CN1212470A - Mos－技术中的数字开关电路 - Google Patents

Mos－技术中的数字开关电路 Download PDF

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Publication number
CN1212470A
CN1212470A CN98117880A CN98117880A CN1212470A CN 1212470 A CN1212470 A CN 1212470A CN 98117880 A CN98117880 A CN 98117880A CN 98117880 A CN98117880 A CN 98117880A CN 1212470 A CN1212470 A CN 1212470A
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switch circuit
digital switch
doped region
semiconductor body
metal band
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M·布克
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Siemens AG
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Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1903—Structure including wave guides

Abstract

本发明涉及一种MOS－技术中的数字开关电路,其中在一个半导体主体(1)上设有一个介电层(5)。为了借助信号进行能量传输,在所说半导体主体上设置一种微波带状线(2),所说微波带状线由一个金属带状线(3)和一个掺杂区(4)构成。

Description

MOS-技术中的数字开关电路
本发明涉及一种MOS-技术中的数字开关电路，其中在半导体的主体上设置了一个介电层。
众所周知，让数字电路以尽可能高的频率运行可以获得高速度。但这种高频率运行不可避免地在半导体主体中的各线路和元件之间形成耦合和噪声过程。在半导体中由这些耦合和噪声过程所引起的电压波动可以严重地损害设在其中的数字开关电路的功能。
为了削除这种干扰，试图将数字开关电路设计成使其尽可能地抑制噪声过程。这可以通过相应的线路导向和各元件的布置来实现，例如通过保持一定的距离标准。但这样做正如降低转换速度一样，最终导致数字开关电路的工作频率下降，这正是所要避免的。
因此本发明的任务在于实现一种MOS-技术中的数字开关电路，该数字开关电路能够以高工频运行而在工作中不出现耦合和噪声过程。
根据本发明，这一任务将通过一种开头所述类型的数字开关电路来完成，即，在半导体主体上设置一种微波带状线用来进行信号传输。
为此，本发明采用了一种全新的途径：也就是考虑使用一种微波带状线进行信号传输而不是使用通常的金属带状线。由此信号的能量不再在金属线路上传输，而更确切地说是在微波带状线的条带之间的电场中进行传送。而这就意味着，所说电场实际上完全处于微波带状线的条带之间，因此在相邻线路和元件上只存在有极小的耦合并且也只出现极少的噪声过程。由此便能够以高频传输信号，因此，根据本发明的数字开关电路的特征是在只有极少耦合和噪声过程情况下具有高的转换速度。
有利的是，所说微波带状线由一个设在介电层上的金属带状线和另一个以掺杂区形式设在金属带状线下部区域的半导体主体中的带状线构成。必要时还可以使用一个第二金属条带来代替掺杂区。另外，微波的分布范围在金属带状线和掺杂区或第二金属条带之间的区域内。
所说掺杂区可以用作微波带状线的接地触点。优选的方式是通过扩散把掺杂区引入到半导体主体中，并且该掺杂区的掺杂浓度高于半导体主体。适合作金属带状线的材料例如可以是铝。
所说带状线的厚度和宽度、介电层的厚度和掺杂区的掺杂浓度可以根据需要进行调整。所需调整的数值取决于多种因素，例如，工频、介电层的介电常数等。
本发明的重要之处在于，首次认识到在MOS-技术中的数字开关电路上使用高频技术元件是可行的，也就是说使用微波带状线是可行的。
下面将借助附图进一步阐述本发明，在唯一的附图中示意地描述了本发明数字开关电路的一个实施例。
在一个例如用硅制成的半导体主体1上，设有由一个金属带状线3和一个掺杂区4构成的微波带状线2。所说掺杂区4布置在金属带状线3下部区域的半导体主体1中，并且可以通过扩散而形成。一种适合作金属带状线3的材料例如是铝。所说金属带状线3的厚度d和其宽度b可以根据需要进行调整。
在金属带状线3和掺杂区4之间有一个例如用二氧化硅制成的介电层5。该介电层5的厚度d′同样可以根据需要进行调整。
按此方法，所说金属带状线3和掺杂区4例如形成了一个M0一线路。该线路在所说金属带状线3和掺杂区4之间的电场中，也就是在所说金属带状线3和掺杂区4之间所设置的介电层的区域中传输信号的能量。由于在此所说的电场基本上处在由金属带状线3和掺杂区4构成的两个“条带”之间，因此在相邻线路和元件上的耦合变得极小，于是便能够传输相当高的频率。
信号进入到微波带状线2的输入耦合或从微波带状线2的输出耦合例如都可以借助高频晶体管来完成。
另外，在所述的实施例中，可以考虑把所说掺杂区4用作微波带状线2的接地触点。

Claims (4)

1．一种MOS-技术中的数字开关电路，其中在一个半导体主体(1)上设有一个介电层(5)，并且为了借助信号进行能量传输，在所说半导体主体上设置一种微波带状线(2)，其特征在于：所说微波带状线(2)的一个条带由一个设在介电层(5)上的金属带状线(3)构成，而另一个条带则由一个掺杂区(4)构成，它设在半导体主体(1)上的金属带状线(3)的下部区域内。
2．根据权利要求1的数字开关电路，其特征在于：所说掺杂区(4)用作微波带状线(2)的接地触点。
3．根据权利要求1或2的数字开关电路，其特征在于：所说掺杂区(4)是通过扩散引入到半导体主体(1)中的，并且该掺杂区的掺杂浓度高于半导体主体。
4．根据前述权利要求1至3之一的数字开关电路，其特征在于：所说金属带状线用铝利制成。
CN98117880A 1997-07-25 1998-07-25 Mos－技术中的数字开关电路 Pending CN1212470A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19732177A DE19732177C2 (de) 1997-07-25 1997-07-25 Digitaler Schaltkreis in MOS-Technologie
DE19732177.1 1997-07-25

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CN1212470A true CN1212470A (zh) 1999-03-31

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EP (1) EP0895289A3 (zh)
JP (1) JPH11186507A (zh)
KR (1) KR19990014142A (zh)
CN (1) CN1212470A (zh)
DE (1) DE19732177C2 (zh)
TW (1) TW392321B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61115338A (ja) * 1984-11-10 1986-06-02 Matsushita Electronics Corp 半導体集積回路装置
US5086329A (en) * 1990-07-27 1992-02-04 The United States Of America As Represented By The Secretary Of The Navy Planar gallium arsenide NPNP microwave switch

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KR19990014142A (ko) 1999-02-25
EP0895289A2 (de) 1999-02-03
TW392321B (en) 2000-06-01
DE19732177C2 (de) 1999-06-10
JPH11186507A (ja) 1999-07-09
EP0895289A3 (de) 1999-09-15
DE19732177A1 (de) 1999-02-11

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