CN1214526A - Complex travelling-wave electrode optoelectronic modulator and making method of the electrode - Google Patents
Complex travelling-wave electrode optoelectronic modulator and making method of the electrode Download PDFInfo
- Publication number
- CN1214526A CN1214526A CN 98119379 CN98119379A CN1214526A CN 1214526 A CN1214526 A CN 1214526A CN 98119379 CN98119379 CN 98119379 CN 98119379 A CN98119379 A CN 98119379A CN 1214526 A CN1214526 A CN 1214526A
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- Prior art keywords
- electrode
- wave
- modulator
- travelling
- crystal
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Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000013307 optical fiber Substances 0.000 claims abstract description 7
- 230000008569 process Effects 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000835 fiber Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000003139 buffering effect Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The present invention belongs to the field of optoelectronics and integrated optics technology and includes optoelectronic crystal; light waveguide, SiO2 buffering layer and lower electrode combined successively with the surface of the optoelectronic crystal; optical fiber with is at the ends of the optoelectronic crystal and is aligned and adhered with the light waveguide; and upper electrode which is produced on microwave printed circuit board and adhered opposite to the low electrode. The present inention facilitates lowing the loss coefficient of travelling wave and has relatively easy making process with high finished product rate.
Description
The invention belongs to photoelectron and integrated optics technique field, particularly the design of travelling-wave electrode optoelectronic modulator and manufacturing technology.
From growing distance High-speed rate optical fiber telecommunications system to microwave measuring instrument, LiNbO
3Travelling-wave electrooptic modulator has all obtained wide weary application.This class modulator has little wavelength chirp, has important application prospects in the high-speed wideband optical communication system in future.
Typical case's travelling-wave electrode optoelectronic modulator structure as shown in Figure 1-Figure 3.Fiber waveguide 15 centerings are bonding in two ends optical fiber 16 and the electrooptic crystal 14, and modulated light is entered by optical fiber one end, via fiber waveguide, is exported by other end optical fiber at last.The modulating signal of electricity is by the end input of traveling wave electrode, electro optic effect by crystal, the modulating signal of the electricity on traveling wave electrode has changed the optical index of fiber waveguide, by the interference of light effect, make the output light intensity do corresponding the variation, thereby realized modulating action light by the electrical modulation signal.
For wide band electrooptic modulator, traveling wave electrode generally adopts co-planar waveguide type (Coplanar Waveguide) electrode.As shown in Figure 3, it is made up of the ground electrode 13 of central electrode 11 and both sides.The yardstick of general central electrode width and electrode gap is micron dimension.Therefore, all adopt the manufacturing process of integrated circuit that electrode is produced on the wafer.Upload transmission loss in order to reduce the electrical modulation signal at traveling wave electrode, require electrode that enough thickness is arranged, be generally 3 to 20 microns, it is to use earlier vacuum evaporation method, steams one deck gold film in wafer surface, gets rid of the photoresist of a bed thickness then, the photoetching electrode pattern, the plating thickening is made.The traveling wave electrode loss factor of making electrooptic modulator in this way is α
0=1.4 to 0.7dB/ (cm (GHz)
1/2).According to the electrooptic modulator theory, it is wideer to obtain modulation bandwidth, and the electrooptic modulator that driving power is lower must further reduce the traveling wave electrode loss factor.Adopt usual structure shown in Figure 3, will be again with the electrode thickening, this has increased the technology difficulty that electrode is made widely.The electrode maximum ga(u)ge that the present thickening of plating is in the world made is 29 microns, its α
0Value can be reduced to 0.43dB/ (cm (GHz)
1/2).At this moment the cross section of central electrode is wide 8 microns, high 29 microns on end height and narrow thin slice, its bottom is easy to and plane of crystal is thrown off, and modulator was lost efficacy.Therefore, reduce the traveling wave electrode loss factor again, thicken this structure electrode, just be faced with difficulty in the intrinsic technology manufacturing that is difficult to overcome.
The objective of the invention is to propose a kind of electrooptic modulator of complex travelling-wave electrode for overcoming the difficulty of prior art on electrode is made.Its electrode is made up of two parts up and down, makes it be easy to reduce the traveling wave electrode loss factor, and manufacturing process is relatively easy, has in profit raising rate of finished products.Both be suitable for broad band electrooptic modulator, also be suitable for the ultra wide band electrically optical modulator.
The electrooptic modulator of the complex travelling-wave electrode that the present invention proposes, comprise electrooptic crystal, this electrooptic crystal surface is combined with fiber waveguide, silicon dioxide resilient coating, bottom electrode successively and is positioned at this electrooptic crystal two ends, with the bonding optical fiber of said fiber waveguide centering, said bottom electrode is made up of central electrode and the ground electrode that is positioned at these central electrode both sides, it is characterized in that, comprise also and the corresponding top electrode that is produced on the microwave printed circuit board (PCB) of said bottom electrode that this top electrode tightly is bonded at down on the electroplax face-to-face.
The electrode manufacturing method of above-mentioned complex travelling-wave electrode optoelectronic modulator may further comprise the steps: (1) adopts the manufacturing process of conventional integrated circuit that said bottom electrode is produced on the wafer; (2) with conventional photoetching, the wet etching of acid corrosion and electroplating gold on surface protection process are produced on top electrode on the microwave printed circuit plate and form coplanar electrodes; (3) then top electrode is close on the bottom electrode Face to face.
Effect of the present invention: adopt complex travelling-wave electrode electrode lossy microwave factor alpha 0 value can be dropped to 0.35dB/ (cm (GHz)
1/2) or lower.This is the lowest loss coefficient that the traveling wave electrode of similar electrooptic modulator obtains at present.Be equipped with suitable input, output transition circuit, the modulation bandwidth of electrooptic modulator is easy to make greater than 40Ghz.
The simple declaration of accompanying drawing and accompanying drawing:
Fig. 1 is the vertical cut-away view of existing typical travelling-wave electrode optoelectronic modulator structure.
Fig. 2 is that the A-A of Fig. 1 is to view.
Fig. 3 is the vertical view of Fig. 1.
Fig. 4 is the vertical cut-away view of embodiments of the invention structure.
The embodiment that the present invention proposes the manufacture method of a kind of complex travelling-wave electrode optoelectronic modulator and electrode thereof is described in detail as follows:
The structure of the complex travelling-wave electrode optoelectronic modulator of present embodiment as shown in Figure 4, the electrode of this electrooptic modulator is by two partly forming up and down.Structures such as the fiber waveguide 27 on lower electrode 24,25 and the electrooptic crystal 28, silicon dioxide resilient coating 26 are similar to the electrooptic modulator of conventional traveling wave electrode, and just thickness of electrode does not need very thickly, generally about 10 microns, is easier to make.Upper electrode the 22, the 23rd is produced on the microwave printed circuit plate 21, and it is with conventional photoetching, the coplanar electrodes that the wet etching of acid corrosion and electroplating gold on surface protection process are made.Then upper electrode is close on the bottom electrode Face to face, this moment, the central electrode cross section just became the T font.For the ease of the speeds match condition that realizes that modulator requires, should select low medium coefficient for use, the microwave printed circuit plate of low loss dielectric material.Because the thickness of Copper Foil can be done thicklyer on the microwave printed circuit plate, generally can be 35 microns.Therefore, the electrode actual (real) thickness that is composited is easy to reach 45 microns, thereby has reached further reduction traveling wave electrode loss factor, the purpose of broadening modulator bandwidth.
Present embodiment electrode manufacture process is: selecting thickness for use is that 1.5 millimeters pure polytetrafluoroethylene coating foil printed circuit board is made upper electrode; thick 35 microns of Copper Foil; with the photoetching of above-mentioned routine, the coplanar electrodes cross section that the wet etching of acid corrosion and electroplating gold on surface protection process are made as shown in Figure 4.The central electrode cross section is trapezoidal among the figure, and this is the result of sour sideetching.The electrooptic crystal of modulator lower part is that Z cuts lithium niobate (LiNbO
3) crystal, its upper surface is made fiber waveguide Mach-Zehnder interferometer with high temperature titanium diffusing method, then at the silicon dioxide (SiO of 1 to 1.5 micron of this surface sputtering one deck
2) resilient coating, lower electrode evaporates by above-mentioned conventional method, photoetching, and plating is produced on the fiber waveguide.The lower central electrode is wide 10 microns, 30 microns of electrode gaps, thick 8 microns.
This embodiment has been made 6 samples altogether, the electrode lossy microwave factor alpha of test gained
0Value is all at 0.35dB/ (cm (GHz)
1/2) near.Illustrate that repeatability of the invention process is fine.
Different electrode lengths is selected in the requirement different according to the user for use, can produce the wideband modulator with different modulating bandwidth.It is 25 millimeters electrooptic modulator that this embodiment has been made electrode length, and its low frequency switching voltage is 4.6 volts.
Claims (4)
1, a kind of complex travelling-wave electrode optoelectronic modulator, comprise electrooptic crystal, this electrooptic crystal surface is combined with fiber waveguide, silicon dioxide resilient coating, bottom electrode successively and is positioned at this photoelectric crystal two ends, with the bonding optical fiber of said fiber waveguide centering, said bottom electrode is made up of central electrode and the ground electrode that is positioned at these central electrode both sides, it is characterized in that, comprise also and the corresponding top electrode that is produced on the microwave printed circuit board (PCB) of said bottom electrode that this top electrode tightly is bonded at down on the electroplax face-to-face.
2, the electrode manufacturing method of complex travelling-wave electrode optoelectronic modulator as claimed in claim 1 is characterized in that, may further comprise the steps:
(1) adopt the manufacturing process of conventional integrated circuit that said bottom electrode is produced on the wafer;
(2) with conventional photoetching, the wet etching of acid corrosion and electroplating gold on surface protection process are produced on top electrode on the microwave printed circuit plate and form coplanar electrodes;
(3) then top electrode is close on the bottom electrode Face to face.
3, the electrode manufacturing method of the electrode manufacturing method of complex travelling-wave electrode optoelectronic modulator as claimed in claim 2 is characterized in that, said microwave printed circuit board (PCB) adopts low medium coefficient, and the low loss dielectric material is made.
4, the electrode manufacturing method of complex travelling-wave electrode optoelectronic modulator as claimed in claim 2 is characterized in that, said electrooptic crystal adopts lithium columbate crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98119379A CN1050429C (en) | 1998-09-25 | 1998-09-25 | Complex travelling-wave electrode optoelectronic modulator and making method of the electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98119379A CN1050429C (en) | 1998-09-25 | 1998-09-25 | Complex travelling-wave electrode optoelectronic modulator and making method of the electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1214526A true CN1214526A (en) | 1999-04-21 |
| CN1050429C CN1050429C (en) | 2000-03-15 |
Family
ID=5226359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98119379A Expired - Fee Related CN1050429C (en) | 1998-09-25 | 1998-09-25 | Complex travelling-wave electrode optoelectronic modulator and making method of the electrode |
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| Country | Link |
|---|---|
| CN (1) | CN1050429C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300957C (en) * | 2003-09-18 | 2007-02-14 | 电子科技大学 | Super-broadband integral optical waveguide microwave subcarrier electromagnetic wave receiver |
| US7639024B2 (en) | 2006-07-25 | 2009-12-29 | Siliconmotion Inc. | Resistance compensation circuit and method thereof |
| CN102096208A (en) * | 2011-01-06 | 2011-06-15 | 电子科技大学 | Novel method for designing coplanar waveguide electrodes of polymer modulator |
| CN111061071A (en) * | 2020-01-09 | 2020-04-24 | 清华大学 | Electro-optic modulator and method of making the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85104407A (en) * | 1985-04-01 | 1986-07-02 | 国家地震局地震研究所 | A kind of ultrahigh frequency electrooptic modulator or detuner |
| CN85105058A (en) * | 1985-07-03 | 1986-12-31 | 国际标准电气公司 | Optical receiver |
-
1998
- 1998-09-25 CN CN98119379A patent/CN1050429C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1300957C (en) * | 2003-09-18 | 2007-02-14 | 电子科技大学 | Super-broadband integral optical waveguide microwave subcarrier electromagnetic wave receiver |
| US7639024B2 (en) | 2006-07-25 | 2009-12-29 | Siliconmotion Inc. | Resistance compensation circuit and method thereof |
| CN102096208A (en) * | 2011-01-06 | 2011-06-15 | 电子科技大学 | Novel method for designing coplanar waveguide electrodes of polymer modulator |
| CN111061071A (en) * | 2020-01-09 | 2020-04-24 | 清华大学 | Electro-optic modulator and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1050429C (en) | 2000-03-15 |
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