CN1209649A

CN1209649A - Winding automatic-welding spherical-array type integrated circuit packing method

Info

Publication number: CN1209649A
Application number: CN97117534A
Authority: CN
Inventors: 蔡维人
Original assignee: HUATONG COMPUTER CO Ltd
Current assignee: HUATONG COMPUTER CO Ltd
Priority date: 1997-08-27
Filing date: 1997-08-27
Publication date: 1999-03-03
Anticipated expiration: 2017-08-27
Also published as: CN1072397C

Abstract

The roll automatic welded ball gridarray integrated circuit packaging method is characterized by that covering the polyimide film whose both sides are equipped with pressure-joined thin copper layers with first dry film; etching lower layer of thin copper of form several notches; laser drilling to form several holes corresponding to the notches on the polyimide film;covering that with secondary dry film, and electroplating its upper surface to form copper-plated and tin-plated layers, removing lower layer of thin copper,and electrolytic electroplating the holes to form outwards-projected contacts, etching top layer of thin copper, stripping plated tin, laser drilling and covering with sputtered masks to form sputtered salient points used for welding chip, so that it can make external contacts much fine, and can reduce package area.

Description

Winding automatic-welding spherical-array type integrated circuit packing method

The present invention relates to a kind of integrated circuit packaging method, relate in particular to a kind of winding automatic-welding spherical-array type integrated circuit packing method.

With regard to the method for making of TAB-BGA type integrated circuit dimensional packaged circuit board now, substantially shown in Fig. 3 A～I, it is the typical processing procedure of 3M company, at first be the sputter copper 91 that forms minimal thickness in the Ju of Fig. 3 A Ya Pile-of-rocks amine film 90 (POLYIMIDE) base material top by sputtering way (PVD or CVD), to form a Ju Ya Pile-of-rocks amine film that contains thin copper layer, then shown in Fig. 3 B, the electro-coppering 92 that the surface covers a minimal thickness with plating mode, afterwards, shown in Fig. 3 C, locate the pressing dry film and pass through exposure/step of developing at end face and bottom surface, be positioned at the block dry film 93 that end face and bottom surface are most tool breach and form, secondly, then shown in Fig. 3 D, carry out the step of electro-coppering in tip position, to form the thicker electro-coppering 94 between each dry film 93, secondly, then shown in Fig. 3 E, Ju Ya Pile-of-rocks amine film 90 is carried out etched step, and form for the follow-up tapered hole 97 of implanting the tin ball, then, shown in Fig. 3 F, carry out the step of metallide nickel and metallide chromium, order is positioned at the thicker electro-coppering 94 of upper surface and tapered hole 97 places of bottom form metallide nickel/chromium layer 96, afterwards, remove the dry film 93 of top bottom and form pattern as Fig. 3 G, and through the step of etched copper, electro-coppering 92 and 91 etchings of sputter copper to the inner interlayer position of Fig. 3 G, and change kenel into as Fig. 3 H, at last, then be each tapered hole 97 position of bottom to be implanted the step of tin ball, and form for external tin ball 98 in the region of interest shown in Fig. 3 I, as for the nickel/chromium layer 96 one place of the evagination that is positioned at surperficial appropriate location for for adhesion chip 40, and simultaneously with chip 40 each pin by wire bonder (BONDER) with metal wire 41 cross-over connections to the relevant position place.

But the method for making of above-mentioned existing TAB-BGA integrated circuit dimensional packaged circuit board has following shortcoming:

(1) in Ju Ya Pile-of-rocks amine film 90 tops is the sputter copper 91 that forms minimal thickness in the employed sputter of manufacture of semiconductor (SPUTTERING) mode, though the Copper Foil that forms by sputtering way can reach evenly and thin thickness, so not only comparatively expensive with this sputter process, and carry out under the large-area sputter operation on Ju Ya Pile-of-rocks amine film surface, cost more belongs to high, does not meet the requirement of economy.

(2) its external contact is for using " planting the tin ball " mode, because tin ball size has certain limitation, and the corresponding tapered hole of implanting for the tin ball also must design suitable allowance error, so cause the size of external contact and spacing distance significantly to reduce, cause the shortcoming that external contact can't granular, and the mode of implanting the tin ball falls into each tapered hole for making the tin ball roll on circuit board, and then form with the melts combine of tapered hole inside by high temperature, this measure, the phenomenon that the setting accuracy deficiency is more arranged, that is can't guarantee that each tin ball can all aim at, so be difficult to reach the more demand of high precision and littler contact.

(3) because it is formation chromium metal for the contact that connects chip, carry out wire jumper and be connected so must use chromium line welding manner (AuWire Bonding) with between the chip contact, this kind takies board area by the packaged type that wire jumper connects chip, cause the size of whole dimensional packaged circuit board bigger, can't meet highdensity requirement.

Main purpose of the present invention is to provide a kind of winding automatic-welding spherical-array type integrated circuit packing method, it only uses the Ju Ya Pile-of-rocks amine film that has preset thin copper as the processing procedure base material, and need not carry out the operation of large tracts of land sputter, not only can reduce the base material cost, and in processing procedure, more can exempt the problem of planting the setting accuracy deficiency that the tin ball derived, also can reach the effect of the granular of trickleer contact and thin space.

Another object of the present invention is to provide a kind of winding automatic-welding spherical-array type integrated circuit packing method, it can form breach, the step of gathering inferior Pile-of-rocks amine film etching laser drill formation contact hole is mobilized in front and back the etching of bottom thin copper, also can be before Ju Ya Pile-of-rocks amine film base material not being carried out the etched step of hole, carry out the step of top layer electro-coppering/tin earlier, again bottom thin copper is carried out the breach etching and poly-inferior Pile-of-rocks amine film base material is carried out laser drill.

The object of the present invention is achieved like this: a kind of winding automatic-welding spherical-array type integrated circuit packing method, be characterized in, and comprising:

One to take the Ju Ya Pile-of-rocks amine film that contains two-sided thin copper be the step of base material,

One passes through this first dry film as mask, and the thin copper of lower floor that carries out Ju Ya Pile-of-rocks amine film carries out etching formation and has the step of a plurality of breach,

The thin copper of one this lower floor of utilization carries out laser drill as mask to the Ju Ya Pile-of-rocks amine membranous part position of base material, forms the etching step of hole figure,

One uses second dry film as mask, to the step of enforcement electro-coppering of base material upper surface place and electrotinning,

One utilization the 3rd dry film, the step of the thin copper of lower floor is removed in etching,

One by the 4th dry film protection layers on substrates, and forms the step of filling up each hole and omiting the metallide contact of evagination at each hole enforcement metallide that gathers inferior Pile-of-rocks amine film,

One utilization the 5th dry film protection base material bottom surface, only etching is thin copper and the electrotinning that exposes between each electro-coppering, and makes each adjacent electro-coppering step spaced apart from each other,

A pair of base material central authorities and need to form the position that connects and carry out laser drill, forming the step of the chip installing hole that is positioned at base material central authorities and peripheral laser perforation respectively,

One mask film covering, and make the electro-coppering near-end edge of base material central authorities be the step that exposes,

One jet-plating metallization, and make the step that forms the sputter salient point corresponding to the exsertion part of this electro-coppering, and

One removes mask and is corresponding to the step of sputter salient point position in conjunction with chip.

In above-mentioned winding automatic-welding spherical-array type integrated circuit packing method:

Described electro-coppering can have a higher thickness;

Described each sputter salient point can combine with chip by the single-point welding manner;

Described metallide contact can nickel or copper product constitutor, wherein,

Described sputter salient point is made of aluminum;

Described mask is a hard mask.

Technical solution of the present invention also is a kind of winding automatic-welding spherical-array type integrated circuit packing method is provided, and is characterized in, comprising:

One takes the Ju Ya Pile-of-rocks amine film that the contains two-sided thin copper step as base material,

One uses first dry film as mask, to the step of enforcement electro-coppering of base material upper surface place and electrotinning,

One passes through this second dry film as mask, and the thin copper of lower floor that carries out Ju Ya Pile-of-rocks amine film carries out etching formation and has the step of a plurality of breach,

One removes mask and corresponding to the step of sputter salient point position in conjunction with chip.

In above-mentioned winding automatic-welding spherical-array type integrated circuit packing method, wherein,

Described electro-coppering can have a higher thickness.

But described sputter salient point single-point welding manner combines with chip;

Described metallide contact can be made of nickel or copper product;

Described sputter salient point can be made of aluminum.

Described mask is a hard mask.

The present invention compared with the prior art advantage and good effect is very obvious.By above technical scheme as can be known, in FEOL of the present invention, since be the poly-inferior Pile-of-rocks amine film of directly taking pressing in advance or being bonded with two-sided thin copper as base material, it is cheap that the cost of base material obviously carries out the step of the thin copper of sputter than the aforementioned conventional mode, and the advantage that reduces cost is arranged; Simultaneously, by 10 etchings of Ju Ya Pile-of-rocks amine film being formed hole 12 and forming in the step of metallide contact 17, promptly make each contact be able to automatic aligning (SELF-ALIGN) in each hole 12, and unlikely generation skew or undue error, so can provide outside the pinpoint advantage, and can make each contact 17) between spacing can be controlled in quite narrow degree (20 μ), more can meet the characteristic of trickle contact; In addition, confession joint chip 40 places for Fig. 1 X and Fig. 2 X, form a kind of can directly giving in conjunction with the person, need not to link, also make TAB-BGA dimensional packaged circuit board overall dimensions dwindle thus by jumper connection gold thread mode by single-point welding (SINGLE POINT BOND) mode; Moreover under the kenel of the Ju Ya Pile-of-rocks amine film that uses two-sided thin copper, the mask that the thin copper of this lower floor can be used as laser drill uses, and more makes laser drill more become accurate.

Concrete structure of the present invention is provided by following embodiment and accompanying drawing thereof.

Fig. 1 is the cross-sectional schematic of welding an embodiment method for making of configuration integrated circuit packaging method according to the winding that the present invention proposes automatically.

Fig. 2 is the cross-sectional schematic according to Fig. 2 embodiment method for making of the present invention.

Fig. 3 is the cross-sectional schematic of prior art TAB-BGA processing procedure.

Describe step and working condition thereof in detail below in conjunction with accompanying drawing, therefrom can also further find out other purpose, feature and advantage of the present invention according to concrete grammar proposed by the invention.

The present invention has two kinds of different embodiment; and the only front and back of each processing procedure adjustment therebetween; below promptly with regard to various embodiments of the present invention it is described successively; at first shown in A～X figure of Fig. 1; in Figure 1A; the present invention is for directly using pressing or being bonded with two-sided thin copper 11; 111 Ju Ya Pile-of-rocks amine film 10 is as base material of the present invention; and need not must spatter copper-plated step to adding on the poly-inferior Pile-of-rocks amine film base material earlier as the conventional process; exempt thin copper metal needs according to this and carry out process complexity that sputter derives and expensive problem; and in Figure 1B; for first dry film 13 is passed through with the bottom in Ju Ya Pile-of-rocks amine film 10 tops; pressing/exposure/step of developing of 131; and only form most shrinkage pools at first lower floor's dry film, 131 places; then shown in Fig. 1 C; the bottom thin copper 111 that is positioned at aforementioned each shrinkage pool place is removed in corresponding etching; through removing on first; lower floor's dry film 13; 131 backs (as Fig. 1 D); promptly form a plurality of breach 112 at bottom thin copper 111 places; then; shown in Fig. 1 E; rely on the aforementioned bottom thin copper 111 that is positioned at each breach 112 periphery to become laser backstop mask; Ju Ya Pile-of-rocks amine film 10 is carried out laser-induced thermal etching; to form a plurality of holes that do not run through 12 (these holes are for forming the contact that extends in the follow-up metallide operation downwards); be then shown in Fig. 1 F; upper and lower surface is carried out second dry film 16; pressing/exposure/step of developing of 161; second lower floor's dry film 161 is for being the state that covers fully; the second upper strata dry film 16 is for being the pattern of tool breach; so; just can be shown in Fig. 1 G the upper strata gap portions be electroplated and form a thicker electro-coppering 14 and the double-deck electrodeposited coating of an electrotinning 15; through removing on second; lower floor's dry film 16; 161 backs (shown in Fig. 1 H); then carry out on the 3rd; lower floor's dry film 19; pressing/exposure/step of developing of 191; and only form the kenel (shown in Fig. 1 I) of breach in the bottom; secondly; then be shown in Fig. 1 J; removal is attached to the bottom thin copper 111 of these Ju Ya Pile-of-rocks amine film 10 belows; remove the 3rd dry film 19 among Fig. 1 J; 191 backs (shown in figure K); carry out shown in Fig. 1 L only at upper surface pressing dry film 51; and end face is formed after the due care; carry out carrying out the step (nickel plating or copper facing) of metallide again as each hole 12 position of Fig. 1 M to Ju Ya Pile-of-rocks amine film 10; and fill up at each hole place and the outer end is the metallide contact 17 (forming the external contact of this dimensional packaged circuit board) of evagination pattern; then; for removal be incumbent on the surface Fig. 4 dry film 51; promptly shown in Fig. 1 N; afterwards; for as Fig. 1 O; shown in the P; successively the bottom surface is covered a diaphragm 18 and carry out the 5th dry film 52 pressing/exposure/step of developing; so at Fig. 1 Q; in the step of R; remove the electrotinning 15 at thin copper 11 of top layer and electrodeposited coating upper surface place successively; and carry out aforementioned the 5th dry film 52 of removal shown in Fig. 1 S and the step of diaphragm 18; at last; then be shown in Fig. 1 T; step to middle position and other positions enforcement laser drill; be positioned at the chip installing hole 22 and the laser perforation 21 of central authorities and peripheral position with formation; and form one as the upper limb that Fig. 1 upper surface that U is shown in covers a hard mask 30 and will be positioned at the thick electro-coppering 14 of middle position and expose portion 31; and in the step of Fig. 1 V; it is carried out sputter (can be aluminum); form sputter salient point 32 (for the usefulness of follow-up single-point welding chip) and expose portion 31 at this; and after removing this hard mask 30; the bottom surface that promptly forms as Fig. 1 W is formation array metallide contact 17; shown in Fig. 1 X, then can supply the single-point welding manner directly in conjunction with chip 40 by the sputter salient point 32 above central authorities.

And another embodiment of the present invention is shown in A～X figure of Fig. 2, its back-end process is identical with Fig. 1, and difference place therebetween only forms thick electro-coppering 14 and electrotinning 15 (shown in Fig. 2 C) at Fig. 2 for earlier thin copper place, the upper strata of Ju Ya Pile-of-rocks amine film 10 being electroplated, and again bottom thin copper 111 is carried out breach 112 etchings and laser drill forms each shrinkage pool 12 (as Fig. 2 G at subsequent step, H), thereafter processing procedure and Fig. 1 I-X of Fig. 2 I-X are identical, that is the embodiment of this Fig. 2 is only for the step that will form upper strata electrodeposited coating and laser drill formation shrinkage pool mobilizes in front and back, and the needs of visual reality give the selectivity use.

The present invention uses pressing the Ju Ya Pile-of-rocks amine film of two-sided thin copper layer to be arranged as the processing procedure base material, define and etching formation breach through dry film by bottom thin copper, for mask as laser beam backstop, when making the laser drill step, be able to make poly-inferior Pile-of-rocks amine film form the contact hole corresponding to bottom thin copper indentation, there, it is after the step of multiple tracks dry film, form electro-coppering/electrotinning successively on the top layer, bottom thin copper is removed in etching, contact hole metallide forms the evagination contact, etched surfaces approaches copper, the stripping electrotinning, electricity is penetrated boring, cover the sputter mask and form the sputter salient point that supplies welding chip, rely in the aforementioned processing procedure for forming hole prior to gathering on the inferior Pile-of-rocks amine film base material in advance, each hole being carried out metallide at subsequent step then forms under the kenel of evagination contact, so, because the Ju Ya Pile-of-rocks amine film of directly taking pressing or being bonded with thin copper is as base material, need not by expensive sputtering process, and can make external contact reach good location more on the processing procedure and obtain the effect of trickleer contact, more only need the single-point welding manner to reach and make the dimensional packaged circuit board overall dimensions less in conjunction with chip.

Claims

1. winding automatic-welding spherical-array type integrated circuit packing method is characterized in that comprising:

2. winding automatic-welding spherical-array type integrated circuit packing method according to claim 1 is characterized in that: described electro-coppering has a higher thickness.

3. winding automatic-welding spherical-array type integrated circuit packing method according to claim 1 is characterized in that: described each sputter salient point is for to combine with chip with the single-point welding manner.

4. winding automatic-welding spherical-array type integrated circuit packing method according to claim 1 is characterized in that: described metallide contact is for constituting with nickel or copper product.

5. winding automatic-welding spherical-array type integrated circuit packing method according to claim 1 is characterized in that: described sputter salient point is made of aluminum.

6. winding automatic-welding spherical-array type integrated circuit packing method according to claim 1 is characterized in that: described mask is a hard mask.

7. winding automatic-welding spherical-array type integrated circuit packing method is characterized in that comprising:

8. winding automatic-welding spherical-array type integrated circuit packing method according to claim 7 is characterized in that: described electro-coppering has a higher thickness.

9. winding automatic-welding spherical-array type integrated circuit packing method according to claim 7 is characterized in that: described sputter salient point combines with chip with the single-point welding manner.

10. winding automatic-welding spherical-array type integrated circuit packing method according to claim 7 is characterized in that: described metallide contact is made of nickel or copper product.

11. winding automatic-welding spherical-array type integrated circuit packing method according to claim 7 is characterized in that: described sputter salient point is made of aluminum.

12. winding automatic-welding spherical-array type integrated circuit packing method according to claim 7 is characterized in that: described mask is a hard mask.