axis 1 and form a furnace space for the object to be processed; the first cover portion is separately provided with the furnace core tube at the end of the axis of the furnace core axis, and the shaft of the furnace core tube can be opened and closed to close the axis of the furnace core tube. e W God, please find the universal opening at one end, which is connected to the furnace space; and the end, which closes the opening in the axial direction of the furnace core tube, which is connected to another. The second cover part is disposed separately from the furnace core tube at the other end in the axial direction of the furnace core tube, and is formed with the furnace space. 2. The semiconductor manufacturing device as described in the patent application item No. 丨, wherein the temperature of the furnace space is measured. The temperature measuring means is inserted into the second cover portion. μ 上 3. The semiconductor manufacturing device according to item 2 of the scope of patent application, further comprising: a sealing member for a measuring means that seals a gap between the second cover portion and a temperature measuring means; and a sealing member for a cooling measuring means Measurement means sealed cooling means. 4. The semiconductor manufacturing device according to item 3 of the patent application, wherein the second cover is formed with a measuring means for cooling the flow of cold coal by a measuring means for cooling the above-mentioned measuring means with a sealing member, and a cooling flow path is sealed, the above-mentioned foot measuring means The sealed cooling means causes the measuring means to cool the cold coal in the measuring means sealed cooling flow path. 5. The semiconductor manufacturing device according to item 4 of the scope of patent application, wherein the measuring means seal cooling flow path is to seal the cooling means supplied with the measuring means through a path 84577.DOC 1233169 cold coal supply port and discharge measuring means are sealed to cool down The coal discharge phase is 1%. For example, the semiconductor manufacturing apparatus of the scope of application for a patent includes the following: a furnace core tube sealing member for sealing the gap between the furnace core tube and the second cover part; and a furnace for cooling the furnace core tube sealing member. Core tube seal cooling means. The semiconductor manufacturing device of claim 6 in the patent application scope, wherein a furnace core tube sealed cooling flow path for cooling the flow of cold coal by forming a furnace core tube for cooling the sealing member for the furnace core tube is formed on the second cover part, and the furnace core tube is formed. The golden seal cooling means causes the furnace core tube to seal and cool the cold coal to flow in the furnace core tube seal cooling flow path. S • Semiconductor manufacturing equipment such as the scope of the patent application, wherein the furnace core tube sealed cooling flow path is a channel for sealing t, ... and the discharge measuring means supplied with the furnace core tube sealed cooling cold k and cooling measurement of cold coal Connected to the exhaust port. 9. The semiconductor manufacturing device according to any one of claims 1 to 8 of the scope of application for a patent, wherein the eighth furnace core has a cross-sectional shape perpendicular to the axis direction formed in the same axis direction. ίο. For a semiconductor manufacturing apparatus according to the scope of application for a patent, wherein the thermal treatment is a tempering treatment. u. The semiconductor manufacturing apparatus according to item 1 of the patent application range, wherein the above-mentioned heat treatment system alloys the electrode material with the semiconductor, and heat-processes the alloy to ensure the ohmic interface. 12. The semiconductor manufacturing device according to the scope of the patent application, wherein the thermal treatment is a diffusion treatment of a semiconductor to which impurities are added. 84577.DOC 1233169 13. The semiconductor manufacturing apparatus according to item 1 of the patent application scope, wherein the above-mentioned thermal treatment is a thin film formation process by epitaxial growth. 84577.DOC