CN121464732A - 半导体装置及半导体装置的制造方法 - Google Patents

半导体装置及半导体装置的制造方法

Info

Publication number
CN121464732A
CN121464732A CN202480045695.7A CN202480045695A CN121464732A CN 121464732 A CN121464732 A CN 121464732A CN 202480045695 A CN202480045695 A CN 202480045695A CN 121464732 A CN121464732 A CN 121464732A
Authority
CN
China
Prior art keywords
layer
insulating layer
conductive layer
opening
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480045695.7A
Other languages
English (en)
Chinese (zh)
Inventor
古谷一马
八窪裕人
仓田求
泽井宽美
村川努
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN121464732A publication Critical patent/CN121464732A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
CN202480045695.7A 2023-08-09 2024-08-02 半导体装置及半导体装置的制造方法 Pending CN121464732A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023130413 2023-08-09
JP2023-130413 2023-08-09
PCT/IB2024/057484 WO2025032444A1 (ja) 2023-08-09 2024-08-02 半導体装置、及び半導体装置の作製方法

Publications (1)

Publication Number Publication Date
CN121464732A true CN121464732A (zh) 2026-02-03

Family

ID=94534010

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480045695.7A Pending CN121464732A (zh) 2023-08-09 2024-08-02 半导体装置及半导体装置的制造方法

Country Status (4)

Country Link
JP (1) JPWO2025032444A1 (https=)
KR (1) KR20260048534A (https=)
CN (1) CN121464732A (https=)
WO (1) WO2025032444A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI685113B (zh) * 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2017168764A (ja) * 2016-03-18 2017-09-21 株式会社ジャパンディスプレイ 半導体装置
JP2022049605A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置及び半導体記憶装置

Also Published As

Publication number Publication date
JPWO2025032444A1 (https=) 2025-02-13
KR20260048534A (ko) 2026-04-10
WO2025032444A1 (ja) 2025-02-13

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