CN1230914C - 一种肖特基二极管的原型器件及其制备方法 - Google Patents
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- CN1230914C CN1230914C CN 03116008 CN03116008A CN1230914C CN 1230914 C CN1230914 C CN 1230914C CN 03116008 CN03116008 CN 03116008 CN 03116008 A CN03116008 A CN 03116008A CN 1230914 C CN1230914 C CN 1230914C
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- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 5
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 12
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000007796 conventional method Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Abstract
本发明的肖特基二极管原型器件是在衬底上自下而上依次沉积欧姆接触电极层、n-ZnO膜外延层、刻蚀氮化硅形成的Si3N4接触窗口层和肖特基金属电极层而构成。其制备方法依次包括清洗衬底；真空镀欧姆接触电极；磁控溅射生长n-ZnO外延膜层；等离子淀积Si3N4，一次光刻；蒸发肖特基金属电极，二次光刻。用本发明的原型器件制作的肖特基二极管，其反向特性较传统结构有明显提高，同时具有正向压降小，反向漏电流小，反向击穿电压大，高温稳定性好等优点。适合在高温，强辐射环境下工作，可广泛应用于微波混频，检波及高速开关电路等领域。
Description
技术领域
本发明涉及肖特基二极管的原型器件及其制备方法。
背景技术
肖特基二极管是利用金属和半导体之间接触势垒进行工作的一种多数载流子器件。传统的肖特基二极管反向特性较差，并且制作工艺繁琐。制作肖特基二极管原型器件最常用的材料是Si，SiC，金刚石。Si材料不适合在高温下工作，不宜作为大功率与抗辐射器件。SiC，金刚石价格昂贵，生长温度高(＞1000℃)。
发明内容
本发明的目的是提供一种适合在高温，强辐射条件下使用的肖特基二极管原型器件及其制备方法。
本发明的肖特基二极管原型器件是在衬底上自下而上依次沉积欧姆接触电极层、n-ZnO膜外延层、刻蚀氮化硅形成的Si3N4接触窗口层和肖特基金属电极层而构成。
该肖特基二极管原型器件的制备方法包括以下步骤：
1)按常规方法清洗衬底；
2)在室温下真空镀欧姆接触电极；
3)用去离子水，丙酮超声清洗，放入磁控溅射生长室，在400-550℃温度、2.5-6Pa压力下，磁控溅射生长n-ZnO外延膜层；
4)四氯化碳超声清洗样品，等离子淀积Si3N4，在Si3N4上涂光刻胶，曝光，显影，反应离子刻蚀Si3N4，形成一排排接触窗口；
5)四氯化碳超声清洗样品，氮气吹干，电子束蒸发肖特基金属电极，在肖特基金属电极上涂光刻胶，曝光，显影，湿法腐蚀出一排排肖特基金属电极窗口；
6)将样品进行退火，退火温度300-500℃，时间1分钟。
本发明的肖特基二极管原型器件由于在n-ZnO膜层与肖特基金属电极层之间沉积了一层Si3N4，因此用该原型器件制作的肖特基二极管，其反向特性较传统结构有明显提高，同时该种二极管还具有正向压降小，反向漏电流小，反向击穿电压大，高温稳定性好等优点。适合在高温，强辐射环境下工作，可广泛应用于微波混频，检波及高速开关电路等领域。
附图说明
图1为本发明肖特基二极管原型器件结构示意图。
图2为本发明原型器件制作的肖特基二极管的I-V曲线。
具体实施方式
参照图1，本发明的肖特基二极管原型器件是在衬底1上自下而上依次沉积欧姆接触电极层2、n-ZnO膜外延层3、刻蚀氮化硅形成的Si3N4接触窗口层4和肖特基金属电极层5而构成。其衬底可以是硅，或者蓝宝石，通常用硅。欧姆接触金属电极层可以是铝(Al)或钛铝(Ti/Al)双层金属，肖特基金属电极层可以是金(Au)或银(Ag)。n-ZnO膜外延层3的掺杂浓度一般为1.8×1015cm-3-2.0×1018cm-3。掺杂可以是本征的或者是掺Al。
若以Al为欧姆接触电极，Au为肖特基金属电极，其制备过程如下：
1)用RCA清洗法将硅衬底清洗干净；
2)在室温下真空镀铝电极；
3)用去离子水，丙酮超声清洗，放入磁控溅射生长室，在450℃、3Pa压力下，磁控溅射生长n-ZnO外延膜层；外延厚度为0.3微米，n-ZnO掺杂浓度为1.8×1015cm-3。
4)四氯化碳超声清洗样品，等离子淀积Si3N4，在Si3N4上涂光刻胶，曝光，显影，反应离子刻蚀Si3N4，形成一排排圆形接触窗口；
5)四氯化碳超声清洗样品，氮气吹干，电子束蒸发Au，在Au上涂光刻胶，曝光，显影，湿法腐蚀出一排排圆形Au窗口；
6)对样品进行400℃，时间1分钟退火。得到以Au/Si3N4/ZnO/Al为结构的肖特基二极管原型器件。
以本例得到的原型器件制得的肖特基二极管，经I-V测试表明具有明显的整流特性和较高的击穿电压(见图2)，漏电流仅为-0.02μA(-10V)。
Claims (4)
1.一种肖特基二极管的原型器件，其特征在于它是在衬底(1)上自下而上依次沉积欧姆接触电极层(2)、n-ZnO膜外延层(3)、刻蚀氮化硅形成的Si3N4接触窗口层(4)和肖特基金属电极层(5)而构成。
2.根据权利要求1所述的肖特基二极管的原型器件，其特征在于所说的欧姆接触电极层(2)是铝或钛铝双层金属，肖特基金属电极层(5)是金或银。
3.根据权利要求1所述的肖特基二极管的原型器件，其特征在于n-ZnO膜外延层(3)的掺杂浓度为1.8×1015cm-3-2.0×1018cm-3。
4.权利要求1所述的肖特基二极管原型器件的制备方法，其特征是包括以下步骤：
1)按常规方法清洗衬底；
2)在室温下真空镀欧姆接触电极；
3)用去离子水，丙酮超声清洗，放入磁控溅射生长室，在400-550℃温度、2.5-6Pa压力下，磁控溅射生长n-ZnO外延膜层；
4)四氯化碳超声清洗样品，等离子淀积Si3N4，在Si3N4上涂光刻胶，曝光，显影，反应离子刻蚀Si3N4，形成一排排接触窗口；
5)四氯化碳超声清洗样品，氮气吹干，电子束蒸发肖特基金属电极，在肖特基金属电极上涂光刻胶，曝光，显影，湿法腐蚀出一排排肖特基金属电极窗口；
6)将样品进行退火，退火温度300-500℃，时间1分钟。
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| CN1440082A (zh) | 2003-09-03 |
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