CN1222197C - 用于扼制基底电荷累积的离子束辐照装置和方法 - Google Patents
用于扼制基底电荷累积的离子束辐照装置和方法 Download PDFInfo
- Publication number
- CN1222197C CN1222197C CNB021548803A CN02154880A CN1222197C CN 1222197 C CN1222197 C CN 1222197C CN B021548803 A CNB021548803 A CN B021548803A CN 02154880 A CN02154880 A CN 02154880A CN 1222197 C CN1222197 C CN 1222197C
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- China
- Prior art keywords
- radio frequency
- plasma
- ion beam
- electrical power
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 64
- 238000009825 accumulation Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 13
- 230000005855 radiation Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007600 charging Methods 0.000 abstract description 11
- 210000002381 plasma Anatomy 0.000 description 180
- 150000002500 ions Chemical class 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 241001212149 Cathetus Species 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001370167A JP2003173757A (ja) | 2001-12-04 | 2001-12-04 | イオンビーム照射装置 |
JP370167/2001 | 2001-12-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1424867A CN1424867A (zh) | 2003-06-18 |
CN1222197C true CN1222197C (zh) | 2005-10-05 |
Family
ID=19179429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021548803A Expired - Fee Related CN1222197C (zh) | 2001-12-04 | 2002-12-04 | 用于扼制基底电荷累积的离子束辐照装置和方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7087912B2 (zh) |
JP (1) | JP2003173757A (zh) |
KR (1) | KR20030045652A (zh) |
CN (1) | CN1222197C (zh) |
GB (1) | GB2389226B (zh) |
TW (1) | TWI267107B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100497192B1 (ko) * | 2002-12-05 | 2005-06-28 | 동부아남반도체 주식회사 | 이온주입장비의 플라즈마 플러드 건 |
US7834422B2 (en) * | 2004-05-18 | 2010-11-16 | Qucor Pty. Ltd. | Implanted counted dopant ions |
US20060049116A1 (en) * | 2004-09-03 | 2006-03-09 | Subramanian Krupakar M | Method and apparatus for bubble glow discharge plasma treatment of fluids |
US7498592B2 (en) * | 2006-06-28 | 2009-03-03 | Wisconsin Alumni Research Foundation | Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams |
JP4001185B1 (ja) | 2007-03-06 | 2007-10-31 | 日新イオン機器株式会社 | プラズマ発生装置 |
US8659335B2 (en) * | 2009-06-25 | 2014-02-25 | Mks Instruments, Inc. | Method and system for controlling radio frequency power |
EP2416629B1 (en) * | 2009-08-07 | 2021-04-21 | Kyosan Electric Mfg. Co. Ltd | Pulse-modulated high-frequency power control method and pulse-modulated high-frequency power source device |
JP5409470B2 (ja) * | 2010-03-24 | 2014-02-05 | キヤノンアネルバ株式会社 | ニュートラライザ及びこれを備えたイオンビーム装置 |
IES20100241A2 (en) * | 2010-04-21 | 2011-10-26 | Impedans Ltd | Sensing of process parameters |
EP2800960B1 (en) | 2012-02-08 | 2018-10-31 | MKS Instruments, Inc. | Ionization gauge for high pressure operation |
JP6670692B2 (ja) * | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
JP6480534B1 (ja) * | 2017-09-26 | 2019-03-13 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム照射装置及び基板の帯電低減方法 |
CN108766877A (zh) * | 2018-04-19 | 2018-11-06 | 中国科学院上海应用物理研究所 | 一种具有周期性的表面电势梯度的材料的制备方法 |
WO2019230184A1 (ja) * | 2018-05-29 | 2019-12-05 | 株式会社エスイー | 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法 |
JP6792754B2 (ja) * | 2018-11-14 | 2020-12-02 | 株式会社エスイー | プラズマを用いた処理装置及び処理対象物にプラズマを照射する処理を行う処理方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR890004881B1 (ko) | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
JPH0734526B2 (ja) | 1987-12-28 | 1995-04-12 | 株式会社日立製作所 | 発振装置 |
JP2791287B2 (ja) | 1994-12-05 | 1998-08-27 | 株式会社日立製作所 | プラズマエッチング処理方法及びその装置 |
GB9710380D0 (en) | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
JP3608416B2 (ja) | 1999-02-02 | 2005-01-12 | 日新電機株式会社 | プラズマ源 |
CN100371491C (zh) * | 1999-08-17 | 2008-02-27 | 东京电子株式会社 | 脉冲等离子体处理方法及其设备 |
US6472822B1 (en) * | 2000-04-28 | 2002-10-29 | Applied Materials, Inc. | Pulsed RF power delivery for plasma processing |
JP3387488B2 (ja) | 2000-12-01 | 2003-03-17 | 日新電機株式会社 | イオンビーム照射装置 |
JP3758520B2 (ja) | 2001-04-26 | 2006-03-22 | 日新イオン機器株式会社 | イオンビーム照射装置および関連の方法 |
-
2001
- 2001-12-04 JP JP2001370167A patent/JP2003173757A/ja active Pending
-
2002
- 2002-12-03 US US10/308,016 patent/US7087912B2/en not_active Expired - Fee Related
- 2002-12-04 GB GB0228235A patent/GB2389226B/en not_active Expired - Fee Related
- 2002-12-04 CN CNB021548803A patent/CN1222197C/zh not_active Expired - Fee Related
- 2002-12-04 KR KR1020020076453A patent/KR20030045652A/ko not_active Application Discontinuation
- 2002-12-04 TW TW091135184A patent/TWI267107B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2003173757A (ja) | 2003-06-20 |
GB0228235D0 (en) | 2003-01-08 |
TW200300953A (en) | 2003-06-16 |
TWI267107B (en) | 2006-11-21 |
GB2389226B (en) | 2005-07-27 |
GB2389226A (en) | 2003-12-03 |
US20030209430A1 (en) | 2003-11-13 |
US7087912B2 (en) | 2006-08-08 |
CN1424867A (zh) | 2003-06-18 |
KR20030045652A (ko) | 2003-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NISSIN ION EQUIPMENT CO LTD Free format text: FORMER OWNER: NISHIN DENKI CO., LTD. Effective date: 20060421 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20060421 Address after: Kyoto Japan Patentee after: Nissin Ion Equipment Co., Ltd. Address before: Kyoto Japan Patentee before: Nissin Electric Co., Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20051005 Termination date: 20121204 |