CN1218217C - 复杂图案的相移掩膜 - Google Patents

复杂图案的相移掩膜 Download PDF

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Publication number
CN1218217C
CN1218217C CN008197296A CN00819729A CN1218217C CN 1218217 C CN1218217 C CN 1218217C CN 008197296 A CN008197296 A CN 008197296A CN 00819729 A CN00819729 A CN 00819729A CN 1218217 C CN1218217 C CN 1218217C
Authority
CN
China
Prior art keywords
phase
mask
shifted
shift mask
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN008197296A
Other languages
English (en)
Chinese (zh)
Other versions
CN1454332A (zh
Inventor
克里斯托弗·皮拉特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Thinking Inc Holdings Ltd
Synopsys Inc
Original Assignee
Synopsys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/669,359 external-priority patent/US6503666B1/en
Application filed by Synopsys Inc filed Critical Synopsys Inc
Publication of CN1454332A publication Critical patent/CN1454332A/zh
Application granted granted Critical
Publication of CN1218217C publication Critical patent/CN1218217C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Steroid Compounds (AREA)
CN008197296A 2000-07-05 2000-11-28 复杂图案的相移掩膜 Expired - Fee Related CN1218217C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US21593800P 2000-07-05 2000-07-05
US60/215,938 2000-07-05
US09/669,359 US6503666B1 (en) 2000-07-05 2000-09-26 Phase shift masking for complex patterns
US09/669,359 2000-09-26

Publications (2)

Publication Number Publication Date
CN1454332A CN1454332A (zh) 2003-11-05
CN1218217C true CN1218217C (zh) 2005-09-07

Family

ID=26910506

Family Applications (1)

Application Number Title Priority Date Filing Date
CN008197296A Expired - Fee Related CN1218217C (zh) 2000-07-05 2000-11-28 复杂图案的相移掩膜

Country Status (6)

Country Link
EP (2) EP2322992B1 (enExample)
JP (1) JP4393063B2 (enExample)
CN (1) CN1218217C (enExample)
AT (1) ATE502321T1 (enExample)
AU (1) AU2001239698A1 (enExample)
DE (1) DE60045744D1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858450B2 (en) 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
KR100586549B1 (ko) * 2004-12-02 2006-06-08 주식회사 하이닉스반도체 포토 마스크 및 이를 이용한 패턴 제조 방법
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
US8065638B2 (en) * 2009-01-30 2011-11-22 Synopsys, Inc. Incremental concurrent processing for efficient computation of high-volume layout data
US8732629B2 (en) 2009-10-30 2014-05-20 Synopsys, Inc. Method and system for lithography hotspot correction of a post-route layout

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5595844A (en) * 1990-11-29 1997-01-21 Kabushiki Kaisha Toshiba Method of exposing light in a method of fabricating a reticle
US5246800A (en) 1991-09-12 1993-09-21 Etec Systems, Inc. Discrete phase shift mask writing
KR100298610B1 (ko) 1992-09-01 2001-11-30 기타지마 요시토시 위상쉬프트포토마스크,위상쉬프트포토마스크블랭크및이들의제조방법
US5362584A (en) * 1993-04-02 1994-11-08 International Business Machines Corporation Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas
US5496666A (en) * 1994-10-27 1996-03-05 Chartered Semiconductor Manufacturing Pte Ltd. Contact hole mask for semiconductor fabrication
US5472814A (en) 1994-11-17 1995-12-05 International Business Machines Corporation Orthogonally separated phase shifted and unphase shifted mask patterns for image improvement
US5523186A (en) * 1994-12-16 1996-06-04 International Business Machines Corporation Split and cover technique for phase shifting photolithography
JP2790127B2 (ja) * 1996-06-27 1998-08-27 日本電気株式会社 フォトマスク及びその製造方法
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5923566A (en) * 1997-03-25 1999-07-13 International Business Machines Corporation Phase shifted design verification routine
US6057063A (en) 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
JPH11109603A (ja) * 1997-10-06 1999-04-23 Mitsubishi Electric Corp フォトマスクおよび半導体装置の製造方法
US6096458A (en) 1998-08-05 2000-08-01 International Business Machines Corporation Methods for manufacturing photolithography masks utilizing interfering beams of radiation

Also Published As

Publication number Publication date
CN1454332A (zh) 2003-11-05
ATE502321T1 (de) 2011-04-15
EP1299771B1 (en) 2011-03-16
EP2322992B1 (en) 2013-07-24
JP2004502971A (ja) 2004-01-29
DE60045744D1 (de) 2011-04-28
AU2001239698A1 (en) 2002-01-14
JP4393063B2 (ja) 2010-01-06
EP2322992A1 (en) 2011-05-18
EP1299771A1 (en) 2003-04-09

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C06 Publication
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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SYNOPSYS INC.

Free format text: FORMER OWNER: SYNOPSYS MERGER HOLDINGS LIMITED

Effective date: 20090911

Owner name: SYNOPSYS MERGER HOLDINGS LIMITED

Free format text: FORMER OWNER: NUMERICAL TECHNOLOGIES INC.

Effective date: 20090911

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20090911

Address after: California, USA

Patentee after: Synopsys, Inc.

Address before: California, USA

Patentee before: New thinking incorporated Holdings Ltd.

Effective date of registration: 20090911

Address after: California, USA

Patentee after: New thinking incorporated Holdings Ltd.

Address before: California, USA

Patentee before: Synopsys, Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050907

Termination date: 20141128

EXPY Termination of patent right or utility model