CN1220050C - 膜沉积期间的金属厚度的自动控制 - Google Patents
膜沉积期间的金属厚度的自动控制 Download PDFInfo
- Publication number
- CN1220050C CN1220050C CNB018226140A CN01822614A CN1220050C CN 1220050 C CN1220050 C CN 1220050C CN B018226140 A CNB018226140 A CN B018226140A CN 01822614 A CN01822614 A CN 01822614A CN 1220050 C CN1220050 C CN 1220050C
- Authority
- CN
- China
- Prior art keywords
- thickness
- deposition
- xrf
- film
- preset value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims abstract description 33
- 230000008021 deposition Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 2
- 238000004876 x-ray fluorescence Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000000427 thin-film deposition Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000004062 sedimentation Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- -1 argon ion Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001572 beryllium Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002641 lithium Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
一种在薄膜沉积期间于沉积室中自动控制金属薄膜的厚度的新方法。该方法包含产生射向沉积室中的在晶片上沉积的金属薄膜的X射线束，且探测该金属薄膜的X射线荧光。将依据该探测到的X射线荧光所确定的金属薄膜的厚度与该预设值相比较，若该所确定的厚度小于预设值时，即继续沉积，当该决定的厚度达到该预设值时则停止沉积。
Description
技术领域
本发明系有关于半导体装置制造，尤指使用X射线荧光探测法(X-ray fluorescence，XRF)自动控制金属厚度于薄膜沉积期间。
技术背景
US-A-4 169 228揭示使用X射线荧光法来分析和/或确定在硅基板上的浅表面层的深度。此技术包含将X射线照射到硅基板上的层结构，并使用广角度射束探测器来探测荧光。分析得到的光谱图以决定各层的深度。
由国际商用机器公司(IBM)于2000年4月10号发行的“研究揭示数据库(Research Disclosure Database)”中公开了控制晶片上合金薄膜成分的方法。该合金薄膜成分从晶片的中心至边缘而不同。举例来说，在70度的载台角(stage angle)处，对于PtMn薄膜而言，Mn的成分在晶片边缘较高。此方法包含于薄膜沉积期间将保持晶片的载台倾斜，以达到使沉积的合金层成分均匀。
US-A-5 657 363揭示由分析X射线光子的特征能级而判定形成在半导体基板上多层结构的成分和厚度。
US-A-5 113 421揭示一种同时测量涂层于金属基板上的厚度和成分的方法。此方法包含将第一和第二X射线束以不同角度射向涂层的表面，并探测具有不同能级的光子的强度。
在半导体装置制造期间，将薄金属层沉积于半导体晶片上以形成通孔(vias)、线路(line)及诸如扩散阻隔层(diffusion barriers)、附着层或晶种层(seed layer)、初级导体层(primary conductors)、防反射光涂布层(antireflection coating)及蚀刻终止层(etch stops)等各种不同的膜层。举例来说，溅射沉积(sputter deposition)，即熟知的物理气相沉积(physical vapor deposition，PVD)，溅射沉积广泛地使用在半导体晶片上金属薄膜结构的制造上。溅射方法即是从固体金属移除原子并于相近的基板上沉积该气相沉积用的产物蒸气(resultant vapor)。
溅射沉积通常于熟知的如磁控管(magnetrons)等二极管等离子系统中执行，其中该阴极由离子轰击溅射并发射原子，然后其以薄膜的形式于晶片上沉积。根据平版印刷术(lithography scheme)，该类薄膜接着由反应离子蚀刻(reactive ion etching，RIE)来蚀刻或使用化学机械抛光法(chemical-mechanical polishing，CMP)来抛光以协助形成电路细微结构(feature)。
一般使用于金属、合金以及化合物的高速率沉积的系统的基本类型有如熟知的磁控管阴极系统者。这种类型的工具利用磁场限制等离子中的电子，而形成比射频(rf)或直流电(dc)二极管系统高的等离子密度。
较高的等离子密度减少了放电阻抗并导致高的多的电流、较低电压的放电。举一粗略的例子来说，以2kW瓦操作的rf二极管工具可具有超过2000伏特的峰对峰电压。以2kW瓦操作的现有磁控管阴极系统可具有400伏特的放电电压以及5安培的离子电流至阴极。
当前制造规模的磁控管系统由不锈钢构成，通常这些系统用大直径的阀门安装直接连接至其沉积室的低温泵，且通常该结果的基本压力对大部分的阴极在10-8Torr范围内较低压力处、对钛在10-9Torr范围内，使其沉积薄膜的化学的活性本质可明显地有助于该系统净抽吸速度。
在沉积期间的运转压力通常为0.5至30m Torr，该运转需要每秒数十上百个标准立方厘米(standard cubic centimeters per minute，sccm)的气体流量，因为考虑到基本压力，在沉积期间制造水平系统不会受阻碍并因此几乎保持该腔室的真实基本压力。作为大规模半导体应用的磁控管室建构成为如在积体制程负载锁定工具(integrated-process loadlocked tool)上的通孔，而将晶片经由负载锁而引进该沉积室。
溅射沉积由沉积时间来管理，其速率对照时间校准，然后以一定的时间周期沉积薄膜。然而，由于工艺差异，在薄膜沉积期间作为特定晶片或成品的沉积薄膜的厚度很难加以控制。通常，在某些相同样品的晶片上沉积后即测量金属薄膜厚度。
然而，制造半导体装置的机械及电气的性质强烈地依赖于金属薄膜厚度，厚度差异大大地影响该装置的性能。因此，希望在薄膜沉积期间可控制于每一个晶片上的金属薄膜厚度。
发明内容
本发明提供一种在半导体装置制造期间监视沉积至晶片上的金属薄膜的参数的新方法。该方法包含在金属薄膜沉积期间于沉积室中产生射向晶片上金属薄膜的X射线束，并探测该金属薄膜的X射线荧光以决定该薄膜需要的参数。
比较该决定的参数与预设值，若该决定的参数不同于预设值，即继续该金属薄膜之沉积。当该决定的参数与该预设值相同时，则可停止该金属薄膜之沉积。
根据本发明的一个实施例，在薄膜沉积期间由产生射向金属薄膜的X射线束，探测该薄膜的X射线荧光以自动地控制沉积至晶片上的金属薄膜的厚度。
依据该探测的X射线荧光决定的金属薄膜的厚度可与该预设值比较，若该确定的厚度小于预设值时则继续沉积，当该确定的厚度达到该预设值时，则可停止沉积。
对本领域的技术人员，本发明之其它实施例和优点可从下列的详细说明而易于明白，其中，仅本发明的优选实施例以执行本发明所考虑的最佳模式而以简单阐述的方式被显示及说明。如将被认识到一样，本发明可有其它及不同的实施例，且其别的细节可有不同的，明显的修改，且不脱离本发明。因此，附图及说明本质上应视为示例之用，而非作为限制。
附图简单说明
图1表示本发明的示例性的控制系统的简图。
图2为表示进行本发明自动控制金属厚度的方法的流程图。
本发明的优选实施例
虽然本发明具有在诸如CVD、PVD、PEVCD等不同沉积工艺期间控制金属厚度的一般适用性，以下以金属薄膜的溅射沉积为例揭示本发明的优选实施例，图1为本发明控制金属厚度的示例性自动系统10的概略图，该系统10可控制放置于沉积室中的晶片上诸如镍、钴、铝、钛、氮化钛、钨及铜等金属的沉积。
根据本发明的一个实施例，使用X射线荧光(XRF)控制沉积至晶片上的金属薄膜厚度。该X射线荧光作用是基于未过滤的X射线束照射样品为基础，若应用充分短波长的X辐射(X-radiation)，可从被激发的样品(excited sample)观察到一特征X频谱。当电子吸附将其提高至较高运行轨道的X辐射能时产生X射线荧光，然后该高能量的电子通过一连串的步骤而回落到较低的能量状态。此过程导致在较低的能量状态释放出光子。产生的荧光的X射线的强度比用电子束直接激发而获得的X射线束的强度较小了将近1000倍。
该系统10包含X射线源12，该X射线源12发射适于该X射线荧光探测的X射线束。可应用X射线管体作为该X射线源12。典型的X射线管体包含限制该X射线的重金属头部、维持真空的薄铍窗口及凹角玻璃壳层(reentrant glass envelope)。该头部包含钨灯丝，该钨灯丝由电流发射电子而被加热至白热化，该电子被聚焦于一凹面，而该凹面聚焦电子且以一高正电压将电子加速到阳极。该阳极由埋置在重铜块上的金属薄板所构成，重铜块从该焦点位置将热导开。此焦点位置被该灯丝电子轰击且为该X射线的来源。该X射线以透过该铍窗口从该金属头部发出而向所有方向发射。
该X射线源12配置于靠近沉积室14或于该沉积室14内作为在晶片16上进行金属薄膜沉积之用。举例来说，可采用PVD沉积。配置于该沉积室14的沉积靶材18由氩离子轰击，该氩离子从该靶材18的固体材料移除原子，在该晶片16上沉积该产物蒸气。除了该靶材材料之外，该靶材18可包含该铜垫板(copper backing plate)。由强永磁阵列的组成的磁控管阴极可配置于该靶材18之后，该磁铁提供横过该靶材表面的磁场以捕捉电子。
作为靶材腐蚀之氩离子由以该靶材作为阴极的辉光放电等离子发生器产生，沉积室壁或其它的电极用作阳极。在该类电极之间形成电压以加速释放自由电子，其撞击气体分子以产生离子，更多的电子，更多自由基和激发的分子，后者能自发地驰豫到基态并产生光子。这些粒子一旦产生后，就向该靶材扩散至等离子外。
安装该X射线源12以便将该X射线束射向被沉积的金属薄膜。该X射线束导致该金属薄膜发射特征荧光。X射线荧光探测器20配置于该沉积室14中或靠近于该沉积室14以探测该X射线荧光，可使用准直器以拦截发散的X射线并将平行光束射至该探测器的窗口。若该X射线源12以及该X射线荧光探测器20安装于该沉积室14之外，X射线透明窗口可安装于该沉积室14内以容许由该X射线源12产生的X射线束通过该金属薄膜，并容许由该金属薄膜发射的X射线荧光通过该X射线荧光探测器20。
举例来说，可使用固态半导体X射线荧光探测器作为探测由在该晶片上沉积的金属薄膜所发射的X射线荧光。该固态X射线荧光探测器20可为由单晶硅半导体构成的锂迁移探测器，其上有由锂扩散至P型硅或锗中形成的区域。此区域像三明治般夹在P型和N型区域之间，因为锂的极高扩散速率使该锂迁移X射线荧光探测器必须以液态氮的温度维持。
每次入射的X射线光子被吸收时，在该半导体产生大量的电子空穴对。可使用低噪音，高增益(high gain)的前置放大器来放大由该探测器产生的探测信号。本领域的技术人员将了解像充气X射线荧光探测器或光电X射线荧光探测器也可用来作为该X射线荧光探测器20使用。
该金属薄膜的X射线荧光指示包括膜厚的金属薄膜的不同参数。该X射线荧光探测器20产生代表该金属薄膜的X射线荧光的输出信号。举例来说，可预校准该X射线荧光探测器20以产生对应于沉积特定金属的薄膜厚度的预设值的预定输出值。该X射线荧光探测器20之输出信号供应到控制该金属薄膜的溅射沉积的工艺控制器22。该工艺控制器22作为具有逻辑电路或其它执行如下所述的功能的元件的具体设计的芯片。可更换地，使用一般目的的数字信号处理器来执行该控制器22并适当的程序化。
图2所示的流程图说明根据本发明控制金属薄膜厚度的方法。在安装于该沉积室14中的晶片上沉积金属薄膜期间(方框32)，该X射线源12发射射向该金属薄膜的X射线束。该X射线荧光探测器20探测由X射线束辐照的金属薄膜发射的X射线荧光(方框34)。对应该金属薄膜厚度之X射线荧光探测器20的输出信号供应至决定该金属薄膜厚度的控制器22，并且将该探测的厚度与预设值相比较。
若该控制器22确定该金属薄膜的厚度小于预设值时(方框36)，则控制器22控制该溅射沉积工艺以继续沉积金属薄膜；当该控制器22决定该金属薄膜的厚度达到该预设值时，则其停止该沉积工艺。
因此，本发明能够在薄膜沉积期间自动原位控制每一晶片上金属薄膜厚度以沉积具有所需厚度的金属薄膜。
本领域的技术人员将了解的是在本发明的概念的精神与范围之内允许一些修改。举例来说，如上所讨论，可以一些不同的方式执行该X射线源12、该X射线荧光探测器20及该工艺控制器22。该沉积室14可为任何可用以进行诸如CVD、PVD、PEVCD等薄膜沉积的任何类型的腔室或炉以提供诸如镍、钴、铝、钛、氮化钛、钨及铜的金属沉积。
在本揭示中，仅显示并说明了本发明的优选实施例，但须了解的在此处所述的本发明的概念的范围内，本发明可加以改变以及修正。
Claims (3)
1.一种监视在半导体晶片(16)上沉积金属薄膜的参数的方法，该方法包含的步骤为：
在金属薄膜沉积期间于沉积室(14)中产生射向晶片(16)上的该金属薄膜的X射线束；
探测用于控制该金属薄膜厚度的X射线荧光；
根据所探测的X射线荧光以确定该金属薄膜的厚度；以及
比较该确定的厚度与预设值，若该确定的厚度与该预设值不同，则继续该金属薄膜的沉积。
2.如权利要求1所述的方法，其中，当该确定的厚度与该预设值相同时，则停止该金属薄膜的沉积。
3.如权利要求1或2所述的方法，其中，执行该金属薄膜的沉积使用溅镀沉积。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/780,476 US6611576B1 (en) | 2001-02-12 | 2001-02-12 | Automated control of metal thickness during film deposition |
| US09/780,476 | 2001-02-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1489689A CN1489689A (zh) | 2004-04-14 |
| CN1220050C true CN1220050C (zh) | 2005-09-21 |
Family
ID=25119686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018226140A Expired - Fee Related CN1220050C (zh) | 2001-02-12 | 2001-12-03 | 膜沉积期间的金属厚度的自动控制 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6611576B1 (zh) |
| EP (1) | EP1360476B1 (zh) |
| JP (1) | JP2004531702A (zh) |
| KR (1) | KR100786366B1 (zh) |
| CN (1) | CN1220050C (zh) |
| AU (1) | AU2002220217A1 (zh) |
| DE (1) | DE60111652T2 (zh) |
| TW (1) | TW523852B (zh) |
| WO (1) | WO2002065109A2 (zh) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3811089B2 (ja) * | 2002-04-15 | 2006-08-16 | 株式会社東芝 | 摩耗量測定方法 |
| GB0308249D0 (en) * | 2003-04-10 | 2003-05-14 | Trikon Technologies Ltd | Method of depositing piezoelectric films |
| US7068753B2 (en) * | 2004-07-30 | 2006-06-27 | Jordan Valley Applied Radiation Ltd. | Enhancement of X-ray reflectometry by measurement of diffuse reflections |
| JP2006266689A (ja) * | 2005-03-22 | 2006-10-05 | Fujitsu Ltd | 蛍光ｘ線分析装置、蛍光ｘ線分析方法、蛍光ｘ線分析プログラム |
| KR20070036827A (ko) * | 2005-09-30 | 2007-04-04 | 최선영 | 철망 제조장치의 반달기어 구동장치 |
| DE102006009247B4 (de) * | 2006-02-28 | 2007-12-27 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Abschätzen der kristallinen Textur gestapelter Metallleitungen in Mikrostrukturbauelementen |
| JP2008210784A (ja) * | 2007-02-01 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 非水電解質二次電池とその負極の検査方法、製造方法、負極の検査装置、製造装置 |
| EP2188406B1 (en) | 2007-09-12 | 2018-03-07 | Flisom AG | Method for manufacturing a compound film |
| CN101226921B (zh) * | 2008-02-15 | 2010-12-01 | 日月光半导体制造股份有限公司 | 可检测接点厚度的基板及其检测方法 |
| CN101504403B (zh) * | 2009-03-23 | 2012-09-26 | 西南铝业（集团）有限责任公司 | 水煮法检测辊涂铬化膜的均匀性 |
| CN104465481A (zh) * | 2013-09-22 | 2015-03-25 | 盛美半导体设备（上海）有限公司 | 晶圆夹盘 |
| GB2575786B (en) | 2018-07-20 | 2021-11-03 | Dyson Technology Ltd | Stack for an energy storage device |
| CN111430260B (zh) * | 2020-05-15 | 2023-07-07 | 长江存储科技有限责任公司 | 一种晶圆检测方法及装置 |
| CN112831767A (zh) * | 2021-01-04 | 2021-05-25 | 中国航空制造技术研究院 | 一种复合材料表面金属化薄膜复合加工方法 |
| CN114577151B (zh) * | 2022-03-16 | 2023-09-12 | 长江存储科技有限责任公司 | 厚度测量方法及装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2727505A1 (de) | 1977-06-18 | 1979-01-04 | Ibm Deutschland | Roentgenfluoreszenzanalyse zur untersuchung oberflaechennaher schichten |
| WO1986002164A1 (en) * | 1984-10-05 | 1986-04-10 | Kawasaki Steel Corporation | Method of determining thickness and composition of alloy film |
| GB8811459D0 (en) | 1988-05-13 | 1988-06-15 | Dmc Boyle Ltd | Method & apparatus for measuring thickness of coating on substrate |
| JPH04270953A (ja) * | 1991-01-09 | 1992-09-28 | Mitsubishi Electric Corp | 元素分析方法および元素分析装置ならびに薄膜形成装置 |
| JPH07153692A (ja) * | 1993-11-30 | 1995-06-16 | Toshiba Corp | 半導体基板上に薄膜を成長させる方法および装置 |
| US5657363A (en) | 1995-10-10 | 1997-08-12 | Advanced Micro Devices, Inc. | Method and apparatus for determining the thickness and elemental composition of a thin film using radioisotopic X-ray fluorescence (RXRF) |
| US6349128B1 (en) * | 2000-04-27 | 2002-02-19 | Philips Electronics North America Corporation | Method and device using x-rays to measure thickness and composition of thin films |
-
2001
- 2001-02-12 US US09/780,476 patent/US6611576B1/en not_active Expired - Fee Related
- 2001-12-03 CN CNB018226140A patent/CN1220050C/zh not_active Expired - Fee Related
- 2001-12-03 DE DE60111652T patent/DE60111652T2/de not_active Expired - Lifetime
- 2001-12-03 JP JP2002564578A patent/JP2004531702A/ja active Pending
- 2001-12-03 EP EP01273737A patent/EP1360476B1/en not_active Expired - Lifetime
- 2001-12-03 AU AU2002220217A patent/AU2002220217A1/en not_active Abandoned
- 2001-12-03 WO PCT/US2001/046537 patent/WO2002065109A2/en active IP Right Grant
- 2001-12-03 KR KR1020037010565A patent/KR100786366B1/ko not_active IP Right Cessation
-
2002
- 2002-02-01 TW TW091101743A patent/TW523852B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE60111652D1 (de) | 2005-07-28 |
| AU2002220217A1 (en) | 2002-08-28 |
| TW523852B (en) | 2003-03-11 |
| JP2004531702A (ja) | 2004-10-14 |
| DE60111652T2 (de) | 2006-05-18 |
| US6611576B1 (en) | 2003-08-26 |
| WO2002065109A2 (en) | 2002-08-22 |
| KR20030072625A (ko) | 2003-09-15 |
| CN1489689A (zh) | 2004-04-14 |
| WO2002065109A3 (en) | 2003-04-24 |
| EP1360476B1 (en) | 2005-06-22 |
| EP1360476A2 (en) | 2003-11-12 |
| KR100786366B1 (ko) | 2007-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1220050C (zh) | 膜沉积期间的金属厚度的自动控制 | |
| Wehner | Sputtering by ion bombardment | |
| Rossnagel et al. | Metal ion deposition from ionized mangetron sputtering discharge | |
| EP0297502B1 (en) | Method of and apparatus for sputtering | |
| US5593551A (en) | Magnetron sputtering source for low pressure operation | |
| Hayward et al. | Sputtering Yield Measurements with Low‐Energy Metal Ion Beams | |
| US5702573A (en) | Method and apparatus for improved low pressure collimated magnetron sputter deposition of metal films | |
| Stumpe et al. | High-resolution sputter depth profiling with a low pressure hf plasma | |
| US20020121436A1 (en) | Target sidewall design to reduce particle generation during magnetron sputtering | |
| EP1681262B1 (en) | Method for forming wavy nanostructures | |
| Zhurin et al. | Biased target deposition | |
| Horwitz | Hollow cathode reactive sputter etching—a new high‐rate process | |
| Benninghoven | Characterization of coatings | |
| Joo | Ionization enhancement in ionized magnetron sputter deposition | |
| US20060081466A1 (en) | High uniformity 1-D multiple magnet magnetron source | |
| US6090246A (en) | Methods and apparatus for detecting reflected neutrals in a sputtering process | |
| KR20070074020A (ko) | 스퍼터링 증착 장치 및 스퍼터링 증착 방법 | |
| JP3937272B2 (ja) | スパッタ装置及びスパッタ方法 | |
| Widodo | CHARACTERIZATION OF DEPOSITION ALUMINUM (Al) THIN FILM ON SILICON SUBSTRATE BY ARC-12M SPUTTERING SYSTEM | |
| KR19990028451A (ko) | 고종횡비의등각라이너박막및플러그들의개선된증착을위한장치및방법 | |
| McGinnis et al. | Insights into the ion-assisted nucleation of diamond on silicon | |
| Rue et al. | A two-inch dc/rf circular magnetron sputtering gun for a miniature chamber for an in situ experiment | |
| Hayden | Secondary plasma sources for ionized physical vapor deposition | |
| Reed | Reactive high power impulse magnetron sputtering of zinc oxide for thin film transistor applications | |
| JPH11328627A (ja) | スパッタリング装置及びスパッタリング方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100702 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA, THE UNITED STATES TO: CAYMAN ISLANDS, BRITISH |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20100702 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050921 Termination date: 20161203 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |